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At least 559 records · Page 31

Tunable White-Light Emission in Single-Cation-Templated Three-Layered 2D Perovskites (CH 3 CH 2 NH 3 ) 4 Pb 3 Br 10– x Cl x

Two-dimensional (2D) hybrid halide perovskites come as a family (B) 2 (A) n-1 PbnX 3n+1 (B and A= cations; X= halide). These perovskites are promising semiconductors for solar cells and optoelectronic applications. Among the fascinating properties of these materials is white-light emission, which has been mostly observed in single-layered 2D lead bromide or chloride systems (n = 1), where the broad emission comes from the transient photoexcited states generated by self-trapped excitons (STEs) from structural distortion. Here we report a multilayered 2D perovskite (n = 3) exhibiting a tunable white-light emission. Ethylammonium (EA+) can stabilize the 2D perovskite structure in EA 4 Pb 3 Br 10–x Cl x (x = 0, 2, 4, 6, 8, 9.5, and 10) with EA + being both the A and B cations in this system. Because of the larger size of EA, these materials show a high distortion level in their inorganic structures, with EA4Pb3Cl10 having a much larger distortion than that of EA 4 Pb 3 Br 10 , which results in broadband white-light emission of EA 4 Pb 3 Cl 10 in contrast to narrow blue emission of EA4Pb3Br10. The average lifetime of the series decreases gradually from the Cl end to the Br end, indicating that the larger distortion also prolongs the lifetime (more STE states). The band gap of EA 4 Pb 3 Br 10–x Cl x ranges from 3.45 eV (x = 10) to 2.75 eV (x = 0), following Vegard’s law. First-principles density functional theory calculations (DFT) show that both EA 4 Pb 3 Cl 10 and EA 4 Pb 3 Br 10 are direct band gap semiconductors. The color rendering index (CRI) of the series improves from 66 (EA 4 Pb 3 Cl 10 ) to 83 (EA 4 Pb 3 Br 0.5 Cl 9.5 ), displaying high tunability and versatility of the title compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characteristics of Water Vapor Turbulence Profiles in Convective Boundary Layers During the Wet and Dry Seasons Over Darwin

This study explores water vapor turbulence in the convective boundary layer (CBL) using the Raman lidar observations the Atmospheric Radiation Measurement (ARM) site located at Darwin, Australia. These observations have temporal and vertical resolutions of 10 s and 37.5 m, respectively. An autocovariance technique has been used to separate out the random instrument error from the atmospheric variability during time periods when the CBL is cloud-free, quasi-stationary and well mixed. We identified 62 cases, comprising of 13 monsoon and 49 non-monsoon events, over the 5-year data record period. The seasonal variations of the vertical profiles of integral scale, variance, coefficient of the structure function, and skewness were analyzed and compared with similar observations from the Raman lidar at the ARM Southern Great Plains (SGP) site. The monsoon shows larger median variance profiles than the non-monsoon. The median profile of the variance from the non-monsoon and the SGP site are found to have similar magnitudes between 0.3-0.75 zi, while the median variance profile from the monsoon and the SGP are approximately the same between 0.9-1.1 zi. The variance and coefficient of the structure function are linearly related by height, with larger slopes in the monsoon season suggesting larger dissipation rates in that season relative to the non-monsoon. The median value in the skewness is mostly positive below 0.6 zi and above this it becomes negative until it crosses zero just below 1.0 zi. Its smallest value is seen at around 0.95 zi and it remains positive above 1.0 zi.

Osman, Mohammed K.↗

Nucleation of dislocations and their dynamics in layered oxide cathode materials during battery charging

Lithium-rich layered oxides (LRLO) are among the leading candidates for the next-generation cathode material for energy storage, delivering 50% excess capacity over commercially used compounds. Despite excellent prospects, voltage fade has prevented effective use of the excess capacity, and a major challenge has been a lack of understanding of the mechanisms underpinning the voltage fade. Here, using operando three-dimensional Bragg coherent diffractive imaging, we directly observe the nucleation of a mobile dislocation network in LRLO nanoparticles. The dislocations form more readily in LRLO as compared with a classical layered oxide, suggesting a link between the defects and voltage fade. We show microscopically how the formation of partial dislocations contributes to the voltage fade. The insights allow us to design and demonstrate an effective method to recover the original high-voltage functionality. Furthermore, our findings reveal that the voltage fade in LRLO is reversible and call for new paradigms for improved design of oxygen-redox active materials.

25 ENERGY STORAGE↗

Inter-layer coupling induced valence band edge shift in mono- to few-layer MoS 2

In this study, recent progress in the synthesis of monolayer MoS 2 , a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here,we report a study of highly crystalline islands of MoS 2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS 2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS 2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS 2 .

36 MATERIALS SCIENCE↗

Electrochemical properties and structural evolution of O3-type layered sodium mixed transition metal oxides with trivalent nickel

The electrochemical properties of NaNi 0.5 Co 0.5 O 2 and NaNi 0.5 Fe 0.5 O 2 and their structural transitions as a function of Na extraction associated with redox reactions are investigated. Synthesized in the O3-type layered structure, both materials show reasonable electrochemical activities at room temperature, delivering approximately 0.5 Na per formula unit at C/10 discharge. More Na can be reversibly cycled in NaNi 0.5 Co 0.5 O 2 at elevated temperature and/or in an extended voltage window, while NaNi 0.5 Fe 0.5 O 2 shows significant capacity fading at a high voltage cutoff which is likely due to Fe 4+ migration. In situ X-ray diffraction shows that the structural changes in the two materials upon desodiation are very different. NaNi 0.5 Co 0.5 O 2 goes through many different two-phase reactions including three different O3-type and three different P3-type structures during cycling, producing a voltage profile with multiple plateau-like features. In contrast, NaNi 0.5 Fe 0.5 O 2 has a smooth voltage profile and shows the typical O3–P3 phase transition without lattice distortion seen in other materials. Finally, this different structural evolution upon desodiation and re-sodiation can be explained by the electronic structure of the mixed transition metals and how it perturbs the ordering between Na ions differently.

36 MATERIALS SCIENCE↗

Room-temperature fabrication of a delafossite CuCrO 2 hole transport layer for perovskite solar cells

Delafossite oxides are promising hole transport layer (HTL) candidates for perovskite solar cells, due to their wide band gap, favorable energy band alignment relative to the perovskite absorber and simplicity of processing. In this paper, we investigate the properties of CuCrO2 (CCO) delafossite films using an integration of experimental and computational techniques. Phase-pure CCO films are deposited at room temperature by spin-casting suspensions of hydrothermally-synthesized nanoparticles, for use in a glass/ITO/CCO/CH3NH3PbI3/C60/BCP/Ag device structure. Although density functional theory (DFT) calculations predict an elevated hole effective mass along certain crystallographic directions, the nearly isotropic shape and small size of the CCO nanoparticles preserves transport properties within the films by randomizing particle orientation, preventing these unfavorable directions from dominating the film conductivity. Experimental measurements confirm that the CCO films display appropriate optical and electrical properties for use as an HTL, in good agreement with the DFT calculations. Solar cells made using these films exhibit stabilized power conversion efficiencies exceeding 14%, with only minor hysteresis in the current–voltage characteristics.

Dunlap-Shohl, Wiley A.↗

Layer-by-layer assembly of a polymer of intrinsic microporosity: targeting the CO 2 /N 2 separation problem

A polymer of intrinsic microporosity, 1, has been incorporated into a series of polyelectrolyte multilayers via the layer-by-layer deposition method. One of these assemblies [a 6 nm multilayer derived from 1 plus poly(diallyldimethylammonium chloride)] showed exceptional permeation properties with respect to CO 2 and N 2 . Specifically, this film exhibited a CO 2 permeance of 130 GPU and a CO 2 /N 2 selectivity of 33.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Failure modes of protection layers produced by atomic layer deposition of amorphous TiO 2 on GaAs anodes

Amorphous titanium dioxide (a-TiO 2 ) films formed by atomic layer deposition can serve as protective coatings for semiconducting photoanodes in water-splitting cells using strongly alkaline aqueous electrolytes. Herein, we experimentally examine the mechanisms of failure for p + -GaAs anodes coated with a-TiO 2 films (GaAs/a-TiO 2 ). Galvanic displacement of exposed GaAs by Au allowed imaging of pinholes in the a-TiO 2 coatings, and enabled collection of quantitative and statistical data associated with pinhole defects. A combination of imaging, electrochemical measurements, and quantitative analyses of corrosion products indicated that extrinsic pinholes were present in the a-TiO 2 films before electrochemical operation. During electrochemical operation these pinholes led to pitting corrosion of the underlying GaAs substrate. The dominant source of pinholes was the presence of atmospheric particulate matter on the GaAs surface during deposition of the a-TiO 2 layer. The pinhole density decreased substantially when the thickness of the a-TiO 2 coating increased beyond 45 nm, and approached zero when the thickness of the film exceeded 112 nm. The density of pinholes in films thinner than 45 nm decreased when the a-TiO 2 coating was deposited in an environmentally controlled cleanroom. Pinhole-free GaAs/a-TiO 2 devices were also tested via chronoamperometry to quantify the rate of pinhole formation during electrochemistry. The time-to-failure increased with thickness, suggesting that the failure mechanism may involve diffusion or migration through the film. However, other mechanisms may also contribute to the degradation of thicker films (>112 nm). Nevertheless, as previously hypothesized, extrinsic pinhole defects formed during deposition and testing control the short-term protective performance of the a-TiO 2 film for GaAs anodes evolving O 2 from water.

25 ENERGY STORAGE↗