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At least 559 records · Page 31

Nanoscale depth and lithiation dependence of V 2 O 5 band structure by cathodoluminescence spectroscopy

Vanadium pentoxide (V 2 O 5 ) is a very well-known cathode material that has attracted considerable interest for its potential use in solid-state lithium-ion batteries. We pioneer the use of depth-resolved cathodoluminescence spectroscopy (DRCLS) to monitor the changes in the electronic structure of lithiated V 2 O 5 from the free surface to the thin film bulk several hundred nm below as a function of lithiation. DRCLS measurements of V 2 O 5 interband transitions are in excellent agreement with density functional theory (DFT) calculations. The direct measure of V 2 O 5 's electronic band structure as a function of lithiation level provided by DRCLS can help inform solid-state battery designs to further withstand degradation and increase efficiency. In particular, these unique electrode measurements may reveal physical mechanisms of lithiation that change V 2 O 5 irreversibly, as well as methods to mitigate them in solid-state batteries.

25 ENERGY STORAGE↗

TOF-SIMS analysis of decoherence sources in superconducting qubits

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Model comparisons for two-temperature plasma equations of state

When a plasma is generated in the laboratory, energy is often deposited preferentially into either the electrons or the ions, giving rise to a quasiequilibrium state in which the two species, electrons and ions, are well described by two effective temperatures, T e and T i . Accurate hydrodynamic modeling of such a two-temperature plasma requires an equation of state that captures the relevant many-body physics without assuming a strict local thermodynamic equilibrium. Several models have been proposed within the literature, which extend conventional statistical approaches, each employing a different combination of assumptions for modifying the equilibrium equations. Here, in this work, we compare the predictions for several models, presenting derivations of the internal energy and pressure for each microscopic model within a unified framework so that the assumptions of each model may be more easily compared to one another. We find that for sufficiently weak coupling, all models agree with one another. However, as the coupling strength is increased, the disagreement between the models becomes more pronounced. Moreover, the relative sizes of the corrections predicted by each model depend on which species has the higher temperature, T e >T i vs T e < T i .

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Material mixing during fuzz formation in W and Mo

Helium-induced fuzz formation in tungsten (W) and molybdenum (Mo) is investigated for a range of sample exposure temperatures from 838 K–1075 K (He fluence = 3.4 × 10 25 m -2 and ion energy <39 eV). Thin films of Mo deposited on W substrates show mixing of the film and substrate materials in the fuzz after He plasma exposure, including at 838 K (i.e. below the typical temperature range at which fuzz forms in pure W). Finally, the amount of material mixing increases with exposure temperature due to the increase in bubble size, and leads to significant accumulation of the substrate material at the fuzz surface at the highest temperature investigated, further supporting fuzz growth from the fiber tip outwards by material transport up the fibers.

36 MATERIALS SCIENCE↗

Investigating the Catalytic Requirements of Perovskite Fuel Electrodes Using Ultra-Low Metal Loadings

Solid Oxide Fuel Cells (SOFC) with La 0.3 Sr 0.7 TiO 3 (LST)–yttria-stabilized ZrO 2 (YSZ) anodes were prepared by impregnation of LST into porous YSZ scaffolds and then modified by Atomic Layer Deposition (ALD) of Ni, Pt, Pd, Fe, Co. and CeO 2 . Weight loadings as low as 0.01% of Pt, Ni, and Pd were sufficient to decrease anode impedances by orders of magnitude for operation in humidified H 2 at 973 K. The effects of CeO 2 , Co, and Fe were less but still significant. Sintering at higher temperatures was important. Furthermore, possible ways of stabilizing the metal particles and implications for developing ceramic anodes are discussed.

25 ENERGY STORAGE↗

Convection electric fields and polar thermospheric winds.

Use of the qualitative ideas of convection electric fields over the earth's polar regions to demonstrate the importance of ion drag in establishing a thermospheric wind system. Recent measurements indicate that uniform electric fields of 10 to 40 mV/m are a regular feature of the polar-cap ionosphere. Calculations of the neutral thermospheric wind, using these measured fields in a simple ionospheric model, have been made. The time scale for motion of the neutral gas ranges from less than 1 hour at F-region heights to about 2 hours in the dynamo region of the ionosphere. It has been found that the viscosity of the atmosphere is important in determining the winds in the dynamo region. Results are given that show ion-temperature enhancements of hundreds of degrees that are due to ion-neutral frictional effects. In addition, the total deposition rate of convection energy in the polar thermosphere is shown to be of the same order of magnitude as that due to absorption of solar EUV radiation. The implications of these results for the dynamics and energetics of the thermosphere are discussed.

Fedder, J. A.↗

The role of metastable species in the thermosphere

Metastable excited states of various ions and neutrals in the thermosphere provide reservoirs for the temporary storage of a large portion of solar EUV energy, and permit the conversion of this photon energy by kinetic or vibrational heating, ion formation metastable species formation and nonlocal energy deposition. The present paper reviews current understandings of the chemistry of O(1D), O(1S), O(+)(2D), O(+)(2P), N(2D), N(2P), N(+)(1S), N(+)(1D), NO(+)(a), O2(+)(a), N2(A) and the vibrationally excited states of O2, N2, O2(+) and N2(+). The role of these species in the overall thermospheric energy budget and ionization balance is also quantified. It is noted that of the species considered, O(1D), O(1S), O(+)(1S), O(+)(2D), N(2D), N2(A) and the vibrationally excited states of the oxygen and nitrogen molecules are most significant, with a major fraction of the kinetic heating of the thermosphere taking place through O(1D).

Torr, M. R.↗

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗

Thermal- and plasma-induced molecular redistribution on the icy satellites

The molecular transport of condensed gas species across the surfaces of the icy satellites of Jupiter and Saturn is examined with the view of describing, in part, certain gross visual features associated with these bodies. Molecular redistribution induced by thermal sublimation and magnetospheric plasma-ion impact on satellites with negligible atmospheres is calculated by assuming that the molecules follow ballistic trajectories and by statistically selecting initial molecular velocities and points of origin. Erosion/deposition profiles so calculated are compared for a variety of satellite sizes and environments in order to understand the relative importance of sublimation and cold corotating plasma-ion- and fast plasma-ion-induced transport. The erosion/deposition profiles are used to discuss the appearance of a polar frost on Ganymede. A balance of magnetospheric-ion implantation and ion-induced molecular redistribution is used to discuss the observation of embedded SO2 and the darkening of the trailing side on Europa. Ion-induced molecular transport may also limit the deposition of SO2 frost in the polar regions of Io and may be a source of heavy particles in the Jovian and Saturnian magnetospheres.

Sieveka, E. M.↗

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗

Ion plated gold films: Properties, tribological behavior and performance

The glow discharge energizing favorably modifies and controls the coating/substrate adherence and the nucleation and growth sequence of ion plated gold films. As a result the adherence, coherence, internal stresses, and morphology of the films are significantly improved. Gold ion plated films because of their graded coating/substrate interface and fine uniform densely packed microstructure not only improve the tribological properties but also induce a surface strengthening effect which improves the mechanical properties such as yield, tensile, and fatigue strength. Consequently significant improvements in the tribological performance of ion plated gold films as compared to vapor deposited gold films are shown in terms of decreased friction/wear and prolonged endurance life.

Spalvins, Talivaldis↗

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗

SIMS analysis of extended impact features on LDEF experiment

Discussed here are the first Secondary Ion Mass Spectroscopy (SIMS) analysis of projectile material deposited in extended impact features on Ge wafers from the trailing edge. Although most capture cells lost their plastic film covers, they contain extended impact features that apparently were produced by high velocity impacts when the plastic foils were still intact. Detailed optical scanning of all bare capture cells from the trailing edge revealed more than 100 impacts. Fifty-eight were selected by scanning electron microscope (SEM) inspection as prime candidates for SIMS analysis. Preliminary SIMS measurements were made on 15 impacts. More than half showed substantial enhancements of Mg, Al, Si, Ca, and Fe in the impact region, indicating micrometeorites as the projectiles.

Amari, S.↗

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. A.↗

A New All Solid State Approach to Gaseous Pollutant Detection

Recent efforts in our laboratories have concentrated on the development of an all solid state gas sensor, by combining solid electrolyte (ion exchange membrane) technology with advanced thin film deposition processes. With the proper bias magnitude and polarity these miniature electro-chemical,cells show remarkable current responses for many common pollution gases. Current activity is now focused on complementing a multiple array (matrix) of these solid state sensors, with a digital electronic scanner device possessing "scan-compare-identify-alarm: capability. This innovative approach to multi-component pollutant gas analysis may indeed be the advanced prototype for the "third generation" class of pollution analysis instrumentation so urgently needed in the decade ahead.

Brown, V.↗

New Modeling Approaches to Investigate Cell Signaling in Radiation Response

Ionizing radiation damages individual cells and tissues leading to harmful biological effects. Among many radiation-induced lesions, DNA double-strand breaks (DSB) are considered the key precursors of most early and late effects [1] leading to direct mutation or aberrant signal transduction processes. In response to damage, a flow of information is communicated to cells not directly hit by the radiation through signal transduction pathways [2]. Non-targeted effects (NTE), which includes bystander effects and genomic instability in the progeny of irradiated cells and tissues, may be particularly important for space radiation risk assessment [1], because astronauts are exposed to a low fluence of heavy ions and only a small fraction of cells are traversed by an ion. NTE may also have important consequences clinical radiotherapy [3]. In the recent years, new simulation tools and modeling approaches have become available to study the tissue response to radiation. The simulation of signal transduction pathways require many elements such as detailed track structure calculations, a tissue or cell culture model, knowledge of biochemical pathways and Brownian Dynamics (BD) propagators of the signaling molecules in their micro-environment. Recently, the Monte-Carlo simulation code of radiation track structure RITRACKS was used for micro and nano-dosimetry calculations [4]. RITRACKS will be used to calculate the fraction of cells traversed by an ion and delta-rays and the energy deposited in cells in a tissue model. RITRACKS also simulates the formation of chemical species by the radiolysis of water [5], notably the .OH radical. This molecule is implicated in DNA damage and in the activation of the transforming growth factor beta (TGF), a signaling molecule involved in NTE. BD algorithms for a particle near a membrane comprising receptors were also developed and will be used to simulate trajectories of signaling molecules in the micro-environment and characterize autocrine and paracrine cell communication and signal transduction.

Plante, Ianik↗

NASA Tech Briefs, May 2003

Topics covered include: Using Diffusion Bonding in Making Piezoelectric Actuators; Wireless Temperature-Monitoring System; Analog Binaural Circuits for Detecting and Locating Leaks; Mirrors Containing Biomimetic Shape-Control Actuators; Surface-Micromachined Planar Arrays of Thermopiles; Cascade Back-Propagation Learning in Neural Networks; Perovskite Superlattices as Tunable Microwave Devices; Rollable Thin-Shell Nanolaminate Mirrors; Flight Tests of a Ministick Controller in an F/A-18 Airplane; Piezoelectrically Actuated Shutter for High Vacuum; Bio-Inspired Engineering of Exploration Systems; Microscope Cells Containing Multiple Micromachined Wells; Electrophoretic Deposition for Fabricating Microbatteries; Integrated Arrays of Ion-Sensitive Electrodes; Model of Fluidized Bed Containing Reacting Solids and Gases; Membrane Mirrors With Bimorph Shape Actuators; Using Fractional Clock-Period Delays in Telemetry Arraying; Developing Generic Software for Spacecraft Avionics; Numerical Study of Pyrolysis of Biomass in Fluidized Beds; and Assessment of Models of Chemically Reacting Granular Flows.

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