Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “integrated circuits”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31

Enhanced Low Dose Rate Effects in Bipolar Circuits: A New Hardness Assurance Problem for NASA

Many bipolar integrated circuits are much more susceptible to ionizing radiation at low dose rates than they are at high dose rates typically used for radiation parts testing. Since the low dose rate is equivalent to that seen in space, the standard lab test no longer can be considered conservative and has caused the Air Force to issue an alert. Although a reliable radiation hardness assurance test has not yet been designed, possible mechanisms for low dose rate enhancement and hardness assurance tests are discussed.

bipolar integrated circuits↗

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Beall, J. R.↗

HYMOSS signal processing for pushbroom spectral imaging

The objective of the Pushbroom Spectral Imaging Program was to develop on-focal plane electronics which compensate for detector array non-uniformities. The approach taken was to implement a simple two point calibration algorithm on focal plane which allows for offset and linear gain correction. The key on focal plane features which made this technique feasible was the use of a high quality transimpedance amplifier (TIA) and an analog-to-digital converter for each detector channel. Gain compensation is accomplished by varying the feedback capacitance of the integrate and dump TIA. Offset correction is performed by storing offsets in a special on focal plane offset register and digitally subtracting the offsets from the readout data during the multiplexing operation. A custom integrated circuit was designed, fabricated, and tested on this program which proved that nonuniformity compensated, analog-to-digital converting circuits may be used to read out infrared detectors. Irvine Sensors Corporation (ISC) successfully demonstrated the following innovative on-focal-plane functions that allow for correction of detector non-uniformities. Most of the circuit functions demonstrated on this program are finding their way onto future IC's because of their impact on reduced downstream processing, increased focal plane performance, simplified focal plane control, reduced number of dewar connections, as well as the noise immunity of a digital interface dewar. The potential commercial applications for this integrated circuit are primarily in imaging systems. These imaging systems may be used for: security monitoring systems, manufacturing process monitoring, robotics, and for spectral imaging when used in analytical instrumentation.

Ludwig, David E.↗

NASA Langley and AF RADC high-speed fiber optic transceiver program

NASA-Langley and the USAF Rome Air Development Center have been pursuing the development of military- and space-qualified fiber optic transceivers for a variety of ground-based, space-based, and general avionic applications. An initial development pursued a design called the multipurpose fiber optic transceiver (MFOX) and provided a family of fiber optic transceivers which operated up to 1 Gb/s. Currently, a second generation of high-speed fiber optic transceivers (HSFOX) is being developed. This design will utilize an all-integrated-circuits approach in order to develop a lighter-weight, smaller-size, and more efficient transceiver. The high-speed fiber optic transceiver will be military-and-space-operating in the 0.05-5 Gb/s data rate range. The initial results of tests, performance, and availability of commercial high-speed all-integrated-circuit chipsets for fiber-optic transceivers are discussed, as well as the performance of transceivers fabricated from these chipsets.

Hendricks, Herbert D.↗

System for RFID-Enabled Information Collection

A sensor and system provide for radio frequency identification (RFID)-enabled information collection. The sensor includes a ring-shaped element and an antenna. The ring-shaped element includes a conductive ring and an RFID integrated circuit. The antenna is spaced apart from the ring-shaped element and defines an electrically-conductive path commensurate in size and shape to at least a portion of the conductive ring. The system may include an interrogator for energizing the ring-shaped element and receiving a data transmission from the RFID integrated circuit that has been energized for further processing by a processor.

Fink, Patrick W.↗

High-Speed Binary-Output Image Sensor

Photodetector outputs digitized by circuitry on same integrated-circuit chip. Developmental special-purpose binary-output image sensor designed to capture up to 1,000 images per second, with resolution greater than 10 to the 6th power pixels per image. Lower-resolution but higher-frame-rate prototype of sensor contains 128 x 128 array of photodiodes on complementary metal oxide/semiconductor (CMOS) integrated-circuit chip. In application for which it is being developed, sensor used to examine helicopter oil to determine whether amount of metal and sand in oil sufficient to warrant replacement.

Fossum, Eric↗

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operating mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operational mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗

T/R Multi-Chip MMIC Modules for 150 GHz

Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of hazards for landing spacecraft, imaging systems for detecting hidden weapons, and hazard-avoidance systems for automobiles. Whereas prior landing radar systems have operated at frequencies around 35 GHz, the integrated circuits in this module operate in a frequency band centered at about 150 GHz. The higher frequency (and, hence, shorter wavelength), is expected to make it possible to obtain finer spatial resolution while also using smaller antennas and thereby reducing the sizes and masses of the affected systems.

Samoska, Lorene A.↗

Parallel-Processing Equalizers for Multi-Gbps Communications

Architectures have been proposed for the design of frequency-domain least-mean-square complex equalizers that would be integral parts of parallel- processing digital receivers of multi-gigahertz radio signals and other quadrature-phase-shift-keying (QPSK) or 16-quadrature-amplitude-modulation (16-QAM) of data signals at rates of multiple gigabits per second. Equalizers as used here denotes receiver subsystems that compensate for distortions in the phase and frequency responses of the broad-band radio-frequency channels typically used to convey such signals. The proposed architectures are suitable for realization in very-large-scale integrated (VLSI) circuitry and, in particular, complementary metal oxide semiconductor (CMOS) application- specific integrated circuits (ASICs) operating at frequencies lower than modulation symbol rates. A digital receiver of the type to which the proposed architecture applies (see Figure 1) would include an analog-to-digital converter (A/D) operating at a rate, fs, of 4 samples per symbol period. To obtain the high speed necessary for sampling, the A/D and a 1:16 demultiplexer immediately following it would be constructed as GaAs integrated circuits. The parallel-processing circuitry downstream of the demultiplexer, including a demodulator followed by an equalizer, would operate at a rate of only fs/16 (in other words, at 1/4 of the symbol rate). The output from the equalizer would be four parallel streams of in-phase (I) and quadrature (Q) samples.

Gray, Andrew↗

Imaging Antenna Structure For Submillimeter Wavelengths

Integrated-circuit antenna structure contains two-dimensional array of antennas and antenna reflectors. In receiving mode, each antenna acts as part of detector for one picture element in millimeter- or submillimeter-wavelength imaging radar system. Millimeter-wave imaging system used to view objects through fog, smoke, or smog with resolution intermediate between microwave and visible-light imaging systems. Antenna elements, supports, and reflectors made by integrated-circuit techniques. Structures fabricated on front and back substrates separately. Substrates then joined. Inexpensive way to provide large number of small antenna elements required for imaging, all mounted rigidly in way that does not degrade operation.

Rebeiz, G.↗

MMICs with Radial Probe Transitions to Waveguides

A document presents an update on the innovation reported in Integrated Radial Probe Transition From MMIC to Waveguide (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. To recapitulate: To enable operation or testing of a monolithic microwave integrated circuit (MMIC), it is necessary to mount the MMIC in a waveguide package that typically has cross-sectional waveguide dimensions of the order of a few hundred microns. A radial probe transition between an MMIC operating at 340 GHz and a waveguide had been designed (but not yet built and tested) to be fabricated as part of a monolithic unit that would include the MMIC. The radial probe could readily be integrated with an MMIC amplifier because the design provided for fabrication of the transition on a substrate of the same material (InP) and thickness (50 m) typical of substrates of MMICs that can operate above 300 GHz. As illustrated in the updated document by drawings, photographs, and plots of test data, the concept has now been realized by designing, fabricating, and testing several MMIC/radial- probe integrated-circuit chips and designing and fabricating a waveguide package to contain each chip.

Samoska, Lorene↗

Artifacts for Calibration of Submicron Width Measurements

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by MBE and etching as described above.

Grunthaner, Frank↗

Triangular-wave generator with controlled sweep polarity

Generator, comprised largely of integrated circuits, has operational amplifier connected as integrator to provide linear voltage ramp, pair of logic gates and one-shot multivibrator function as sweep reverse circuit feeding the integrator. Solid state switch effects generator hold capability.

Wong, H. Y.↗

RFID-Enabled Angular Position Sensing System

An angular position sensing system includes a first support with ring-shaped elements disposed thereon and spaced apart from one another in a curvilinear arrangement. Each ring-shaped element includes an electrically-conductive ring and an RFID integrated circuit electrically coupled to its electrically-conductive ring. A second support has an antenna coupled thereto that defines an electrically-conductive path commensurate in size and shape to at least a portion of the electrically-conductive ring. An interrogator transmits a signal to the antenna wherein electric current is generated along the antenna's electrically-conductive path and electromagnetic energy emanates from the antenna. Any ring-shaped element and its RFID integrated circuit energized by the electromagnetic energy generates in response a data transmission for receipt by the interrogator. A processor coupled to the interrogator derives information related to an angular position of one of the first support and second support using the data transmission.

Fink, Patrick W.↗