Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “diode effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. Furthermore, the observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Software Development for Data Visualization and Analysis of PN-Diodes & MOSFET Devices

The U.S. Department of Energy has a broad mission to ensure the nation’s security by addressing ongoing environmental challenges, developing novel energy production technologies, and mitigating nuclear security concerns. These efforts benefit from developing more effective semiconductor materials and devices. The research discussed in this report aims to further the development of these new electronics by improving implementations of vertical device structures, which offer theoretically better performance compared to lateral structures. Specifically, it reviews the background and development of a new and easy-to-use program for data processing and analysis from experiments run on vertical gallium nitride power devices. Current vertical structures fall short in critical performance metrics, such as On-Resistance and Breakdown Voltage, due to poor management of the device’s electric field. Junction termination extensions, or JTEs, are a field management technique that increases a device’s resilience to expected failure modes by controlling its surface electric fields. Each JTE design requires significant experimental validation, consisting of hundreds of tested devices, each outputting an enormous set of data points. The new software includes multiple methods of filtering large sets of device testing data to identify and remove flawed devices, automate device analyses, and provide statistical breakdowns for four metrics used to define the effectiveness of the JTE and the current carrying capacity of the device. These results can then be related back to fabrication techniques and device design, and in the future, be combined with processing simulations to further improve our understanding of the JTE mechanisms.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗
NASA NTRS1999

Overview of Photonic Materials for Application in Space Environments

Future space systems will he based on components evolving from the development and refinement of new and existing photonic materials. Optically based sensors, inertial guidance, tracking systems, communications, diagnostics, imaging and high speed optical processing are but a few of the applications expected to widely utilize photonic materials. The response of these materials to space environment effects (SEE) such as spacecraft charging, orbital debris, atomic oxygen, ultraviolet irradiation, temperature and ionizing radiation will be paramount to ensuring successful space applications. The intent of this paper is to, address the latter two environments via a succinct comparison of the known sensitivities of selected photonic materials to the temperature and ionizing radiation conditions found in space and enhanced space environments Delineation of the known temperature and radiation induced responses in LiNbO3, AlGaN, AlGsAs,TeO2, Si:Ge, and several organic polymers are presented. Photonic materials are realizing rapid transition into applications for many proposed space components and systems including: optical interconnects, optical gyros, waveguide and spatial light modulators, light emitting diodes, lasers, optical fibers and fiber optic amplifiers. Changes to material parameters such as electrooptic coefficients, absorption coefficients, polarization, conductivity, coupling coefficients, diffraction efficiencies, and other pertinent material properties examined for thermo-optic and radiation induced effect. Conclusions and recommendations provide the reader with an understanding of the limitations or attributes of material choices for specific applications.

Taylor, E. W.↗
DOE OSTI2024

Förster Resonance Energy Transfer and Enhanced Emission in Cs 4 PbBr 6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications

Encapsulating Cs 4 PbBr 6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs 4 PbBr 6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs 4 PbBr 6 pseudo-spherical quantum dots is quenched and is dominated with Pb 2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs 4 PbBr 6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb 2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs 4 PbBr 6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Fiber-Optic Silicon Fabry-Perot Interferometric Bolometer: The Influence of Mechanical Vibration and Magnetic Field

Plasma radiation plays an important role in the operation and control of magnetic confinement fusion and is typically measured by bolometers. Here, we study the influence of mechanical vibration and magnetic field, which are typically present in magnetic confinement fusion devices, on the performance of a fiber-optic bolometer (FOB) based on silicon Fabry-Perot interferometer (FPI) demodulated by a scanning diode laser. It is found that both the vibration and magnetic field could cause large noise due to the birefringence of the silicon FPI. To mitigate the birefringence effects, we demonstrated two effective methods: polarization maintaining FOB and polarization scrambling. We show that two methods can be effective in mitigating the effect caused by the sensor birefringence: (1) replacing the regular single-mode fiber in the FOB system with polarization-maintaining fiber and (2) using a polarization scrambler after the laser source. For both methods, no significant increase in the noise was observed in the vibration and magnetic field tests. Finally, our research highlights the importance of the polarization management for the FOB systems toward their practical applications in magnetic-confinement fusion systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1977

Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

Watanabe, M.↗
NASA NTRS1984

The 12 micron band of ethane - High-resolution laboratory analysis with candidate lines for infrared heterodyne searches

Attention is given to the results of a laboratory study of the v9 band of ethane at 12 microns, using both high resolution Fourier transform and diode laser absorption spectroscopy. The analysis to which about 2000 transitions in this band have been subjected includes the normal rotational terms as well as the higher order effects of l-doubling, l-resonance, internal rotation, and a Coriolis resonance with the 3v4 state. A model is presented for the v9 band which is able to reproduce the observed features to an accuracy of better than 0.001/cm, and a list has been compiled for v9 transitions, occurring near C-14O2 laser lines, that are good candidates for laser heterodyne searches.

Atakan, A. K.↗
NASA NTRS1995

BIB mixers

We have determined that the multi-pin 'microprocessor style' packages in which current Blocked Impurity Band (BIB) devices are mounted will not meet our IF bandwidth spec of greater than 2 GHz for a practical mixer. Hence we have started to repackage the Ga:Ge BIB devices in new microwave compatible packages. The smaller size of the microwave package mount necessitates cutting the BIB array down to include only the 3 smallest detectors: 0.2, 0.4, and 0.6 mm sq. A FIR beam incident at f/1.5 can be focussed on the smallest element for wavelengths shorter than 100 microns. A more typical (easier) beam convergence of f/3 will require 0.4 mm elements at 100 microns and 0.6 mm elements at 170 microns wavelength. Since the device capacitance (parasitic loss) scales with detector size, there is a tradeoff of speed of response and optical convenience. Our existing optics produce only the slower convergence beam, so we need to redesign the optical layout and are looking at long focal length all-reflective microscope objectives. BIB detectors and the edge-coupled microbolometers have restricted IF bandwidths, an order of magnitude less than what is possible with the Schottky-diode mixers we currently use for astronomical observations. Consequently the frequencies of the FIR laser lines must be close to the astronomical line of interest to be an effective Local Oscillator (LO). We have therefore begun a coordinated effort to discover and measure new FIR laser transition lines in close frequency coincidence with important astrophysical lines. Most of this effort involves pumping isotopic variants of known good laser molecules with laser lines from isotopic variants of CO2. We have been most successful in detecting new FIR lines in deuterated ammonia. One line in particular is very close to the frequency of HD rotational line at 2675 GHz.

Source record↗
NASA NTRS1966

Gunn oscillations in indium arsenide.

Gunn oscillations in indium arsenide, measuring electrical properties of diodes, noting current voltage characteristics as function of applied stress

GUNN EFFECT↗
DOE OSTI2025

Pick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication

Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. Here, we demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface. The technique enables transfer of arbitrary-metal electrodes and an electrode array, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. We also demonstrate the electrode array transfer for large-scale device fabrication. The mechanical transfer of metal electrodes from diamond to van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-section high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semimetal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to air-sensitive materials (trilayer 1T’ WTe 2 ) and other applications such as ambipolar transistors, Schottky diodes, and optoelectronics. This highly reliable and reproducible technology paves the way for new device architectures and high-performance devices.

2D materials↗
NASA NTRS1981

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

Kachare, A. H.↗
NASA NTRS1992

Sensors and sensor systems for guidance and navigation II; Proceedings of the Meeting, Orlando, FL, Apr. 22, 23, 1992

Topics discussed in this volume include aircraft guidance and navigation, optics for visual guidance of aircraft, spacecraft and missile guidance and navigation, lidar and ladar systems, microdevices, gyroscopes, cockpit displays, and automotive displays. Papers are presented on optical processing for range and attitude determination, aircraft collision avoidance using a statistical decision theory, a scanning laser aircraft surveillance system for carrier flight operations, star sensor simulation for astroinertial guidance and navigation, autonomous millimeter-wave radar guidance systems, and a 1.32-micron long-range solid state imaging ladar. Attention is also given to a microfabricated magnetometer using Young's modulus changes in magnetoelastic materials, an integrated microgyroscope, a pulsed diode ring laser gyroscope, self-scanned polysilicon active-matrix liquid-crystal displays, the history and development of coated contrast enhancement filters for cockpit displays, and the effect of the display configuration on the attentional sampling performance.

Welch, Sharon S.↗
NASA NTRS1992

Faraday anomalous dispersion optical tuners

Common methods for frequency stabilizing diode lasers systems employ gratings, etalons, optical electric double feedback, atomic resonance, and a Faraday cell with low magnetic field. Our method, the Faraday Anomalous Dispersion Optical Transmitter (FADOT) laser locking, is much simpler than other schemes. The FADOT uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. This method is vibration insensitive, thermal expansion effects are minimal, and the system has a frequency pull in range of 443.2 GHz (9A). Our technique is based on the Faraday anomalous dispersion optical filter. This method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters. We present the first theoretical model for the FADOT and compare the calculations to our experimental results.

Wanninger, P.↗
NASA NTRS1994

Computer modeling of the sensitivity of a laser water vapor sensor to variations in temperature and air speed

Currently, there is disagreement among existing methods of determining atmospheric water vapor concentration at dew-points below -40 C. A major source of error is wall effects which result from the necessity of bringing samples into the instruments. All of these instruments also have response times on the order of seconds. NASA Langley is developing a water vapor sensor which utilizes the absorption of the infrared radiation produced by a diode laser to estimate water vapor concentration. The laser beam is directed through an aircraft window to a retroreflector located on an engine. The reflected beam is detected by an infrared detector located near the laser. To maximize signal to noise, derivative signals are analyzed. By measuring the 2f/DC signal and correcting for ambient temperature, atmospheric pressure and air speed (which results in a Doppler shifting of the laser beam), the water vapor concentration can be retrieved. Since this is an in situ measurement there are no wall effects and measurements can be made at a rate of more than 20 per second. This allows small spatial variations of water vapor to be studied. In order to study the sensitivity of the instrument to variations in temperature and air speed, a computer program which generated the 2f, 3f, 4f, DC and 2f/DC signals of the instrument as a function of temperature, pressure and air speed was written. This model was used to determine the effect of errors in measurement of the temperature and air speed on the measured water vapor concentration. Future studies will quantify the effect of pressure measurement errors, which are expected to be very small. As a result of these studied, a retrieval algorithm has been formulated, and will be applied to data taken during the PEM-West atmospheric science field mission. Spectroscopic studies of the water vapor line used by the instrument will be used to refine this algorithm. To prepare for these studies, several lasers have been studied to determine their output frequency range and power.

Tucker, George F.↗
NASA NTRS1982

Radiation effects studies for the high-resolution spectrograph

The generation and collection of charge carriers created during the passage of energetic protons through a silicon photodiode array are modeled. Pulse height distributions of noise charge collected during exposure of a digicon type diode array to 21 and 75 MeV protons were obtained. The magnitude of charge collected by a diode from each proton event is determined not only by diffusion, but by statistical considerations involving the ionization process itself. Utilizing analytical solutions to the diffusion equation for transport of minority carriers, together with the Vavilov theory of energy loss fluctuations in thin absorbers, simulations of the pulse height spectra which follow the experimental distributions fairly well are presented and an estimate for the minority carrier diffusion length L sub d is provided.

Smith, L. C.↗
DOE OSTI2020

A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes

Until recently, the electrical efficiency of green nitride light-emitting diodes (LEDs) was considerably lower than that of blue LEDs. This is particularly surprising as one would expect a reduced forward voltage with increasing emission wavelength. In this paper, we theoretically investigated the impact of the number of quantum wells on the forward voltage of III-nitride LEDs with x = 0.15 (blue) and x = 0.24 (green) In x Ga1–xN QWs. The simulated dependence of current density (J) on applied diode bias (V) shows a significant increase of 1.9 V in the forward voltage between one and five quantum well (QW) c-plane green LED structures. Artificially turning off the polarization fields in the simulation does not entirely suppress this effect. Due to the large band offsets in the green LED multiple QW stack, simulations indicate a sequential band filling of the QW sequence. Furthermore, this mechanism should not be limited to c-plane LEDs and could also be present in nonpolar or semipolar devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗