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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

A reduced-turbulence regime in the Large Helical Device upon injection of low-Z materials powders

Abstract Recently an improved confinement regime, characterized by reduced turbulent fluctuations has been observed in the Large Helical Device upon the injection of boron powder into the plasma (Nespoli et al 2022 Nat. Phys. 18 350–56). In this article, we report in more detail the experimental observations of increased plasma temperature and the decrease of turbulent fluctuations across the plasma cross section, on an extended database. In particular, we compare powders of different materials (B, C, BN), finding similar temperature improvement and turbulence response for the three cases. Modeling of the powder penetration into the plasma and of neoclassical electric field and fluxes support the interpretation of the experimental results. Additionally, we report evidence of the temperature improvement increasing with powder injection rates and decreasing for both increasing density and heating power. Though, plasma turbulence response varies depending on the initial conditions of the plasma, making it difficult to draw an inclusive description of the phenomenon.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2011

Single Event Effects (SEE) Testing of Embedded DSP Cores within Microsemi RTAX4000D Field Programmable Gate Array (FPGA) Devices

Motivation for this work is: (1) Accurately characterize digital signal processor (DSP) core single-event effect (SEE) behavior (2) Test DSP cores across a large frequency range and across various input conditions (3) Isolate SEE analysis to DSP cores alone (4) Interpret SEE analysis in terms of single-event upsets (SEUs) and single-event transients (SETs) (5) Provide flight missions with accurate estimate of DSP core error rates and error signatures.

Perez, Christopher E.↗
DOE OSTI2020

Sandia National Laboratories FY20 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY20 the Energetic Neutrons campaign increased the number and complexity of experiments, continued collaborations with external organizations, and generated knowledge that supports SNL’s National Security mission. In FY20 the Energetic Neutrons campaign was executed by an early career team led by a new PI. The SNL team members were trained to take over new responsibilities during the shot day to increase the number and complexity of experiments in the campaigns. Also, in FY20 for the first time the Energetic Neutrons campaign had a graduate student contributing with pre and post-irradiation characterizations at SNL of the semiconductor devices irradiated at OMEGA. In FY20 SNL collaborated with the Air Force Nuclear Weapons Center (AFNWC) and supported experiments related to radiation effects in semiconductor devices. SNL also gave the opportunity to ride along to Los Alamos National Laboratory and multiple scientists from MIT and LLE. SNL continued using the last two generations of the Neutron Effects Diagnostics (NEDs) to field active and passive experiments but also redesigned the latest generation of the NEDs to accommodate larger components and improve the vacuum sealing as shown in figure 1a. The redesigned NEDs allowed SNL to perform active tests of a high voltage (HV) PCB for the first time at OMEGA; where signals before, during and after the irradiation were recorded. The HV PCB installed in one of the SNL NEDs is shown in figure 1b where a 3D-printed nosecone was used to check for mechanical and electrical interference. Passive irradiations of multiple components were followed up with leakage current, gain measurements and radiation-induced defect characterization.

42 ENGINEERING↗
DOE OSTI2020

Thermionic emission and energy conversion

This project worked on development of a transformative heat-to-electricity conversion device based on thermionic energy conversion. The research provided a unique opportunity to transform the thermionics technology of the 1950-1990s by applying modern materials and 21st century wafer-scale fabrication methods. Research was conducted to further development of a thermionic energy converter based on modern microfabrication and new low work function anode materials that can surpass all other forms of direct heat-to-electricity conversion. This project completed the following goals: (1) Developed components for use in thermionic energy converters and electron emission devices, including electrode materials for electron emission and electron absorption with ultimate work functions below 5 eV; (2) Designed and fabricated thermionic devices for energy conversion and electron emission based on the components developed in (1); (3) Engineered test systems to characterize electronic, thermal, and mechanical properties of thermionic devices and electron emitters and their components, and test devices and components designed and fabricated in (1) and (2); and (4) Developed theoretical modeling capabilities in support of these technical objectives.

36 MATERIALS SCIENCE↗
NASA NTRS2008

NASA's Cryogenic Fluid Management Technology Project

The Cryogenic Fluid Management (CFM) Project's primary objective is to develop storage, transfer, and handling technologies for cryogens that will support the enabling of high performance cryogenic propulsion systems, lunar surface systems and economical ground operations. Such technologies can significantly reduce propellant launch mass and required on-orbit margins, reduce or even eliminate propellant tank fluid boil-off losses for long term missions, and simplify vehicle operations. This paper will present the status of the specific technologies that the CFM Project is developing. The two main areas of concentration are analysis models development and CFM hardware development. The project develops analysis tools and models based on thermodynamics, hydrodynamics, and existing flight/test data. These tools assist in the development of pressure/thermal control devices (such as the Thermodynamic Vent System (TVS), and Multi-layer insulation); with the ultimate goal being to develop a mature set of tools and models that can characterize the performance of the pressure/thermal control devices incorporated in the design of an entire CFM system with minimal cryogen loss. The project does hardware development and testing to verify our understanding of the physical principles involved, and to validate the performance of CFM components, subsystems and systems. This database provides information to anchor our analytical models. This paper describes some of the current activities of the NASA's Cryogenic Fluid Management Project.

Tramel, Terri L.↗
DOE OSTI2022

Anion diffusion in two-dimensional halide perovskites

Commercialization of halide perovskites in the semiconductor industry is hindered by their short-term stability. The instability of perovskites is closely interlinked with ionic diffusion. Historically, attempts to study diffusion in 2D perovskites mostly utilized electrical characterizations, but these characterizations pose a challenge in deconvoluting the impact of device architecture, interlayers, and ionic species. In this Perspective, we focus our attention on simple optical characterizations employed in the literature to investigate halide diffusion in 2D perovskites using lateral and vertical heterostructure platforms. We review the various synthesis techniques used for fabrication of halide perovskite heterostructures and discuss the qualitative and quantitative diffusion studies performed using these platforms. We discuss the numerical methods used to validate and supplement the experimental halide diffusion kinetics. Finally, we highlight the need to conduct further research on the impact of device operating conditions, lattice structure, and vacancy concentration on halide diffusion. Through this Perspective, we aim to emphasize the need of developing a comprehensive understanding of halide diffusion in perovskites for their successful deployment in optoelectronics.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Oscillator devices using thick-film technology

The Electrical Engineering Department of North Carolina Agricultural and Technical State University has developed a microelectronics laboratory as a result of research involving microelectronics and metallic-oxide studies over the past five years. Work on characterization and applications of metallic-oxide devices is currently being conducted. This paper reports on the fabrication of eight oscillator devices on a 1-in. square alumina substrate using metallic-oxide materials developed as a result of the research program. Significant technological capabilities of the laboratory relative to the microelectronics industry in the area of microelectronic-component evaluation are also discussed.

Williams, L., Jr.↗
DOE OSTI2026

Impedance Based Fixture Neutralization (FINE) Method to Replicate Field Environments in Laboratory Settings

Test article vibration test responses will vary from one test laboratory to another due to differences in shaker and fixture dynamic characteristics. This is also seen between the field and laboratory due to the differing dynamic characteristics between field assembly loading and boundary conditions compared to the laboratory configuration. This work introduces a technique called Impedance Fixture Neutralization which customizes input forces to cause consistent responses for the Device Under Test across different vibration testing conditions. The customized force neutralizes the dynamic variations between configurations for the Device Under Test. The device responses can be replicated in several situations: when using a different fixture with the same attachment points, when the test article mounting location on the fixture changes, when the force location changes, or any combination of these situations. Impedance Fixture Neutralization uses the uncoupled dynamic characteristics of the test article and excitation fixtures to customize the input thereby causing the same test article responses between two mounting configurations (either field to laboratory or two different laboratory configurations). The application of the technique is shown using an analytical model of a two-beam system and analytically using experimental FRFs from plate and frame component hardware characterization tests. In both cases a device under test is attached to two test fixtures wherein the dynamic differences in the configurations are neutralized.

Laboratory↗
DOE OSTI2023

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗
NASA NTRS1992

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating conditions. Current noise characterization was measured at the drain in the temperature range 300 to 77 K. Device design and MBE processing are described. Static I-V characterization is done at 300, 77 and 6 K. The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered as a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to that of Si MOSFETs operating at liquid helium temperatures, and is equal to the best Si n-JFETs operating at 300 K.

Goebel, John H.↗
DOE OSTI2026

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗
DOE OSTI2024

Stability optimization of energetic particle driven modes in nuclear fusion devices: the FAR3d gyro-fluid code

The development of reduced models provide efficient methods that can be used to perform short term experimental data analysis or narrow down the parametric range of more sophisticated numerical approaches. Reduced models are derived by simplifying the physics description with the goal of retaining only the essential ingredients required to reproduce the phenomena under study. This is the role of the gyro-fluid code FAR3d, dedicated to analyze the linear and nonlinear stability of Alfvén Eigenmodes (AE), Energetic Particle Modes (EPM) and magnetic-hydrodynamic modes as pressure gradient driven mode (PGDM) and current driven modes (CDM) in nuclear fusion devices. Such analysis is valuable for improving the plasma heating efficiency and confinement; this can enhance the overall device performance. The present review is dedicated to a description of the most important contributions of the FAR3d code in the field of energetic particles (EP) and AE/EPM stability. FAR3d is used to model and characterize the AE/EPM activity measured in fusion devices as LHD, JET, DIII-D, EAST, TJ-II and Heliotron J. In addition, the computational efficiency of FAR3d facilitates performing massive parametric studies leading to the identification of optimization trends with respect to the AE/EPM stability. This can aid in identifying operational regimes where AE/EPM activity is avoided or minimized. This technique is applied to the analysis of optimized configurations with respect to the thermal plasma parameters, magnetic field configuration, external actuators and the effect of multiple EP populations. In addition, the AE/EPM saturation phase is analyzed, taking into account both steady-state phases and bursting activity observed in LHD and DIII-D devices. The nonlinear calculations provide: the induced EP transport, the generation of zonal structures as well as the energy transfer towards the thermal plasma and between different toroidal/helical families. Finally, FAR3d is used to forecast the AE/EPM stability in operational scenarios of future devices as ITER, CFETR, JT60SA and CFQS as well as possible approaches to optimization with respect to variations in the most important plasma parameters.

Alfv én Eigenmodes↗
NASA NTRS1973

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Bullis, W. M.↗
DOE OSTI2021

Demonstration and Validation of Additively Manufactured Intensified Device for Enhanced Carbon Capture

In FY 2018 and 2019, ORNL personnel designed, prototyped, characterized, and tested the enhancement of amine-based carbon capture using additively manufactured intensified devices, i.e., devices combining multiple thermodynamic and kinetic processes into one unit operation. State of the art scrubbing technology often employs inter-stage cooling which requires multiple stages of single-purpose unit operations, leading to larger equipment size, higher capital cost, and sometimes less than optimal operating conditions for each piece of equipment. It was proposed that integrating multiple thermodynamic and kinetic operations into one unit could mitigate or negate these drawbacks. Heat and mass transfer studies demonstrated that an additively manufactured intensified device could significantly improve capture efficiency at bench scale. This project is a continuation of FEAA130 and aims at (1) demonstration and validation of enhanced CO 2 capture with 3D printed intensified devices (i.e., mass exchanger packing with internal cooling channels), for low-aqueous-solvent (LAS) based capture at the ORNL-constructed laboratory-scale (4.5-feet tall) column, namely Column A, with built-in cooling and (2) computational scoping on the conceptual design of a flexible and modular larger column, namely Column B, at ORNL for further demonstration of enhanced capture for aqueous solvent. To execute this multi-faceted project scope, an integrated project team from ORNL’s Manufacturing Science Division is tasked with applying capabilities in computational fluid dynamics (CFD), additive manufacturing, and absorber-scale demonstration/validation experiments.

42 ENGINEERING↗
DOE OSTI2026

Advanced flip-coil system for magnetic field integral measurements of insertion devices

A novel flip-coil measurement system has been developed for the National Synchrotron Light Source II (NSLS-II) at Brookhaven National Laboratory. This paper describes the design, implementation, and commissioning of the new measurement bench, highlighting its key features, including improved mechanical stability, advanced data acquisition, and enhanced reproducibility. The system enables precise characterization of field integrals and multipole components, ensuring the optimal performance of Insertion Devices (IDs) before installation in the NSLS-II storage ring. The flip-coil system incorporates an innovative approach to minimize mechanical and electrical errors, which significantly improves the reproducibility of measurements. In addition, the system features a state-of-the-art data acquisition system that enables real-time monitoring and analysis, further enhancing the efficiency and accuracy of the measurement process. Furthermore, preliminary tests have demonstrated that the new system meets the stringent requirements for magnetic field characterization of advanced insertion devices, making it an essential tool for future ID commissioning and quality assurance at NSLS-II.

36 MATERIALS SCIENCE↗