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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Electron microprobe and petrographic analyses of an Apollo 15 sample, 15382, from the Apennine Front, have revealed KREEP chemistry and very low concentrations of the characteristic meteorite siderophile elements: Ir, Os, Re, Au, and Ni. It is a crystalline basalt, practically identical in texture and mineral zoning patterns to other lunar high-alumina basalts.
The petrology, mineralogy, and composition of 13 crystalline matrix breccias from the Apollo 17 rake samples are described. The breccias have matrices of uniform modal mineralogy (plagioclase, 50-54%; olivine and pyroxene, 41-46%) but diverse textures. Clast characteristics, including the proportion of plagioclase, the composition in comparison with matrix, and the textures of different clast types, are reported. The majority of bulk matrix compositions plot on or very near the plagioclase-olivine cotectic in the system olivine-anorthite-silica. If the matrix compositions represent impact total melts, the inferred cotectic control requires that the source material was itself an igneous differentiate with compositions along the plagioclase-olivine cotectic. Alternatively, the proximity of the matrix compositions to the plagioclase-olivine cotectic could be accounted for if the breccia matrices represent a suite of impact-generated partial melts.
Molecular dynamics was used to study the structure, dispersion and short-time behavior of ten-atom clusters adsorbed onto amorphous and crystalline substrates, in which the cluster atoms differed from the substrate atoms. Two adatom-substrate model systems were chosen; one, in which the interaction energy between adatom pairs was greater than that between substrate pairs, and the other, in which the reverse was true. At relatively low temperature ranges, increased dispersion of cluster atoms occurred: (a) on the amorphous substrate as compared to the FCC(100) surface, (b) with increasing reduced temperature, and (c) with adatom-substrate interaction energy stronger than adatom-adatom interaction. Two-dimensional clusters (rafts) on the FCC(100) surface displayed migration of edge atoms only, indicating a mechanism for the cluster rotation and shape changes found in experimental studies.
The high-efficiency crystalline silicon solar cells research forum addressed high-efficiency concepts, surface-interface effects, bulk effects, modeling and device processing. The topics were arranged into six interactive sessions, which focused on the state-of-the-art of device structures, identification of barriers to achieve high-efficiency cells and potential ways to overcome these barriers.
The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.
The rationale for pursuing high efficiency crystalline silicon technology research is discussed. Photovoltaic energy systems are reviewed as to their cost effectiveness and their competitiveness with other energy systems. The parameters of energy system life are listed and briefly reviewed.
Two basic findings were presented in the outlined report. The first is that silicon has a very high potential efficiency, demonstrated improvement in reliability and a significant potential for cost reductions. The second is that the photovoltaic technology development process is highly uncertain, but crystalline silicon technology has a substantial knowledge base to draw from, improving its chances of success. Several issues to be addressed are outlined.
This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.
A comparative review of mineralogical, chemical, and chronological data on crystalline Apollo 16 impact melt rocks is presented. The use of such data to identify distinct impact melt complex is discussed, and 22 distinct impact melt bodies are identified. The recently detected group of feldspathic microporphyritic (FM) melt rocks was tested for chemical and isotopic homogeneity; instrumental neutron activation analysis and new Rb-Sr isotopic whole rock data indicate that FMs were probably not derived from a single impact melt sheet, but might be representative of the Descartes basement. Stratigraphical and chronological concepts for the geological development of the landing site are discussed, and a model is presented for the formation of the Cayley Plains and the Descartes formation.
The birefringence of crystalline substances in general, and of sapphire in particular, is described. A test is described whose purpose is to determine the direction of the optic axis of a cylindrically machined single crystal of sapphire. This test was performed on the NASA Lewis sapphire cylinder and it was found that the optic axis made an angle of 18 deg with the axis of symmetry of the cylinder.
The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.
A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.
The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was directed toward the investigation and use of such techniques as Angular Resolved Parameter Spectroscopy (ARAPS) and Impedance Spectroscopy in initially characterizing n-type Si doped to levels commonly used for n+p solar cells, and eventually Si solar cells. The objectives of the research are given. Those accomplished are detailed, as are recommendations for future work.
The factors which may limit current crystalline silicon solar cells to less than 20 percent efficiency at AM 1 are investigated together with the factors which may limit the ultimate efficiency achievable. It was found that base recombination at residual defect and impurity recombination centers was the likely cause of the 20-percent efficiency barrier. Suggestions for design changes that would cut the losses due to recombinations are presented.
LARC-TPI, a linear aromatic polyimide, developed by NASA Langley Research Center in the late 1970's had thermoplastic character, but its melt-flow properties were much lower than those of conventional thermoplastics. An imidized version of the LARC-TPI molding powder was submitted to NASA-Langley for evaluation. The initial broad melt of this material occurs in the 270 C range and reorders to higher melting forms, depending on the physical and thermal treatments. Rheological characterization of this polymer shows it to have a very low melt viscosity, which increases as the melted specie transforms to other crystalline forms with higher melting temperatures.
The infrared absorption spectra of thin crystalline films of sulfur dioxide at 90 K are reported in the 2700 to 450/cm region. The observed multiplicity of the spectral features in the regions of fundamentals is attributed to factor group splittings of the modes in a biaxial crystal lattice and the naturally present minor S-34, S-36, and O-18 isotopic species. Complex refractive indices determined by an iterative Kramers-Kronig analysis of the extinction data, and absolute band strengths derived from them, are also reported in this region.
A mineral analysis method is described for rapid quantitative determination of crystalline substances in those cases in which the sample is present in pure form or in a mixture of known composition. With this method there is no need for prior chemical analysis.
Thermal IR absorption intensities are obtained for thin films of crystalline C2H2 and C4H2 at 70 K, and their n and k complex refractive indices are ascertained by separating true film absorption from interface reflection on the basis of an analysis of the transmission spectrum ratio for two sample thicknesses. This method significantly simplifies the n and k iteration process. The n and k values determined in the laboratory will in most cases reproduce a given sample thickness' observed transmission to within + or - 5 percent.