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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Study on Conversion from an Existing Alternating Current Medium-Voltage Line to a Direct Current Line: A Case of Load or Source Expansion

Simultaneous increase of power generation through renewable systems and load due owing to the rapid growth in electrified road transportation systems, leads to new challenges in the design, operation, and protection of distribution-level electrical power systems. This paper addresses challenges related to the integration of new sources or loads to a distribution grid through long alternating current lines. The International Council on Large Electric Systems medium-voltage benchmark model developed for North America was used for simulation studies. Use cases were developed to illuminate the issues related to long alternating current lines and the usefulness of medium-voltage direct current lines in a distribution network.

Jaldanki, Sreenivasa↗
DOE OSTI2022

Voltage and Current Response Characteristics of PMU Device by PCI Simulation

Phasor Measurement Units (PMUs) are critical for the Wide Area Measurement System (WAMS), especially for real-time grid monitoring, disturbance location, and situation awareness. Once they are damaged, the stable operation of power system will be affected directly and greatly. As new electronic devices in power system, their immunity to electromagnetic pulse (EMP) events needs to be studied. In this paper, an effective impedance measurement scheme is proposed for port impedance measurement of PMU. A non-uniform transmission line model is established to eliminate the impact of fixture in the de-embedding process. Then circuit of pulse current generator is established to generate damping sinusoid and double exponential wave applied to the port. Finally, by using measured impedance as load of the generator, the voltage and current responses of different ports are calculated in the pulsed current injection (PCI) simulation. Results shows the characteristics of port impedance, voltage and current waveforms. The relation between port impedance and the waveforms is discussed.

Zhang, Liang↗
DOE OSTI2025

Operation and Control of Electric Vehicle Charger with Enhanced Dynamic Performance Under Non-Ideal Grid Voltage Condition

This paper presents a three-phase electric vehicle charger connected to the grid, featuring multiple boost converters on the DC side, specifically designed to ensure smooth, oscillation-free power transfer during unsymmetrical voltage sags. Precise control mechanisms are implemented on the boost converter side to regulate both voltage and current on the electric vehicle side, thereby maintaining optimal charging conditions. The control architecture for both the grid-connected and boost converter components is based on the Lyapunov energy function, which is employed to achieve superior dynamic performance and stability. The system's robustness and reliability are demonstrated through its ability to maintain stable operation and efficient power transfer despite fluctuations in grid conditions. Furthermore, the implementation of Lyapunov-based control ensures rapid response and minimal energy loss, enhancing the overall efficiency of the system. To validate the effectiveness of this approach, a comprehensive model of the system was developed and tested using MATLAB/Simulink, with detailed computer simulations conducted across various significant case studies.

DC-DC boost converter↗
DOE OSTI2022

DERMS Online: A New Voltage Sensitivity-Enabled Feedback Optimization Framework

This paper proposes a distributed energy resource management system (DERMS) solution by developing a new voltage sensitivity-enabled feedback optimization framework. The key idea is to adopt a measurement feedback scheme to reformulate the original nonlinear optimization into a linear programming (LP) problem via perturb-and-observe-based voltage sensitivity analysis. The proposed solution eliminates the dependence on load knowledge and can be implemented online thanks to an efficient open-source solver for LP problems. Comparison results with other control methods on a real distribution feeder in Southern California highlight the feasibility as well as benefits for the proposed framework.

distributed energy resource management↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Precursor Reaction Method With High Ga Cu(In,Ga)(S,Se)$_{2}$ to Achieve Increased Open-Circuit Voltage

The precursor reaction process for the fabrication of Cu(In,Ga)Se 2 solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experiments. Thus far, research on the precursor reaction method has been restricted to relatively low Ga compositions with Ga/(In+Ga) ≈ 25%. By increasing the ratio of Ga, it is possible to increase the bandgap, and thus, increase the open-circuit voltage. This work develops and characterizes the precursor reaction process for use with Ga/(In+Ga) ≈ 50%, with the goal of improving the open-circuit voltage and efficiency. It is shown that with an increased Ga ratio, increased V ∞ is achieved, but the rate of conversion from the precursor to absorber phases is decreased. Additionally, increased Ga improves the film adhesion at increased selenization temperatures as well as improving the film morphology.

14 SOLAR ENERGY↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60 degrees C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 degrees C/70% RH for 200 h; and 85 degrees C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage curve tracing. Final characterizations included: Suns-Voc, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2025

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗
DOE OSTI2021

High-Voltage CMOS Active Pixel Sensor

The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 µm can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm 2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Assessing the Accuracy of Balanced Power System Models in the Presence of Voltage Unbalance

Traditional models of electric power systems represent distribution systems with unbalanced three-phase network models and transmission systems with balanced single-phase-equivalent network models. This distinction poses a challenge for coupled models of transmission and distribution systems, which are becoming more prevalent due to the growth of distributed energy resources connected to distribution systems. In order to maintain a balanced network representation, transmission system models typically assume that the voltage phasors at the interface to the distribution system are balanced. Inaccuracies resulting from this assumption during unbalanced operation can lead to erroneous values for line currents in the transmission system model. This paper empirically quantifies the accuracy of this balanced operating assumption during unbalanced operating conditions for both a simple two-bus system along with a more complex transmission and distribution co-simulation. This paper also characterizes the performance of different methods for translating the unbalanced voltage phasors into a balanced representation in order to give recommendations for modeling coupled transmission and distribution systems.

power distribution↗
DOE OSTI2023

Fault Clearing Operation in Low-Frequency High-Voltage AC Systems

Abstract—Low-frequency high-voltage ac (LF-HVac) system has been proposed as an alternative to HVdc and HVac systems to reduce transmission losses and improve grid flexibility. LF-HVac system employs back-to-back (BTB) converters to interconnect and control the voltage and power interchange between two power grid operating at different frequencies. While there are multiple studies on LF-HVac system in the literature, the fault clearing method in the LF-HVac system has not been analyzed. Therefore, this paper focuses on fault clearing operation in LFHVac system and proposes a novel method to reduce fault current by changing operating frequency of power source and converter. The performance of the proposed method is validated using detailed models of BTB converters developed in PSCAD/EMTDC. The ability to change operating frequency at the onset of a fault condition allows breakers to rapidly clear the fault and recloses. The results obtained by using the proposed method substantially diminish the fault current.

Kim, Woosung↗
DOE OSTI2021

Linking Transient Voltage to Spatially-Resolved Luminescence Imaging to Understand Reliability of Perovskite Photovoltaics

In this work, we present a methodology to separate effects of perovskite device metastability from irreversible degradation, using stress/rest cycling under constant current bias while collecting a series of electroluminescence images and continuously monitoring voltage. We develop a simulation model and procedures for image processing to better understand the effects of ion parameters on the transient nature of voltage and evolving electroluminescence images.

electroluminescence↗
DOE OSTI2024

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

The switching pole voltage can transition between P,0, and N states in a three-level active neutral point clamped (ANPC) inverter. State transitions between 0-P and 0-N can be realized with different switching modes. Three switching modes- Short 1 , Short 2 , and Full are studied considering the effect of capacitive current paths. The role of clamping and inner switch on/off conditions is determined using simplified equivalent circuit models. Short 2 with clamping switch off is beneficial for turn-on overvoltage suppression but results in high turn-off overvoltage. Full mode with a parallel current sharing path is effective for turn-off overvoltage suppression but leads to high turn-on overvoltage. Hence, a Modified Full mode is proposed to achieve the simultaneous objective of overvoltage suppression at both turn-on and turn-off transient during high load currents. This benefits 3L ANPC operation at a low power factor with a high load current at fundamental voltage zero crossing points. Here, a 650V GaN-based three-level ANPC inverter prototype is designed and used to evaluate the switching modes and overvoltage suppression strategies through double pulse tests and continuous operation.

42 ENGINEERING↗
DOE OSTI2026

Safe Deep Reinforcement Learning for Robust Frequency and Voltage-Constrained Networked Microgrid Restoration

Here, this paper proposes a safe soft actor-critic reinforcement learning (RL) algorithm–based controller for networked microgrid restoration. It formulates the post black-start start as a finite-horizon constrained Markov decision process. The RL agent co-optimizes real and reactive power set-points for both grid-forming and grid-following inverters under explicit voltage and frequency constraints, while enforcing proper power sharing via the Mean Active Power Sharing Index (MPSI) and Mean Reactive Power Sharing Index (MQSI). Numerical results obtained on the IEEE 123-bus distribution system show that the proposed method achieves a mean voltage build-up time of 0.01 s without breaching the 5% sharing-violation budget under various load scenarios, considering MPSI and MQSI indices. These findings demonstrate that the proposed method yields fast and safe black-start schedules without resorting to heuristic penalties.

Selim, Alaa [Dartmouth College, Hanover, NH (Unite↗
DOE OSTI2023

A Hybrid Transmitter With Voltage-Mode SST Preemphasis and Current-Mode Transmitter Equalization Capable of Operating at 77 K in DUNE

The Deep Underground Neutrino Experiment (DUNE) requires that the front-end transmitters operate at cryogenic temperature and drive 25–35 m long twin-axial (twinax) cables. Here, to compensate the frequency-dependent channel loss over the long cables and alleviate the de-emphasizing of the low-frequency signal magnitude, a hybrid of a current-mode (CM) transmitter equalization (TXEQ) and a voltage-mode (VM) preemphasis is proposed. The TXEQ employs a finite-impulse response (FIR) filter to boost the high-frequency components while de-emphasizing the low-frequency signal magnitude, thereby flattening the overall channel frequency response and reducing the intersymbol interference (ISI). The VM preemphasis is proposed to further mitigate ISI by boosting the high-frequency portion without degrading the signal magnitude, allowing for high signal swing. The main driver utilizes VM source-series-terminated (SST) output stages, which offers higher signal swing and better power efficiency than the conventional CM logic (CML) drivers. To ensure the lifetime and reliability at cryogenic temperature, the transmitter is implemented in a 65-nm CMOS process operating at 1.1 V of supply voltage and employing transistors with larger than minimum lengths. Silicon measurement results at 77 K have validated the proposed approaches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Modeling the Low-Pressure High-Voltage Branch of the Paschen Curve for Hydrogen and Deuterium

A physical and numerical model of the Townsend discharge in molecular hydrogen and deuterium has been developed to meet the needs of designing a plasma-based switching device for power grid applications. Here, the model allows to predict the low-pressure branch of the Paschen curve for applied voltage in the range of several hundred kilovolts. In the regime of interest, electrons are in a runaway state and ionization by ions and fast neutrals sustains the discharge. It was essential to correctly account for both gas-phase and surface interactions (electron emission and electron backscattering), especially in terms of their dependence on particle energy. The model yields results consistent with prior data obtained for lower voltage. The three-species (electrons, ions, and fast neutrals) model successfully captures the essential physics of the process.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Online Voltage Event Detection Using Synchrophasor Data with Structured Sparsity-Inducing Norms

This paper develops an accurate and computationally efficient data-driven framework to detect voltage events from PMU data streams. It develops an innovative Proximal Bilateral Random Projection (PBRP) algorithm to quickly decompose the PMU data matrix into a low-rank matrix, a row-sparse event-pattern matrix and a noise matrix. Here, the row-sparse pattern matrix significantly distinguishes events from normal behavior. These matrices are then fed into a clustering algorithm to separate voltage events from normal operating conditions. Large-scale numerical study results on real-world PMU data show that the proposed algorithm is computationally more efficient and achieves higher F scores than state-of-the-art benchmarks.

24 POWER TRANSMISSION AND DISTRIBUTION↗