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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Diagenetic Features in Yellowknife Bay, Gale Crater, Mars: Implications for Substrate Rheology and Potential Gas Release

Multiple diagenetic features have been observed in clay­-bearing mudstone exposed within Yellowknife Bay, Gale Crater, Mars. These features occurred during at least two separate episodes: an early generation of spheroidal concretions that co-­occur with a dense networks of mineralized fractures, and a later generation of mineralized veins. Concretions consist of mm-sized spheroids (0.4 to 8.0 mm, mean diameter of 1.2 mm) that are distinctly more resistant than the encompassing mudstone. Dissected spheroids suggest an origin via compaction and incipient lithification of the substrate at the perimeter of syndepositional void space. Concretions are generally patchy in their distribution within clay-‐bearing mudstone, but in places can be the dominant fabric element. Locally dense networks of mineralized fractures occur in regions of low concretion abundance. These consist of short (< 50 cm), curvilinear to planar mineralized voids that occur across a range of orientations from vertical to subhorizontal. Fractures are filled by multi-phase cement consisting of two isopachous, erosionally resistant outer bands, and a central less resistant fill. Physical relationships suggests that original fractures may have formed as both interconnected voids and as discrete cross--cutting features. Co--occurrence of early diagenetic concretions and fracture networks suggests a common origin via gas release within a subaqueous, shallow substrate. We suggest that gas release within weakly cohesive subsurface sediments resulted in substrate dewatering and an increase in the cohesive strength of the substrate. Local differences in substrate strength and rate of gas production would have result in formation of either discrete voids or fracture networks. A second generation of mineralized veins is characterized by a regionally low spatial density, predominantly vertical or horizontal orientations, and a single phase of Ca-‐sulfate mineral fill. These veins cross-cut the early diagenetic elements and intersect a greater thickness of stratigraphy within Yellowknife Bay, suggesting a later-‐diagenetic origin via hydraulic fracturing.

Kah, L. C.↗
DOE OSTI2015

Method for forming a nano-textured substrate

A method for forming a nano-textured surface on a substrate is disclosed. An illustrative embodiment of the present invention comprises dispensing of a nanoparticle ink of nanoparticles and solvent onto the surface of a substrate, distributing the ink to form substantially uniform, liquid nascent layer of the ink, and enabling the solvent to evaporate from the nanoparticle ink thereby inducing the nanoparticles to assemble into an texture layer. Methods in accordance with the present invention enable rapid formation of large-area substrates having a nano-textured surface. Embodiments of the present invention are well suited for texturing substrates using high-speed, large scale, roll-to-roll coating equipment, such as that used in office product, film coating, and flexible packaging applications. Further, embodiments of the present invention are well suited for use with rigid or flexible substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Maintainable substrate carrier for electroplating

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Method of making an apparatus for transpiration cooling of substrates such as turbine airfoils

A method and apparatus for generating transpiration cooling using an oxidized porous HTA layer metallurgically bonded to a substrate having micro-channel architectures. The method and apparatus generates a porous HTA layer by spreading generally spherical HTA powder particles on a substrate, partially sintering under O.sub.2 vacuum until the porous HTA layer exhibits a porosity between 20% and 50% and a neck size ratio between 0.1 and 0.5, followed by a controlled oxidation generating an oxidation layer of alumina, chromia, or silica at a thickness of about 20 to about 500 nm. In particular embodiments, the oxidized porous HTA layer and the substrate comprise Ni as a majority element. In other embodiments, the oxidized porous HTA layer and the substrate further comprise Al, and in additional embodiments, the oxidized porous HTA layer and the substrate comprise .gamma.-Ni+.gamma.'-Ni.sub.3Al.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗
DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Distributed measurement of minimum and maximum in-situ stress in substrates

A system for performing distributed measurements of in-situ stress includes an expandable element with at least one fiber optic sensor. The expandable element can be positioned at various depths in a hole in a substrate. A pressurizing device expands (and contracts) the expandable element when the expandable element is inserted in the hole in the substrate to exert pressure on the hole wall. A pressure sensor provides a sensor output indicative of a pressure applied to the hole wall by the expandable element. The fiber optic sensor and an optical interrogator measure strain along a length of the sensor in a continuous, high spatial resolution manner Based on the measured strain and pressure sensor output, the system determines various properties of the substrate such as, minimum principal stress, maximum principal stress, and/or principal stress direction associated with one or more fractures in the substrate, as well as substrate modulus.

Ohanian, III, Osgar John↗
DOE OSTI2024

Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Lattice-matched substrates are critical for growth of high quality, compositionally-targeted ternary AlyX1-yN compounds with properties suitable for a wide variety of next-generation opto- and power electronic applications. [DOI:10.1149/2.0111702jss] We have identified the (111) plane of transition metal carbides and nitrides as lattice matched "virtual" substrate layers that have additional benefits of electrical conductivity and appropriate coefficients of thermal expansion for nitride layer at both growth and operating temperatures. [arXiv:2208.11769 2022] In this work, (111)-oriented TaC and ZrN are grown by RF sputtering and optimized as substrate layers for AlyGa1-yN and AlyGd1-yN, respectively. TaC is demonstrated as a full proof of concept. (111)-stabilized TaC layers with a rock-salt crystal structure are annealed to improve surface crystal quality and surface morphology and then used as a template for growth of an Al0.7Ga0.3N layer by molecular beam epitaxy. X-ray diffraction (XRD) demonstrates epitaxial registry of the grown layer to the substrate. High resolution transmission electron microscopy (TEM) is used to investigate interface behavior, showing regions of abrupt interface transitions and nitrogen polar termination of the Al0.7Ga0.3N. We also grew (111)-oriented ZrN on Ti-Zr-N graded buffer layers as a lattice-matched virtual substrate for AlyGd1-yN. Structure, morphology, and strain are analyzed using XRD and atomic force microscopy. Structure and quality of initial Al0.8Gd0.2N thin films are investigated for both in-situ and ex-situ growths.

AlyX1-yN↗
DOE OSTI2024

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗
DOE OSTI2019

Optimized Substrates and Measurement Approaches for Raman Spectroscopy of Graphene Nanoribbons

The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this work, Raman spectroscopy is used to characterize different types of GNRs on their growth substrate and track their quality upon substrate transfer. A Raman-optimized (RO) device substrate and an optimized mapping approach are presented that allow for the acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO 2 /Si substrates. This approach is well suited to routinely monitor the geometry-dependent low-frequency modes of GNRs. In particular, the radial breathing-like mode (RBLM) and the shear-like mode (SLM) for 5-, 7-, and 9-atom-wide armchair GNRs (AGNRs) are tracked and their frequencies are compared with first-principles calculations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Direct processing of PbZr 0.53 Ti 0.47 O 3 films on glass and polymeric substrates

This work reports on direct crystallization of PbZr 0.53 Ti 0.47 O 3 (PZT) thin films on glass and polymeric substrates, using pulsed thermal processing (PTP). Specifically, xenon flash lamps deliver pulses of high intensity, short duration, broadband light to the surface of a chemical solution deposited thin film, resulting in the crystallization of the film. Structural analysis by X-ray diffraction (XRD) and transmission electron microscopy show the existence of perovskite structure in nano-sized grains (≤5 nm). Local functional analysis by band excitation piezoelectric spectroscopy and electrostatic force microscopy confirm the presence of a ferroelectric phase and retention of voltage-written polarization for multiple days. Based on structural and functional analyses, strategies are discussed for optimization of pulse voltage and duration for the realization of crystalline ferroelectric thin films. For ~200 nm-thick PZT films on glass substrates, 500 μs-long pulses were required for crystallization, starting with 100 pulses at 350 V, 10 or 25 pulses at 400 V and in general lower number of pulses at higher voltages (resulting in higher radiant energy). Overall power densities of >6.4 kW/cm 2 were needed for appearance of peaks corresponding to the perovskite phase in the XRD. Films on glass processed at 350–400 V had a higher degree of 111-oriented perovskite grains. Higher applied radiant energy (through increased pulse voltage or count) resulted in more random and/or partially 001-oriented films. For ~1 μm-thick PZT films on polymeric substrates, 10 to 25 250 μs-long pulses at voltages ranging between 200 to 250 V, corresponding to power densities of ~2.8 kW/cm 2 , were optimal for maximized perovskite phase crystallization, while avoiding substrate damage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Abstract Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Substrate-Driven Catalyst Reducibility for Oxygen Evolution and Its Effect on the Operation of Proton Exchange Membrane Water Electrolyzers

To increase the efficiency of hydrogen production by proton exchange membrane water electrolyzers (PEMWEs), the relationships between the specific activity and stability of the membrane–electrode assembly (MEA) must be clarified. Ir oxide electrodeposited on Ti substrate is used as an oxygen electrode, and its electronic properties and electrochemical behavior in PEMWE operation are observed. The electrode, fabricated through a facile strategy based on annealing in the air atmosphere, enhances the specific oxygen evolution reaction (OER) activity and stability in PEMWE operation. Furthermore, the electronic catalyst–substrate interactions associated with different reducibilities in the heteroatom system are studied. The morphology, electronic properties, and chemical state of the oxygen electrode are investigated through X-ray spectroscopy, microscopy techniques, and computational analyses. Thermal treatment of the catalyst-coated substrate decreases the bulk oxidation state of Ir and increases the surface oxidation state. According to the electrochemical and physical behavior analyses of PEMWEs, the oxygen content in the Ir oxide structure, which defines the OER activity and its stability, is influenced by the crystalline structure and formation of a stable interface between the catalyst and substrate. The outcomes can facilitate the development of strategies for enhancing the performance of PEMWEs and designing rational MEAs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

A Model Study of Substrate Effect on the Neutron-Scattering Spectra of Ferromagnetic Ordered Graphene

Graphene as a possible new magnetic material has stimulated research interest for application in spintronic devices. Pristine graphene does not show magnetism due to equivalence of the two sub-lattices of carbon atoms. It is predicted that impurity effects, substrate-induced gap, and defects, are expected to produce in-equivalence in two carbon sub-lattices leading to magnetism. The spins on the same sub-lattices are found to exhibit ferromagnetic order and spins of different sub-lattices are found to exhibit anti-ferromagnetic order. We consider here impurity and substrate effects as the cause of generation of magnetism in graphene. We report here a microscopic tight-binding study of frequency-dependent neutron scattering spectra for ferromagnetic ordering in the graphene systems. The tight-binding Hamiltonian consists of electron hoppings upto third nearest neighbors and substrate and impurity effects in the presence of Coulomb interaction of electrons separately at two in-equivalent A and B sub-lattices of graphene. We calculate the two-particle electron Green’s functions by using Zubarev’s Green’s function technique. The frequency-dependent scattering intensity of the system is computed numerically. The spectra displays a sharp peak at the neutron momentum transfer energy at low energies and another higher-energy peak appearing at substrate-induced gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Additive Manufacturing of Catalyst Substrates for Steam–Methane Reforming

Steam–methane reforming is a highly endothermic reaction, which is carried out at temperatures up to 1100 °C and pressures up to 3000 kPa, typically with a Ni-based catalyst distributed over a substrate of discrete alumina pellets or beads. Standard pellet geometries (spheres, hollow cylinders) limit the degree of mass transfer between gaseous reactants and catalyst. Further, heat is supplied to the exterior of the reactor wall, and heat transfer is limited due to the nature of point contacts between the reactor wall and the substrate pellets. This limits the degree to which the process can be intensified, as well as limiting the diameter of the reactor wall. Additive manufacturing now gives us the capability to design structures with tailored heat and mass transfer properties, not only within the packed bed of the reactor, but also at the interface between the reactor wall and the packed bed. In this work, the use of additive manufacturing to produce monolithic-structured catalyst substrate models, made from acrylonitrile–butadiene–styrene, with enhanced conductive heat transfer is described. By integrating the reactor wall into the catalyst substrate structure, the effective thermal conductivity increased by 34% from 0.122 to 0.164 W/(m K).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural and Mechanical Properties of Zr-Si-N Coatings Deposited by Arc Evaporation at Different Substrate Bias Voltages

ZrN and Zr-Si-N coatings were formed using vacuum-arc plasma fluxes deposition system at the substrate bias voltage (U{sub B}) ranged from − 50 to − 220 V on HS6-5-2 steel substrates. The structural, mechanical and tribological properties were characterized using x-ray diffraction, atomic force microscopy, scanning electron microscopy, optical microscopy, nanoindentation and ball-on-disk test. The surface roughness parameter Ra of ZrN coatings is lower than Zr-Si-N coatings. Both roughness Ra of Zr-Si-N coatings and the number of surface defects with mainly small dimensions to 1 µm decrease with increasing negative substrate bias voltage. The addition of silicon to ZrN significantly reduces the crystallite size, from about 18.3 nm for ZrN coating to 6.4 nm for Zr-Si-N coating both deposited at the same U{sub B} = − 100 V and 7.8 nm for U{sub B} = − 150 V. The hardness of Zr-Si-N coatings increases to about 30 GPa with the increase in negative substrate bias voltage (U{sub B} = − 220 V). Adhesion of the coatings tested is high, and critical load is above 80 N and reduces with U{sub B} increase. Coefficient of friction determined using AFM shows similar trend as surface roughness in microscale.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Wear and Corrosive Behaviors of Electroless Ni-LaCl{sub 3} Composites on Nanoporous ATO Surface of Ti Substrate

Ti and its alloys, because of its poor wear and oxidation resistance, have seriously restricted its industrial applications in the dry friction conditions. Herein we reported an easy-handling and effective approach for electroless Ni-LaCl{sub 3} nanocomposite films on nanoporous ATO surface of Ti substrate to modify its surface properties. Anodized titanium oxide, shorted as ATO, was designed as a template to deposit Ni-LaCl{sub 3} films on Ti surface with superior bonding interface. By adjusting the anodizing voltage from DC 60 to 240 V, the surface of ATO templates was manipulated to achieve a suitable diameter of nanopores using high voltage with low-current density state. The as-received Ni-LaCl{sub 3} film with a leaflike surface was successfully formed on to ATO surface. With an increase in LaCl{sub 3} addition from 0 to 4.0 g L{sup −1} in bath, results indicated that the diversified orientations of Ni crystals along Ni (111), (200), (220) and (311) were detected for Ni-LaCl{sub 3} films, rather than preferred directions of Ni (111) and (200) for pure Ni sample. As expected, the specific wear rate was ~ 10{sup −5} mm{sup 3} (N m){sup −1} for Ni-4.0 g L{sup −1} LaCl{sub 3} films, which was two times lower than that of the un-coated Ti substrate. Besides a lower microhardness of ~ 629 HV{sub 0.2} was detected for pure Ni, which was much lower that of ~ 752 HV{sub 0.2} for Ni-LaCl{sub 3} films, but higher than that of ~ 336 HV{sub 0.2} for Ti substrate. In addition, a superior corrosion resistance was obtained for Ni-LaCl{sub 3} composites relative to pure Ni, which was ascribed to the coexistence of La{sup 3+} ions and its La-rich insoluble products on its corroded surfaces for completing the pitting holes. In view of these, the as-deposited Ni-LaCl{sub 3} films on the surface of Ti substrate could guide an available proposal for surface modifying of Ti alloys against the wear corrosive failures, further intensifying their servicing life as subjected to harsh conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dual-Channel Enzymatic Inhibition Measurement (DEIM) Coupling Isotope Substrate via Matrix-Assisted Laser Desorption/Ionization Time of Flight Mass Spectrometry

A novel dual-channel enzymatic inhibition measurement (DEIM) method was developed to improve the repeatability with light/heavy isotope substrates, producing reliable relative standard deviations (< 3%) by employing acetylcholinesterase (AChE) as the model enzyme. The matrix-assisted laser desorption/ionization time of flight mass spectrometry (MALDI-TOF MS) was adapted for enzyme-inhibited method due to its good salt-tolerance and high throughput; meanwhile, dual-channel enzymatic reactions were performed to improve the repeatability of each well. The acetylcholinesterase inhibition measurement was conducted by mixing the quenched enzyme reaction solution of blank group (with heavy isotope as substrate) and experimental group (with light isotope as substrate), of which the inhibition rate might be affected by isotope effects. Hence, inverse study and Km measurement were implemented to validate the method. The inverse study shows similar inhibition rate (68.9 and 70.3%) and the Km of isotope substrates are analogous (0.139 and 0.135 mM), which demonstrated that the novel method is feasible to AChE inhibition measurement. Finally, the method was applied to herb extracts, half of which exhibit inhibition to AChE. The precise dual-channel enzymatic inhibition measurement (DEIM) method could be regarded as a promising approach to potential enzyme inhibitor screening. .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗