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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Room temperature ferromagnetism in conducting α-(In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} alloy films

We have studied electronic transport and magnetic properties of α-(In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} alloy films. Temperature dependence of resistivity of the films showed semiconducting behavior of conductivity. Room temperature ferromagnetism was observed. Relatively high coercive fields indicated that observed ferromagnetism in α-(In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} films were not arisen from magnetic metallic iron nano-precipitates. Remanence measurement revealed the Curie temperature of 520 K and 620 K for α-(In{sub 0.52}Fe{sub 0.48}){sub 2}O{sub 3} and α-(In{sub 0.23}Fe{sub 0.77}){sub 2}O{sub 3} films, corresponding to a weakening of superexchange interactions in these alloys (with less magnetic iron cations) with respect to canted antiferromagnet α-Fe{sub 2}O{sub 3}. Nevertheless, Curie temperatures remain much higher than 300 K, and semiconducting behavior with low activation energy in resistivity for middle composition alloy, exhibiting combined multi-functionality of room ferromagnetism and semiconducting properties, in corundum alloys such as α-(Ga{sub 1−x}Fe{sub x}){sub 2}O{sub 3} or α-Fe{sub 2−x}Ti{sub x}O{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I{sub d}-V{sub g} characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni{sub 0.36}Nb{sub 0.24}Zr{sub 0.40}){sub 90}H{sub 10} FETs were measured at a gate-drain bias voltage of 0–60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Advances in methods to obtain and characterise room temperature magnetic ZnO

We report the existence of magnetic order at room temperature in Li-doped ZnO microwires after low energy H{sup +} implantation. The microwires with diameters between 0.3 and 10 μm were prepared by a carbothermal process. We combine spectroscopy techniques to elucidate the influence of the electronic structure and local environment of Zn, O, and Li and their vacancies on the magnetic response. Ferromagnetism at room temperature is obtained only after implanting H{sup +} in Li-doped ZnO. The overall results indicate that low-energy proton implantation is an effective method to produce the necessary amount of stable Zn vacancies near the Li ions to trigger the magnetic order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Room temperature magnetic and dielectric properties of cobalt doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

CaCu{sub 3}Ti{sub 4−x}Co{sub x}O{sub 12} (x = 0, 0.2, 0.4) ceramics were prepared by a conventional solid state reaction, and the effects of cobalt doping on the room temperature magnetic and dielectric properties were investigated. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics. Scanning electron microscopy micrographs of Co-doped samples showed a striking change from regular polyhedral particle type in pure CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) to sheet-like grains with certain growth orientation. Undoped CaCu{sub 3}Ti{sub 4}O{sub 12} is well known for its colossal dielectric constant in a broad temperature and frequency range. The dielectric constant value was slightly changed by 5 at. % and 10 at. % Co doping, whereas the second relaxation process was clearly separated in low frequency region at room temperature. A multirelaxation mechanism was proposed to be the origin of the colossal dielectric constant. In addition, the permeability spectra measurements indicated Co-doped CCTO with good magnetic properties, showing the initial permeability (μ′) as high as 5.5 and low magnetic loss (μ″ < 0.2) below 3 MHz. And the interesting ferromagnetic superexchange coupling in Co-doped CaCu{sub 3}Ti{sub 4}O{sub 12} was discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Room temperature long range ferromagnetic ordering in Ni{sub 0.58}Zn{sub 0.42}Co{sub 0.10}Cu{sub 0.10}Fe{sub 1.8}O{sub 4} nano magnetic system

The structural and magnetic behavior of sol-gel autocombustion synthesized nanocrystalline Ni{sub 0.58}Zn{sub 0.42}Co{sub 0.10}Cu{sub 0.10}Fe{sub 1.8}O{sub 4} have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Mössbauer spectroscopy and vibrating sample magnetometer(VSM). Sample of high purity and high homogeneity was obtained by calcination at low temperature (500°C) resulting in nanoparticles of average diameter ∼15nm as determined by XRD and further confirmed by TEM. X-ray diffraction (XRD) and selective area diffraction (SAED) confirmed the single phase of the sample. Mössbauer results are supported by magnetization data. Well defined sextets and appearance of hysteresis at room temperature indicate the existence of ferromagnetic coupling at room temperature finding material utility in magnetic storage data. The existence of iron in ferric state confirmed by isomer shift is a clear evidence of improved magnetic properties of the present system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Giant volume magnetostriction in the Y{sub 2}Fe{sub 17} single crystal at room temperature

An investigation of the Y{sub 2}Fe{sub 17} compound belonging to the class of intermetallic alloys of rare-earth and 3d-transition metals is presented. The magnetization, magnetostriction, and thermal expansion of the Y{sub 2}Fe{sub 17} single crystal were studied. The forced magnetostriction and magnetostriction constants were investigated in the temperature range of the magnetic ordering close to the room temperature. The giant field induced volume magnetostriction was discovered in the room temperature region in the magnetic field up to 1.2 T. The contributions of both anisotropic single-ion and isotropic pair exchange interactions to the volume magnetostriction and magnetostriction constants were determined. The experimental results were interpreted within the framework of the Standard Theory of Magnetostriction and the Landau thermodynamic theory. It was found out that the giant values of the volume magnetostriction were caused by the strong dependence of the 3d-electron Coulomb charge repulsion on the deformations and width of the 3d-electron energy band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature

We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In{sub 0.15}Ga{sub 0.85}As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3 μm (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In{sub 0.15}Ga{sub 0.85}As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV is related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Frequency-dependent ferroelectric behavior of BaMn3Ti4O14.25 at room temperature

We report the activation field and selective frequency-dependent ferroelectric behavior of BaMn3Ti4O14.25 (BMT-134) at room temperature. BMT-134, a recently discovered multiferroic complex oxide, exhibits antiferromagnetic and ferroelectric behavior and belongs to the hollandite crystal class. The microstructure can be manipulated through processing conditions to prepare a nanocrystalline textured tablet. We measured polarization-electric field (P-E) hysteresis loops and strain-electric field butterfly loops as a function of frequency in order to investigate the AC dynamics of domain switching and strain behavior. Under an electric field loading condition, a clear hysteresis loop of the electric field-displacement curve is obtained at 50 Hz, indicating that room temperature ferroelectricity is attainable under the right processing conditions. When the frequency is increased to 500 Hz, the coercive field also increases, until the frequency reaches 5 kHz, at which point the electric field versus electric displacement becomes linear indicating the limit of domain switching at high frequency.

Hossain, Muhammad E.↗
DOE OSTI2015

Electric field-induced tuning of magnetism in PbFe{sub 0.5}Nb{sub 0.5}O{sub 3} at room temperature

We study the influence of electrical poling, carried out at room temperature, on the structure and magnetism of Pb(Fe{sub 0.5}Nb{sub 0.5})O{sub 3} by analyzing the differences observed in structural and magnetic properties before and after the electrical poling. The changes observed in magnetization of Pb(Fe{sub 0.5}Nb{sub 0.5})O{sub 3} before and after electrical poling exhibit considerably strong converse magnetoelectric effect at room temperature. In addition, the strengthening of Fe/Nb-O bond due to electrical poling is discussed on the basis of Raman spectral studies and analysis of neutron diffraction patterns. The potential tunability of magnetization with electrical poling can be an ideal tool for realization of application potential of this multiferroic material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO) band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μ{sub B}/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (T{sub C}) around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR) studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high T{sub C} and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optically induced strong intermodal coupling in mechanical resonators at room temperature

Strong parametric mode coupling in mechanical resonators is demonstrated at room temperature by using the photothermal effect in thin membrane structures. Thanks to the large stress modulation by laser irradiation, the coupling rate of the mechanical modes, defined as half of the mode splitting, reaches 2.94 kHz, which is an order of magnitude larger than electrically induced mode coupling. This large coupling rate exceeds the damping rates of the mechanical resonators and results in the strong coupling regime, which is a signature of coherent mode interaction. Room-temperature coherent mode coupling will enable us to manipulate mechanical motion at practical operation temperatures and provides a wide variety of applications of integrated mechanical systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy

We report the growth of high indium content InGaN:Yb nanorods grown on c-plane sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The in situ reflection high energy electron diffraction patterns recorded during and after the growth revealed crystalline nature of the nanorods. The nanorods were examined using electron microscopy and atomic force microscopy. The photoluminescence studies of the nanorods showed the visible emissions. The In composition was calculated from x-ray diffraction, x-ray photoelectron spectroscopy, and the photoluminescence spectroscopy. The In-concentration was obtained from photoluminescence using modified Vegard's law and found to be around 37% for InGaN and 38% for Yb (5 ± 1%)-doped InGaN with a bowing parameter b = 1.01 eV. The Yb-doped InGaN showed significant enhancement in photoluminescence properties compared to the undoped InGaN. The Yb-doped InGaN nanorods demonstrated the shifting of the photoluminescence band at room temperature, reducing luminescence amplitude temperature dependent fluctuation, and significant narrowing of excitonic emission band as compared to the undoped InGaN. The magnetic properties measured by superconducting quantum interference devices reveals room temperature ferromagnetism, which can be explained by the double exchange mechanism and magnetostriction.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser

Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The single mode emission is centered at 1059.4 cm{sup −1} (9.44 μm). A side mode suppression ratio of 43 dB was achieved. The laser exhibits a peak output power of 15 mW per facet at room temperature. The stable, single mode emission is observed within temperature tuning range, exhibiting shift at rate of 0.59 nm/K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Pt-functionalized reduced graphene oxide for excellent hydrogen sensing at room temperature

Cost effective and faster detection of H{sub 2} has always remained a challenge. We report synthesis of reduced graphene oxide (RGO)–Pt composite and its application as highly sensitive and selective H{sub 2} sensors at room temperature. Four samples by varying the ratio of RGO and Pt were prepared to test their sensing performance. The tests were carried out in inert (N{sub 2}) ambience as well as air ambience. It was observed that the RGO:Pt (1:3) 1 h reduced sample demonstrated the best H{sub 2} sensing performance in terms of sensitivity, response time, and recovery time at room temperature. Its response varied from ∼19% (200 ppm) to 57% (5000 ppm) against H{sub 2} in air ambience. Also, the response time and recovery time of the RGO:Pt (1:3) sample were found to be as fast as 65 s and 230 s against 5000 ppm, respectively, in air ambience. In N{sub 2} ambience, the RGO:Pt (1:3) sample demonstrated the best response of −97% (500 ppm), but its recovery was found to be poor. The RGO–Pt composite formation was verified by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The detailed physics behind the sensing mechanisms have been explained and experimentally verified in this work.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Improved room-temperature-selectivity between Nd and Fe in Nd recovery from Nd-Fe-B magnet

The sustainable society requires the recycling of rare metals. Rare earth Nd is one of rare metals, accompanying huge consumption especially in Nd-Fe-B magnets. Although the wet process using acid is in practical use in the in-plant recycle of sludge, higher selectivity between Nd and Fe at room temperature is desired. We have proposed a pretreatment of corrosion before the dissolution into HCl and the oxalic acid precipitation. The corrosion produces γ-FeOOH and a Nd hydroxide, which have high selectivity for HCl solution at room temperature. Nd can be recovered as Mn{sub 2}O{sub 3}-type Nd{sub 2}O{sub 3}. The estimated recovery-ratio of Nd reaches to 97%.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Room temperature strong light-matter coupling in three dimensional terahertz meta-atoms

We demonstrate strong light-matter coupling in three dimensional terahertz meta-atoms at room temperature. The intersubband transition of semiconductor quantum wells with a parabolic energy potential is strongly coupled to the confined circuital mode of three-dimensional split-ring metal-semiconductor-metal resonators that have an extreme sub-wavelength volume (λ/10). The frequency of these lumped-element resonators is controlled by the size and shape of the external antenna, while the interaction volume remains constant. This allows the resonance frequency to be swept across the intersubband transition and the anti-crossing characteristic of the strong light-matter coupling regime to be observed. The Rabi splitting, which is twice the Rabi frequency (2Ω{sub Rabi}), amounts to 20% of the bare transition at room temperature, and it increases to 28% at low-temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Near room temperature magnetodielectric consequence in (Li, Ti) doped NiO ceramic

In the quest for high-k dielectrics with decent magnetodielectric (MD) response, ball-milled processed (Li, Ti) doped NiO ceramics have been evaluated by various experimental techniques. Magnetic properties in these ceramics manifest with a pronounced anomaly appearing at ∼260 K, suggesting ferrimagnetic phase (related to cluster magnetism) and co-existence with a glassy-like antiferromagnetic phase at ∼7 K. Room temperature neutron diffraction pattern shows the existence of short-range magnetic correlations. In the magnetically ordered state below 250 K, the magnetic structure is found to be phase coexistence of G-type antiferromagnet and ferrimagnet. Impedance spectroscopy measurements over a wide temperature range can be perfectly described with appropriate microstructural model (internal barrier layer capacitor), based on domain and domain boundary relaxations, justifying the enhancement of the dielectric response. The low-temperature (T < 100 K) dielectric relaxation is polaronic in nature, associated with the charge ordering of a mixed valence states of Ti ions (co-existence of Ti{sup 3+} and Ti{sup 4+}). Finally, our investigations in external magnetic fields up to 15 T reveal the occurrence of negative MD effect near room temperature. This intriguing intrinsic feature has been understood by the mechanism of charge-hopping-mediated MD effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗