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At least 559 records · Page 31

Frequencies of solar p-mode oscillations

A list is presented of frequencies that can be used as a basis for helioseismic investigations of the average structure of the solar interior as a function of depth. The list includes measurements of frequencies of p-mode multiplets covering the l range from 4 to 99. Two different data sets are employed: one based on Doppler shift measurements made in 1985 at the Big Bear Solar Observatory and another based on intensity measurements made in 1981 at the geographic South Pole. Frequencies from the two data sets are compared, and systematic frequency differences are found that range from less than 0.1 microHz at low values of l to about 0.6 microHz at l = 99; the uncertainty is + or - 0.1 microHz.

Duvall, T. L., Jr.↗

Characterization and modelling of open tube diffused n+p bulk InP solar cells

The authors describe the photovoltaic characteristics of an n+p junction solar cell fabricated on bulk InP by an open-tube-diffusion technique. Analysis of the forward characteristics shows that the forward current is dominated by recombination in the quasineutral regions, indicating that the fabrication technique produces a clean junction. Spectral response measurements are analyzed and more realistic boundary conditions are used to model the solar cell to determine important material and device parameters.

Bothra, S.↗

Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

Larsson, Anders↗

Initial high-degree p-mode frequency splittings from the 1988 Mt. Wilson 60-foot Tower Solar Oscillation Program

The initial frequency splitting results of solar p-mode oscillations obtained from the 1988 helioseismology program at the Mt. Wilson Observatory are presented. The frequency splittings correspond to the rotational splittings of sectoral harmonics which range in degree between 10 and 598. They were obtained from a cross-correlation analysis of the prograde and retrograde portions of a two-dimensional (t - v) power spectrum. This power spectrum was computed from an eight-hour sequence of full-disk Dopplergrams obtained on July 2, 1988, at the 60-foot tower telescope with a Na magneto-optical filter and a 1024x1024 pixel CCD camera. These frequency splittings have an inherently larger scatter than did the splittings obtained from earlier 16-day power spectra. These splittings are consistent with an internal solar rotational velocity which is independent of radius along the equatorial plane. The normalized frequency splittings averaged 449 + or - 3 nHz, a value which is very close to the observed equatorial rotation rate of the photospheric gas of 451.7 nHz.

Rhodes, Edward J., Jr.↗

Effect of orbital and rotational angular momentum averaging on branching ratios of dynamical resonances in the reaction H + p-H2 yields o-H2 + H

The paper reports extensive quantum mechanical calculations of the product vibrational branching ratios in the reaction H + p-H2 yields o-H2 + H. The calculations involve total angular momentum up to 2 and excited as well as ground initial rotational states, and they are completely converged with up to 513 channels in individual total angular momentum/parity blocks. Comparisons are made with recent experiments by Nieh and Valentini.

Mladenovic, Mirjana↗

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

Law, K.-K.↗

A study of physical properties of ODPA-p-PDA polyimide films

Physical properties were investigated of ODPA-p-PDA polyimide films, including their lower molecular weight versions with phthalimide endcaps. Free volume, determined by low energy positron annihilation in the test films, was the major parameter of interest since all other physical properties are ostensibly related to it. It affects the dielectric constant as well as the saturation moisture pickup of the test films. An empirical relation was developed between the free volume and molecular weight of the test films, comparable to the Mark-Houwink relation between the polymer solution viscosity and the molecular weight. Development of such a relation constitutes a unique achievement since it enables researchers to estimate the molecular weight of an intractable polymer in solid state for the first time.

Singh, Jag J.↗

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

Coutts, T. J.↗

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

Gessert, T. A.↗

Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Draper, S. L.↗

Reflecting boundary conditions for graded p-n junctions

In a graded junction, the formalism for handling reflecting boundary conditions must be modified. Since a significant drift term is present, zero recombination velocity at the surface does not imply a zero excess carrier gradient but rather zero overall flux. A model for analyzing p-n junctions fabricated by implantation or diffusion is presented, assuming the dominant recombination mechanism in the graded region is Auger. The model enables optimization of diode design. By proper selection of parameters, mainly by reducing surface concentration or by increasing the steepness of the dopant profile, it is possible to drastically reduce the saturation current generated by the graded region.

Schacham, S. E.↗

Complex-coordinate calculation of (1,3)P resonances in Ps(-) using Hylleraas functions

An accurate calculation for (1,3)P autodetaching resonances in Ps(-) has been carried out using the complex-rotation method, which has the advantage of giving resonance position and width at the same time. The wave function is of the Hylleraas type with an available number of terms up to 1140. One 1P and two 3P resonances below the n = 2 threshold and two 1P and two 3P resonances below the n = 3 threshold of the positronium atom. Resonance parameters are compared with those obtained from scattering and adiabatic calculations where available.

Bhatia, A. K.↗

Hierarchic plate and shell models based on p-extension

Formulation of hierarchic sequences of finite element models for beams, arches, plates and shells based on the principle of virtual work is described. The exact solutions corresponding to models in the hierarchic sequence converge to the exact solution of the fully three-dimensional problem of linear elasticity. The stopping criterion is that the functionals of interest must be substantially independent of the choice of the model. This process is closely related to p-extensions. Aspects of implementation are discussed in connection with axisymmetric shells and an example is presented. An application of superconvergent extraction methods for the computation of stress resultants is demonstrated.

Szabo, B. A.↗

Iso-chemical potential trajectories in the P-T plane for He II

Trajectories of constant chemical potential in the P-T plane serve as an integral formulation of London's equation. The trajectories are useful for analysis and synthesis of fountain effect pump performance. A family of trajectories is generated from available numerical codes.

Maytal, B.↗

Surface and implantation effects on p-n junctions

The contribution of the graded region of implanted p-n junctions is analyzed using an exponential profile. Though previously neglected, it was recently shown that this contribution to the saturation current of HgCdTe diodes is significant. Assuming a dominant Auger recombination, an analytical solution to the continuity equation is obtained. An expression for the current generation by the graded region is presented for both ohmic and reflecting boundary conditions. A revised condition for a wide region is derived. When the region is narrow, the current differs drastically from that of the zero-gradient case. The effects of the junction depth and the substrate and surface concentrations on the current are investigated. It is shown that the reverse current does not saturate.

Schacham, Samuel E.↗

Surface electrons in inverted layers of p-HgCdTe

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Schacham, Samuel E.↗

SATCOM antenna siting study on a P-3C using the NEC-BSC V3.1

The location of a UHF SATCOM antenna on a P-3C aircraft is studied using the NEC-Basic Scattering Code V3.1 (NEC-BSC3). The NEC-BSC3 is a computer code based on the uniform theory of diffraction. The code is first validated for this application using scale model measurements. In general, the comparisons are good except in 10 degree regions near the nose and tail of the aircraft. Patterns for various antenna locations are analyzed to achieve a prescripted performance.

Bensman, D.↗