Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope
The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 10{sup 7 }A cm{sup −2 }sr{sup −1} for a 30-keV beam energy with the polarization of 82%, which corresponds to 3.1 × 10{sup 8 }A cm{sup −2 }sr{sup −1} for a 200-keV beam energy. The resulting electron beam exhibited a long coherence length at the specimen position due to the high parallelism of (1.7 ± 0.3) × 10{sup −5 }rad, which generated interference fringes representative of a first-order correlation using an electron biprism. The beam also had a high degeneracy of electron wavepacket of 4 × 10{sup −6}. Due to the high polarization, the high degeneracy and the long coherence length, the spin-polarized electron beam can enhance the antibunching effect.