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At least 559 records · Page 31

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Polarization rotation in a ferroelectric BaTiO$_3$ film through low-energy He-implantation

Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$_3$ thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film's top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method's compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.

Luo, Liang [Ames Laboratory (AMES), Ames, IA (Unit↗

DOE OSTI2013

2012 Electrodeposition Gordon Research Conference and Gordon Research Seminar, July 29 - August 3, 2012

The 2012 Gordon Conference on Electrodeposition: Electrochemical Materials Synthesis and Applications will present cutting-edge research on electrodeposition with emphasis on (i) advances in basic science, (ii) developments in next-generation technologies, and (iii) new and emerging areas. The Conference will feature a wide range of topics, from atomic scale processes, nucleation and growth, thin film deposition, and electrocrystallization, to applications of electrodeposition in devices including microelectronics, batteries, solar energy, and fuel cells.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Encapsulation methods for organic electrical devices

The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Encapsulation methods and dielectric layers for organic electrical devices

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Synthetic thermoelectric materials comprising phononic crystals

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Process Development for Nanostructured Photovoltaics

Photovoltaic manufacturing is an emerging industry that promises a carbon-free, nearly limitless source of energy for our nation. However, the high-temperature manufacturing processes used for conventional silicon-based photovoltaics are extremely energy-intensive and expensive. This high cost imposes a critical barrier to the widespread implementation of photovoltaic technology. Argonne National Laboratory and its partners recently invented new methods for manufacturing nanostructured photovoltaic devices that allow dramatic savings in materials, process energy, and cost. These methods are based on atomic layer deposition, a thin film synthesis technique that has been commercialized for the mass production of semiconductor microelectronics. The goal of this project was to develop these low-cost fabrication methods for the high efficiency production of nanostructured photovoltaics, and to demonstrate these methods in solar cell manufacturing. We achieved this goal in two ways: 1) we demonstrated the benefits of these coatings in the laboratory by scaling-up the fabrication of low-cost dye sensitized solar cells; 2) we used our coating technology to reduce the manufacturing cost of solar cells under development by our industrial partners.

14 SOLAR ENERGY↗

DOE OSTI2015

SINGLE EVENT EFFECTS TEST FACILITY AT OAK RIDGE NATIONAL LABORATORY

Increasing use of microelectronics of ever diminishing feature size in avionics systems has led to a growing Single Event Effects (SEE) susceptibility arising from the highly ionizing interactions of cosmic rays and solar particles. Single event effects caused by atmospheric radiation have been recognized in recent years as a design issue for avionics equipment and systems. To ensure a system meets all its safety and reliability requirements, SEE induced upsets and potential system failures need to be considered, including testing of the components and systems in a neutron beam. Testing of ICs and systems for use in radiation environments requires the utilization of highly advanced laboratory facilities that can run evaluations on microcircuits for the effects of radiation. This paper provides a background of the atmospheric radiation phenomenon and the resulting single event effects, including single event upset (SEU) and latch up conditions. A study investigating requirements for future single event effect irradiation test facilities and developing options at the Spallation Neutron Source (SNS) is summarized. The relatively new SNS with its 1.0 GeV proton beam, typical operation of 5000 h per year, expertise in spallation neutron sources, user program infrastructure, and decades of useful life ahead is well suited for hosting a world-class SEE test facility in North America. Emphasis was put on testing of large avionics systems while still providing tunable high flux irradiation conditions for component tests. Makers of ground-based systems would also be served well by these facilities. Three options are described; the most capable, flexible, and highest-test-capacity option is a new stand-alone target station using about one kW of proton beam power on a gas-cooled tungsten target, with dual test enclosures. Less expensive options are also described.

atmospheric radiation↗

DOE OSTI2016

Depositing bulk or micro-scale electrodes

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Introduction to Photovoltaics Failure Analysis and Reliability.

Photovoltaics (PV) are becoming an increasingly important solution to meet the demand for renewable energy. The rapid growth and adoption of this technology means that microelectronics failure analysis and reliability experts may be called upon to address current and future challenges. The article here provides a brief primer on common failure mechanisms found in PV component devices, as well as the associated failure analysis techniques to identify them.

14 SOLAR ENERGY↗

DOE OSTI2017

Probing low noise at the MOS interface with a spin-orbit qubit.

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28 Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems

Jock, Ryan Michael↗

DOE OSTI2018

Zeolite nanosheet membrane

Oxide materials, thin films, coatings, and methods of preparing the same are disclosed herein. In certain embodiments the oxide material can have an MWW type framework or an MFI type framework. In one embodiment, the method includes: providing a suspension of an exfoliated layered oxide material in a solvent; and filtering the suspension through a porous support to provide a film of the oxide material, optionally directly on the porous support. Secondary grown films of the oxide material and methods of preparing the same are also provided. Thin zeolite films are attractive for a wide range of applications including molecular sieve membranes and catalytic membrane reactors, permeation barriers, low dielectric constant materials for microelectronics and sensor components for selective sensing.

Tsapatsis, Michael↗

DOE OSTI2018

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

We report that nanocomposite coatings, comprised of a precisely blended mixture of components, have diverse applications in microelectronics, optics, sensors, and solid-state detectors. By varying the composition of the mixture, the electrical, optical, and physical properties of the coatings can be “tuned” over almost the full range of the individual components, and can sometimes yield properties distinct from those of any of the constituents. There are many techniques for producing nanocomposite coatings, but atomic layer deposition (ALD) is particularly well suited for controlling the properties of the fabricated coatings. ALD uses alternating cycles of gaseous precursors to a solid surface to deposit materials in an atomic layer-by-layer fashion. Because a chemical reaction on the surface naturally terminates when the surface functional groups are all reacted, the amount of material deposited in one ALD cycle is easily controlled. This self-limiting property, coupled with facile diffusion of the precursor vapors into narrow pores and voids, allows complex, 3-dimensional substrates to be coated with excellent uniformity and conformality. ALD can be used to deposit a wide variety of materials including metal oxides, nitrides, sulfides, and even pure elements. By alternating between two materials (e.g., a metal and a metal oxide), we can synthesize complex nanocomposite coatings. Lastly, the thickness of the coating is controlled by the total number of ALD cycles performed, and the composition is controlled by the ratio of the ALD cycles executed for each of the two components.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Thermally managed LED arrays assembled by printing

Provided herein are electronic devices including arrays of printable light emitting diodes (LEDs) having device geometries and dimensions providing enhanced thermal management and control relative to conventional LED-based lighting systems. The systems and methods described provide large area, transparent, and/or flexible LED arrays useful for a range of applications in microelectronics, including display and lightning technology. Methods are also provided for assembling and using electronic devices including thermally managed arrays of printable light emitting diodes (LEDs).

Rogers, John A.↗

DOE OSTI2019

Depositing bulk or micro-scale electrodes

36 MATERIALS SCIENCE↗

DOE OSTI2019

Ion-implanted thermal barrier

Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.

42 ENGINEERING↗

DOE OSTI2020

Examination of Solvent- Room Temperature Ionic Liquid Interactions using 2D NMR and Computational Chemistry

Rare earth metals (REMs) are the key functioning material found in microelectronics, advanced batteries, and high-efficiency electrical motors. Current methods for producing REMs require high temperatures (i.e. energy intensive) and produce an abundance of hazardous fluoride waste. Room temperature ionic liquids (RTILs) are an ideal alternative electrolyte because they allow for a low-temperature, energy-efficient electrochemical process. RTIL properties such as viscosity and conductivity determine how effective they can be in this process. Since viscosity is directly related to both intra and intermolecular forces, this study sets out to investigate two RTILs-Trihexyltetradecylphosphonium dicyanamide (Cyphos 105) and Trihexyltetradecylphosphonium bistrifimide (Cyphos 109) and their interactions. Results from 2-dimensional nuclear magnetic resonance (2D NMR) spectroscopy show that there is an interaction between the tetradecyl tail and the phosphorus atom of the Cyphos RTIL. In order to establish whether this is an intra or an inter-molecular interaction, DFT-based computational calculations were performed to determine the optimized geometry. Calculations were done both in the gas phase and with propylene carbonate as an augmenting solvent. Preliminary results show that there is minimal intramolecular interaction between the tetradecyl tail and the phosphorus atom of the RTILs, and that the interaction seen in the 2D NMR experiment is likely of an intermolecular nature instead.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Smart sensors using artificial intelligence for on-detector electronics and ASICs

Cutting edge detectors push sensing technology by further improving spatial and temporal resolution, increasing detector area and volume, and generally reducing backgrounds and noise. This has led to a explosion of more and more data being generated in next-generation experiments. Therefore, the need for near-sensor, at the data source, processing with more powerful algorithms is becoming increasingly important to more efficiently capture the right experimental data, reduce downstream system complexity, and enable faster and lower-power feedback loops. In this paper, we discuss the motivations and potential applications for on-detector AI. Furthermore, the unique requirements of particle physics can uniquely drive the development of novel AI hardware and design tools. We describe existing modern work for particle physics in this area. Finally, we outline a number of areas of opportunity where we can advance machine learning techniques, codesign workflows, and future microelectronics technologies which will accelerate design, performance, and implementations for next generation experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Ultramicro to mesopore frameworks for selective separation and storage of noble gases

Methods and materials for the selective capture and storage of preselected materials from gas streams using metal organic framework (MOF) materials are described. In various embodiments preselected target material gases could include noble gasses such as Kr, Xe, Rn, Arultramicro to mesopore frameworks for selective separation and storage of noble gases, other gasses such as I2 or other particular isotopes either naturally occurring or man-made, or another preselected gas capture material such as a target material for legal, regulatory or treaty compliance, or a preselected material from a particular process such as a cleaning or etching agent from semiconducting or microelectronic manufacture, or a portion of an anesthetic gas such as nitrous oxide, isoflurane, sevoflurane or a fluorinated ethers.

Thallapally, Praveen K.↗