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At least 559 records · Page 31

Ultra-high quality factors in superconducting niobium cavities in ambient magnetic fields up to 190 mG

Ambient magnetic field, if trapped in the penetration depth, leads to the residual resistance and therefore sets the limit for the achievable quality factors in superconducting niobium resonators for particle accelerators. Here, we show that a complete expulsion of the magnetic flux can be performed and leads to: (1) record quality factors Q > 2 × 10{sup 11} up to accelerating gradient of 22 MV/m; (2) Q ∼ 3 × 10{sup 10} at 2 K and 16 MV/m in up to 190 mG magnetic fields. This is achieved by large thermal gradients at the normal/superconducting phase front during the cooldown. Our findings open up a way to ultra-high quality factors at low temperatures and show an alternative to the sophisticated magnetic shielding implemented in modern superconducting accelerators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnets, Magnets, Magnets!

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75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗

In-situ magnetic alignment model for additive manufacturing of anisotropic bonded magnets

In this work, we report a mathematical framework which predicts the degree of alignment (DoA) in an in-situ aligned additively manufactured 3D printed bonded magnets. A multiphysics model is developed which couples the harmonious interactions of magnetic particles in a viscous flowing polymer under the presence of an external magnetic field. The hydrodynamic fluid-particle interaction is paired with the magnetophoretic force to predict the particle trajectory and distribution during extrusion through a 3D printer nozzle. Succeeding the force balance, a magnetohydrodynamic torque equilibrium analysis is performed to predict the net-orientation of the magnetic particles as a function of the applied field strength, viscous forces, and particle-to-particle interactions (P2P). Experimental validation of the DoA predictions is performed using 65 vol% Nd-Fe-B+Sm-Fe-N in Nylon12 (DoA exp = 0.620 and DoA theory = 0.686) and 15 vol% Sm-Co in PLA (DoA exp = 0.830 and DoA theory = 0.863). A parametric analysis is performed to analyze the effect of operating and design parameters like alignment field strength, magnetic loading fraction, extrusion load, and particle size. The model predicts a competing behavior between particle-fluid and particle-particle interactions under the presence of an applied field. Lastly, the model provides a framework to efficiently predict the DoA in tandem with a functionalized-magnetic 3D printer and allows the user to adjust the operating parameters according to the desired DoA.

36 MATERIALS SCIENCE↗