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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Infrared studies of the evolution of the C{sub i}O{sub i}(Si{sub I}) defect in irradiated Si upon isothermal anneals

Carbon-oxygen-self-interstitial complexes were investigated in silicon by means of Fourier transform infrared spectroscopy. Upon irradiation, the C{sub i}O{sub i} defect (C{sub 3}) forms which for high doses attract self-interstitials (Si{sub I}s) leading to the formation of the C{sub i}O{sub i}(Si{sub I}) defect (C{sub 4}) with two well-known related bands at 939.6 and 1024 cm{sup −1}. The bands are detectable in the spectra both in room temperature (RT) and liquid helium (LH) temperature. Upon annealing at 150 °C, these bands were transformed to three bands at 725, 952, and 973 cm{sup −1}, detectable only at LH temperatures. Upon annealing at 220 °C, these bands were transformed to three bands at 951, 969.5, and 977 cm{sup −1}, detectable both at RT and LH temperatures. Annealing at 280 °C resulted in the transformation of these bands to two new bands at 973 and 1024 cm{sup −1}. The latter bands disappear from the spectra upon annealing at 315 °C without the emergence of other bands in the spectra. Considering reaction kinetics and defect metastability, we developed a model to describe the experimental results. Annealing at 150 °C triggers the capturing of Si{sub I}s by the C{sub 4} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 2} complex. The latter structure appears to be bistable: measuring at LH, the defect is in configuration C{sub i}O{sub i}(Si{sub I}){sub 2} giving rise to the bands at 725, 952, and 973 cm{sup −1}, whereas on measurements at RT, the defect converts to another configuration C{sub i}O{sub i}(Si{sub I}){sub 2}{sup *} without detectable bands in the spectra. Possible structures of the two C{sub i}O{sub i}(Si{sub I}){sub 2} configurations are considered and discussed. Upon annealing at 220 °C, additional Si{sub I}s are captured by the C{sub i}O{sub i}(Si{sub I}){sub 2} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 3} complex, which in turn on annealing at 280 °C converts to the C{sub i}O{sub i}(Si{sub I}){sub 4} complex. The latter defect anneals out at 315 °C, without being accompanied in the spectra by the growth of new bands.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Zn precipitation and Li depletion in Zn implanted ZnO

Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 10{sup 15} cm{sup −2} and 1 × 10{sup 17} cm{sup −2}. Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60 μm. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Local cation ordering in compositionally complex Ruddlesden–Popper n = 1 oxides

The Ruddlesden–Popper (RP) layered perovskite structure is of great interest due to its inherent tunability, and the emergence and growth of the compositionally complex oxide (CCO) concept endows the RP family with further possibilities. Here, a comprehensive assessment of thermodynamic stabilization, local order/disorder, and lattice distortion was performed in the first two reported examples of lanthanum-deficient La n+1 B n O 3n+1 (n = 1, B = Mg, Co, Ni, Cu, Zn) obtained via various processing conditions. Chemical short-range order (CSRO) at the B-site and the controllable excess interstitial oxygen (δ) in RP-CCOs are uncovered by neutron pair distribution function analysis. Reverse Monte Carlo analysis of the data, Metropolis Monte Carlo simulations, and extended x-ray absorption fine structure analysis implies a modest degree of magnetic element segregation on the local scale. Further, ab initio molecular dynamics simulations results obtained from special quasirandom structure disagree with experimentally observed CSRO but confirm Jahn–Teller distortion of CuO 6 octahedra. These findings highlight potential opportunities to control local order/disorder and excess interstitial oxygen in layered RP-CCOs and demonstrate a high degree of freedom for tailoring application-specific properties. They also suggest a need for expansion of theoretical and data modeling approaches in order to meet the innate challenges of CCO and related high-entropy phases.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dynamical defects in a two-dimensional Wigner crystal: Self-doping and kinetic magnetism

We study the quantum dynamics of interstitials and vacancies in a two-dimensional Wigner crystal (WC) using a semi-classical instanton method that is asymptotically exact at low density, i.e., in the r s → ∞ limit. Here, the dynamics of these point defects mediates magnetism with much higher energy scales than the exchange energies of the pure WC. Via exact diagonalization of the derived effective Hamiltonians in the single-defect sectors, we find the dynamical corrections to the defect energies. The resulting expression for the interstitial (vacancy) energy extrapolates to 0 at r s = r mit ≈ 70 (r s ≈ 30), suggestive of a self-doping instability to a partially melted WC for some range of r s below r mit . We thus propose a “metallic electron crystal” phase of the two-dimensional electron gas at intermediate densities between a low density insulating WC and a high density Fermi fluid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ab initio prediction of FeCr sigma (001)/FCC Fe(111) interfacial energy: Effect of interfacial doping of C, B, and N

Interfacial energy plays a crucial role for high-temperature material systems in determining their microstructure evolution and mechanical properties. Optimizing the interfacial energy through doping can improve the stability, performance, and overall functionality of these materials. Here, the present study delivers theoretical investigation on the sigma FeCr (001)//FCC Fe (111) interfacial energy using ab initio methods, focusing on the implications of interfacial doping with important interstitial elements carbon (C), boron (B), and nitrogen (N). The calculated interfacial energy without doping is 0.183J/m 2 . Upon doping, notable reductions in interfacial energy were observed. Doping with B decreased the interfacial energy to 0.046J/m 2 , with single C doping to 0.126J/m 2 , with two C doping to 0.098J/m 2 , and with a single N doping to 0.071J/m 2 . These findings not only shed light on the atomistic origin for the effect of stabilizing the microstructure of stainless steel at elevated temperatures by interstitial doping, but also present a systematic, thorough ab initio approach to predict interfacial doping properties and guide alloy design to enhance the performance and stability.

FeCr sigma phase↗
DOE OSTI2016

Bismuth incorporation into gallium phosphide

Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 degrees C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

14 SOLAR ENERGY↗
DOE OSTI2018

The Structure of Radiative Tunnel Recombination Sites in Emulsion Microcrystals of AgBr(I)

To identify the structure of emissive tunnel recombination sites in the emulsion microcrystals of silver bromide AgBr(I) with iodine contaminations and to determine the role of an emulsion medium in their formation, the temperature dependence of the luminescence spectra in the range from 77 to 120 K, the kinetics of the growth of the maximum luminescence intensity value at λ ≈ 560 nm, and the luminescence flash spectrum stimulated by the infrared light are investigated. Two types of the AgBr{sub 1–} {sub x}(I{sub x}) (x = 0.03) microcrystals—namely, obtained in an aqueous solution and on a gelatin substrate—are used in the studies. It is established that the emissive tunnel recombination sites with a luminescence maximum at λ ≈ 560 nm in AgBr{sub 1–} {sub x}(I{sub x}) (x = 0.03) are the {(I_a"-I_a"-)Ag_i"+} donor–acceptor complexes with the I{sub a}{sup -} iodine ions located in neighbor anionic sites of the AgBr(I) crystal lattice, next to which the Ag{sub i}{sup +} interstitial silver ion is positioned. With an increase in the temperature, the {(I_a"-I_a"-)Ag_i"+} sites undergo structural transformation into the {(I_a"-I_a"-)Ag_i_n"+} sites, where n = 2, 3, …. Moreover, the {(I_a"-I_a"-)Ag_i_n"+} sites (n = 2) after the capture of an electron and hole also provide the tunnel recombination with a luminescence maximum at λ ≈ 720 nm. The influence of an emulsion medium consists in that gelatin interacts with the surface electron-localization sites, i.e., the interstitial silver ions Ag{sub in}{sup +}, n = 1, 2, and forms the complexes {Ag_i_n"0 G"+} (n = 1, 2) with them. The latter are deeper electron traps with a small capture cross section as compared to the Ag{sub in}{sup +} sites (n = 1, 2) and that manifest themselves in that the kinetics of the luminescence growth in AgBr(I) to a stationary level at λ ≈ 560 nm is characterized by the presence of “flash firing.” At the same time, the luminescence flash stimulated by IR light, for which the Ag{sub in}{sup +}(n = 1, 2) electron-localization sites are responsible, is absent. It is supposed that the electrons localized on the {Ag_i_n"+G"+} complexes (n = 2) retain the capability for emissive tunnel recombination with holes localized on paired iodine sites with a luminescence maximum at λ ≈ 750 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Structure of Nd{sub 5}Mo{sub 3}O{sub 16+δ} Single Crystals Doped with Tungsten

The structure of tungsten-doped Nd{sub 5}Mo{sub 3}O{sub 16+δ} single crystals has been investigated by X-ray diffraction analysis, energy-dispersive X-ray spectroscopy (EDXS) microanalysis, and extended X-ray absorption fine-structure (EXAFS) spectroscopy. Tungsten atom, which partially replaces molybdenum atoms in the structure, is found to be located close (at a distance of 0.57 Å) to the Mo atom site. The interstitial oxygen atom О3 shifts from the crystallographic site with coordinates (0.5, 0.5, 0) to the site with coordinates (0.43, 0.48, 0.04) and complements the tungsten coordination to octahedral. The decrease in the unit-cell parameter and conductivity with an increase in the tungsten concentration in the sample is shown to be related to the fact that the interstitial oxygen atom О3 (responsible for conductivity) is in the coordination environment of tungsten atom.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The influence of defects on magnetic properties of fcc-Pu

The influence of vacancies and interstitial atoms on magnetism in Pu is considered in the framework of the density functional theory. The crystal structure relaxation arising due to various types of defects is calculated using the molecular dynamics method with a modified embedded atom model. The local density approximation with explicit inclusion of Coulomb and spin-orbit interactions is applied in matrix invariant form to describe correlation effects in Pu with these types of defects. The calculations show that both vacancies and interstitials give rise to local moments in the f-shell of Pu in good agreement with experimental data for aged Pu. Magnetism appears due to the destruction of a delicate balance between spin-orbit and exchange interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Dynamics and Stability of Subsonic Crowdion Clusters in 2D Morse Crystal

Recently, the concept of supersonic N-crowdions was offered. In molecular dynamics simulations, they can be excited by initial kick of N neighboring atoms located in one close-packed atomic row along this row. In the present study, in 2D Morse crystal, we apply initial kick to M neighboring atoms located in neighboring close-packed atomic rows along these rows. This way, we initiate crowdion clusters called subsonic M-crowdions. It is well known that static 1-crowdion in 2D Morse lattice is unstable; as a result, the interstitial atom leaves the close-packed atomic row and becomes immobile. However, we show that 1-crowdion moving with sufficiently large subsonic velocity remains in the close-packed atomic row. Crowdion clusters with M equal to or greater than 2 appear to be stable even at rest, with growing M transforming into prismatic dislocation loops. It is important to note that stable subsonic M-crowdions (M > 1) remain mobile and they can carry interstitial atoms over long distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a similar concentration of ~6 × 10{sup 14} cm{sup –3} dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mg{sub i}) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole–Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Electron Transfer between Different Lanthanide Centers in BaF{sub 2} Crystals—Part II: Transfer Mechanisms

Processes of photo-induced electron transfer from a bivalent acceptor lanthanide (Eu, Sm, and Yb) onto a trivalent donor lanthanide (Nd, Sm, Dy, Tm, and Yb) and the inverse thermally activated transfer are studied in barium fluoride crystals. At room temperature, photoinduced electron transfer is accompanied by oncoming displacement of the interstitial charge-compensating fluoride ion. On photoquenching at low temperatures, a bivalent donor lanthanide remains next to the interstitial fluoride ion, which causes a redshift of its 4f–5d absorption bands. The shift increases as the lanthanide size decreases (as in the series Nd, Sm, Dy, Tm, and Yb). A detailed analysis of the mechanisms of photo and thermal electron transfers between the different lanthanide centers in BaF{sub 2} crystals is provided.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Defecton Contribution to the High-Temperature Superconductivity of Hydrides

Formation of high-temperature superconducting phases of some hydrides requires high pressure (several hundred gigapascals), which causes lattice compression and, correspondingly, exponential increase in the probability of hydrogen-atom tunneling between equivalent interstitial sites. At low temperatures, vacancies in the hydrogen sublattice (occupied under stoichiometric conditions) and hydrogen atoms in the interstitial sublattice (absolutely vacant under stoichiometric conditions) are quantum defects (defectons). The defecton contribution to the superconductivity of hydrides has been estimated. It is shown that this contribution can be large both for free defectons and defectons clusterized with formation of two-level systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modeling investigation of the stability and irradiation-induced evolution of nanoscale precipitates in advanced structural materials

Materials used in extremely hostile environment such as nuclear reactors are subject to a high flux of neutron irradiation, and thus vast concentrations of vacancy and interstitial point defects are produced because of collisions of energetic neutrons with host lattice atoms. The fate of these defects depends on various reaction mechanisms which occur immediately following the displacement cascade evolution and during the longer-time kinetically dominated evolution such as annihilation, recombination, clustering or trapping at sinks of vacancies, interstitials and their clusters. The long-range diffusional transport and evolution of point defects and self-defect clusters drive a microstructural and microchemical evolution that are known to produce degradation of mechanical properties including the creep rate, yield strength, ductility, or fracture toughness, and correspondingly affect material serviceability and lifetimes in nuclear applications. Therefore, a detailed understanding of microstructural evolution in materials at different time and length scales is of significant importance. The primary objective of this work is to utilize a hierarchical computational modeling approach i) to evaluate the potential for nanoscale precipitates to enhance point defect recombination rates and thereby the self-healing ability of advanced structural materials, and ii) to evaluate the stability and irradiation-induced evolution of such nanoscale precipitates resulting from enhanced point defect transport to and annihilation at precipitate interfaces. This project will utilize, and as necessary develop, computational materials modeling techniques within a hierarchical computational modeling approach, principally including molecular dynamics, kinetic Monte Carlo and spatially-dependent cluster dynamics modeling, to identify and understand the most important physical processes relevant to promoting the “selfhealing” or radiation resistance in advanced materials containing nanoscale precipitates. In particular, the interfacial structure of embedded nanoscale precipitates will be evaluated by electronic- and atomic-scale modeling methods, and the efficiency of the validated interfaces for trapping point defects will next be evaluated by atomic-scale modeling (e.g., determining the sink strength of the precipitates), addressing key questions related to the optimal interface characteristics to attract point defects and enhance their recombination. Kinetic models will also be developed to simulate microstructural evolution of the nanoscale features and irradiation produced defect clusters, and compared with observed microstructural changes.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Uncertainty Quantification and Management for Multi-scale Nuclear Materials Modeling

Understanding and improving microstructural mechanical stability in metals and alloys is central to the development of high strength and high ductility materials for cladding and cores structures in advanced fast reactors. Design and enhancement of radiation-induced damage tolerant alloys are facilitated by better understanding the connection of various unit processes to collective responses in a multiscale model chain, including: dislocation nucleation, absorption and desorption at interfaces; vacancy production, radiation-induced segregation of Cr and Ni at defect clusters (point defect sinks) in BCC Fe-Cr ferritic/martensitic steels; investigation of interaction of interstitials and vacancies with impurities (V, Nb, Ta, Mo, W, Al, Si, P, S); time evolution of swelling (cluster growth) phenomena of irradiated materials; and energetics and kinetics of dislocation bypass of defects formed by interstitial clustering and formation of prismatic loops, informing statistical models of continuum character with regard to processes of dislocation glide, vacancy agglomeration and swelling, climb and cross slip.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Electronic Structure Calculations of Oxygen Atom Transport Energetics in the Presence of Screw Dislocations in Tungsten

Plastic flow in body-centered cubic (bcc) alloys is governed by the thermally-activated motion of screw dislocations in close-packed planes. In bcc interstitial solid solutions, solute diffusion can occur at very fast rates owing to low migration energies and solute concentrations. Under mechanical loading, solutes may move on the same or similar time scale as dislocations glide, even at low temperatures, potentially resulting in very rich co-evolution processes that may have important effects in the overall material response. It is therefore important to accurately quantify the coupling between interstitial impurities and dislocations, so that larger-scale models can correctly account for their interactions. In this paper, we use electronic structure calculations to obtain the energetics of oxygen diffusion under stress and its interaction energy with screw dislocation cores in bcc tungsten. We find that oxygen atoms preferentially migrate from tetrahedral to tetrahedral site with an energy of 0.2 eV. This energy couples only weakly to hydrostatic and deviatoric deformations, with activation volumes of less than 0.02 and 0.02 b 3 , respectively. The strongest effect is found for the inelastic interaction between O atoms and screw dislocation cores, which leads to attractive energies between 1.2 and 1.9 eV and sometimes triggers a transformation of the screw dislocation core from an easy core configuration to a hard core configuration.

36 MATERIALS SCIENCE↗