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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Porous CeO 2 /CuO Heterostructure for Efficient Hydrogen Evolution Reaction in an Acidic Medium

A composite electrocatalyst CeO 2 /CuO is fabricated for the hydrogen evolution reaction (HER) via a simple, facile, one‐step hydrothermal method, using F‐127 as a template and structure directing agent. The prepared composite CeO 2 /CuO shows top‐notch HER activities with a small overpotential of 98 mV at 10 mA cm −2 and just 160 mV overpotential to attain a current density of 50 mA cm −2 with good stability for 20 h in an acidic medium. The enhanced catalytic activities of CeO 2 /CuO nanocomposite are attributed to their synergetic interface interaction, which lead to improved conductivity, reactive sites, and oxygen vacancies in their lattices. This study aims to advance the development of earth‐abundant transition metal oxides–based electrocatalysts as economical, durable, and efficient HER electrocatalysts to replace noble metal–based materials in the future.

Chemistry↗
DOE OSTI2020

Origin of Suppression of Proximity-Induced Superconductivity in Bi/Bi 2 Sr 2 CaCu 2 O 8+δ Heterostructures

Mixing of topological states with superconductivity could result in topological superconductivity with the elusive Majorana fermions potentially applicable in fault-tolerant quantum computing. One possible candidate considered for realization of topological superconductivity is thin bismuth films on Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212). Here, we present angle-resolved and core-level photoemission spectroscopy studies of thin Bi films grown in-situ on as-grown Bi2212 that show the absence of proximity effect. We find that the electron transfer from the film to the substrate and the resulting severe underdoping of Bi2212 at the interface is a likely origin for the absence of proximity effect. We also propose a possible way of preventing a total loss of proximity effect in this system. Our results offer a better and more universal understanding of the film/cuprate interface and resolve many issues related to the proximity effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Mechanical and Ionic Characterization for Organic Semiconductor–Incorporated Perovskites for Stable 2D/3D Heterostructure Perovskite Solar Cells

Hybrid metal halide perovskite (MHP) materials, while being promising for photovoltaic technology, also encounter challenges related to material stability. Combining 2D MHPs with 3D MHPs offers a viable solution, yet there is a gap in the understanding of the stability among various 2D materials. The mechanical, ionic, and environmental stability of various 2D MHP ligands are reported, and an improvement with the use of a quater-thiophene-based organic cation (4TmI) that forms an organic-semiconductor incorporated MHP structure is demonstrated. It is shown that the best balance of mechanical robustness, environmental stability, ion activation energy, and reduced mobile ion concentration under accelerated aging is achieved with the usage of 4TmI. It is believed that by addressing mechanical and ion-based degradation modes using this built-in barrier concept with a material system that also shows improvements in charge extraction and device performance, MHP solar devices can be designed for both reliability and efficiency.

14 SOLAR ENERGY↗
DOE OSTI2024

Evidence of Directional Structural Superlubricity and Lévy Flights in a van der Waals Heterostructure

Abstract Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in‐plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals (2D crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless contacts. Directional structural superlubricity, to date unrealized in 2D systems, is possible when the reciprocal lattices of the two crystals coincide in one direction only. Here, directional structural superlubricity a α‐bismuthene/graphite van der Waals system is evidenced, manifested by spontaneous hopping of the islands over hundreds of nanometers at room temperature, resolved by low‐energy electron microscopy and supported by registry simulations. Statistical analysis of individual and collective α‐bismuthene islands populations reveal a heavy‐tailed distribution of the hopping lengths and sticking times indicative of Lévy flight dynamics, largely unobserved in condensed‐matter systems.

Le Ster, Maxime↗
DOE OSTI2021

In situ investigation of conducting interface formation in $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ heterostructure

The high-mobility conducting interface (CI) between LaAlO 3 (LAO) and SrTiO 3 (STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V bi ) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O 2 (g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Here, our results demonstrate not only the V bi -driven CI formation in as-grown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

We present a detailed study of 7-nm thick Al layers epitaxially grown on In x Al 1-x As or Al 1-x Ga x Sb y As 1-y (0 0 1) semiconductors using high-resolution transmission electron microscopy (HRTEM) and synchrotron X-ray diffraction (XRD). These techniques provide high spatial and high reciprocal space resolution information about Al lattice orientations and interfacial structure, highlighting the existence of a strong correlation between the surface lattice parameter of the semiconductor and the normal orientation of the aluminum film. The normal orientation of Al layers is found to be [1 1 1] when the in-plane semiconductor surface lattice parameter, a S , is smaller than 5.98 Å, and is [1 1 0] when aS is larger than this value. In the transition between these lattice parameters where one orientation is preferred, both orientations may be observed. Concomitant with the change in normal orientation is an inversion in the strain state of the aluminum film. When the normal orientation is [1 1 1], the Al film is compressively strained; while for [1 1 0] normal orientations, the Al in-plane strain is tensile. An energy balance model, accounting for surface, interfacial, side-face, and strain energy, and the registry of lattice planes across the semiconductor/aluminum interface provide explanations for the observed normal orientation and strain inversion.

36 MATERIALS SCIENCE↗