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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
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DOE OSTI2024

Spin-Dependent $\pi$$\pi$* Gap in Graphene on a Magnetic Substrate

Here, we present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle- and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the intercalation of Eu in the graphene/Ni(111) interface gives rise to a gapped freestanding dispersion of the $\pi$$\pi$* Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature and a spin-polarized Van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spin-Charge-Lattice Coupling across the Charge Density Wave Transition in a Kagome Lattice Antiferromagnet

Understanding spin and lattice excitations in a metallic magnetic ordered system forms the basis to unveil the magnetic and lattice exchange couplings and their interactions with itinerant electrons. Kagome lattice antiferromagnet FeGe is interesting because it displays a rare charge density wave (CDW) deep inside the antiferromagnetic ordered phase that interacts with the magnetic order. Here, we use neutron scattering to study the evolution of spin and lattice excitations across the CDW transition 𝑇 CDW in FeGe. While spin excitations below ∼100 meV can be well described by spin waves of a spin-1 Heisenberg Hamiltonian, spin excitations at higher energies are centered around the Brillouin zone boundary and extend up to ∼180 meV consistent with quasiparticle excitations across spin-polarized electron-hole Fermi surfaces. Furthermore, 𝑐-axis spin wave dispersion and Fe-Ge optical phonon modes show a clear hardening below 𝑇 CDW due to spin-charge-lattice coupling but with no evidence of a phonon Kohn anomaly. By comparing our experimental results with density functional theory calculations in absolute units, we conclude that FeGe is a Hund’s metal in the intermediate correlated regime where magnetism has contributions from both itinerant and localized electrons arising from spin polarized electronic bands near the Fermi level.

charge density waves↗
DOE OSTI2020

Electronic structure and small-hole polarons in YTiO 3

As a prototypical Mott insulator with ferromagnetic ordering, YTiO 3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterizations of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior with an activation energy of ~0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory calculations. Hard x-ray photoelectron spectroscopy measurements show the lower Hubbard band at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Native defects in antiferromagnetic topological insulator MnBi 2 Te 4

Using scanning tunneling microscopy and spectroscopy, in this study we visualized the native defects in antiferromagnetic topological insulator MnBi 2 Te 4 . Two native defects, Mn Bi and Bi Te antisites, can be well resolved in the topographic images. Mn Bi tend to suppress the density of states at the conduction band edge. Spectroscopy imaging reveals a localized peaklike local density of state at ~ 80 meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from Bi Mn antisites at Mn sites. The random distribution of Mn Bi and Bi Mn antisites results in spatial fluctuation of local density of states near the Fermi level in MnBi 2 Te 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Orbital ordering in the layered perovskite material CsVF 4

In strongly correlated electronic systems, several novel physical properties are induced by the orbital degree of freedom. In particular, orbital degeneracy near the Fermi level leads to spontaneous symmetry breaking, such as the nematic state in FeSe and the orbital ordering in several perovskite systems. Here, the novel layered perovskite material CsVF 4 , with a 3 d 2 electronic configuration, was systematically studied using density-functional theory and a multiorbital Hubbard model within the Hatree-Fock approximation. Furthermore, our results show that CsVF 4 should be magnetic, with a G-type antiferromagnetic arrangement in the a b plane and weak antiferromagnetic exchange along the c axis, in agreement with experimental results. Driven by the Jahn-Teller distortion in the VF 6 octahedra that shorten the c axis, the system displays an interesting electron occupancy d x y 1 ( d x z d y z ) 1 corresponding to the lower nondegenerate d x y orbital being half-filled and the other two degenerate d y z and d x z orbitals sharing one electron per site. We show that this degeneracy is broken and a novel d y z / d x z staggered orbital pattern is here predicted by both the first-principles and Hubbard model calculations. This orbital ordering is driven by the electronic instability associated with degeneracy removal to lower the energy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Nodeless kagome superconductivity in LaRu 3 Si 2

We report muon spin rotation (μSR) experiments together with first-principles calculations on microscopic properties of superconductivity in the kagome superconductor LaRu 3 Si 2 with T c ≃ 7K. Below Tc, μSR reveals type-II superconductivity with a single s-wave gap, which is robust against hydrostatic pressure up to 2 GPa. We find that the calculated normal state band structure features a kagome flat band, and Dirac as well as van Hove points formed by the Ru-dz 2 orbitals near the Fermi level. We also find that electron-phonon coupling alone can only reproduce a small fraction of T c from calculations, which suggests other factors in enhancing T c such as the correlation effect from the kagome flat band, the van Hove point on the kagome lattice, and the high density of states from narrow kagome bands. Our experiments and calculations taken together point to nodeless moderate coupling kagome superconductivity in LaRu 3 Si 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Intrinsic and complex defect engineering of quasi-one-dimensional ribbons Sb 2 S 3 for photovoltaics performance

Sb 2 S 3 has attracted great attention recently as a prospective solar cell absorber material. In this work, intrinsic defects, dopants, and their complexes in Sb 2 S 3 are systematically investigated by using hybrid functional theory. V Sb and V S are dominant native defects and pin the Fermi level near the midgap, which is consistent with the high resistivity observed experimentally. Both V Sb and V S introduce deep levels inside the band gap, which can trap free carriers. Our calculated deep transition levels of V Sb and Sb S are consistent well with the results of the deep-level transient spectroscopy measurement. We further study dopants (including Cu, Ti, Zn, Br, and Cl) in Sb 2 S 3 and find that Zn and Br/Cl are shallow acceptors and donors, respectively, which may be used to control the carrier and trap densities in Sb 2 S 3 . In addition, the defect complexes, i.e., Cu(Zn) Sb +V S and Cl(Br) S +V Sb are also investigated. The interaction between the donor and acceptor defects makes the defect levels of complexes shallower and less detrimental to carrier transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Screening two-dimensional materials with topological flat bands

The topological flat band (TFB) has been proposed theoretically in various lattice models, to exhibit a rich spectrum of intriguing physical behaviors. However, the experimental demonstration of flat band (FB) properties has been severely hindered by the lack of materials realization. In this study, by screening materials from a first-principles materials database, we identify a group of two-dimensional materials with TFBs near the Fermi level, covering some simple line-graph and generalized line-graph FB lattice models. These include the kagome sublattice of O in Ti O 2 yielding a spin-unpolarized TFB, and that of V in ferromagnetic V 3 F 8 yielding a spin-polarized TFB. The monolayer Nb 3 Te Cl 7 and its counterparts from element substitution are found to be breathing-kagome-lattice crystals. The family of monolayer II I 2 V I 3 compounds exhibit a TFB representing the coloring-triangle lattice model. Re F 3 , Mn F 3 , and Mn Br 3 are all predicted to be diatomic-kagome-lattice crystals, with TFB transitions induced by atomic substitution. Finally, Hg F 2 , Cd F 2 , and Zn F 2 are discovered to host dual TFBs in the diamond-octagon lattice. Our findings pave the way to further experimental exploration of eluding FB materials and properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interplay between charge ordering and geometric ferroelectricity in LuFe 2 O 4 /LuFeO 3 superlattices

Oxide superlattices have drawn great attentions owing to the intriguing coupling among elastic, electrical, and magnetic orderings at the interfaces and the emerging of improper ferroelectricity. Here, superlattices composed of hexagonal LuFeO 3 (h-LuFeO 3 ) and LuFe 2 O 4 are investigated via density functional theory calculations. h-LuFeO 3 is a well-known multiferroic material that is stable only in thin-film or doped bulk state, while LuFe 2 O 4 is a charge ordered material where the existence of ferroelectricity is still in controversy. We have found that the charge ordering (CO) induced polarizations in LuFe 2 O 4 layers coexist with the geometric polarizations in h-LuFeO 3 layers in the (LuFe 2 O 4 ) m /(LuFeO 3 ) n superlattices with different periodicities, and the ferroelectric states are generally preferred over the antiferroelectric states for LuFe 2 O 4 in superlattices. The out-of-plane polarizations in h-LuFeO 3 and LuFe 2 O 4 layers tend to be aligned in parallel, and the overall polarization increases with the ratio of h-LuFeO 3 . The influence of layered polarizations on the local electrostatic potential is not significant except the detected small trend caused by the CO-induced polarization within a FeO bilayer. Besides, the local electronic structures show that the Fermi level position in a certain layer can be tuned by the valences of Fe in this layer and the polarization distributions in neighboring layers. LuFe 2 O 4 layers sandwiched between thick h-LuFeO 3 layers are more susceptible. The calculated configurations of the superlattices are supported by atomic-resolution transmission electron microscopy experiments. Our results pave a way for tunable ferroelectricity in superlattice systems and create a new playground for manipulating the coupling between various degrees of freedom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Structure, electronic and magnetic characterization, and calculated electronic structures of two oxyhalide hexagonal perovskites

Herein we report the crystal structures, initial magnetic and charge transport characterization, and calculated electronic structures of the hexagonal oxyhalide perovskites, Ba 7 Ru 4 O 15 Cl 2 and Ba 7 Ru 4 O 15 Br 2 . The experimental information is obtained through the study of single crystals. Face-sharing Ru O 6 octahedra form Ru 2 O 9 dimers in a layered triangular geometry in these materials; minor amounts of off-magnetic-site structural disorder are present in our crystals. Both are magnetically isotropic, with 2.5 μB/mol-Ru, Curie-Weiss theta –185 K, and 2.9 μB/mol-Ru, Curie-Weiss theta –168 K, respectively. Broad features in the magnetic susceptibility and heat capacity associated with magnetic ordering (at 35 and 37 K, respectively) are observed. The charge transport band gaps are 0.03 eV for the oxychloride and 0.006 eV for the oxybromide. There is no gap at the Fermi level for either of these compounds in density-functional theory electronic structure calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Growth, characterization, and Chern insulator state in MnBi 2⁢ Te 4 via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unusual magnetic and transport properties in HoMn 6 Sn 6 kagome magnet

Here, with intricate lattice structures, kagome materials are an excellent platform to study various fascinating topological quantum states. In particular, kagome materials, revealing large responses to external stimuli such as pressure or magnetic field, are subject to special investigation. Here we study the kagome-net HoMn 6 Sn 6 magnet that undergoes paramagnetic to ferrimagnetic transition (below 376 K) and reveals spin-reorientation transition below 200 K. In this compound, we observe the topological Hall effect and substantial contribution of anomalous Hall effect above 100 K. We unveil the pressure effects on magnetic ordering at a low magnetic field from the pressure tunable magnetization measurement. By utilizing high-resolution angle-resolved photoemission spectroscopy, Dirac-like dispersion at the high-symmetry point K is revealed in the vicinity of the Fermi level, which is well supported by the first-principles calculations. Our investigation will pave the way to understanding the magnetotransport and electronic properties of various rare-earth-based kagome magnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Superconductivity of Ta-Hf and Ta-Zr alloys: Potential alloys for use in superconducting devices

The electronic properties relevant to superconductivity are reported for bulk Ta-Hf and Ta-Zr body centered cubic alloys, in a large part to determine whether their properties are suitable for potential use in superconducting qbits. The body centered cubic unit cell sizes increase with increasing alloying. Here, the results of magnetic susceptibility, electrical resistivity, and heat capacity characterization are reported. While elemental Ta is a type I superconductor, the alloys are type II strong coupling superconductors. Although decreasing the electron count per atom is expected to increase the density of electronic states at the Fermi level and thus the superconducting transition temperature (T c ) in these systems, we find that this is not sufficient to explain the significant increases in the superconducting T c 's observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Topological Hall effect in CeAlGe

The Weyl semimetal CeAlGe is a promising material to study nontrivial topologies in real and momentum space due to the presence of a topological magnetic phase. Our results at ambient pressure show that the electronic properties of CeAlGe are extremely sensitive to small stoichiometric variations. In particular, the topological Hall effect (THE) present in CeAlGe is absent in some samples of almost identical chemical composition. The application of external pressure favors the antiferromagnetic ground state. It also induces a THE where it was not visible at ambient pressure. Furthermore, a small pressure is sufficient to drive the single region of the THE in magnetic fields into two different ones. Our results reveal an extreme sensitivity of the electronic properties of CeAlGe to tiny changes in its chemical composition, leading to a high tunability by external stimuli. We can relate this sensitivity to a shift in the Fermi level and to domain walls.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Bending effects and optical properties of WSe 2 nanoribbons of topological phase

A WSe 2 monolayer of 1T' phase is a large band gap quantum spin Hall insulator, supporting dissipationless charge and spin transports through the topologically protected edge states. Here, in this work, we explore the nanoribbon forms of 1T' phase WSe 2 by first-principles density functional calculations and the many-body perturbation GW and Bethe-Salpeter equation method. We found that the 1T' WSe 2 nanoribbon can show topological edge states with a ribbon width of ~4-6 nm. Those edge bands show crossing through the Fermi level an odd number of times, with one kind of spin-polarization connecting the valence band continuum and conduction band continuum. The topological features of the edge bands hold even under small and medium bending in the nanoribbon, while large bending induces large band splitting, resulting in a topological switch-off in the edge bands. The semiconducting 1T' WSe2 nanoribbon shows a large tunability with bending in optical absorption spectra and exciton states. The lowest-energy exciton is changed from optically dark in the flat nanoribbon to bright in the bent nanoribbons. These properties in the 1T' WSe 2 nanoribbons suggest potential applications in controllable quantum electronics and exciton-based quantum information processes.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Metallization and spin fluctuations in Cu-doped lead apatite

An electronic structure and magnetic properties analysis of the recently proposed Cu-doped lead apatite is performed. Here, we show that electronic structures of differently Cu-substituted structures are characterized by localized molecular Cu-O bands at or near the Fermi level. The Cu substitutions can happen at both Pb1 and Pb2 sites, leading to metallic and semiconducting systems differently. The electronic systems in these bands are highly unstable magnetically and form clusters of rigidly ferromagnetically coupled magnetic moments on Cu and neighboring oxygen atoms with a total moment of about 1µ B . The ground state of uniformly Cu-doped lead apatite appears to be magnetic and semiconducting. The nonuniform distribution of two Cu atoms at the nearest Pb2 sites leads to an antiferromagnetic semiconducting state with formation energy close to uniformly distributed Cu configurations. The inclusion of quantum spin fluctuations confirms the stability of magnetic Cu-O clusters. Our calculations revealed the absence of the long-range magnetic order between uniformly distributed Cu-O clusters, creating the spin glass type of system.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Two-dimensional Dirac semimetal based on the alkaline earth metal CaP 3

Using an evolutionary algorithm in combination with first-principles density-functional theory calculations, we identify a two-dimensional (2D) CaP 3 monolayer as a new Dirac semimetal due to inversion and nonsymmorphic spatial symmetries of the structure. This new topological material, composed of light elements, exhibits high structural stability (higher than the phase known in the literature), which is confirmed by thermodynamic and kinetic stability analysis. Moreover, it satisfies the electron filling criteria, so that its Dirac state is located near the Fermi level. The existence of the Dirac state predicted by the theoretical symmetry analysis is also confirmed by first-principles electronic band structure calculations. We find that the energy position of the Dirac state can be tuned by strain, while the Dirac state is unstable against an external electric field since it breaks the spatial inversion symmetry. In conclusion, our findings should be instrumental in the development of 2D Dirac fermions based on light elements for their application in nanoelectronic devices and topological electronics.

2-dimensional systems↗