Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Dislocation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Dislocation Networks and the Microstructural Origin of Strain Hardening

In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Coupling 2D atomistic information to 3D kink-pair enthalpy models of screw dislocations in bcc metals

The kink-pair activation enthalpy is a fundamental parameter in the theory of plasticity of body-centered cubic (bcc) metals. It controls the thermally activated motion of screw dislocation at low and intermediate temperatures. While direct atomistic calculations of kink pairs on screw dislocations have reached a high degree of accuracy, they can only be practically performed using semiempirical interatomic force fields, as electronic structure methods have not yet reached the level of efficiency needed to capture the system sizes required to model kink-pair structures. In this context, an alternative approach based on standard three-dimensional elastic models, which are efficient but lack atomic-level information, coupled to a substrate potential that represents the underlying lattice, has been widely applied over the past few years. This class of methods, known as ‘line-on-substrate’ (LOS) models, uses the substrate potential to calculate the lattice contribution to the kink-pair energies. In this work, we introduce the stress dependence of the substrate potential into LOS models to evaluate its impact on kink-pair energies. In addition, we include asymmetric dislocation core energies as an extra descriptor of the dislocation character. This asymmetry is also elevated to the continuum level by adding core energies to the general LOS formulation and used to explain potential energy differences known to exist between left and right kinks in bcc metals. Finally, more importantly, by matching the total LOS energies to previously calculated atomistic energies of kink-pair configurations, we issue a rule to establish the value of the so-called core width in nonsingular elasticity theories and reduce its arbitrariness as a mathematical construct.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Influence of dislocations and twin walls in BaTiO 3 on the voltage-controlled switching of perpendicular magnetization

In this work, we investigate the influence of dislocations and twin walls in BaTiO 3 on its ferroelectric response and the resulting effect on the perpendicular magnetic anisotropy (PMA) of a strain-coupled [Co\Ni] n film. A dense twinned structure in conjunction with a high dislocation density significantly reduces the converse piezoelectric effect of BaTiO 3 by hindering the propagation of newly nucleated domains with an applied electric field. This, in turn, results in a modest reduction of the PMA of the ferromagnetic layer. On the other hand, the ferroelectric polarization reorients from [100] to [001] direction in a dislocation-free BaTiO 3 , inducing the maximum achievable in-plane compressive strain of 1.1%. A large fraction of this uniaxial strain is transferred to the magnetoelastically coupled ferromagnetic layers whose magnetization switches to in plane via the inverse magnetostriction effect. This work reveals the critical role of the interplay between twin walls and dislocations within a ferroelectric substrate in the performance of multiferroic heterostructures and provides insight into the development of highly energy-efficient magnetoelectric devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Dislocation structures, interfacing, and magnetism in the L1 0 - MnGa on η ⊥ - Mn 3 N 2 bilayer

Ferromagnetic L1 0 -MnGa was grown by molecular beam epitaxy under ultrahigh vacuum conditions to a 73 ± 5 nm thickness atop of 50 ± 5 nm thick molecular beam epitaxy grown antiferromagnetic η ⊥ -Mn 3 N 2 on a MgO(001) substrate. The MnGa grew along the c-axis with an out-of-plane spacing of c = 3.71 ± 0.01 Å and a relaxed in-plane spacing of a = 4.00 ± 0.05 °A measured with X-ray diffraction and reflection high-energy electron diffraction respectively. Williamson-Hall analysis revealed 67 ± 17 nm tall columnar grains with a residual stress of 2.40 ± 0.26 (×10 -3 ). A radial distribution plot of screw dislocations observed in scanning tunneling microscopy images found an in-plane coherence length of 15 ± 5 nm. Reflection high-energy electron diffraction analysis of the in-plane lattice spacing during growth reveals a critical thickness of 1.05 ± 0.65 nm for the MnGa, by which the MnGa film relaxes by incorporating dislocations of both edge and screw type. Vibrating sample magnetometry was employed to obtain the magnetic properties of the bilayer system. It is found that the dislocation density plays a significant role in understanding the measured moment per unit cell, where a large dislocation density lowers the moment per unit cell significantly due to chemical layering disorder. Finally, this finding is important for materials development of large saturation magnetization.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Decoding the interstitial/vacancy nature of dislocation loops with their morphological fingerprints in face-centered cubic structure

Dislocation loops are critical defects inducing detrimental effects like embrittlement and swelling in materials under irradiation. Distinguishing their nature (interstitial- or vacancy-type) is a long-standing challenge with great implications for understanding radiation damage. Here, we demonstrate that the morphology of radiation-induced Frank loops can unveil their nature in face-centered cubic (fcc) structure: Circular loops are interstitial-type in all fcc materials, while segmented loops are vacancy-type in high stacking fault energy (SFE) alloys but varied-type in low SFE and high-entropy alloys. The polygonal shape is attributed to the dissociation of an a 0 /3<111> dislocation into an a 0 /6<112> Shockley partial and an a 0 /6<110> stair-rod dislocation. The dissociation of vacancy loops is energetically favorable, whereas interstitial loops require external stimuli to promote dislocation propagation. This “morphology-nature” correlation not only highlights the asymmetry of vacancy/interstitial loops but also offers an efficient way to distinguish loop nature for a wide range of materials.

Ma, Kan [City Univ. of Hong Kong, Kowloon (Hong Ko↗
DOE OSTI2018

Phase Field Dislocation Dynamics (PFDD)

Phase Field Dislocation Dynamics (PFDD) is a phase field approach for tracking the motion and interactions of individual dislocations in materials, mostly face-centered cubic (fcc) metals. The phase field approach relies on scalar order parameters or phase field variables to track a quantity of interest. In PFDD, these phase field variables represent the passage of perfect dislocations across each active slip system, with one order parameter defined in each slip system. Partial dislocations are represented with linear combinations of the order parameters. The system is evolved through minimization of the total system energy, which is directly dependent on the phase field variables. All of the physics is described by the total energy functional that is derived from a thermodynamic basis, and the system kinetics are evolved using a Ginzburg-Landau (GL) equation.

Hunter, Abigail↗
DOE OSTI2024

Exascale Dislocation Simulator

ExaDiS, or Exascale Dislocation Simulator, is a set of software modules written to enable numerical simulations of large groups of moving and interacting dislocations, line defects in crystals responsible for crystal plasticity. By tracking time evolution of sufficiently large dislocation ensembles, ExaDiS predicts plasticity response and plastic strength of crystalline materials. ExaDiS is built around a library of core functions for Discrete Dislocation Dynamics method specifically written to perform efficient computations on GPUs.

Bertin, Nicolas↗
DOE OSTI2021

Slip-free multiplication and complexity of dislocation networks in FCC metals

Abstract During plastic deformation of crystalline solids, intricate networks of dislocation lines form and evolve. To capture dislocation density evolution, prominent theories of crystal plasticity assume that 1) multiplication is driven by slip in active slip systems and 2) pair-wise slip system interactions dominate network evolution. In this work, we analyze a massive database of over 100 discrete dislocation dynamics simulations (with cross-slip suppressed), and our findings bring both of these assumptions into question. We demonstrate that dislocation multiplication is commonly observed on slip systems with no applied stress and no plastic strain rate, a phenomenon we refer to as slip-free multiplication. We show that while the formation of glissile junctions provides one mechanism for slip-free multiplication, additional mechanisms which account for the influence of coplanar interactions are needed to fully explain the observations. Unlike glissile junction formation which results from a binary reaction between a pair of slip systems, these new multiplication mechanisms require higher order reactions that lead to complex network configurations. While these complex configurations have not been given much attention previously, they account for about 50% of the line intersections in our database.

36 MATERIALS SCIENCE↗
DOE OSTI2025

PyDislocDyn: A Python code for calculating dislocation drag and other crystal properties

PyDislocDyn is a suite of python programs designed to perform various calculations for dislocation dynamics in the continuum limit. In particular, one of its main purposes is to calculate dislocation drag from phonon wind. Additional features include the averaging of elastic constants for polycrystals, the calculation of the dislocation field including its limiting velocities, and the calculation of dislocation self-energy and line tension.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Kinetic Interaction of Uranium Vacancies and Dislocations in UO 2

Understanding how point defects and defect clusters interact with dislocations in urania is important for a number of phenomena. For example, dislocations are one (of many) trap sites in the fuel where fission gases may accumulate and ultimately nucleate fission gas bubbles. Further, some creep mechanisms are governed by the flow of point defects to dislocations. Thus, for a variety of reasons, it is important to examine how dislocations attract and accelerate the kinetics of point defects.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1972

Relationship of dislocation density of silicon to solar cell current loss at low temperature.

Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.

Mandelkorn, J.↗
NASA NTRS1974

Gravitational effects of process-induced dislocations in silicon

Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.

Porter, W. A.↗
NASA NTRS1984

Edge Stabilized Ribbon (ESR); Stress, Dislocation Density and Electronic Performance

The edge stabilized ribbon (ESR) silicon ribbon was grown in widths of 1, 2.2 and 4.0 inches at speeds ranging from .6 to 7 in/min, which result in ribbon thicknesses of 5 to 400 microns. One of the primary problems remaining in ESR growth is that of thermally induced mechanical stresses. This problem is manifested as ribbon with a high degree of residual stress or as ribbon with buckled ribbon. Thermal stresses result in a high dislocation density in the grown material, resulting in compromised electronic performance. Improvements in ribbon flatness were accomplished by modification of the ribbon cooling profile. Ribbon flatness and other experimental observations of ESR ribbon are discussed. Laser scanner measurements show a good correlation between diffusion length and dislocation density which indicates that the high dislocation densities are the primary cause of the poor current performance of ESR materials. Dislocation densities were reduced and improved electronic performance resulted. Laser scanner data on new and old material are presented.

Sachs, E. M.↗
NASA NTRS1991

Effect of dislocations on properties of heteroepitaxial InP solar cells

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

Weinberg, I.↗
DOE OSTI2013

Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Unprecedented irradiation resistance of nanocrystalline tungsten with equiaxed nanocrystalline grains to dislocation loop accumulation

Nanocrystalline metals are often postulated as irradiation tolerant materials due to higher grain boundary densities. The efficiency of these materials in mitigating irradiation damage is still under investigation. Here, we present an in-situ transmission electron microscopy with ion irradiation study on equiaxed 35 nm grained tungsten (NCW-35 nm) and compare its radiation tolerance, in terms of dislocation loop damage, to several other grades of tungsten with different grain sizes at two temperatures (RT and 1073 K). The NCW-35 nm was shown to possess significant higher radiation tolerance in terms of loop damage. As demonstrated by Kinetic Monte Carlo simulations, at least part of the higher radiation tolerance of the small grains is due to higher interstitial storage (at the grain boundaries) and defect recombination (in the grain interiors) in the small grain material. In addition, experimental observations reveal rapid and efficient dislocation loop absorption by the grain boundaries and this is considered the dominant factor for mass transport to the boundaries during irradiation, enabling the remarkable radiation tolerance of 35 nm grained tungsten. Furthermore, this study demonstrates the possibility of attaining high radiation tolerant materials, in terms of dislocation loop damage, by minimizing grain sizes in the nanocrystalline regime.

36 MATERIALS SCIENCE↗
DOE OSTI2020

STEM Characterization of Dislocation Loops in Irradiated FCC Alloys

In this study, we demonstrate the methodology systematically developed for dislocation loop (perfect and faulted loops) imaging and analysis in irradiated face-centered-cubic (FCC) alloys using scanning transmission electron microscopy (STEM). On-zone [001] STEM imaging was identified as the preferred choice for its accuracy and effectiveness based on the comparison with other dislocation loop imaging techniques including: (i) on-zone STEM imaging using other major low-index zone axes, (ii) kinematic two-beam conditions bright field imaging near the [001] zone axis in conventional TEM (CTEM) mode, and (iii) Rel-Rod CTEM dark-field (DF) imaging near the [011] zone axis. The effect of STEM collection angle on the contrast formation of dislocation loops was also investigated. The developed method was confirmed by imaging all populations of perfect and faulted loops of types a/2$\langle$110$\rangle${110} and a/3$\langle$111$\rangle${111} found in an ion irradiated Ni40Fe40Cr20 alloy. The proposed STEM-based technique can easily identify said loops with a size greater than 10 nm without any assumptions such as those commonly made using the conventional Rel-Rod CTEM-DF technique. The recommended methodology in this study is developed as a quick and convenient tool that can be generally applied to irradiated FCC-based materials due to their common crystallography.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Study of the dislocation activity in a Mg–Y alloy by differential aperture X-ray microscopy

Differential aperture X-ray microscopy (DAXM) was employed in this study to reveal the development of geometrically necessary dislocations (GNDs) when a Mg-5 wt% Y alloy is subjected to bending. The characters of the GNDs were determined from the streak direction of the diffraction peaks. Five grains were analyzed voxel by voxel for the GND content. Among those voxels with peak streaking, 77% contain basal or non-basal < a > GNDs, while the other 23% contain < c + a > GNDs. Furthermore, those < c + a > dislocations were nucleated to accommodate local stress concentration. Even though < c + a > dislocations are less mobile, they make important contribution to the high ductility of Mg-Y alloys.

36 MATERIALS SCIENCE↗