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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Wide temperature range electronic device with lead attachment

A electronic device including lead attachment structure which permits operation of the devices over a wide temperature range is reported. The device comprises a core conductor having a thin coating of metal thereon whereby only a limited amount of coating material is available to form an alloy which bonds the core conductor to the device electrode, the electrode composition thus being affected only in the region adjacent to the lead.

Farrell, R.↗
NASA NTRS1972

A linear voltage-tunable distributed null device.

A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.

Benz, H. F.↗
NASA NTRS1974

Charge coupled device image sensor study

An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging systems was conducted. The study resulted in design recommendations for two sensors, an approximately 500 times 500 element imaging device and a 1 times 190 element linear imaging device with a 190 times 121 buffer store. Emphasis was placed on the higher resolution, area-imaging sensor. The objectives of the proposed sensors are listed, results of the experiments are analyzed, and estimates of the device performance are presented. A summary of the major technical recommendations is included.

Source record↗
NASA NTRS1973

Model experiments to evaluate vortex dissipation devices proposed for installation on or near aircraft runways

The effectiveness of various vortex dissipation devices proposed for installation on or near aircraft runways is evaluated on basis of results of experiments conducted with a 0.03-scale model of a Boeing 747 transport aircraft in conjunction with a simulated runway. The test variables included type of vortex dissipation device, mode of operation of the powered devices, and altitude, lift coefficient and speed of the generating aircraft. A total of fifteen devices was investigated. The evaluation is based on time sequence photographs taken in the vertical and horizontal planes during each run.

Kohl, R. E.↗
NASA NTRS1974

A varistor technique to reduce the hazards of electrostatics to electroexplosive devices

Inherent to the design and construction of electroexplosive devices is a vulnerability to inadvertent initiation from electrostatic discharges. The small spacing (approx. 1 mm) between the bridgewire circuits and the body and between bridgewire circuits afford easy breakdown paths for electrostatic voltages. In some cases where metallic component pyrotechnic materials are loaded onto the bridgewire circuits the susceptability to inadvertant initiation is increased. An approach to solving this problem is reported based on the application of a new varistor (nonlinear resistor) material. Certain formulations of metal oxides normally have electrically nonconductive characteristics. However, at selective potentials they become conductive. By proper design and incorporation into electroexplosive devices a variety of breakdown potentials can be achieved. The breakdown potential of the varistor element can be adjusted to meet the requirements of the particular electroexplosive device. The varistor element can also be incorporated in an area isolated from the explosive or pyrotechnic material. Adaptation of this technique to a specific electroexplosive device and the resulting test data are presented.

Menichelli, V. J.↗
NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗
NASA NTRS1975

The Annular Momentum Control Device (AMCD)

An annular momentum control device consisting principally of a spinning rim, a set of noncontacting magnetic bearings for supporting the rim, a noncontacting electric motor for driving the rim, and, for some applications, one or more gimbals is described. The device is intended for applications where requirements for control torque and momentum storage exist. Hardware requirements and potential unit configurations are discussed. Theoretical considerations for the passive use of the device are discussed. Potential applications of the device in other than passive configurations for the attitude control, stabilization, and maneuvering of spacecraft are reported.

Anderson, W. W.↗
NASA NTRS1975

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Ladany, I.↗
NASA NTRS1975

Thermal coupling apparatus for electroexplosive devices

This paper describes the equipment for nondestructive testing of electroexplosive devices using a thermal coupling technique. The technique utilizes a self-balancing bridge to apply a nominal amount of power to the bridge wire of the device. The bridge wire behaving as a thermal sensor detects heat flow into the device when heat is preferentially directed down the center of the explosive column toward the bridge wire. Thermal equilibrium is upset and the change in power from the self-balancing bridge is measured directly in watts. Faults such as omissions, incorrect materials, contamination, and so on, can be detected by observing the rate of heat flow to the bridge wire. The response is indicative of the thermal resistance and diffusivity of the system. The paper also presents data on electroexplosive devices loaded with inert and explosive materials.

Menichelli, V. J.↗
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1978

Investigation of charge coupled device correlation techniques

Analog Charge Transfer Devices (CTD's) offer unique advantages to signal processing systems, which often have large development costs, making it desirable to define those devices which can be developed for general system's use. Such devices are best identified and developed early to give system's designers some interchangeable subsystem blocks, not requiring additional individual development for each new signal processing system. The objective of this work is to describe a discrete analog signal processing device with a reasonably broad system use and to implement its design, fabrication, and testing.

Lampe, D. R.↗
NASA NTRS1979

Optical devices for proximity operations study and test report

Operational and physical requirements were investigated for a low-light-level viewing device to be used as a window-mounted optical sight for crew use in the pointing, navigating, stationkeeping, and docking of space vehicles to support space station operations and the assembly of large structures in space. A suitable prototype, obtained from a commercial vendor, was subjected to limited tests to determine the potential effectiveness of a proximity optical device in spacecraft operations. The constructional features of the device are discussed as well as concepts for its use. Tests results show that a proximity optical device is capable of performing low-light-level viewing services and will enhance manned spacecraft operations.

Smith, R. A.↗
NASA NTRS1980

Capillary acquisition devices for high-performance vehicles: Executive summary

Technology areas critical to the development of cryogenic capillary devices were studied. Passive cooling of capillary devices was investigated with an analytical and experimental study of wicking flow. Capillary device refilling with settled fluid was studied using an analytical and experimental program that resulted in successful correlation of a versatile computer program with test data. The program was used to predict Centaur D-1S LO2 and LH2 start basket refilling. Comparisons were made between the baseline Centaur D-1S propellant feed system and feed system alternatives including systems using capillary devices. The preferred concepts from the Centaur D-1S study were examined for APOTV and POTV vehicles for delivery and round trip transfer of payloads between LEO and GEO. Mission profiles were determined to provide propellant usage timelines and the payload partials were defined.

Blatt, M. H.↗
NASA NTRS1980

Method of forming a sharp edge on an optical device

A sharp edge is formed on an optical device by placing the optical device in a holding mechanism; grinding one surface so that it and a surface of the holding mechanism are co-planar; and polishing both the surface of the optical device and the surface of the holding mechanism with felt until an edge on the surface of the optical device adjacent to the surface of the holding mechanism obtains a desired sharpness.

Fleetwood, C. M.↗
NASA NTRS1979

Aerospace Ground Equipment for model 4080 sequence programmer. A standard computer terminal is adapted to provide convenient operator to device interface

The Aerospace Ground Equipment (AGE) provides an interface between a human operator and a complete spaceborne sequence timing device with a memory storage program. The AGE provides a means for composing, editing, syntax checking, and storing timing device programs. The AGE is implemented with a standard Hewlett-Packard 2649A terminal system and a minimum of special hardware. The terminal's dual tape interface is used to store timing device programs and to read in special AGE operating system software. To compose a new program for the timing device the keyboard is used to fill in a form displayed on the screen.

Nissley, L. E.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1983

Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

Stassinopoulos, E. G.↗
NASA NTRS1984

Crystal growth of device quality GaAs in space

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Gatos, H. C.↗