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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Refractive index and birefringence of 2H silicon carbide

The refractive indices of 2H SiC were measured over the wavelength range 435.8 to 650.9 nm by the method of minimum deviation. At the wavelength lambda = 546.1 nm, the ordinary index n sub 0 was 2.6480 and the extraordinary index n sub e was 2.7237. The estimated error (standard deviation) in the measured values is 0.0006 for n sub 0 and 0.0009 for n sub e. The experimental data were curve fitted to the Cauchy equation for the index of refraction as a function of wavelength. The birefringence of 2H SiC was found to vary from 0.0719 at lambda = 650.9 nm to 0.0846 at lambda = 435.8 nm.

Powell, J. A.↗
NASA NTRS1972

Low-temperature solid-state phase transformations in 2H silicon carbide

Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.

Will, H. A.↗
NASA NTRS1972

Refractive index and birefringence of 2H silicon carbide.

Measurement of the refractive indices of 2H SiC over the wavelength range from 435.8 to 650.9 nm by the method of minimum deviation. A curve fit of the experimental data to the Cauchy dispersion equation yielded, for the ordinary index, n sub zero = 2.5513 + 25,850/lambda squared + 8.928 x 10 to the 8th power/lambda to the 4th power and, for the extraordinary index, n sub e = 2.6161 + 28,230/lambda squared + 11.490 x 10 to the 8th power/lambda to the 4th power when lambda is expressed in nm. The estimated error (standard deviation) in these values is plus or minus 0.0006 for n sub zero and plus or minus 0.0009 for n sub e. The birefringence calculated from these expressions is about 20% less than previously published values.

Powell, J. A.↗
NASA NTRS1972

Low-temperature solid-state phase transformations in 2H silicon carbide.

Study of the phase transformations taking place in 2H SiC single crystals at temperatures as low as 400 C. Some crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. The transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid-state transformation above 1400 C.

Powell, J. A.↗
NASA NTRS1974

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Will, H. A.↗
NASA NTRS1974

Out-of-pile creep behavior of uranium carbide

Compression creep tests were investigated on various UC-based fuel materials having a variation in both density and composition. Specimens were prepared by casting and by hot pressing. Steady-state creep rates were measured under vacuum at 1400 to 1800 C in the stress range 500-4000 psi.

Wright, T. R.↗
NASA NTRS1974

High gas velocity burner tests on silicon carbide and silicon nitride at 1200 C

Ten SiC materials and five Si3N4 materials were exposed in a Mach 1-gas-velocity burner simulating a gas-turbine engine environment. All materials studied are commercially available. Cyclic tests up to 100 hours' duration were conducted at specimen temperatures of 1200 C. A specimen geometry was used that develops thermal stresses during thermal cycling in a manner similar to blades and vanes of a gas turbine engine. Materials were compared on a basis of weight change, dimensional reductions, metallography, fluorescent-penetrant inspection, X-ray diffraction analyses, failure mode, and general appearance. One hot-pressed SiC, one reaction-sintered SiC, and three hot-pressed Si3N4 materials survived the program goal of 100 one-hour cycles of exposures. Of the materials that failed to meet the program goal, thermal fatigue was identified as the exclusive failure mode.

Sanders, W. A.↗