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At least 559 records · Page 31

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NASA NTRS1975

Modeling of turbine blade tip contact

A mathematical model is developed to evaluate a number of physical effects in turbomachine blade tip contact on the basis of a broad brush approach to provide insights without undue complexity. The analysis is restricted to the case of a shoe encountering a moving blade row and pressing against it with a fixed time-average force. Relative displacement components in the contact region are identified and determined. Two key equations are derived, where it is shown that wear rate plays a strong role in determining the traversal speed of the contact patch. The formula for estimating the size of the contact patch shows that the higher the traversal speed is, the wider is the contact patch.

Burton, R. A.↗

NASA NTRS1980

Short-circuit current improvement in thin cells with a gridded back contact

The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.

Giuliano, M.↗

NASA NTRS1979

Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

Knobloch, J.↗

NASA NTRS1981

Stress concentration in the vicinity of a hole defect under conditions of Hertzian contact

Two dimensional photoelastic stress analyses were conducted for epoxy resin models containing a hole defect under the conditions of Hertzian contact. Stress concentrations around the defect were determined as a function of several parameters. The effect of tangential traction on the stress concentration was also determined. Sharp stress concentrations occur in the vicinity of both the left and the right side of the hole. The stress concentration becomes more distinct the larger the hole diameter and the smaller distance between the hole and the contact surface. The stress concentration is greatest when the disk imposing a normal load is located at the contact surface directly over the hole. The magnitude and the location of stress concentration varies with the distance between the Hertzian contact area and the hole. The area involved in a process of rolling contact fatigue is confined to a shallow region at both sides of the hole. It was found that the effect of tangential traction is comparatively small on the stress concentration around the hole.

Yamamoto, T.↗

NASA NTRS1983

RF Sputtering of Gold Contacts On Niobium

Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

Barr, D. W.↗

NASA NTRS1981

Thermal stability of GaAs heteroface solar cells with differing contact materials

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.

Friesen, W. J.↗

NASA NTRS1982

Elastohydrodynamic lubrication of elliptical contacts

Fully flooded, elastohydrodynamically lubricated, elliptical contacts are discussed. The relevant equations used in the elastohydrodynamic lubrication (EHL) of elliptical contacts are briefly described. Film thickness equations are developed for materials of high elastic modulus, such as metal, and for materials of low elastic modulus, such as rubber. In addition to the film thickness equations that are developed, plots of pressure and film thickness are presented. A theoretical study of the influence of lubricant starvation on film thickness and pressure in hard and soft elliptical elastohydrodynamic contacts is presented. From the results for both hard and soft EHL contacts a simple and important dimensionless inlet boundary distance is specified. It is also found that the film thickness for a starved condition can be written in dimensionless terms as a function of the inlet distance parameter and the film thickness for a fully flooded condition. contour plots of pressure and film thickness in and around the contact are shown for fully flooded and starved conditions. The theoretical findings are compared directly with results obtained experimentally.

Hamrock, B. J.↗

NASA NTRS1983

Dynamic tooth loads and stressing for high contact ratio spur gears

An analysis and computer program were developed for calculating the dynamic gear tooth loading and root stressing for high contact ratio gearing (HCRG) as well as LCRG. The analysis includes the effects of the variable tooth stiffness during the mesh, tooth profile modification, and gear errors. The calculation of the tooth root stressing caused by the dynamic gear tooth loads is based on a modified Heywood gear tooth stress analysis, which appears more universally applicable to both LCRG and HCRG. The computer program is presently being expanded to calculate the tooth contact stressing and PV values. Sample application of the gear program to equivalent LCRG (1.566 contact ratio) and HCRG (2.40 contact ratio) revealed the following: (1) the operating conditions and dynamic characteristics of the gear system an affect the gear tooth loading and root stressing, and therefore, life significantly; (2) the length of the profile modification affect the tooth loading and root stressing significantly, the amount depending on the applied load, speed, and contact ratio; and (3) the effect of variable tooth stiffness is small, shifting and increasing the response peaks slightly from those for constant tooth stiffness.

Cornell, R. W.↗

NASA NTRS1985

Measuring The Contact Resistances Of Photovoltaic Cells

Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

Burger, D. R.↗

NASA NTRS1982

Solar cell contacts

Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.

Meier, D. L.↗

NASA NTRS1985

Generation of spiral bevel gears with zero kinematical errors and computer aided simulation of their meshing and contact

There is proposed a method for generation of Gleason's spiral bevel gears which provides the following properties of meshing and contact: (1) the contact normal keeps its original direction within the neighborhood of the main contact point; (2) the contact ellipse moves along the gear tooth surface; and (3) the kinematical errors caused by Gleason's method of cutting are almost zero. Computer programs for the simulation of meshing and bearing contact are developed.

Litvin, F. L.↗

NASA NTRS1988

Rugged low-resistance contacts to YBa2Cu3O(x)

Rugged low-resistance contacts to a high-T(c) superconductor YBa2Cu3O(x) were made by melting gold onto the sample surface, where it diffused into the sample pores making a strong mechanical contact in the form of a bead. Contact resistances lower than 50 microohm were obtained, allowing passage, without heating, of a direct current of about 5 A while the sample remained in the superconducting state at 20 K. Results of SEM and of contact-resistance, critical-current, and shear-strength measurements on these contacts are included.

Caton, R.↗

NASA NTRS1989

Chain Of Test Contacts For Integrated Circuits

Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

Lieneweg, Udo↗

NASA NTRS1989

Mixed formulation for frictionless contact problems

Simple mixed finite element models and a computational precedure are presented for the solution of frictionless contact problems. The analytical formulation is based on a form of Reissner's large rotation theory of the structure with the effects of transverse shear deformation included. The contact conditions are incorporated into the formulation by using a perturbed Lagrangian approach with the fundamental unknowns consisting of the internal forces (stress resultants), the generalized displacements, and the Lagrange multipliers associated with the contact conditions. The element characteristic array are obtained by using a modified form of the two-field Hellinger-Reissner mixed variational principle. The internal forces and the Lagrange multipliers are allowed to be discontinuous at interelement boundaries. The Newton-Raphson iterative scheme is used for the solution of the nonlinear algebraic equations, and the determination of the contact area and the contact pressures.

Noor, Ahmed K.↗

NASA NTRS1989

Observations of a shock and a recombination layer at the contact surface of Comet Halley

Results are presented on observations in the vicinity of the contact surface of the Comet Halley, obtained by the Giotto ion mass spectrometer, with emphasis placed on two specific events observed in this region on the inbound pass. One was a burst of energized ions (about 20 eV) of 2-sec duration observed two seconds before the contact surface was encountered, which coincided with a pulse in magnetic field strength interpreted by Neubauer (1988) as a fast-mode shock traveling away from the contact surface. The second was a sharp spike in ion densities observed at the contact surface by the mass analyzer, centered approximately at the inner edge of the contact surface. This ion-density spike is interpreted as a boundary layer into which the radial ionospheric flow enters and piles up; the density increase is limited by recombination.

Goldstein, B. E.↗

NASA NTRS1989

Contact conductance evaluation for a full scale space erectable radiator pressurized interface

The baseline thermal control configuration for the Space Station Freedom includes a contact heat exchanger to provide efficient heat transfer between the two-phase thermal bus heat collection/delivery system and the radiator panel heat rejection system. The contact heat exchanger provides a dry interface for a modular radiator system with easy on-orbit panel replacement. July 1988 testing of the Space Erectable Radiator System (SERS) at NASA-JSC provided thermal/vacuum data for three full-scale prototype units of a pressurized dry contact heat exchanger design. Derived contact conductance values agreed with predictions and previous element tests and demonstrated high conductance for relatively low pressure levels. A limited amount of data was also obtained below the operating pressure, resulting in contact conductance trends with respect to interface pressure.

Duschatko, R. John↗

NASA NTRS1991

The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

The effect of introducing a very small amount of Ga into Au-contacted InP on the behavior of that contact system was investigated. It was found that Ga affected both the metallurgical and the electrical behavior of the system. It is shown that Ga atoms in the interstices of the Au lattice prevent the solid-state reactions that normally take place between Au and InP during contact sintering and cause an order of magnitude reduction in the specific contact resistivity. It is also shown that the presence of Ga affects the reactions of GaP and GaAs with Au contacts.

Weizer, Victor G.↗

NASA NTRS1991

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Weizer, Victor G.↗