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At least 559 records · Page 31

Influence of structural defects on charge density waves in 1T-TaS2

Abstract The influence of intrinsic defects of 1T-TaS 2 on charge density waves (CDWs) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to a single CDW site, with a single exception which effectively behaves as a dopant, leading to band-bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved in STS mapping. Our results indicate modulation of the Mott band gap commensurate with the CDW and breaking of the three-fold symmetry of electronic states. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure, focusing on both sulfur vacancy and oxygen-sulfur substitution. The sulfur vacancy system, characterized with a metallic behavior, is identified as the origin of one of the experimentally observed defects. Additionally, the effect of oxidation of 1T-TaS 2 depends on the substitution site, leading to the heterogeneity of electronic properties.

Chemistry↗

Exploring driving forces for length growth in graphene nanoribbons during chemical vapor deposition of hydrocarbons on Ge(0 0 1) via kinetic Monte Carlo simulations

Graphene grown slowly on Ge(0 0 1) using chemical vapor deposition of hydrocarbons leads to high-aspect ratio graphene nanoribbons with smooth edges and a technologically relevant band gap at room temperature; however, the driving forces leading to one-dimensional growth of such graphene crystals are not well understood. Here, we combine a lattice kinetic Monte Carlo approach based on steps in graphene growth and experimental measurements to study the growth of graphene nanoribbons via chemical vapor deposition on Ge(0 0 1). To identify potential reasons for growth of graphene as anisotropic ribbons, we study the impact of anisotropy in various growth parameters on the resulting graphene crystals. Comparing our model with experimental measurements indicates that anisotropy in the stabilization of a graphene precursor species bound to the graphene edge is the most likely reason why high aspect ratio graphene ribbons with smooth edges grow on Ge(0 0 1). Using the growth model developed here, we reproduce experimental trends in the synthesis of graphene nanoribbons on Ge(001) and arrive at an intuitive picture for their growth. These insights shed light on the driving forces governing this highly anisotropic regime of crystal growth.

36 MATERIALS SCIENCE↗

Electronic and optical properties of plutonium metal and oxides from Reflection Electron Energy Loss Spectroscopy

Reflection Electron Energy Loss Spectra (REELS) have been acquired on plutonium δ-Pu-Ga alloys, α-Pu 2 O 3 and PuO 2 . The position of the peaks attributable to the Pu 6p excitation can be used as ‘fingerprint’ for these species. X-ray Photoelectron Spectroscopy has been used to aid interpretation of the REELS spectra. The band gap of PuO 2 was determined from the onset of the energy loss in the REELS spectrum. The REELS data have been evaluated within the dielectric response theory by means of the QUEELS-ε(k, w)-REELS software. In this work, the Energy Loss Function, dielectric function, refractive index and extinction coefficient for these materials have been determined in the ultraviolet and extreme ultraviolet range and are compared to previously reported results.

36 MATERIALS SCIENCE↗

Electronic structure of Alq 3 and Liq using soft X-ray spectroscopy and density functional theory calculation

We show the electronic structure of aluminum tris-8-hydroxyquinoline (Alq 3 ) and 8-hydroquinolatolithium (Liq) was investigated using a combination of X-ray emission spectroscopy (XES), X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy (XPS), and spectral simulation with density functional theory. The chemical bonding states of Alq 3 and Liq were analyzed using XPS core-level spectra. The band gaps of Alq 3 and Liq were measured by combining the XAS and XES results. Additionally, resonant and non-resonant XES were used to measure the density of states for O sites in the molecules.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties

Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here in this paper, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the doping locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, and quantum topological properties.

36 MATERIALS SCIENCE↗

Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

42 ENGINEERING↗

Enhanced dielectric insulation of biaxially oriented high temperature polyester films for capacitive energy storage

Biaxially oriented polypropylene (BOPP) films are widely used in dielectric capacitors due to their ultralow loss, high breakdown strength, and long lifetime. However, their poor temperature tolerance limits applications in emerging high-temperature environments such as wide-band-gap power electronics in electric vehicles. Here, we report significantly enhanced dielectric insulation properties of biaxially oriented poly(ethylene 2,6-naphthalate) (BOPEN) films compared to biaxially oriented poly(ethylene terephthalate) (BOPET) films, despite their similar semicrystalline morphologies. BOPEN exhibits higher DC and AC breakdown strengths and markedly extended lifetimes at elevated temperatures. For instance, at 120 °C, the DC Weibull lifetime of BOPEN exceeded that of BOPET by over two orders of magnitude and even surpassed that of BOPP. Through comprehensive analyses—leakage current, electric displacement-electric field loops, and thermally stimulated depolarization current—we attribute this superior performance to suppressed homocharge injection and conduction losses, enabled by the rigid naphthalene-based backbone in BOPEN that reduces dipole mobility and chain polarity. These findings underscore the potential of BOPEN as a next-generation polymer dielectric for high-temperature capacitor applications.

25 ENERGY STORAGE↗

Metal hydride composition-derived parameters as machine learning features for material design and H 2 storage

Though hydrogen is a promising energy carrier for a green future, many challenges persist. One is the difficulty in engineering storage solutions, with metal hydrides being a leading contender among solid-state strategies. To facilitate efficient searching of candidate materials, ridge regression, simple decision trees, random forest ensembles, and gradient boosting ensembles were employed to predict the energy of formation, with the random forest ensemble resulting in the lowest test set error. First, two public databases, Materials Project and HydPark, were searched for metal hydrides. Feature engineering was performed before the models were developed, resulting in electronegativity, density, atomic density, d-character, f-character, band gap, hydrogen weight fraction, magnetization, temperature, and pressure being retained. The models were then benchmarked by the lowest test error before a random forest ensemble was used to populate entries missing energy of formation. Furthermore, all were then scored by hydrogen storage capacity and energy of formation suitability. Readily available features including several derived from only the chemical formula which were found to be highly predictive. and so are promising for high-throughput screening of arbitrary novel hydride formulations and blends for thermodynamic feasibility.

25 ENERGY STORAGE↗

Design of biphenylene-derived tunable dirac materials

The exploration of carbon allotropes has unveiled a series of two-dimensional (2D) materials with unique electronic and mechanical properties, yet the need for stable structures with tailored electronic properties persists. Here, in this study, we introduce a new class of 2D carbon allotropes derived from the biphenylene network (BPN), incorporating acetylenic linkages to tune their structural and electronic characteristics. Through density functional theory calculations, we identified ten novel BPN-derived structures that exhibit both energetic and dynamic stability, confirmed by cohesive energy and phonon spectrum analyses. Among them, BPN-02 and BPN04 are metallic, featuring critically-tilted type-III Dirac cones under ~ 5 % biaxial strain, while BPN-22 is a semiconductor with a band gap of 0.95 eV and exhibits highly anisotropic carrier mobility. Additionally, these structures demonstrate significant anisotropy in their elastic properties, further distinguishing them from other 2D carbon materials like graphene. Our findings suggest that these novel BPN-based structures have strong potential for next-generation electronic and optoelectronic applications, providing new avenues for the design and synthesis of advanced carbon materials.

2D carbon allotropes↗

Bio-inspired non self-similar hierarchical elastic metamaterials

Hierarchy provides unique opportunities for the design of advanced materials with superior properties that arise from architecture, rather than from constitutive material response. Contrary to the quasi-static regime, where the potential of hierarchy has been largely explored, its role in vibration mitigation and wave manipulation remains elusive. So far, the majority of the studies concerning hierarchical elastic metamaterials have proposed a self-similar repetition of a specific unit cell at multiple scale levels, leading to the activation of the same bandgap mechanism at different frequencies. On the contrary, here, we show that by designing non self-similar hierarchical geometries allows us to create periodic structures supporting multiple, highly attenuative and broadband bandgaps involving (independently or simultaneously) different scattering mechanisms, namely, Bragg scattering, local resonance and/or inertial amplification, at different frequencies. The type of band gap mechanism is identified and discussed by examining the vibrational mode shapes and the imaginary component of the wavenumber in the dispersion diagram of the unit cell. Finally, we also experimentally confirm this by performing measurements in the lowest frequency regime on a 3D printed structure. Hierarchical design strategies may find application in vibration mitigation for civil, aerospace and mechanical engineering.

36 MATERIALS SCIENCE↗

Strain induced electronic structure, and magnetic and structural properties in quaternary Heusler alloys ZrRhTiZ (Z = Al, In)

In this work, electronic structure, and magnetic and structural properties of quaternary Heusler alloys ZrRhTiZ (Z = Al, In) have been analyzed from first principles calculations. The ferromagnetic ground state and thermodynamical stability of these compounds are supported by relative total energies, and by derived formation and cohesive energies, respectively. The investigated Curie temperatures of the compounds exceed room temperature indicating that these compounds are promising candidates for beyond room temperature spintronics and magneto-electronics applications. Both compounds follow the Slater-Pauling 18 electron rule and exhibit half-metallic ferromagnetic behavior with magnetic moments of 2 μB with 100% spin polarization in one spin channel at the Fermi-level. The effect of uniform strain on half-metallicity of these compounds inverts the band gap from one spin channel to another spin channel with a mixed spin (magnetic moment) regime that can be mapped to an exchange bias like effect observed in some of the magnetic Heusler compounds. The half metallic ferromagnetic behavior is retained within –2 to 2% strain contrasting with the anomalous spin flip in –1% and 1% strain in ZrRhTiZ (Z = Al, In).

36 MATERIALS SCIENCE↗

Intrinsic scintillation performance & europium concentration effects in RbSr 2 I 5 and RbSr 2 Br 5 scintillators

Scintillators play crucial roles in homeland security applications like gamma ray spectroscopy and high energy X-ray radiography. For promising new scintillators, fine-tuning the luminescent dopant concentration is one avenue to further improve their performance and tailor their properties. In this work, the effects of europium dopant concentrations on the crystal growth, luminescence and scintillation properties of RbSr 2 Br 5 and RbSr 2 I 5 crystals was investigated. Nine transparent 7 mm diameter single crystals were grown via the Vertical Bridgman method. Here, the optical band gap of RbSr 2 Br 5 was 5.9 eV and that of RbSr 2 I 5 was 4.7 eV. High scintillation performance was achieved with a relatively low europium concentration of 1 mol%. For both RbSr 2 Br 5 :Eu and RbSr 2 I 5 :Eu crystals, light yield of 60–90,000 ph/MeV, energy resolution 2.8–4.0 % at 662 keV, and X-ray afterglow 0.79–1.5 % at 2 ms were obtained.

36 MATERIALS SCIENCE↗

Thermal conductivity suppression in uranium-doped thorium dioxide due to phonon-spin interactions

In this work, impact of low level of uranium (U) atom substitution on thermal conductivity of thorium dioxide (ThO 2 ) is investigated. ThO 2 is an electronic insulator with a wide optical band-gap and no unpaired electrons whose thermal transport is governed by phonons. U-substitution introduces unpaired f-electrons resulting in paramagnetic behavior of U-ThO 2 at room temperature, which significantly suppresses its thermal conductivity. A single crystal of U-ThO 2 with graded composition of U is grown using a hydrothermal synthesis method, and thermal conductivity measurements are performed in regions with uniform composition of U at levels of 0%, 6%, 9% and 16%. Measured thermal conductivity profiles over 77–300 K temperature range are analyzed using an analytical expression for phonon-mediated thermal transport based on Klemens-Callaway model. Temperature dependent thermal conductivity is found to deviate significantly from the Rayleigh scattering trend expected for a simple substitutional point defect with a small perturbation to mass and interatomic forces. With the resonant scattering term, observed large suppression of thermal conductivity at low temperatures can be closely reproduced. Additionally, the extracted phonon-spin coupling constants imply a nonlinear relation of phonon-spin interaction intensity with respect to U doping percentage. Our study reveals how phonon-spin scattering contributed by unpaired f-electrons in U atoms influences thermal transport in the U-ThO 2 system.

36 MATERIALS SCIENCE↗

Effect of Ni deposition on CrI 3 monolayer: First-principles study

In our recent experimental work, we demonstrated that Ni thin film deposition can be used to tune the surface magnetic states in bulk CrI 3 . Here, we present the results of a computational study of Ni deposition on a CrI 3 monolayer. In particular, we compare structural, electronic, and magnetic properties of three different systems: a pristine CrI 3 monolayer, a CrI 3 monolayer with partial Ni coverage, and a CrI 3 monolayer with full Ni coverage. The corresponding cells used in our calculations are Cr 2 I 6 , Cr 2 I 6 Ni 1 , and Cr 2 I 6 Ni 3 . In Cr 2 I 6 Ni 1 , the Ni atom is positioned over the hollow site, which corresponds to the lowest energy configuration. In Cr 2 I 6 Ni 3 , the three Ni atoms are positioned over the single hollow site, and over the two Cr sites. Our calculations indicate that the partial coverage of CrI 3 monolayer with Ni retains the semiconducting nature of the parent compound, but results in a strong reduction of the energy band gap. At the same time, the full coverage of CrI 3 monolayer with Ni results in a metallic transition, with a highly spin-polarized (possibly half-metallic) electronic structure. The magnetic alignment of the CrI 3 monolayer with the deposited Ni is ferrimagnetic, due to the anti-aligned magnetic moments of Cr and Ni atoms. While the partial coverage of the CrI 3 monolayer with Ni has a moderate impact on the lattice parameter of the parent compound, full coverage by Ni results in a significant increase of the lattice constant. For both partial and full coverages, the lowest energy configuration corresponds to the Ni atoms being approximately aligned with the out-of-plane coordinate of the surface iodine layer. In addition, in the full coverage mode, the Cr layer exhibits a significant shift away from the Ni atoms, effectively “detaching” the Ni / I atomic layer from the rest of the cell.

2D magnetism↗

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

This paper presents a large-scale ab initio simulation study of amorphous silicon hydride (a-Si 1-x H x ) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by combining accelerated molecular dynamics (MD) simulations with first-principles density-functional calculations. The accelerated MD scheme relied on classical metadynamics, which enabled the development of 2500+ high-quality structural models of a-Si 1-x H x , with system sizes ranging from 150 to 6000 atoms and hydrogen concentrations vary from 6 to 20 at. %. The resulting amorphous networks were found to be completely free from any coordination defects and that they all exhibited a pristine band-gap in their electronic spectrum. The microstructural properties of hydrogen distributions were examined with an emphasis on the presence of isolated and clustered environments of hydrogen atoms. The results were compared with experimental data obtained from X-ray diffraction, infrared spectroscopy and nuclear magnetic resonance studies.

36 MATERIALS SCIENCE↗

Improving Efficiency and Stability of Perovskite Solar Cells Enabled by A Near-Infrared-Absorbing Moisture Barrier

Simultaneously improving device efficiency and stability is the most important issue in perovskite solar cell (PSC) research. Here, we strategically introduce a multi-functional interface layer (MFIL) with integrated roles of: (1) electron transport, (2) moisture barrier, (3) near-infrared photocurrent enhancement, (4) trap passivation, and (5) ion migration suppression to enhance the device performance. The narrow-band-gap non-fullerene acceptor, Y6, was screened out to replace the most commonly used PCBM in the inverted PSCs. A significantly improved power conversion efficiency of 21.0% was achieved, along with a remarkable stability (up to 1,700 h) without encapsulation under various external stimuli (light, heat, and moisture). Furthermore, systematic studies of the molecular orientation or passivation and the charge carrier dynamics at the interface between perovskite and MFIL were presented. These results offer deep insights for designing advanced interlayers and establish the correlations between molecular orientation, interface molecular bonding, trap state density, non-radiation recombination, and the device performance.

14 SOLAR ENERGY↗

Overcoming Shockley-Queisser limit using halide perovskite platform?

The Intergovernmental Panel on Climate Change (IPCC) reveals that the global temperature has reached its highest level in the last 2,000 years. Development of emissions-free electrification technologies such as photovoltaics (PV) can be a great paramountcy to balance the climate pressure and the growing demand on energy. Although many PV technologies have been demonstrated so far, all the single-junction PVs are still subjected to the well-known efficiency cap of the Shockley-Queisser limit (33.7%), with most of the absorbed solar energy lost into heat. In parallel to delicate system-level designs, such as tandem, multi-junction, photothermal, or up-/down-conversion, we ask the question about the feasibility of overcoming the SQ limit at material level. In this study, we first dissect the origin of the limit, and then, by using the emerging perovskite as the platform, we list several potential pathways (i.e., hot carrier, multi-exciton generation, intermediate band gap, and ferroelectricity that have been newly discovered or can be introduced in the perovskite) to the roadmap of exceeding the SQ limit.

14 SOLAR ENERGY↗

Surface engineering with oxidized Ti 3 C 2 T x MXene enables efficient and stable p-i-n-structured CsPbI 3 perovskite solar cells

All-inorganic CsPbI 3 perovskite has a near-ideal band gap, high thermal stability, and simple material composition, thus presenting a promising option for developing perovskite/Si tandem solar cells. However, CsPbI 3 undergoes a rapid phase transition under exposure to moisture and exhibits a significant performance gap relative to other perovskite compounds, particularly in the p-i-n structure favored for perovskite/Si tandems. In this work, we demonstrate highly efficient and stable p-i-n-structured CsPbI 3 perovskite solar cells by surface engineering the CsPbI 3 layer with oxidized Ti 3 C 2 T x MXene (OMXene) nanoplates via spray coatings. OMXene provides a physical barrier against moisture and improves charge separation at the perovskite-electron transporting layer interface via an enhanced electric field. Consequently, we demonstrated CsPbI 3 /OMXene-based p-i-n devices with efficiencies of 19.69% for 0.096-cm 2 cells and 14.64% for 25-cm 2 minimodules. The encapsulated minimodule showed good stability, retaining ~85% of the initial efficiency under simultaneous damp heat (85°C/85% relative humidity) and 1-sun light soaking for over 1,000 h.

14 SOLAR ENERGY↗