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At least 559 records · Page 31

Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce the power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium (Cr) is proven to be an effective mechanism for creating an additional part of the SHE, named the fluctuation spin Hall effect. Further, the SHA is significantly enhanced when the temperature approaches the Néel temperature (T N ) of Cr and has a peak value of -0.36 near T N . This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin–orbit torque materials. This study demonstrates the critical spin fluctuation as a prospective way to increase the SHA and enriches the AFM material candidates for spin–orbitronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In situ atomic force microscope study of high-temperature untwinning surface relief in Mn-Fe-Cu antiferromagnetic shape memory alloy

The N-type untwinning surface relief associated with the fcc {r_reversible} fct martensitic transformation (MT) was observed in the Mn{sub 81.5}Fe{sub 14.0}Cu{sub 4.5} antiferromagnetic high-temperature shape memory alloy (SMA) by in situ atomic force microscopy. The measured untwinning relief angles ({theta}{sub {alpha}} Double-Vertical-Line {theta}{sub {beta}}) at the ridge and at the valley were different, and both angles were less than the conventional values. The surface relief exhibited good reversibility during heating and cooling because of the crystallographic reversibility of thermal-elastic SMAs. Untwinning shear was proposed as the main mechanism of the N-type surface relief. The order of the reverse MT was discussed based on the experimental measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0{sub 3}-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V{sub 3}Si and V{sub 3}Ge, half-metallic antiferromagnets of Mn{sub 3}Al and Mn{sub 3}Ga, half-metallic ferrimagnets of Mn{sub 3}Si and Mn{sub 3}Ge, and a spin gapless semiconductor of Cr{sub 3}Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

36 MATERIALS SCIENCE↗

Exchange bias beyond the superparamagnetic blocking temperature of the antiferromagnet in a Ni-NiO nanoparticulate system

We report magnetic and exchange bias studies on Ni-NiO nanoparticulate systems synthesized by a two-step process, namely, chemical reduction of a Ni salt followed by air annealing of the dried precipitate in the temperature range 400–550 °C. Size of Ni and NiO crystallites as estimated from X–ray diffraction line broadening ranges between 10.5–13.5 nm and 2.3–4 nm, respectively. The magneto-thermal plots (M-T) of these bi-magnetic samples show a well developed peak in the vicinity of 130 K. This has been identified as the superparamagnetic blocking temperature “T{sub B}” of NiO. Interestingly, all samples exhibit exchange bias even above their respective NiO blocking temperatures, right up to 300 K, the maximum temperature of measurement. This is in contrast to previous reports since exchange bias requires the antiferromagnetic NiO to have a stable direction of its moment in order to pin the ferromagnet (Ni) magnetization, whereas such stability is unlikely above T{sub B} since the NiO is superparamagnetic, its moment flipping under thermal activation. Our observation is elucidated by taking into account the core-shell morphology of the Ni-NiO nanoparticles whereby clustering of some of these nanoparticles connects their NiO shells to form extended continuous regions of NiO, which because of their large size remain blocked at T > T{sub B}, with thermally stable spins capable of pinning the Ni cores and giving rise to exchange bias. The investigated samples may thus be envisaged as being constituted of both isolated core-shell Ni-NiO nanoparticles as well as clustered ones, with T{sub B} denoting the blocking temperature of the NiO shell of the isolated particles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A site-selective antiferromagnetic ground state in layered pnictide-oxide BaTi{sub 2}As{sub 2}O

The electronic and magnetic properties of BaTi{sub 2}As{sub 2}O have been investigated using both the first-principles and analytical methods. The full-potential linearized augmented plane-wave calculations show that the most stable state is a site-selective antiferromagnetic (AFM) metal with a 2×1×1 magnetic unit cell containing two nonmagnetic Ti atoms and two other Ti atoms with antiparallel moments. Further analysis to Fermi surface and spin susceptibility shows that the site-selective AFM ground state is driven by the Fermi surface nesting and the Coulomb correlation. Meanwhile, the charge density distribution remains uniform, suggesting that the phase transition at 200 K in experiment is a spin-density-wave transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiferromagnetic ordering in NdAuGe compound

The compound NdAuGe was investigated by means of electrical resistivity, ρ(T), magnetic susceptibility, χ(T), magnetization, σ(μ{sub 0}H), and specific heat, C{sub p}(T), measurements. Powder X-ray diffraction studies confirm a hexagonal LiGaGe-type structure with space group P6{sub 3}mc (No. 186). ρ(T) data show normal metallic behaviour and a tendency toward saturation at higher temperatures. The low temperature ρ(T) data indicate a phase transition around 3.8 K. The low field dc χ(T) data show an antiferromagnetic anomaly associated with a Néel temperature at T{sub N} = 3.7 K close to the phase transition observed in ρ(T) results. At higher temperatures, χ(T) follows the paramagnetic Curie-Weiss behaviour with an effective magnetic moment μ{sub eff}=3.546(4) μ{sub B} and a paramagnetic Weiss temperature of θ{sub p}=−6.1(4) K. The value obtained for μ{sub eff} is close to the value of 3.62 μ{sub B} expected for the free Nd{sup 3+}-ion. σ(μ{sub 0}H) shows a linear behaviour with applied field up to 3 T with an evidence of metamagnetic behaviour above 3 T. C{sub p}(T) confirms the magnetic phase transition at T{sub N} = 3.4 K. The 4f-electron specific heat indicates a Schottky-type anomaly around 16.5 K with energy splitting Δ{sub 1}=25.8(4) K and Δ{sub 2}=50.7(4) K of the Nd{sup 3+} (J = 9/2) multiplet, that are associated with, respectively, the first and second excited states of the Nd{sup 3+}-ion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Charge control of antiferromagnetism at PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} interface

The interfacial spin state of the multiferroic heterostructure PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} and its dependence on ferroelectric polarization is investigated with magnetic second-harmonic generation at 78 K. The spin alignment of Mn ions in the first unit cell layer at the heterointerface can be tuned from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. Multiple domains of both phases coexist as the ferroelectric polarization is switched. The results will help promote the development of new interface-based functionalities and device concepts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Antiferromagnetic resonance excitation by terahertz magnetic field resonantly enhanced with split ring resonator

Excitation of antiferromagnetic resonance (AFMR) in a HoFeO{sub 3} crystal combined with a split ring resonator (SRR) is studied using terahertz (THz) electromagnetic pulses. The magnetic field in the vicinity of the SRR is induced by the incident THz electric field component and excites spin oscillations that correspond to the AFMR, which are directly probed by the Faraday rotation of the polarization of a near-infrared probe pulse. The good agreement of the temperature-dependent magnetization dynamics with the calculation using the two-lattice Landau-Lifshitz-Gilbert equation confirms that the AFMR is excited by the THz magnetic field, which is enhanced at the SRR resonance frequency by a factor of 20 compared to the incident magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L1{sub 0}-MnGa/Co{sub 2}FeAl Heusler bilayers

In this work, we report a tailorable exchange coupling (J{sub ex}) at the Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl interface, where Mn{sub 62}Ga{sub 38} and Co{sub 2}FeAl alloys are tetragonal Heusler alloy with high perpendicular magnetic anisotropy and typical cubic Heusler alloy with soft magnetism, respectively. As the post annealing temperature (T{sub a}) is lower than 375 °C, the J{sub ex} is ferromagnetic with strength controllable from 7.5 to 0.5 erg/cm{sup 2}. Interestingly, as T{sub a} increases higher than 400 °C, an antiferromagnetic J{sub ex} of −5.5 erg/cm{sup 2} is observed. The ferromagnetic/antiferromagnetic transition is further evidenced by the spin dependent transport property of the magnetic tunnel junctions with Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl as electrode. Based on structure characterization, the variation of J{sub ex} during annealing is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tunable negative thermal expansion related with the gradual evolution of antiferromagnetic ordering in antiperovskite manganese nitrides Ag{sub 1−x}NMn{sub 3+x} (0 ≤ x ≤ 0.6)

The thermal expansion and magnetic properties of antiperovskite manganese nitrides Ag{sub 1−x}NMn{sub 3+x} were reported. The substitution of Mn for Ag effectively broadens the temperature range of negative thermal expansion and drives it to cryogenic temperatures. As x increases, the paramagnetic (PM) to antiferromagnetic (AFM) phase transition temperature decreases. At x ∼ 0.2, the PM-AFM transition overlaps with the AFM to glass-like state transition. Above x = 0.2, two new distinct magnetic transitions were observed: One occurs above room temperature from PM to ferromagnetic (FM), and the other one evolves at a lower temperature (T{sup *}) below which both AFM and FM orderings are involved. Further, electron spin resonance measurement suggests that the broadened volume change near T{sup *} is closely related with the evolution of Γ{sup 5g} AFM ordering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Paramagnetic to antiferromagnetic transition in epitaxial tetragonal CuMnAs (invited)

In this paper, we use neutron scattering and electrical transport to investigate the paramagnetic to antiferromagnetic phase transition in tetragonal CuMnAs films on GaP(001). X-ray diffraction and cross-sectional transmission electron microscopy measurements show that the films are chemically ordered with high structural quality. The temperature dependence of the structurally forbidden (100) neutron scattering peak is used to determine the Néel temperature, T{sub N}. We then demonstrate the presence of a clear peak in the temperature derivative of the resistivity around T{sub N}. The effect of disorder-induced broadening on the shape of the peak is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optical conductivity of cuprates in the pseudogap state: Yang-Rice-Zhang model and antiferromagnetic spin waves

In the underdoped regime of the cuprate phase diagram, the modified version of the Resonance Valence Bond (RVB) model by Yang, Rice and Zhang (YRZ) captures the strong electronic correlation effects very well as corroborated by the ARPES and many other experiments. However, under a non-equilibrium transport setting, YRZ says nothing about the scattering mechanisms of the charge carriers. In the present investigation we include, in a very simplified way, the scattering of charge carriers due to antiferromagnetic type spin waves (ASW). The effect of ASW excitations on conductivity has been studied by changing combined life times of the included process. It has been found that there is a qualitative change in the conductivity in the right direction. The theoretical conductivity reproduces qualitatively the experimental one.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Half-metallic antiferromagnetism in double perovskite BiPbCrCuO{sub 6}

The electronic structure and magnetic properties of BiPbCrCuO{sub 6} double perovskite are investigated based on first-principles density functional calculations with generalized gradient approximation (GGA) and GGA incorporated with Coulomb correlation interaction U (GGA + U). The results suggest the half-metallic (HM) and antiferromagnetic (AFM) properties of BiPbCrCuO{sub 6} double perovskite. The HM-AFM property of the double perovskite is caused by the double-exchange mechanism between neighboring Cr{sup 5+}(t{sub 2g}{sup 1}↓) and Cu{sup 2+}(t{sub 2g}{sup 3}↑t{sub 2g}{sup 3}↓e{sub g}{sup 2}↑e{sub g}↓) via the intermediate O{sup 2−}(2s{sup 2}2p{sup 6}) ion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Role of the antiferromagnetic pinning layer on spin wave properties in IrMn/NiFe based spin-valves

Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) type samples basically consisting of two 5 nm-thick NiFe layers (separated by a Cu spacer of 5 nm), differently biased through the interface exchange coupling with an antiferromagnetic IrMn layer. Three samples were investigated: a reference SV sample, without IrMn (reference); one sample with an IrMn underlayer (10 nm thick) coupled to the bottom NiFe film; one sample with IrMn underlayer and overlayer of different thickness (10 nm and 6 nm), coupled to the bottom and top NiFe film, respectively. The exchange coupling with the IrMn, causing the insurgence of the exchange bias effect, allowed the relative orientation of the NiFe magnetization vectors to be controlled by an external magnetic field, as assessed through hysteresis loop measurements by magneto-optic magnetometry. Thus, BLS spectra were acquired by sweeping the magnetic field so as to encompass both the parallel and antiparallel alignment of the NiFe layers. The BLS results, well reproduced by the presented theoretical model, clearly revealed the combined effects on the spin dynamic properties of the dipolar interaction between the two NiFe films and of the interface IrMn/NiFe exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Oxygen-induced immediate onset of the antiferromagnetic stacking in thin Cr films on Fe(001)

We investigated the magnetic coupling of ultra-thin Cr films grown at 600 K on a Fe(001)-p(1 × 1)O substrate by means of spin-polarized photoemission spectroscopy. Our findings show that the expected antiferromagnetic stacking of the magnetization in Cr(001) layers occurs right from the first atomic layer at the Cr/Fe interface. This is at variance with all previous observations in similar systems, prepared in oxygen-free conditions, which always reported on a delayed onset of the magnetic oscillations due to the occurrence of significant chemical alloying at the interface, which is substantially absent in our preparation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of L1{sub 2} ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

Two series of samples of single-layer IrMn and IrMn/FePd bilayer films, deposited on a single-crystal MgO substrate at different IrMn deposition temperatures (T{sub s} = 300–700 °C), were investigated using magnetron sputtering. L1{sub 2} ordering was revealed for the 30 nm-thick IrMn epitaxial (001) films with T{sub s} ≥ 400 °C, determined by synchrotron radiation x-ray diffractometry (XRD). XRD results also provide evidence of the epitaxial growth of the IrMn films on MgO substrate. Increasing T{sub s} from 400 to 700 °C monotonically increases the ordering parameter of L1{sub 2} phases from 0.17 to 0.81. An in-plane exchange bias field (H{sub eb}) of 22 Oe is obtained in a 10 nm-thick FePd film that is deposited on the disordered IrMn films. As the L1{sub 2} ordering of the IrMn layers increases, the H{sub eb} gradually decreases to 0 Oe, meaning that the exchange bias behavior vanishes. The increased surface roughness, revealed by atomic force microscopy, of the epitaxial IrMn layers with increasing T{sub s} cannot be the main cause of the decrease in H{sub eb} due to the compensated surface spins regardless of the disordered and ordered (001) IrMn layers. The change of antiferromagnetic structure from the A1 to the L1{sub 2} phase was correlated with the evolution of H{sub eb}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nonlinear magnetoelectric effect and magnetostriction in piezoelectric CsCuCl{sub 3} in paramagnetic and antiferromagnetic states

The direct nonlinear magnetoelectric (ME) effect and the magnetostriction of piezoelectric CsCuCl{sub 3} single crystals were comprehensively studied over a wide temperature range in stationary magnetic fields of up to 14 T. The direct nonlinear ME effect measurements were also performed in pulsed magnetic fields up to 31 T, at liquid helium temperature in the antiferromagnetic (AF) state for the crystallographic direction in which effect has the maximum value. The nonlinear ME effect was quadratic in the paramagnetic state for the whole range of magnetic fields. In the AF state the phase transition between different configurations of spins manifested itself as plateau-like peculiarity on the nonlinear ME effect. The nonlinear ME effect was saturated by the phase transition to the spin-saturated paramagnetic state. Two contributions to the nonlinear ME effects in CsCuCl{sub 3} were extracted from the experimental data: the intrinsic ME effect originated from the magnetoelectric interactions, and the extrinsic one, which resulted from a magnetostriction-induced piezoelectric effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Micromagnetic analysis of current-induced domain wall motion in a bilayer nanowire with synthetic antiferromagnetic coupling

We demonstrate current-induced domain wall motion in bilayer nanowire with synthetic antiferromagnetic (SAF) coupling by modeling two body problems for motion equations of domain wall. The influence of interlayer exchange coupling and magnetostatic interactions on current-induced domain wall motion in SAF nanowires was also investigated. By assuming the rigid wall model for translational motion, the interlayer exchange coupling and the magnetostatic interaction between walls and domains in SAF nanowires enhances domain wall speed without any spin-orbit-torque. The enhancement of domain wall speed was discussed by energy distribution as a function of wall angle configuration in bilayer nanowires.

77 NANOSCIENCE AND NANOTECHNOLOGY↗