SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
This study proposes constant-voltage charging as a promising fast-charging protocol and reveals the origin of capacity degradation in constant-voltage charging.
The magnetoelectric behavior of epitaxial Fe–Ga microstructures on top of a (001)-oriented PMN–PT piezoelectric substrate is imaged with magnetic X-ray microscopy. Additionally, the micron-scale strain distribution in PMN–PT is characterized by X-ray microdiffraction and examined with respect to the results of the Fe–Ga magnetoelectric switching. The magnetic reorientation of Fe–Ga is found to be strongly correlated with size, shape, and crystallographic orientation of the microstructures. In the case of square-shaped structures, size dictates the influence of the strain distribution on both the initialization of the ground state and on the magnetic reorientation during application of voltage. On the other hand, elliptical microstructures demonstrate completely different magnetic responses depending on the relative orientation of their long axis with respect to the crystallographic directions of the PMN–PT. This study demonstrates that engineering the behavior of highly magnetostrictive epitaxial microdevices is possible. It further elucidates that voltage-induced actuation can be largely tuned to achieve the desired type of magnetic switching ranging from vortex circulation reversal, domain wall motion, to a large rotation of magnetization. Because of the outstanding properties of the investigated material system, the reported findings are expected to be of great interest for the realization of next-generation energy-efficient magnetic memory and logic devices.
Lithium- and manganese-rich oxides are of interest as lithium-ion battery cathode materials as Mn is earth abundant, low cost, and can deliver high capacity. Herein, a high entropy strategy was used to prepare Mn rich high entropy oxide (HEO) materials by including four additional metals (Ni, Co, Fe and Al) in the compositions using a mild co-precipitation method. Two HEOs (Li x Ni 0.1 Mn 0.6 Co 0.1 Al 0.1 Fe 0.1 O y , where x = 1.5 for HEO-L and x = 0.5 for HEO-H) with layered and spinel-layered hybrid structures were investigated where the morphology, elemental composition, structure, atomic level phase distribution, and electrochemistry were determined. The HEO-L samples involve a Li 2 TMO 3 layered structure with ~39% stacking faults. HEO-H is a hybrid structure comprised of 80 wt% spinel and 20 wt% LiMO 2 layered structure. The high entropy manganese-rich HEO-L showed higher capacity and 93% retention of the average voltage after 100 cycles while HEO-H showed higher capacity retention and near 100% average voltage retention. Finally, operando X-ray absorption spectroscopy revealed that the Ni, Co, and Mn are redox active in both materials while the Fe center remains at the Fe 3+ oxidation state throughout cycling, where the changes in the oxidation states for both materials during discharge were consistent with the delivered electrochemical capacity rationalizing the observed electrochemistry.
Fluctuations refer to inhomogeneity in the distribution of donors and acceptors at the nanometer scale and occur in many compound solar cell materials such as Cu(In,Ga)Se 2 , Cu 2 ZnSn(S,Se) 4 , and CdSe x Te 1-x . In this work, numerical simulations show that these fluctuations produce not only electrostatic potential variation, but also, local changes in the carrier density and effective bandgap. For a CdSe x Te 1-x absorber doped with arsenic, simulations and cathodoluminescence data within single grains demonstrate how donor and acceptor densities—consistent with capacitance-voltage and secondary-ion mass-spectrometry data—produce tails in photoluminescence, quantum efficiency, and absorption measurements. Using multiple theoretical approaches, we demonstrate that the fluctuations can hinder expected performance gains from increased carrier density, and we describe the significant open-circuit voltage deficit observed in the CdSe x Te 1-x :As solar technology. Our results demonstrate that it is critical to characterize and reduce carrier compensation to realize a higher efficiency.
This manuscript reports the experimental study of a novel vacuum high-voltage (HV) feedthrough geometry with a recessed anode triple junction (ATJ) relevant to large-scale pulsed power systems. It is shown experimentally that introducing a vacuum gap between the insulator–anode interface and recessing the ATJ farther away from the cathode triple junction significantly enhances high voltage (HV) vacuum surface flashover hold-off. The results for “first pulse” and “consecutive pulse” tests are reported. The physical mechanisms contributing to the electrical failure of this feedthrough geometry appear to be unique to this geometry. These findings show the potential to allow for HV vacuum surface flashover geometries with significantly improved electrical characteristics.
In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10 15 neq/cm 2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.
Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green InGaN-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the InGaN QW and GaN cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.
For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.
Local current-voltage characteristics for low-dimensional transition-metal dichalcogenides (LDTMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments, are of fundamental interest and can be useful for advanced applications. Most of the existing models either have limited applicability for complex-shaped LDTMDs (e.g., those based on the Simmons approach) or require solving of an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on the Tersoff approach). Using a serial expansion of the Tersoff formulas, we propose a flexible method to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We establish a set of key physical parameters, which characterize the tunneling current of a STM-probe–sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different numbers of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around the Fermi level, which allows us to gain insight into the local band structure of LDTMDs. The reconstructed LDOS reveal pronounced size effects for the single-layer, two-layer, and three-layer MoS 2 nanoflakes, which we relate to the low dimensionality and strong bending or corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach, allowing LDOS reconstruction, will be of critical interest for the quantitative description of STM experiments and also of use to better understand the microscopic physical aspects of the surface, strain, and bending contributions to the LDTMDs’ electronic properties.
Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.
We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm 3 Fe 5 O 12 /W and Tm 3 Fe 5 O 12 /Pt) to corresponding electrically driven transverse resistances at and above room temperature. We find for Tm 3 Fe 5 O 12 /W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm 3 Fe 5 O 12 /Pt the ratio of the electrically driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. Here, we ascribe this difference to a proximity-induced magnetic layer at the Tm 3 Fe 5 O 12 /Pt interface.
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.
A Lyapunov energy function based circulating current reduction scheme for a back to back modular multilevel converter based system for a microgrid application has been proposed in this digest. In order to ensure no circulating or zero sequence currents within the modules, the dynamics from one leg of the converter to the other are evaluated. A Lyapunov energy function is then developed and utilizing the circulating current dynamics of the converter the overall control law is implemented. In this digest a decentralized hierarchical control architecture has been implemented for the main current control; where the outer loop or the central controller implements the higher level grid interconnection functions as per IEEE 1547-2018 standards and the inner loop based on synchronous reference frame implements the current control architecture. The inner loops' outputs are the commanded converter voltages either on either side which are augmented by the Lyapunov energy function based circulating current suppression architecture. To evaluate the efficacy of the overall system, the overall system is modeled around a 300kVA back to back SiC multilevel modular converter used as a direct-connected medium voltage (MV) grid intertie based on MATLAB/Simulink domain. Several important case studies are presented in this paper to prove the effectiveness of the proposed architecture. case study results are presented.
Abstract: In this study, an approach of estimating the equivalent circuit model (ECM) parameters for Li-ion batteries (LIBs) is proposed based on the voltage value at different intervals while relaxing the LIB after discharge. The typical approach for estimating ECM parameters of a LIB is to conduct electrochemical impedance spectroscopy (EIS) measurements at different frequencies and fit them to a predefined circuit model, which requires additional measuring arrangements and specialized devices. The proposed methodology utilizes four different voltages at 0s, 60s, 360s, and 1800s alongside the specific state of charge (SoC) value for a specific constant discharge current value of ~1C until the relaxation stage to train and evaluate three regression-based machine learning models— Support Vector Regression (SVR), Extreme Gradient Boosting (XGBoost), and Gaussian Process Regression (GPR)—for estimating the ECM parameters of the selected model. Bayesian optimization is employed for hyperparameter tuning to achieve optimal performance for all the regressor models, among which, the GPR provided the best performance with the root-mean-squared error (RMSE) of less than 4x10-4 on average for the resistive components and less than 0.27 for capacitive components with excellent R2 scores. The simplicity of the approach enables it to eliminate the need for sophisticated measuring equipment and computation power.
Frequency Domain Reflectometry (FDR) has attracted significant attention for use in nuclear power plants (NPPs) for non-destructive cable health monitoring. However, cable aging detection using FDR faces challenges due to its high sensitivity to environmental factors such as temperature, vibrations, proximity to other cables, and so on. This work aims to evaluate the influence of measurement temperature on the FDR reflected signal in a low voltage cable undergoing accelerated thermal aging. A 100 ft long multi-core low-voltage unshielded power cable insulated with flame retardant ethylene propylene rubber (FR-EPR) and covered by a chloro-polyethylene (CPE) jacket was selected for this study. The cable was energized during aging by a 480 VAC 3-phase motor, and a 30 ft mid-section of this cable was routed through an air circulating oven held at 140 °C for up to an effective aging time of 62 days. FDR measurements were taken periodically with the oven on (at 140 °C) and with the oven off (at 22 °C). A comparative analysis of data collected at both temperatures showed that the FDR response was strongly dependent on measurement temperature. FDR measurements at ambient temperature showed large peaks corresponding to impedance changes in the aged section of the cable after 3 days of aging. These peaks continued to rise steadily with increasing aging time. However, for measurements taken at 140 °C, slowly rising peaks in the oven region (aged section) were observed only after a lead time of 23 days of aging. This work highlights the importance of measurement temperature on the performance of FDR as a condition monitoring tool for aging cables.
This paper presents a frequency-domain analysis of the turn-off equivalent switching network of a hard-switched semiconductor switching cell. This paper also proposes a novel method to suppress parasitic voltage ringing by placing the turn-off current zero at the parasitic resonant frequency. The turn-off current was decomposed into ramp functions and a constant-valued function to facilitate obtaining the frequency components of the turn-off current using the Laplace transform of standard signals. The proposed frequency-domain modeling of the parasitic voltage ringing and the suppression were validated by detailed circuit simulation using parameters corresponding to prior literature with experimental validation.
The rapid adoption of photovoltaic (PV) systems combined with falling prices of energy storage is paving the way for a future in which customers could locally supply their energy needs and export surplus power to the grid. However, reverse power flow from multiple sites in a network can cause overvoltage that decreases system reliability and the utilization level of PV system. In this paper, we present a two-stage approach to solve the energy coordination problem in distribution networks. In the first stage, a household with PV and energy storage is optimized to allow customers to adopt different control strategies such as load following and tariff arbitrage. We show that such customer-led control strategies can cause reverse power flows during peak PV generation periods, thus resulting in overvoltage. In such cases, the second stage of the proposed approach is called upon to solve a fairness-based energy coordination problem that can maintain voltages within limits while maximizing the PV generation while fairly distributing the actions among all the PV systems. As a result, each of the resources in the network has equal opportunity to export power and shares the responsibility of voltage regulation. Simulation studies have been carried out on the IEEE 13-bus test feeder to verify the effectiveness of the proposed approach.
This paper presents a comprehensive digital twin (DT) framework for hydroelectric systems that enables adaptive control of turbine governors and excitation systems without requiring detailed manufacturer specifications. The proposed framework integrates neural network-based system identification with stabilizing adaptive control laws for the installed turbine controller and middle-branch adaptive tuning for the installed voltage regulator. Using real operational data from Unit C-8 at Rocky Reach Dam (1,349 MW capacity), highfidelity neural network models are developed to capture turbine and generator dynamics without requiring detailed manufacturer specifications. The DT enables safe controller synthesis and validation in simulation before deployment. For turbine control, the proposed method achieves a 79.9% mean square error (MSE) reduction compared with that of an optimal controller. For voltage regulation, the adaptive excitation controller achieves approximately 42.6% MSE reduction while preserving installed protection logic. The results demonstrate that DT technology provides a practical pathway for modernizing hydropower control systems with minimal operational disruption.