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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Reactions and diffusion between an Al film and a Ti substrate

The reaction between a 0.5 to 1.0 micron Al film and a thick Ti substrate to form TiAl3 occurs very rapidly on heating to 635 C and causes the Al to be confined to the surface region. After heating to 900 C, Ti3Al is formed with little release of Al into alpha-Ti. Further annealing at 900 C eventually causes the Ti3Al phase to decompose and a substantial amount of Al is released into alpha-Ti. The interdiffusion coefficient for Al in alpha-Ti at 900 C was found to increase by less than one order of magnitude as Al is varied from 0 to 20 at. pct. These data were obtained from the (101) X-ray diffraction intensity band using polycrystalline samples. Improvements in the analysis of X-ray diffraction data for the determination of composition profiles are discussed.

Rao, V. B.↗
NASA NTRS1983

Influence of thermomechanical processing on elevated temperature slow plastic flow properties of B2 aluminide Fe-39.8at.% Al

A study of the elevated temperature slow plastic flow properties of the B2 aluminide Fe-39.8at.% Al was undertaken. Polycrystalline materials possessing several different microstructures were produced by the hot extrusion of prealloyed powder and, in some cases, postextrusion heat treatments. Compression tests were conducted in air at 1200, 1300 and 1400 K. Such testing revealed that the extrusion temperature affected the active deformation mechanisms where material extruded at 1505 K had a stress exponent about twice that of the intermetallic extruded at 1200 K. Grain size refinement to about 10 microns was found to strengthen the Fe-39.8at.% Al material; unfortunately, the effectiveness of such strengthening is limited to a homologous temperature of about 0.75 for strain rates of commercial interest (less than 10 to the -7th/sec).

Whittenberger, J. D.↗
NASA NTRS1983

A brittle to ductile transition in NiAl of a critical grain size

Tensile tests have been carried out on the strongly ordered B2 aluminide NiAl at 400 C to investigate the effect of the grain size on the ductility of the material. It is found that the ductility is very low and essentially independent of the grain size for aggregates of grains larger than about 20 microns; for finer-grained aggregates, the ductility increases sharply with decreasing grain size. Thus, NiAl exhibits a critical grain size below which polycrystalline aggregates are ductile in tension. For all grain sizes, fracture occurs in a brittle manner through a combination of intergranular decohesion and transgranular cleavage.

Schulson, E. M.↗
NASA NTRS1983

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗
NASA NTRS1985

Upgrading Metallurgical-Grade Silicon

Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

Woerner, L. M.↗
NASA NTRS1983

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.

Cheng, L. J.↗
NASA NTRS1984

Orientation and Morphology Effects in Rapid Silicon Sheet Solidification

Radial growth anisotropies and equilibrium forms of point nucleated, dislocation free silicon sheets spreading horizontally on the free surface of a silicon melt were measured for (100), (110), (111), and (112) sheet planes. The growth process was recorded. Qualitative Wulff surface free energy polar plots were deduced from the equilibrium shapes for each sheet plane. Predicted geometries for the tip shape of unidirectional, dislocation free, horizontally grown sheets growing in various directions within the planes were analyzed. Polycrystalline sheets and dendrite propagation were analyzed. For dendrites, growth rates on the order of 2.5 m/min and growth rate anisotropies of 25 are measured.

Ciszek, T. F.↗
NASA NTRS1983

Qualification and testing of modules

The experience gained in procuring solar modules soon to be installed on the Photovoltaic Higher Education National Exemplar Facility (PHENEF) at Georgetown University is discussed. The 300 KE Photovoltaic Array consists of 4464, 2' X 4', polycrystalline solar cell modules. The performance requirements for the modules are described in a detailed procurement specification which defines physical and electrical characteristics and extensive quality assurance provisions including requirements for an interface control drawing and qualification and acceptance testing.

Cohen, D. B.↗
NASA NTRS1984

Engineering and design properties of thallium-doped sodium iodide and selected properties of sodium-doped cesium iodide

Mechanical and thermal properties, not available in the literature but necessary to structural design, using thallium doped sodium iodide and sodium doped cesium iodide were determined to be coefficient of linear thermal expansion, thermal conductivity, thermal shock resistance, heat capacity, elastic constants, ultimate strengths, creep, hardness, susceptibility to subcritical crack growth, and ingot variation of strength. These properties were measured for single and polycrystalline materials at room temperature.

Forrest, K.↗
NASA NTRS1984

Materials for high-temperature thermoelectric conversion

The development of materials for high temperature thermoelectric energy conversion devices was investigated. The development of new criteria for the selection of materials which is based on understanding of the fundamental principles governing the behavior of high temperature thermoelectric materials is discussed. The synthesis and characterization of promising new materials and the growth of single crystals to eliminate possible problems associated with grain boundaries and other defects in polycrystalline materials are outlined.

Feigelson, R. S.↗
NASA NTRS1982

Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2

High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.

Plahutnik, F.↗
NASA NTRS1983

Silicon solar cell process development, fabrication and analysis

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

Leung, D. C.↗
NASA NTRS1984

The role of material properties in adhesion

When two solid surfaces are brought into contact strong adhesive bond forces can develop between the materials. The magnitude of the forces will depend upon the state of the surfaces, cleanliness and the fundamental properties of the two solids, both surface and bulk. Adhesion between solids is addressed from a theoretical consideration of the electronic nature of the surfaces and experimentally relating bond forces to the nature of the interface resulting from solid state contact. Surface properties correlated with adhesion include, atomic or molecular orientation, reconstruction and segregation as well as the chemistry of the surface specie. Where dissimilar solids are in contact the contribution of each is considered as is the role of their interactive chemistry on bond strength. Bulk properties examined include elastic and plastic behavior in the surficial regions, cohesive binding energies, crystal structure, crystallographic orientation and state. Materials examined with respect to interfacial adhesive interactions include metals, alloys, ceramics, polymers and diamond. They are reviewed both in single and polycrystalline form. The surfaces of the contacting solids are studied both in the atomic or molecularly clean state and in the presence of selected surface contaminants.

Buckley, D. H.↗
NASA NTRS1983

Surface chemistry, friction, and wear of Ni-Zn and Mn-Zn ferrites in contact with metals

X-ray photoelectron and Auger electron spectroscopy analysis were used in sliding friction experiments. These experiments were conducted with hot-pressed polycrystalline Ni-Zn and Mn-Zn ferrites, and single-crystal Mn-Zn ferrite in contact with various transition metals at room temperature in both vacuum and argon. The results indicate that Ni2O3 and Fe3O4 were present on the Ni-Zn ferrite surface in addition to the nominal bulk constituents, while MnO2 and Fe3O4 were present on the Mn-Zn ferrite surface in addition to the nominal bulk constituents. The coefficients of friction for the ferrites in contact with metals were related to the relative chemical activity of these metals. The more active the metal, the higher is the coefficient of friction. The coefficients of friction for the ferrites were correlated with the free energy of formation of the lowest metal oxide. The interfacial bond can be regarded as a chemical bond between the metal atoms and the oxygen anions in the ferrite surfaces. The adsorption of oxygen on clean metal and ferrite does strengthen the metal-ferrite contact and increase the friction. The ferrites exhibit local cracking and fracture with sliding under adhesive conditions. All the metals transferred to the surfaces of the ferrites in sliding. Previously announced in STAR as N83-19901

Miyoshi, K.↗
NASA NTRS1982

Directional solidification of silicon in carbon crucibles by an oscillating crucible technique

The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.

Daud, T.↗
NASA NTRS1982

Enhanced diffusion of phosphorus at grain boundaries

Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.

Cheng, L. J.↗
NASA NTRS1984

Bubble formation in oxide scales on SiC

The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

Mieskowski, D. M.↗