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At least 541 records · Page 30

Introductory lecture: atmospheric chemistry in the Anthropocene

The term “Anthropocene” was coined by Professor Paul Crutzen in 2000 to describe an unprecedented era in which anthropogenic activities are impacting planet Earth on a global scale. Greatly increased emissions into the atmosphere, reflecting the advent of the Industrial Revolution, have caused significant changes in both the lower and upper atmosphere. Atmospheric reactions of the anthropogenic emissions and of those with biogenic compounds have significant impacts on human health, visibility, climate and weather. Two activities that have had particularly large impacts on the troposphere are fossil fuel combustion and agriculture, both associated with a burgeoning population. Emissions are also changing due to alterations in land use. This paper describes some of the tropospheric chemistry associated with the Anthropocene, with emphasis on areas having large uncertainties. These include heterogeneous chemistry such as those of oxides of nitrogen and the neonicotinoid pesticides, reactions at liquid interfaces, organic oxidations and particle formation, the role of sulfur compounds in the Anthropocene and biogenic–anthropogenic interactions. A clear and quantitative understanding of the connections between emissions, reactions, deposition and atmospheric composition is central to developing appropriate cost-effective strategies for minimizing the impacts of anthropogenic activities. Finally, the evolving nature of emissions in the Anthropocene places atmospheric chemistry at the fulcrum of determining human health and welfare in the future.

54 ENVIRONMENTAL SCIENCES↗

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗

Effect of the oxide layer on current-induced spin-orbit torques in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

We study the effect of the oxide layer on the current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Hf|CoFeB|MgO (MgO-capped) or Hf|CoFeB|TaO{sub x} (TaO{sub x}-capped) structures. The effective fields corresponding to both the field-like and damping-like current-induced SOTs are characterized using electric transport measurements. Both torques are found to be significantly stronger in MgO-capped structures than those in TaO{sub x}-capped structures. The difference in field-like and damping-like SOTs in the different structures may be attributed to the different Rashba-like Hamiltonian, arising from the difference in the electric potential profiles across the oxide|ferromagnet interfaces in the two cases, as well as possible structural and oxidation differences in the underlying CoFeB and Hf layers. Our results show that the oxide layer in heavy-metal|ferromagnet|oxide trilayer structures has a very significant effect on the generated SOTs for manipulation of ferromagnetic layers. These findings could potentially be used to engineer SOT devices with enhanced current-induced switching efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Deciphering atomistic mechanisms of the gas-solid interfacial reaction during alloy oxidation

Gas-solid interfacial reaction is critical to many technological applications from heterogeneous catalysis to stress corrosion cracking. A prominent question that remains unclear is how gas and solid interact beyond chemisorption to form a stable interphase for bridging subsequent gas-solid reactions. Here, we report real-time atomic-scale observations of Ni-Al alloy oxidation reaction from initial surface adsorption to interfacial reaction into the bulk. We found distinct atomistic mechanisms for oxide growth in O 2 and H 2 O vapor, featuring a “step-edge” mechanism with severe interfacial strain in O 2 , and a “subsurface” one in H 2 O. Ab initio density functional theory simulations rationalize the H 2 O dissociation to favor the formation of a disordered oxide, which promotes ion diffusion to the oxide-metal interface and leads to an eased interfacial strain, therefore enhancing inward oxidation. Our findings depict a complete pathway for the Ni-Al surface oxidation reaction and delineate the delicate coupling of chemomechanical effect on gas-solid interactions.

36 MATERIALS SCIENCE↗

Chemical Analysis of Tantalum Thin Films compared to Niobium Thin Films using SIMS and XPS

Superconducting qubits are a leading platform for quantum computation. These circuits are typically made from superconducting materials like aluminum or niobium. However, the amorphous niobium oxide and aluminum oxide on the surface of these circuits introduce considerable RF loss due to the presence of two-level systems (TLS), which limits the maximum coherence times T1 to ~100 μs. Capping the niobium qubits with a tantalum layer leads to a 3- 5x improvement [Bal et al., 2024]. But even in this case, tantalum forms an amorphous surface oxide that introduces loss. In an effort to devise strategies to eliminate the presence of this oxide, we present a comprehensive study on the nature of Ta oxide using x-ray photoemission spectroscopy (XPS) and secondary ion mass spectrometry (ToF-SIMS) as a function of heat treatment. The thin films were annealed in ultra-high vacuum conditions and analyzed in situ to characterize the composition and evolution of the native tantalum oxide layer and oxide-metal interface. Our analysis reveals two critical differences between tantalum and niobium oxides: Nb2O5 completely dissolves at 400°C, while Ta2O5 persists even at 800°C. Additionally, tantalum oxide contains only a single suboxide (TaO), in contrast to niobium's two suboxides (NbO and NbO2). The suboxide of tantalum contributes minimally to the total oxide content and shows a relative increase with temperature. Understanding the oxide’s behavior will open new pathways for optimizing coherence times in tantalum qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Diffusional transport during the cyclic oxidation of gamma + beta, Ni-Cr-Al(Y, Zr) alloys

The cyclic oxidation behavior of several cast gamma + beta, Ni-Cr-Al(Y, Zr) alloys and one low-pressure plasma spraying gamma + beta, Ni-Co-Cr-Al(Y) alloy was studied. Cyclic oxidation was found to result in a decreasing Al concentration at the oxide-metal interface due to a high rate of Al consumption coupled with oxide scale cracking and spalling. Diffusion paths plotted on the ternary phase diagram showed higher Ni concentrations with increasing cyclic oxidation exposures. The alloy with the highest rate of Al consumption and the highest Al content underwent breakaway oxidation following 500 1-hr cycles at 1200 C.

Nesbitt, J. A.↗

Oxidation behavior of Zry-4 in steam-air mixtures at high temperature

This study dealt with the oxidation behavior of Zry-4 nuclear fuel cladding under a severe nuclear reactor accident scenario occurring in a light-water reactor. Influence of the reaction extent on cladding mechanical properties was also treated. Zry-4 fuel cladding segments were exposed to steam atmosphere containing different amount of air in composition ranging from 0 to 100 vol. %. Exposure times covered both pre- and post-breakaway regimes. Metallographic observations along with microhardness testing were carried out to study the effect of air fraction on the material microstructure. Hydrogen pick-up was measured and residual mechanical properties were assessed employing Ring Compression Tests. The results show that the addition of air in steam can lead to more than 300 % increase of weight gain in case of ∼50 % or higher air fraction after the exposure of 60 min., namely, 'late post-breakaway regime'. Approximately three times thicker oxide scales were observed in such cases, indicating that most of the weight gain was due to the oxide layer increase. Nitride phase was preferentially observed close to the interface between oxide and metal layers. The α-Zr(O) sublayer thickness decreases with the increasing fraction of air in steam. Microhardness, measured within the prior β-phase region, slightly depends on the air fraction. Hydrogen uptake, on the other hand, depends strongly on the air fraction in steam. In the case of shorter exposure times, the effect of air addition in steam was suppressed. Eventually, specimen plastic strains drastically reduced in the late post-breakaway regime. (authors)

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y{sub 2}O{sub 3} was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al{sub 2}O{sub 3} nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

36 MATERIALS SCIENCE↗

Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS 2 /MoO 3 ) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO 3 and the relative band alignment with MoS 2 , together with small energy gap, the MoS 2 /MoO 3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO 3 , the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS 2 , showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS 2 and MoO x (x < 3) interface, which consistently explains the available experimental observations.

36 MATERIALS SCIENCE↗

Protective role of silicon in the high-temperature oxidation of titanium

We investigated the oxidation of pure titanium and Ti-0.8 at.% Si at 800 ° C in Ar-O 2 and O 2 to clarify how dilute silicon additions enhance the oxidation resistance of titanium. The effect of silicon stemmed from differences in oxide growth rather than oxygen dissolution in the metal. Initially, silicon reduced outward oxide growth and completely eliminated inward growth, which we attributed to the continuous Ti 5 Si 3 layer formed at the oxide-metal interface. Furthermore, after breakdown of the Ti 5 Si 3 layer, the oxide — containing silicon — became lamellar but remained more compact and possibly slower growing than the oxide on pure titanium.

36 MATERIALS SCIENCE↗

Structure of the electrical double layer at the ice–water interface

The surface of ice in contact with water contains sites that undergo deprotonation and protonation and can act as adsorption sites for aqueous ions. Therefore, an electrical double layer should form at this interface and existing models for describing the electrical double layer at metal oxide–water interfaces should be able to be modified to describe the surface charge, surface potential, and ionic occupancy at the ice–water interface. I used a surface complexation model along with literature measurements of the zeta potential of ice in brines of various strength and pH to constrain equilibrium constants. I then made predictions of ion site occupancy, surface charge density, and partitioning of counterions between the Stern and diffuse layers. The equilibrium constant for cation adsorption is more than 5 orders of magnitude larger than the other constants, indicating that this reaction dominates even at low salinity. Deprotonated OH sites are predicted to be slightly more abundant than dangling O sites, consistent with previous work. Surface charge densities are on the order of ±0.001 C/m2 and are always negative at the moderate pH values of interest to atmospheric and geophysical applications (6–9). In this pH range, over 99% of the counterions are contained in the Stern layer. This suggests that diffuse layer polarization will not occur because the ionic concentrations in the diffuse layer are nearly identical to those in the bulk electrolyte and that electrical conduction and polarization in the Stern layer will be negligible due to reduced ion mobility.

Daigle, Hugh (ORCID:0000000260628321)↗

Developments toward an 18% efficient silicon solar cell

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Meulenberg, A., Jr.↗

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo intermetallic alloy

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using x ray diffraction techniques, electron microprobe analysis, and energy dispersive x ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, Terryl A.↗

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using X-ray diffraction techniques, electron microprobe analysis, and energy dispersive X-ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, T. A.↗

KNN–NTK composite lead-free piezoelectric ceramic

A (K,Na)NbO₃-based lead-free piezoelectric ceramic was successfully densified. It exhibited an enhanced electromechanical coupling factor of kₚ=0.52, a piezoelectric constant d₃₃=252 pC/N, and a frequency constant Nₚ=3170 Hz m because of the incorporation of an elaborate secondary phase composed primarily of KTiNbO₅. The ceramic's nominal composition was 0.92K₀.₄₂Na₀.₄₄Ca₀.₀₄Li₀.₀₂Nb₀.₈₅O₃–0.047K₀.₈₅Ti₀.₈₅Nb₁.₁₅O₅–0.023BaZrO₃ –0.0017Co₃O₄–0.002Fe₂O₃–0.005ZnO, abbreviated herein as KNN–NTK composite. The KNN–NTK ceramic exhibited a dense microstructure with few microvoids which significantly degraded its piezoelectric properties. Elemental maps recorded using transmission electron microscopy with energy-dispersive X-ray spectroscopy (TEM–EDS) revealed regions of high concentrations of Co and Zn inside the NTK phase. In addition, X-ray diffraction patterns confirmed that a small portion of the NTK phase was converted into K₂(Ti,Nb,Co,Zn)₆O₁₃ or CoZnTiO₄ by a possible reaction between Co and Zn solutes and the NTK phase during a programmed sintering schedule. TEM studies also clarified a distortion around the KNN/NTK interfaces. Such an NTK phase filled voids between KNN particles, resulting in an improved chemical stability of the KNN ceramic. The manufacturing process was subsequently scaled to 100 kg per batch for granulated ceramic powder using a spray-drying technique. The properties of the KNN–NTK composite ceramic produced using the scaled-up method were confirmed to be identical to those of the ceramic prepared by conventional solid-state reaction sintering. Consequently, slight changes in the NTK phase composition and the distortion around the KNN/NTK interfaces affected the KNN–NTK composite ceramic's piezoelectric characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epitaxial Cr on n-SrTiO{sub 3}(001) - An ideal Ohmic contact

Epitaxial Cr metallizations grown on n-SrTiO{sub 3}(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO{sub 2} layer, no reduction of the SrTiO{sub 3}, and a near-perfect Ohmic contact. Cr/n-SrTiO{sub 3}(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

36 MATERIALS SCIENCE↗

Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO{sub 2}/Si substrates

The erbium silicate formation processes during annealing in Ar gas were monitored by synchrotron radiation grazing incidence X-ray diffraction (GIXD) in real time and the optical properties of the silicates were investigated by photoluminescence measurements in spectral and time-resolved domains. The GIXD measurements show that erbium silicates and erbium oxide are formed by interface reactions between silicon oxide and erbium oxides deposited on silicon oxide by reactive sputtering in Ar gas and O{sub 2}/Ar mixture gas ambiences. The erbium silicates are formed above 1060 degree sign C in Ar gas ambience and above 1010 degree sign C in O{sub 2}/Ar gas ambience, and erbium silicides are dominantly formed above 1250 degree sign C. The I{sub 15/2}-I{sub 13/2} Er{sup 3+} photoluminescence from the erbium oxide and erbium silicate exhibits abnormal temperature dependence, which can be explained by the phonon-assisted resonant absorption of the 532-nm excitation photons into the {sup 2}H{sub 11/2} levels of Er{sup 3+} ions of the erbium compounds.

36 MATERIALS SCIENCE↗