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At least 541 records · Page 30

Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

36 MATERIALS SCIENCE↗

Magnetic properties of BaTiO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films integrated on Si(100)

Two-phase multiferroic heterostructures composed of room-temperature ferroelectric BaTiO{sub 3} (BTO) and ferromagnetic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) epitaxial thin films were grown on technologically important substrate Si (100). Bilayers of BTO/LSMO thin films display ferromagnetic Curie transition temperatures of ∼350 K, close to the bulk value, which are independent of BTO films thickness in the range of 25–100 nm. Discontinuous magnetization jumps associated with BTO structural transitions were suppressed in M(T) curves, probably due to substrate clamping effect. Interestingly, at cryogenic temperatures, the BTO/LSMO structure with BTO layer thickness of 100 nm shows almost 2-fold higher magnetic coercive field, 3-fold reduction in saturation magnetization, and improved squareness compared to the sample without BTO. We believe that the strong in-plane spin pinning of the ferromagnetic layer induced by BTO layer at BTO/LSMO interface could cause such changes in magnetic properties. This work forms a significant step forward in the integration of two-phase multiferroic heterostructures for CMOS applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electric-field control of electromagnon propagation and spin-wave injection in a spiral multiferroic/ferromagnet composite

We consider theoretically a composite chain consisting of a multiferroic helimagnet coupled to a conventional ferromagnet and inspect the conversion of electromagnon excitation into spin waves and vice versa. We demonstrate an electric-field control of spin-wave injection realized by electrically exciting an electromagnon that propagates with an intrinsic frequency larger than the gap of the spin wave in the ferromagnet. The efficiency of the conversion of the electromagnon into spin waves depends strongly on the strength of the magnetoelectric coupling at the interface and the intrinsic frequency of the multiferroic helimagnets. The phenomena predicted here suggest that a multiferroic/ferromagnet composite offers new opportunities for spin-wave injection, conversion, and control using electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of Ga-concentration on the electrical and magnetic properties of magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite

Multiferroic materials exhibit magnetoelectric (ME) coupling and promise new device applications including magnetic sensors, generators, and filters. An effective method for developing ME materials with enhanced ME effect is achieved by the coupling through the interfacial strain between piezoelectric and magnetostrictive materials. In this study, the electrical and magnetic properties of Ga doped magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite are studied systematically. It is found that Ga doping improves the sensitivity of magnetoelastic response and stabilizes the magnetic phase of the composites. More importantly, Ga doping reduces the electrical conductivity of composite, as well as the dielectric loss. An enhancement of the electrostrain with doping Ga is also observed. Quantitative estimation indicates that magnetoelectric coupling is enhanced for Ga-doped CoGa x Fe 2–x O 4 /BaTiO 3 composites. As a result, the present work is beneficial to the practical application of composite CoFe 2 O 4 /BaTiO 3 -based multiferroic materials.

36 MATERIALS SCIENCE↗

Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe){sub 2}O{sub 3}/SrRuO{sub 3} heterostructures

Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga{sub 0.6}Fe{sub 1.4}O{sub 3} (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO{sub 3}(111)/SrTiO{sub 3}(111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 μC/cm{sup 2}. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO{sub 3} will pave a way to take advantage of the room-temperature non-zero multi-orders for future non-volatile memory device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Soft mode characteristics of up-up-down-down spin chains: The role of exchange interactions on lattice dynamics

In this work, the dynamics of a diatomic chain is investigated with ↑↑↓↓ spin order in which the dispersion relation characterizes the effect of magnetic interactions on the lattice dynamics. The optical or acoustic mode softening in the center or boundary of the Brillouin zone can be observed, indicating the transitions of ferroelectric state, antiferromagnetic state, or ferroelastic state. The coexistence of the multiferroic orders related to the ↑↑↓↓ spin order represents a type of intrinsic multiferroic with strong ferroelectric order and different microscopic mechanisms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin reversal and ferroelectricity in perovskite Dy{sub 0.7}Sr{sub 0.3}MnO{sub 3} and Dy{sub 0.6}Sr{sub 0.4}MnO{sub 3}

Multiferroic materials which simultaneously exhibit electric polarization and magnetism have attracted more and more attention due to their novel physical properties and promising applications. Here, we report the magnetic and ferroelectric properties of single phase perovskite manganites Dy{sub 0.7}Sr{sub 0.3}MnO{sub 3} and Dy{sub 0.6}Sr{sub 0.4}MnO{sub 3} by varying temperature and magnetic field. Our results reveal that there exist spin reversal and strong antiferromagnetic pinning effects in both compounds, as well as negative magnetization in Dy{sub 0.6}Sr{sub 0.4}MnO{sub 3}. Moreover, upon Sr-doping, spontaneous electric polarizations have been observed and the maximum polarization value of Dy{sub 0.7}Sr{sub 0.3}MnO{sub 3} is about 1000 μC/m{sup 2} while Dy{sub 0.6}Sr{sub 0.4}MnO{sub 3} reaches to 2000 μC/m{sup 2}. The onset of the ferroelectric transition temperature is enhanced to be around 60 K. Our results indicate that the antiferromagnetic coupling is relevant to the ferroelectric properties of these fascinating multiferroic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

Cui, Jizhai↗

Manipulation of Dy-Mn coupling and ferrielectric phase diagram of DyMn{sub 2}O{sub 5}: The effect of Y substitution of Dy

DyMn{sub 2}O{sub 5} is an extraordinary example in the family of multiferroic manganites and it accommodates both the 4f and 3d magnetic ions with strong Dy-Mn (4f-3d) coupling. The electric polarization origin is believed to arise not only from the Mn spin interactions but also from the Dy-Mn coupling. Starting from proposed scenario on ferrielectricity in DyMn{sub 2}O{sub 5} where the exchange-strictions associated with the Mn{sup 3+}-Mn{sup 4+}-Mn{sup 3+} blocks and Dy{sup 3+}-Mn{sup 4+}-Dy{sup 3+} blocks generate the two ferroelectric sublattices, we perform a set of characterizations on the structure, magnetism, and electric polarization of Dy{sub 1-x}Y{sub x}Mn{sub 2}O{sub 5} in order to investigate the roles of Dy-Mn coupling in manipulating the ferrielectricity. It is revealed that the non-magnetic Y substitution of Dy suppresses gradually the Dy{sup 3+} spin ordering and the Dy-Mn coupling. Consequently, the ferroelectric sublattice generated by the exchange striction associated with the Dy{sup 3+}-Mn{sup 4+}-Dy{sup 3+} blocks is destabilized, but the ferroelectric sublattice generated by the exchange striction associated with the Mn{sup 3+}-Mn{sup 4+}-Mn{sup 3+} blocks remains less perturbed, enabling the ferrielectricity-ferroelectricity transitions with the Y substitution. A phenomenological ferrielectric domain model is suggested to explain the polarization reversal induced by the Y substitution. The present work presents a possible scenario of the multiferroic mechanism in not only DyMn{sub 2}O{sub 5} but probably also other RMn{sub 2}O{sub 5} members with strong 4f-3d coupling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tetragonal BiFeO{sub 3} on yttria-stabilized zirconia

High structural susceptibility of multiferroic BiFeO{sub 3} (BFO) makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ) substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO{sub 3} substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications.

36 MATERIALS SCIENCE↗

Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Size dependent magnetic and electrical properties of Ba-doped nanocrystalline BiFeO{sub 3}

Improvement in magnetic and electrical properties of multiferroic BiFeO{sub 3} in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation, we report a study on particle size dependent structural, magnetic and electrical properties of sol-gel derived Bi{sub 0.9}Ba{sub 0.1}FeO{sub 3} nanoparticles of different sizes ranging from ∼ 12 to 49 nm. The substitution of Bi by Ba significantly suppresses oxygen vacancies, reduces leakage current density and Fe{sup 2+} state. An improvement in both magnetic and electrical properties is observed for 10 % Ba-doped BiFeO{sub 3} nanoparticles compared to its undoped counterpart. The saturation magnetization of Bi{sub 0.9}Ba{sub 0.1}FeO{sub 3} nanoparticles increase with reducing particle size in contrast with a decreasing trend of ferroelectric polarization. Moreover, a first order metamagnetic transition is noticed for ∼ 49 nm Bi{sub 0.9}Ba{sub 0.1}FeO{sub 3} nanoparticles which disappeared with decreasing particle size. The observed strong size dependent multiferroic properties are attributed to the complex interaction between vacancy induced crystallographic defects, multiple valence states of Fe, uncompensated surface spins, crystallographic distortion and suppression of spiral spin cycloid of BiFeO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural, electronic properties and enhancement of electrical polarization in Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} superlattice by first-principles calculations

Employing first-principles calculations, structural, electronic properties of new multiferroic material Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr{sub 2}NiMnO{sub 7} structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multifunctional epitaxial systems on silicon substrates

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a variety of ferroelectric, multiferroic, magnetic, photocatalytic, and smart materials. Their properties have been extensively investigated and their functionality found to be comparable to films grown on single-crystal oxide substrates previously reported by researchers in this field. In addition, this review explores the utility of using laser processing to introduce stable defects in a controlled way and induce magnetism and engineer the optical and electrical properties of nonmagnetic oxides such as BaTiO{sub 3}, VO{sub 2}, NiO, and TiO{sub 2} as an alternative for incorporating additional magnetic and conducting layers into the structure. These significant materials advancements herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.

36 MATERIALS SCIENCE↗

Temperature-induced hexagonal–orthorhombic phase transition in lutetium ferrite nanoparticles

The x-ray diffraction, Raman, and infrared spectroscopies and magnetic measurements were used to explore the correlated changes of the structure, lattice dynamics, and magnetic properties of the LuFeO3 nanoparticles, which appear in dependence on their sintering temperature. We revealed a gradual substitution of the hexagonal phase by the orthorhombic phase in the nanoparticles, with sintering temperature increasing from 700 to 1100 °C. The origin and stability of the hexagonal phase in the LuFeO3 nanoparticles are of the special interest, because the nanoparticles in the phase can be a room-temperature multiferroic with a weak ferromagnetic and pronounced structural and ferroelectric long-range ordering. The antiferromagnetic and nonpolar orthorhombic phase is more stable in the bulk LuFeO3. To define the ranges of the hexagonal phase stability, we determine the bulk and interface energy densities of different phases from the comparison of the Gibbs model with experimental results. Using effective parameters of the Gibbs model, we predict the influence of size effects and temperature on the structural and polar properties of the LuFeO3 nanoparticles. Analysis of the obtained results shows that the combination of the x-ray diffraction, Raman and infrared spectroscopies, magnetic measurements, and theoretical modeling of structural and polar properties allows us to establish the interplay between the phase composition, lattice dynamics, and multiferroic properties of the LuFeO3 nanoparticles prepared under different conditions.

Materials Science↗

Thickness scaling of ferroelectricity in BiFeO 3 by tomographic atomic force microscopy

Nanometer-scale 3D imaging of materials properties is critical for understanding equilibrium states in electronic materials, as well as for optimization of device performance and reliability, even though such capabilities remain a substantial experimental challenge. Tomographic atomic force microscopy (TAFM) is presented as a subtractive scanning probe technique for high-resolution, 3D ferroelectric property measurements. Volumetric property resolution below 315 nm 3 , as well as unit-cell-scale vertical material removal, are demonstrated. Specifically, TAFM is applied to investigate the size dependence of ferroelectricity in the room-temperature multiferroic BiFeO 3 across two decades of thickness to below 1 nm. TAFM enables volumetric imaging of ferroelectric domains in BiFeO 3 with a significant improvement in spatial resolution compared with existing domain tomography techniques. We additionally employ TAFM for direct, thickness-dependent measurements of the local spontaneous polarization and ferroelectric coercive field in BiFeO 3 . The thickness-resolved ferroelectric properties strongly correlate with cross-sectional transmission electron microscopy (TEM), Landau–Ginzburg–Devonshire phenomenological theory, and the semiempirical Kay–Dunn scaling law for ferroelectric coercive fields. These results provide an unambiguous determination of a stable and switchable polar state in BiFeO 3 to thicknesses below 5 nm. The accuracy and utility of these findings on finite size effects in ferroelectric and multiferroic materials more broadly exemplifies the potential for novel insight into nanoscale 3D property measurements via other variations of TAFM.

36 MATERIALS SCIENCE↗

Using ultrashort terahertz pulses to directly probe spin dynamics in insulating antiferromagnets

Terahertz pulses are a direct and general probe of ultrafast spin dynamics in insulating antiferromagnets (AFM). This is shown by using optical-pump, THz-probe spectroscopy to directly track AFM spin dynamics in the hexagonal multiferroic HoMnO 3 and the orthorhombic multiferroic TbMnO 3 . Here, our studies show that despite the different structural and spin orders in these materials, THz pulses can unambiguously resolve spin dynamics after optical photoexcitation. Lastly, we believe that this approach is quite general and can be applied to a broad range of materials with different AFM spin alignments, providing a novel non-contact approach for probing AFM order with femtosecond temporal resolution.

36 MATERIALS SCIENCE↗