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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Viscel: A general purpose computer program for analysis of linear viscoelastic structures, volume 2

The VISCEL program is a general purpose computer program developed for equilibrium analysis of linear viscoelastic structures. The program is written in FORTRAN 5 language to operate on the Univac 1108 computer under the EXEC 8 operating system. The program, an extension of the linear equilibrium problem solver ELAS, is an updated and extended version of its earlier form written for the IBM 7094 computer. Finite element matrix displacement approach coupled with the synchronized material property concept, utilizing incremental time steps, was adopted for the solution presented. The step-by-step procedure involves solution of recursive equations in the time domain, which takes into account the memory of material properties. Incremental and accumulative displacements and stresses are obtained at the end of each time step. In order to minimize the extent of computations resulting from accumulative effects of material memory, the program provides an option which enables the employment of constant time steps in the logarithmic scale. Program documentation is presented.

Gupta, K. K.↗
DOE OSTI2019

Effects of composition and crystallographic ordering on the ferromagnetic transition in Ni–Co–Mn–In magnetic shape memory alloys

In the present study, the effects of composition and the level of crystallographic ordering were studied in Ni 45 Co 5 Mn 50-X In X magnetic shape memory alloys with X = 13.55, 13.71 and 13.92, in order to reveal the relationship between the Curie temperature (T C ) of the austenite phase and the degree of L2 1 ordering. Various samples were prepared using secondary heat treatments at different temperatures below the order-disorder transition temperature and for different durations, after solution heat treatment, in order to control the degree of ordering. T C s were determined using calorimetric and magnetometry measurements. The relationship between the T C and the degree of order was used to predict the evolution of the order during selected heat treatments. It was shown that the T C of austenite exhibits a monotonous non-linear dependence on the fraction of the L2 1 phase. This relationship was corroborated via ab initio numerical calculations within a mean field approximation. Dependence of the crystallographic order parameter on temperature and duration of secondary heat treatments showed that ordering kinetics is fast, the total degree of order depends only on the annealing temperature and cooling rate for long enough treatments, and maximum achievable degree of order is limited by the low thermal energy available for atomic diffusion at low temperatures. Lastly, small changes in composition were observed to have a significant impact on martensitic transformation temperatures, and a significant but smaller effect on the ferromagnetic transition in these systems.

36 MATERIALS SCIENCE↗
NASA NTRS2017

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

3D NAND Flash memory; radiation susceptibility; si↗
DOE OSTI2022

Improving net ecosystem CO2 flux prediction using memory-based interpretable machine learning

Terrestrial ecosystems play a central role in the global carbon cycle and affect climate change. However, our predictive understanding of these systems is still limited due to their complexity and uncertainty about how key drivers and their legacy effects influence carbon fluxes. Here, we propose an interpretable Long Short-Term Memory (iLSTM) network for predicting net ecosystem CO 2 exchange (NEE) and interpreting the influence on the NEE prediction from environmental drivers and their memory effects. We consider five drivers and apply the method to three forest sites in the United States. Besides performing the prediction in each site, we also conduct transfer learning by using the iLSTM model trained in one site to predict at other sites. Results show that the iLSTM model produces good NEE predictions for all three sites and, more importantly, it provides reasonable interpretations on the input driver's importance as well as their temporal importance on the NEE prediction. Additionally, the iLSTM model demonstrates good across-site transferability in terms of both prediction accuracy and interpretability. The transferability can improve the NEE prediction in unobserved forest sites, and the interpretability advances our predictive understanding and guides process-based model development.

Liu, Siyan↗
DOE OSTI2022

On the Feasibility of 1T Ferroelectric FET Memory Array

To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded nonvolatile memory for various computing and storage applications, it is desirable to use a single FeFET (1T) as a unit cell and arrange the cells into an array. However, many write mechanisms for an 1T FeFET array reported in the literature are yet to be validated experimentally. In this work, we performed a comprehensive experimental characterization on the write operations in an 1T- NOR and 1T- AND array using n-channel bulk FeFETs. We discovered that: 1) the source/drain contact can only supply minority carriers (i.e., electrons) to the channel for polarization screening during the low- V TH state programming; 2) the body contact can not only supply majority carriers (i.e., holes) for efficient high- V TH state write, but also depletion charge for low- V TH state programming, though with lower efficiency; and 3) during the low/high- V TH programming, only the path that can supply negative/positive screening charges, respectively, need to respond, which necessitates the application of proper write biases on the corresponding terminal. Based on the understanding of these write mechanisms, we show the importance of localized body contact or column-wise body contact for the successful high- V TH state programming. We also show that the previously proposed C- AND write scheme fails to program the FeFET to the low- V TH state for our devices. Finally, we propose several write schemes for both 1T- AND and 1T- NOR arrays for various scenarios providing insights for choosing the appropriate write scheme, which will facilitate the adoption of 1T FeFET memory arrays for emerging applications.

FeFET↗
NASA NTRS1999

SRAM Based Re-programmable FPGA for Space Applications

An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 micrometers CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor de-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I(sub CC)) measured indicates a device tolerance of approximately 50krad(Si).

Wang, J. J.↗
DOE OSTI2015

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

We investigate the effect of Cu concentration On-state resistance retention characteristics of W/Cu/Ti/HfO{sub 2}/Pt memory cell. The development of RRAM device for application depends on the understanding of the failure mechanism and the key parameters for device optimization. In this study, we develop analytical expression for cations (Cu{sup +}) diffusion model using Gaussian distribution for detailed analysis of data retention time at high temperature. It is found that the improvement of data retention time depends not only on the conductive filament (CF) size but also on Cu atoms concentration density in the CF. Based on the simulation result, better data retention time is observed for electron wave function associated with Cu{sup +} overlap and an extended state formation. This can be verified by analytical calculation of Cu atom defects inside the filament, based on Cu{sup +} diffusion model. The importance of Cu diffusion for the device reliability and the corresponding local temperature of the filament were analyzed by COMSOL Multiphysics simulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Topological insulator-based high efficiency switching of magnetic unit, method and applications

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices

The radiation response of TaO x -based RRAM devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization damage from a 60 Co gamma source did not cause any changes in device resistance for either device type, up to 45 Mrad(Si). Displacement damage from a heavy ion beam caused the Set B in the high resistance state to decrease in resistance at 1 x 10 21 oxygen displacements per cm 3 ; meanwhile, the Set A devices did not exhibit any decrease in resistance due to displacement damage. Both types of devices exhibited an increase in resistance around 3 x 10 22 oxygen displacements per cm 3 , possibly due to damage at the oxide/metal interfaces. These extremely high levels of damage represent near-total atomic disruption, and if this level of damage were ever reached, other circuit elements would likely fail before the RRAM devices in this study. Overall, both sets of devices were much more resistant to radiation effects than other devices reported in the literature. Displacement damage effects were only observed in the Set A devices once the displacement-induced oxygen vacancies surpassed the intrinsic vacancy concentration in the devices, suggesting that high oxygen vacancy concentration played a role in the devices’ high tolerance to displacement damage.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Efficient GPU Implementation of Automatic Differentiation for Computational Fluid Dynamics

Many scientific and engineering applications require repeated calculations of derivatives of output functions with respect to input parameters. Automatic Differentiation (AD) is a method that automates derivative calculations and can significantly speed up code development. In Computational Fluid Dynamics (CFD), derivatives of flux functions with respect to state variables (Jacobian) are needed for efficient solutions of the nonlinear governing equations. AD of flux functions on graphics processing units (GPUs) is challenging as flux computations involve many intermediate variables that create high register pressure and require significant memory traffic because of the need to store the derivatives. This paper presents a forward-mode AD method based on multivariate dual numbers that addresses these challenges and simultaneously reduces the floating-point operation count. The dimension of the multivariate dual numbers is optimized for performance. The flux computations are restructured to minimize the number of temporary variables and reduce register pressure. For effective utilization of memory bandwidth, shared memory is used to store the local flux Jacobian. This AD implementation is compared with several other Jacobian implementations on an NVIDIA V100 GPU (V100). For three-dimensional perfect-gas compressible-flow equations implemented in a practical CFD code, the AD implementation of a flux Jacobian based on multivariate dual numbers of dimension 5 outperforms all other GPU AD implementations on V100. Its performance is comparable with the optimized hand-differentiated version. Finally, the implementation achieves 75% of the peak floating-point throughput and 61 % of the peak global device memory bandwidth usage.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Microstructure, Phase Transformation, Mechanical Behavior, Bio-corrosion and Antibacterial Properties of Ti-Nb-xSn (x = 0, 0.25, 0.5 and 1.5) SMAs

Porous Ti-Nb-xSn shape memory alloys (SMAs) are fabricated by microwave sintering technology. The microstructures exhibit needle-like morphologies, β{sub (N)} (normal straight and crossed needles along with needle-like morphology that resembles spaghetti or irregular lines with α-phases in between) as well as plate-like morphologies [normal straight plate-like morphology, α′′ and dendritic plate-like morphology, β{sub (D)}]. Increases in Sn addition significantly induce an increase in the density of the α-phase. XRD patterns exhibited three phases, namely the β-main phase with smaller intensities of α′′ and α. Further, the addition of 0.25% Sn led to more effective improvement in the intensity of the α′′-phase compared with 0.5% and 1.5% Sn addition. Additions of Sn also enhanced the fracture strength and its corresponding strain along with the shape memory effect (SME), where the best enhancement was achieved at 0.25% Sn. The corrosion rate (Ri) was reduced by rising Sn content, while both corrosion resistance and antibacterial zones were increased. The lower elastic modulus, as well as the robust mechanical properties and bioactivity, made these SMAs rather suitable for biomedical application purposes, where the low elastic modulus had value in terms of avoiding the problem of “stress shielding.”.

36 MATERIALS SCIENCE↗