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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Modulation of recombination zone position for white perovskite/organic emitter hybrid light-emitting devices

We report metal halide perovskites present specific challenges as emitters in large area, surface emission lighting devices. Among these challenges is the vast difference in carrier mobilities between the perovskite and many organic buffer layers typically used in such device fabrication as transport and blocking layers. This can make it difficult to engineer recombination to achieve white emitting devices generally. However, in this work, we introduce unique modulation of excitonic confinement within the perovskite layer of the device stack to control overall placement of the recombination zone. This results in a white light emitter that is bright and highly tunable, providing a path to realize white perovskite related light-emitting devices.

42 ENGINEERING↗
DOE OSTI2022

Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths

Here, we present a telecommunication-compatible bias-free photoconductive terahertz emitter composed of a bilayer InAs structure directly grown on a high-resistivity silicon substrate. The bilayer InAs structure includes p + -doped and undoped InAs layers, inducing a strong built-in electric field that enables terahertz generation without requiring any external bias voltage. A large-area plasmonic nanoantenna array is used to enhance and confine optical generation inside the photoconductive region with the highest built-in electric field, leading to the generation of a strong ultrafast photocurrent and broadband terahertz radiation. Thanks to a higher terahertz transmission through the silicon substrate and a shorter carrier lifetime in the InAs layers grown on silicon, higher signal-to-noise ratios are achieved at high terahertz frequencies compared with previously demonstrated bias-free terahertz emitters realized on GaAs. In addition to compatibility with silicon integrated optoelectronic platforms, the presented bias-free photoconductive emitter provides more than a 6 THz radiation bandwidth with more than 100 dB dynamic range when used in a terahertz time-domain spectroscopy system.

42 ENGINEERING↗
DOE OSTI2022

Structural and optical properties of cubic GaN on U-grooved Si (100)

Cubic GaN epitaxy on large-area U-grooved silicon (100) dies is demonstrated by metalorganic chemical vapor deposition, and its structural and optical properties are reported. Scanning electron, atomic force, and transmission electron microscopy studies reveal that cubic GaN shows no discernible threading dislocations and a low stacking fault density of 3.27 ± 0.18 × 10 4 cm –1 . Temperature-dependent photoluminescence studies reveal as-grown cubic GaN band edge emission internal quantum efficiency as 25.6% ± 0.9%. Selective etching of the low-temperature AlN buffer layer, SiO 2 sidewalls, and hexagonal-phase GaN is demonstrated, which increases the cubic GaN band edge emission internal quantum efficiency to 31.6% ± 0.8%. This increase is attributed to the decrease in the radiative recombination lifetime via the removal of defective hexagonal-phase GaN. Altogether, cubic GaN on U-grooved silicon with high structural and optical quality is reported, promising its suitability for next-generation devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗
DOE OSTI2023

Measurement of 2D density profiles using a second-harmonic, dispersion interferometer

A second-harmonic, dispersion interferometer is used to image large-area (≃5 cm 2 ) plasma-jet and gas-jet density profiles. Achromatic telescopes magnify the diameters of the primary-laser beam (1064 nm) and its second-harmonic (532 nm) before probing the sample and de-magnify the beam diameters after the sample, where the primary beam transfers its phase change to a second, second-harmonic beam, allowing the sample’s dispersive-phase change to be measured between two, orthogonally polarized second harmonic beams. The telescopes produce an azimuthally symmetric, dispersive-phase shift in the sample + background phase-change image and in the background phase-change image, which is removed by digital subtraction. The interferometer’s performance was verified using standard-optical components as dispersive elements (BK7 lenses and wedge plates), resolving a minimum, phase-change sensitivity of ΔΦ min ≳ 15 mrad and spatial resolution of Δx res ≃ 100 μm. The phase change produced by unknown-density objects (a pulsed-plasma-jet and a pulsed-gas-jet) was measured, and their data were used to recover the original, 2D density profiles using an inverse Abel transform: peak-number density, N gas ≃ 6 × 10 20 cm –3 and N e ≃ 5 × 10 16 cm –3 ; line-integrated density, ∫N gas dl ~ 2 × 10 19 cm –2 and ∫N e dl ~ 1 × 10 16 cm –2 . The techniques and methods developed here are scalable to even larger probe-beam diameters and frame-capture rates, leading to a diagnostic capability that is well-suited for applications involving the real-time measurement of density.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Design of the Lanthanum hexaboride based plasma source for the large plasma device at UCLA

The Large Plasma Device (LAPD) at UCLA (University of California, Los Angeles) produces an 18 m long, magnetized, quiescent, and uniform plasma at a high repetition rate to enable studies of fundamental plasma physics. Here, we report on a major upgrade to the LAPD plasma source that allows for more robust operation and significant expansion of achievable plasma parameters. The original plasma source made use of a heated barium oxide (BaO) coated nickel sheet as an electron emitter. This source had a number of drawbacks, including a limited range of plasma density (≲4.0 × 10 12 cm −3 ), a limited discharge duration (∼10 ms), and susceptibility to poisoning following oxygen exposure. Further, the new plasma source utilizes a 38 cm diameter lanthanum hexaboride (LaB 6 ) cathode, which has a significantly higher emissivity, allowing for a much larger discharge power density, and is robust to exposure to air. Peak plasma density of up to 3.0 × 10 13 cm −33 in helium gas has been achieved. The typical operating pressure is ∼10 −5 Torr, while dynamic pressure can be achieved through the gas-puffing technique. Discharges as long as 70 ms have been produced, enabling a variety of long-time-scale studies of processes, such as turbulent particle transport. The new source has been in continuous operation for 14 months, having survived air leaks, power outages that led to rapid temperature changes on the cathode and heater, and planned machine openings. We describe the design, construction, and initial operation of this novel new large-area LaB6 plasma source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Multimodal microscopy of extended defects in β-Ga 2 O 3 (010) EFG crystals

Beta-phase gallium oxide (β-Ga 2 O 3 ) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga 2 O 3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga 2 O 3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.

14 SOLAR ENERGY↗
DOE OSTI2024

Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

We present site-coincident imaging of a high dislocation density boron-doped chemical vapor deposition-grown homoepitaxial (001) diamond film using electron channeling contrast imaging (ECCI), cathodoluminescence, transmission electron microscopy (TEM), and scanning secondary ion mass spectroscopy (SIMS). With growing interest in large area heteroepitaxial substrates, we show that ECCI is a promising technique to accurately evaluate dislocations in diamond films. We find the electron backscatter yield is sufficient to distinguish individual threading dislocations in ECCI despite the low atomic number of carbon, and we have generally good agreement between dislocations observed in ECCI and TEM of the same region. Importantly, relying on luminescence in the 430 nm dislocation-related A-band alone results in an underestimation of the defect density as we find only 20%–40% of the threading dislocations luminesce. Here, we further show that dislocations do not perturb the spatial uniformity of boron doping measured by SIMS, even when the dislocations are clustered with high density, and we can tentatively rule out strong segregation effects at the dislocations. Our results establish the complementary use of microscopy and microanalysis methods to rapidly characterize and understand the impact of dislocations in diamond thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Developing a robust sensor for infrared imaging bolometers

A new type of large area sensor for infrared imaging bolometers has been developed. It replaces the thin and fragile free-standing metal foils, which typically have been used, with a multi-layer coated sapphire (or diamond) substrate. Sapphire is transparent to mid-infrared wavelengths, is robust against transients, and can be thick enough to even be the vacuum window. The primary radiation absorber is still a thin deposited metal layer, but now it is partially insulated from the supporting sapphire substrate by a black (carbon-based) layer, which also acts as a blackbody remitter. Test results indicate 6× more noise equivalent power density (estimated NEPD = 23 W/m 2 at 5 ms camera exposure time, foil temperature decay time 60 ms) for a 2 μm gold-coated sapphire disk compared to estimated NEP = 4 W/m 2 at 1.8 ms exposure time, with foil decay time 420 ms, for a nominal 2.5 μm thick platinum-free-standing foil.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Optical design and efficiency measurement of an extreme ultraviolet high-resolution spectrometer for unresolved transition array research

Understanding the structures of the unresolved transition array (UTA) observed in extreme ultraviolet (EUV) spectra from many-electron atoms is crucial for various applications, including fusion science and nanolithography. Here, to measure the fine structure of the UTA from tungsten and tin at around 5 and 13.5 nm at the Tokyo electron beam ion trap, we developed a high-resolution EUV spectrometer. The designed spectrometer achieves a resolving power of λ/dλ > 5000 at 5 and 13.5 nm. The fabricated large-area grating was experimentally examined at beamline BL5B of the UVSOR synchrotron facility to evaluate the diffraction efficiencies and their variation across the ruled area. The measured diffraction efficiencies are 0.65% ± 0.07% at 5 nm (second order) and 7.9% ± 0.2% at 13.5 nm (first order). The variation in the diffraction efficiency across the ruled area is 2.2%, 13.6%, and 10.0% in zeroth, first, and second order diffractions, respectively. The discrepancies in diffraction efficiencies between the experiments and the calculations were 5.2%, 29%, and 35% for the zeroth, first, and second diffraction orders, respectively.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing

Single-crystal model systems are valuable tools to investigate fundamental material properties. In this work, we use molecular beam epitaxy to deposit in situ arsenic (As) doped single-crystal CdTe films on large area Si substrates to better understand As doping for photovoltaic applications. We found that As incorporation is highly temperature dependent: a substrate temperature difference of 50 °C can lead to several orders of magnitude difference in As concentration. Cd overpressure during in situ doping may limit out-diffusion of As but decrease As incorporation, especially at lower growth temperatures. Carrier concentrations greater than 10 16 cm −3 can be achieved with or without Cd overpressure when annealed at temperatures above 500 °C. However, unlike the low (∼1% to 5%) dopant activation commonly observed in polycrystalline CdTe, our films achieve significantly higher activation ratios—exceeding 50%, and in some cases approaching 80%. These values are consistent with or exceed prior reports in single-crystal CdTe systems. In addition to as-deposited arsenic concentrations, we also consider arsenic distribution after different rapid thermal processing temperatures. We propose a detailed definition and description of how arsenic incorporation is considered and calculated. Due to carrier concentration saturation, As incorporation also needs to be controlled to average levels of 10 17 cm −3 to achieve high activation. These findings suggest that higher annealing temperature regimes may be beneficial to polycrystalline CdTe based PV devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Epitaxial growth of conducting perovskite SrTiO3 on (0001) c-axis sapphire using a γ-Al2O3 intermediate layer

Epitaxial growth of complex oxides on large-area wafers, such as sapphire and silicon, represents a key step toward scalable oxide device production. Solid phase epitaxy allows the synthesis of γ-Al 2 O 3 on α-Al 2 O 3 and provides a template with a matched lattice constant and appropriate cubic symmetry for subsequent heteroepitaxial growth of perovskite complex oxides. Nb-doped SrTiO 3 thin films were deposited epitaxially on (111)-oriented γ-Al 2 O 3 intermediate layers on (0001) c-axis-oriented sapphire α-Al 2 O 3 crystals using pulsed laser deposition. The Nb:SrTiO 3 thin films with a thickness of 53 nm, grown at 700 °C on γ-Al 2 O 3 , reached fully relaxed lattice parameters and were epitaxially oriented with respect to the substrate. Nb:SrTiO 3 layers deposited using identical deposition conditions directly on α-Al 2 O 3 , without the γ-Al 2 O 3 intermediate layer, were polycrystalline. The sheet conductivity of Nb:SrTiO 3 grown on γ-Al 2 O 3 /α-Al 2 O 3 is more than ten times higher than that of Nb:SrTiO 3 grown directly on α-Al 2 O 3 without the γ-Al 2 O 3 layer. The results point to new directions for the integration of (111)-oriented pseudocubic perovskite complex oxides and the integration of epitaxial complex oxides over larger areas using α-Al 2 O 3 single-crystal substrates.

Atomic force microscopy↗
DOE OSTI2022

Dynamic circular birefringence response with fractured geometric phase metasurface systems

Optical activity is a fundamental property of symmetry-broken three-dimensional systems and enables control of the polarization state of electromagnetic waves. This work introduces a type of reconfigurable geometric phase response in which shearing displacements between two Pancharatnam–Berry-phase metasurfaces transduce chiral symmetry breaking within nanoscale waveguide structures. These metasurface systems, termed fractured metasurface waveplates, can be tailored to support dynamically tunable, broadband circular birefringence responses. Polarization modulation is based on microscopic motions and uniquely enables high-speed modulation over large area apertures. Our system paves the way for new classes of nanophotonic devices that feature systems-level symmetry breaking for controlling electromagnetic waves, which is relevant for sensing, imaging, and quantum-control applications.

42 ENGINEERING↗
DOE OSTI2023

Drying of tundra landscapes will limit subsidence-induced acceleration of permafrost thaw

We used a model for permafrost hydrology informed by detailed measurements of soil ice content to better understand the potential risk of abrupt permafrost thaw triggered by melting ground ice, a key open question associated with permafrost response to a warming Arctic. Our spatially resolved simulations of a well-characterized site in polygonal tundra near Utqiaġvik, Alaska, agree well with multiple types of observations in the current climate. Projections indicate 63 cm of bulk subsidence from 2006 to 2100 in the strong-warming Representative Concentration Pathway 8.5 climate. Permafrost thaw as measured by the increase in active layer thickness (ALT)—the thickness of the soil layer that thaws each summer—is accelerated by subsidence, but the effect is relatively small. The ALT increases from the current-day value of approximately 50 cm to approximately 180 cm by 2100 when subsidence is included compared to about 160 cm when it is neglected. In these simulations, previously identified positive feedbacks between subsidence and thaw are self-limiting on decadal time frames because landscape runoff and increasing evapotranspiration result in drier tundra with weaker surface/atmosphere coupling. These results for a tundra site that is representative of large swathes of the Alaska North Slope suggest that subsidence is unlikely to lead to abrupt thaw over large areas. However, subsidence does have significant effects on the hydrology of polygonal tundra. Specifically, subsidence increases landscape runoff, which helps maintain streamflow in the face of increased evapotranspiration but also causes drier tundra conditions that could have deleterious effects on sensitive Arctic wetland ecosystems.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Frequency-domain computing using nonlinear acoustic-wave device on lithium niobate

Abstract Multiply-accumulation are crucial computing operations in signal processing, numerical simulations, and machine learning. In recent years, optical analog approaches have demonstrated higher computing performance and better power efficiency than their digital counterparts. However, analog computing chips usually need large areas and complex structures for parallel computing, as a single device element only executes one computing operation at a single time. Here, we demonstrate frequency-domain computing using the nonlinear acoustic-wave devices on lithium niobate, featuring a normalized external second-harmonic generation conversion efficiency of ~ 5.7 × 10-4 W-1. The second-order sum-frequency nonlinear process of lithium niobate enables multiplication of inputs encoded in the frequency domain. Compared to the analog schemes, our device features a notably simpler design, and nanofabrication requires only one lift-off. Using a single acoustic-wave device within an area of 0.03 mm2, we can simultaneously conduct over 130,000 multiply-accumulation operations. Our acoustic-wave device shows applications in real and complex vector convolutions and image processing. This demonstration sets the stage for experimental realizations into frequency-domain integrated nonlinear acoustic computing systems, potentially shaping future developments in acoustic neural networks and quantum computing.

chai, mingzhao (ORCID:0009000466226341)↗
DOE OSTI2024

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thin film block copolymer self-assembly for nanophotonics

The nanophotonic engineering of light–matter interactions has profoundly changed research behind the design and fabrication of optical materials and devices. Metasurfaces—arrays of subwavelength nanostructures that interact resonantly with electromagnetic radiation—have emerged as an integral nanophotonic platform for a new generation of ultrathin lenses, displays, polarizers and other devices. Their success hinges on advances in lithography and nanofabrication in recent decades. While existing nanolithography techniques are suitable for basic research and prototyping, issues of cost, throughput, scalability, and substrate compatibility may preclude their use for many metasurface applications. Patterning via spontaneous self-assembly of block copolymer thin films offers an enticing alternative for nanophotonic manufacturing that is rapid, inexpensive, and applicable to large areas and diverse substrates. This review discusses the advantages and disadvantages of block copolymer-based nanopatterning and highlights recent progress in their use for broadband antireflection, surface enhanced Raman spectroscopy, and other nanophotonic applications. Here recent advances in diversification of self-assembled block copolymer nanopatterns and improved processes for enhanced scalability of self-assembled nanopatterning using block copolymers are also discussed, with a spotlight on directions for future research that would enable a wider array of nanophotonic applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗