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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.

Kamath, S.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS1980

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Vonross, O.↗
NASA NTRS1980

Fabrication of AlGaAs/GaAs cascade solar cell by LPE

Stacking two or more photovoltaic junctions in electrical and optical series results in higher conversion efficiency since each junction can be tailored to respond more efficiently to a smaller range of photon energies. An efficiency of about 30 percent was predicted for a two junction cascade cell having the optimum bandgap values. A number of III-V materials systems were considered for use in fabricating cascade solar cells. The Al-Ga-As system is attractive from a developmental standpoint since it employs a proven materials system that is closely lattice matched throughout its compositional range. This system employs a GaAs low bandgap cell and 1.9 eV AlGaAs high bandgap cell connected by an AlGaAs tunnel junction. Although this cell does not possess the optimum bandgap values, an efficiency of 25 percent was predicted at 300 K under AMO, 1 sun illumination.

Bedair, S. M.↗
NASA NTRS1981

Coplanar back contacts for thin silicon solar cells

The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

Storti, G.↗
NASA NTRS1981

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Daud, T.↗
NASA NTRS1982

Heat transparent high intensity high efficiency solar cell

An improved solar cell design is described. A surface of each solar cell has a plurality of grooves. Each groove has a vertical face and a slanted face that is covered by a reflecting metal. Light rays are reflected from the slanted face through the vertical face where they traverse a photovoltaic junction. As the light rays travel to the slanted face of an adjacent groove, they again traverse the junction. The underside of the reflecting coating directs the light rays toward the opposite surface of solar cell as they traverse the junction again. When the light rays travel through the solar cell and reach the saw toothed grooves on the under side, the process of reflection and repeatedly traversing the junction again takes place. The light rays ultimately emerge from the solar cell. These solar cells are particularly useful at very high levels of insolation because the infrared or heat radiation passes through the cells without being appreciably absorbed to heat the cell.

Evans, J. C., Jr.↗
NASA NTRS1984

K-Band Latching Switches

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

Piotrowski, W. S.↗
NASA NTRS1989

Fatigue delamination onset prediction in tapered composite laminates

Tapered (0 deg) laminates of S2/CE9000 and S2/SP250 glass/epoxies, and IM6/1827I graphite/epoxy were tested in cyclic tension. The specimens usually showed some initial stable delaminations in the tapered region, but these did not affect the stiffness of the specimens, and loading was continued until the specimens either delaminated unstably, or reached 10(exp 6) to 2 x 10(exp 7) million cycles with no unstable delamination. The final unstable delamination originated at the junction of the thin and tapered regions. A finite-element model was developed for the tapered laminate with and without the initial stable delaminations observed in the tests. The analysis showed that for both cases the most likely place for an opening (Mode 1) delamination to originate is at the junction of the taper and thin regions. For each material type, the models were used to calculate the strain energy release rate, G, associated with delaminations originating at that junction and growing either into the thin region or tapered region. For the materials tested, cyclic G(sub Imax) values from DCB tests were used with the maximum strain energy release rates calculated from the finite-element analysis to predict the onset of unstable delamination at the junction as a function of fatigue cycles. The predictions were compared to experimental values of maximum cyclic load as a function of cycles to unstable delamination from fatigue tests in tapered laminates. For the IM6/1827I and S2/SP250 laminates, the predictions agreed very well with the test data. Predicted values for the S2/CE9000 were conservative compared to the test data.

Murri, Gretchen Bostaph↗
NASA NTRS1989

Characterization of multiple-bit errors from single-ion tracks in integrated circuits

The spread of charge induced by an ion track in an integrated circuit and its subsequent collection at sensitive nodal junctions can cause multiple-bit errors. The authors have experimentally and analytically investigated this phenomenon using a 256-kb dynamic random-access memory (DRAM). The effects of different charge-transport mechanisms are illustrated, and two classes of ion-track multiple-bit error clusters are identified. It is demonstrated that ion tracks that hit a junction can affect the lateral spread of charge, depending on the nature of the pull-up load on the junction being hit. Ion tracks that do not hit a junction allow the nearly uninhibited lateral spread of charge.

Zoutendyk, J. A.↗
NASA NTRS1989

Mathematical optimization of photovoltaic converters for diode lasers

The mathematical optimization of vertical-junction photovoltaic converters for use with diode laser arrays supplying powers up to 1 MW is discussed. Photovoltaic parameters were optimized using a mathematical model. The optimized converters have 500 single junctions connected in series. The efficiency varies from 41 percent for a 0.73-micron diode laser to 46 percent for a 0.83-micron diode laser. The optimum width of the single-junction converter is small, 3.0 microns, in order for the p-n junction to be within a diffusion length of the light-generated carriers. Another critical parameter is the series resistance; the optimum value of 0.001 ohms should be achievable. Another critical parameter is the donor carrier concentration, for which an optimum value of 5 x 10 to the 15th carriers/cu cm has been chosen.

Walker, Gilbert H.↗
NASA NTRS1991

Fatigue delamination onset prediction in unidirectional tapered laminates

Tapered (0 deg) laminates of S2/CE9000 and S2/SP250 glass/epoxies, and IM6/1827I graphite/epoxy were tested in cyclic tension. The specimens usually showed some initial stable delaminations in the tapered region, but these did not affect the stiffness of the specimens, and loading was continued until the specimens either delaminated unstably, or reached 10(exp 6) to 2 x 10 (exp 7) million cycles with no unstable delamination. The final unstable delamination originated at the junction of the thin and tapered regions. A finite-element model was developed for the tapered laminate with and without the initial stable delaminations observed in the tests. The analysis showed that for both cases the most likely place for an opening (Mode I) delamination to originate is at the junction of the taper and thin regions. For each material type, the models were used to calculate the strain energy release rate, G, associated with delaminations originating at that junction and growing either into the thin region or tapered region. For the materials tested, cyclic G(sub Imax) values from DCB tests were used with the maximum strain energy release rates calculated from the finite-element analysis to predict the onset of unstable delamination at the junction as a function of fatigue cycles. The predictions were compared to experimental values of maximum cyclic load as a function of cycles to unstable delamination from fatigue tests in tapered laminates. For the IM6/1827I and S2/SP250 laminates, the predictions agreed very well with the test data. Predicted values for the S2/CE9000 were conservative compared to the test data.

Murri, Gretchen B.↗
NASA NTRS1994

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗
NASA NTRS1995

Effects of oxygen stoichiometry on the scaling behaviors of YBa2Cu3O(x) grain boundary weak-links

The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa2Cu3O(x) bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealing processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e with x = 7.0 in YBa2Cu3O(x) stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g with x = 6.9 in YBa2Cu3O(x) stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.

Wu, K. H.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Schelman, David A.↗
NASA NTRS1996

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Romanofsky, Robert R.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗