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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Transient radiative cooling of a droplet-filled layer

A proposed lightweight radiator system for waste heat dissipation in space would eject streams of coolant in the form of small, hot liquid droplets. The droplets would lose radiative energy by direct exposure to the very low-temperature environment of space, and would then be collected for reuse. The cooling behavior of a layer composed of many small droplets was studied by numerical solution of the radiative integral equations. Since there is mutual interference for radiative energy dissipation, an array droplet will cool more slowly than if each drop is exposed individually. Since liquid metal droplets may be used, the study includes results for conditions with high scattering. For optically thin regions, especially with high scattering, the temperature distribution is sufficiently uniform that the cooling can be computed using the approximation of a constant layer emittance. For optically thick layers starting at uniform temperature, the temperature distributions become nonuniform with time. It was found that the cooling process goes through a starting transient; a constant emittance condition is then achieved where the emittance is lower than that for a layer at uniform temperature.

Siegel, R.↗
NASA NTRS1988

Automated data acquisition and processing for a Hohlraum reflectometer

A computer and data acquisition board were used to automate a Perkin-Elmer Model 13 spectrophotometer with a Hohlraum reflectivity attachment. Additional electronic circuitry was necessary for amplification, filtering, and debouncing. The computer was programmed to calculate spectral emittance from 1.7 to 14.7 micrometers and also total emittance versus temperature. Automation of the Hohlraum reflectometer reduced the time required to determine total emittance versus temperature from about three hours to about 40 minutes.

Difilippo, Frank↗
NASA NTRS1989

Vacuum microelectronics for beam power and rectennas

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Gray, Henry F.↗
NASA NTRS1990

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗
NASA NTRS1990

NCTM of liquids at high temperatures using polarization techniques

Temperature measurement and control is extremely important in any materials processing application. However, conventional techniques for non-contact temperature measurement (mainly optical pyrometry) are very uncertain because of unknown or varying surface emittance. Optical properties like other properties change during processing. A dynamic, in-situ measurement of optical properties including the emittance is required. Intersonics is developing new technologies using polarized laser light scattering to determine surface emittance of freely radiating bodies concurrent with conventional optical pyrometry. These are sufficient to determine the true surface temperature of the target. Intersonics is currently developing a system called DAPP, the Division of Amplitude Polarimetric Pyrometer, that uses polarization information to measure the true thermodynamic temperature of freely radiating objects. This instrument has potential use in materials processing applications in ground and space based equipment. Results of thermophysical and thermodynamic measurements using laser reflection as a temperature measuring tool are presented. The impact of these techniques on thermophysical property measurements at high temperature is discussed.

Krishnan, Shankar↗
NASA NTRS1991

Matching optics for Gaussian beams

A system of matching optics for Gaussian beams is described. The matching optics system is positioned between a light beam emitter (such as a laser) and the input optics of a second optics system whereby the output from the light beam emitter is converted into an optimum input for the succeeding parts of the second optical system. The matching optics arrangement includes the combination of a light beam emitter, such as a laser with a movable afocal lens pair (telescope) and a single movable lens placed in the laser's output beam. The single movable lens serves as an input to the telescope. If desired, a second lens, which may be fixed, is positioned in the beam before the adjustable lens to serve as an input processor to the movable lens. The system provides the ability to choose waist diameter and position independently and achieve the desired values with two simple adjustments not requiring iteration.

Gunter, William D.↗
NASA NTRS1993

Progress in p(+)n InP solar cells fabricated by thermal diffusion

The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.

Flood, D. J.↗
NASA NTRS1995

Miniature X-Ray Tubes

Miniature x-ray tubes proposed for use in portable instruments used to analyze minerals. Electrons from field emitter (instead of thermionic emitter) accelerated to target to generate x-rays. Fabricated from silicon wafers, micromachined field emitters (MFEs) not subject to breakage or restrictions on lifetimes, and tolerate vacuums that filaments cannot. Miniature x-ray tubes very robust, immune to shock and vibration, and permanently sealed with getter for continued pumping. Combined with solid-state x-ray detectors for analysis of x-ray fluorescence.

Bearman, Gregory H.↗
NASA NTRS1998

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the Monolithic Integrated Module (MIM) strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV, were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/ square cm were observed for an average emitter temperature of 1501 K.

Fatemi, Navid S.↗
NASA NTRS1999

A Precise Calibration Technique for Measuring High Gas Temperatures

A technique was developed for direct measurement of gas temperatures in the range of 2050 K - 2700 K with improved accuracy and reproducibility. The technique utilized the low-emittance of certain fibrous Materials, and the uncertainty of the technique was limited by the uncertainty in the melting points of the materials, i.e., +/- 15 K. The materials were pure, thin, metal-oxide fibers whose diameters varied from 60 mm to 400 mm in the experiments. The sharp increase in the emittance of the fibers upon melting was utilized as indication of reaching a known gas temperature. The accuracy of the technique was confirmed by both calculated low emittance values of transparent fibers, of order 0.01, up to a few degrees below their melting point and by the fiber-diameter independence of the results. This melting-point temperature was approached by increments not larger than 4 K, which was accomplished by controlled increases of reactant flow rates in hydrogen-air and/or hydrogen- oxygen flames. As examples of the applications of the technique, the gas-temperature measurements were used (a) for assessing the uncertainty in infering gas temperatures from thermocouple measurements, and (b) for calibrating an IR camera to measure gas temperatures. The technique offers an excellent calibration reference for other gas-temperature measurement methods to improve their accuracy and reliably extending their temperature range of applicability.

Gokoglu, Suleyman A.↗
NASA NTRS2000

A Precise Calibration Technique for Measuring High Gas Temperatures

A technique was developed for direct measurement of gas temperatures in the range of 2050 K 2700 K with improved accuracy and reproducibility. The technique utilized the low-emittance of certain fibrous materials, and the uncertainty of the technique was United by the uncertainty in the melting points of the materials, i.e., +/-15 K. The materials were pure, thin, metal-oxide fibers whose diameters varied from 60 microns to 400 microns in the experiments. The sharp increase in the emittance of the fibers upon melting was utilized as indication of reaching a known gas temperature. The accuracy of the technique was confirmed by both calculated low emittance values of transparent fibers, of order 0.01, up to a few degrees below their melting point and by the fiber-diameter independence of the results. This melting-point temperature was approached by increments not larger than 4 K, which was accomplished by controlled increases of reactant flow rates in hydrogen-air and/or hydrogen-oxygen flames. As examples of the applications of the technique, the gas-temperature measurements were used: (a) for assessing the uncertainty in inferring gas temperatures from thermocouple measurements, and (b) for calibrating an IR camera to measure gas temperatures. The technique offers an excellent calibration reference for other gas-temperature measurement methods to improve their accuracy and reliably extending their temperature range of applicability.

Gokoglu, Suleyman A.↗
NASA NTRS1999

MEMS Micropropulsion Activities at JPL

A status of MEMS-based micropropulsion activities conducted at JPL will be given. These activities include work conducted on the so called Vaporizing Liquid Micro-Thruster (VLM) which recently underwent proof-of-concept testing, demonstrating the ability to vaporize water propellant at 2 W and 2 V. Micro-ion engine technologies, such m field emitter arrays and micro-grids are being studied. Focus in the field emitter area is on arrays able to survive in thruster plumes and micro-ion engine plasmas to serve as neutralizers aW engine cathodes. Integrated, batch-fabricated Ion repeller grid structures are being studied as well as different emitter tip materials are being investigated to meet these goals. A micro-isolation valve is being studied to isolate microspacecraft feed system during long interplanetary cruises, avoiding leakage and prolonging lifetime and reliability of such systems. This concept relies on the melting of a thin silicon barrier. Burst pressure values as high as 2,900 psig were obtained for these valves and power requirements to melt barriers ranging between 10 - 50 microns in thickness, as determined through thermal finite element calculations, varied between 10 - 30 W to be applied over a duration of merely 0.5 ms.

Mueller, Juergen↗
NASA NTRS1998

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the MIM strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV,were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/sq cm were observed for an average emitter temperature of 1501 K.

Fatemi, Navid S.↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
NASA NTRS2002

Durability of Solar Selective Coatings in a Simulated Space Environment

Solar selective coatings are being considered for heat engine and thermal switching applications on minisatellites. Such coatings must have the combined properties of high solar absorptance and low infrared emittance. High solar absorptance is needed to collect solar energy as efficiently as possible while low infrared emittance is needed to minimize radiant energy loss at operating temperature. These properties are achieved in sputter deposited thin films through the use of molecular mixtures of metal and dielectric. Solar selective coatings having a solar absorptance to infrared emittance ratio of 9 have been successfully deposited using a mixture of nickel and aluminum oxide. The space environment, however, presents some challenges for the use of materials on the exterior of spacecraft, including durability to atomic oxygen and vacuum ultraviolet radiation. To address these concerns, several candidate solar selective coatings were exposed to atomic oxygen in a plasma asher and to ultraviolet radiation in a vacuum facility equipped with calibrated deuterium lamps. The optical properties of the coatings were monitored as a function of time to evaluate their performance over long term exposure to the simulated space environment. Several coatings were found to be durable to both the atomic oxygen and the vacuum ultraviolet environments.

Jaworske, Donald A.↗
NASA NTRS2004

James Webb Space Telescope (JWST) Integrated Science Instrument Module (ISIM) Cryogenic Component Test Facility

Contents include the following: James Webb Space Telescope/Integrated Science Instrument Module (JWST/ISIM) Overview. ISIM Thermal Verification Requirements. Emittance Test Objectives. Cryochamber Design Requirements. Cryochamber Construction. Emittance Test Sample Selection and Configuration. Error Sources and Error Mitigation. Cryochamber Operation. Cryochamber and Emittance Sample Test Results.

Packard, Edward A.↗
NASA NTRS1994

Thermophotovoltaic System Parametric Modeling

A small radioisotope powered TPV system was assumed. The system was simplified into a one-dimensional model with the emitter and heat rejection system as boundaries. Design equations were then developed which would allow parametric modeling of system efficiency, emitter radiation incident upon the TPV cell, energy converted in the TPV cell, and energy absorbed in the filter and cell-to-cell gaps. A figure of merit was then developed for the emitter, filter, and TPV cell.

thermophotovoltaic radioisotope TPV cells energy c↗
NASA NTRS2006

Characterization of Hollow Cathode Performance and Thermal Behavior

Hollow cathodes are one of the main life-limiting components in ion engines and Hall thrusters. Although state-of-the-art hollow cathodes have demonstrated up to 30,352 hours of operation in ground tests with careful handling, future missions are likely to require longer life, more margin and greater resistance to reactive contaminant gases. Three alternate hollow cathode technologies that exploit different emitter materials or geometries to address some of the limitations of state-of-the-art cathodes are being investigated. Performance measurements of impregnated tungsten-iridium dispenser cathodes at discharge currents of 4 to 15 A demonstrated that they have the same operating range and ion production efficiency as conventional tungsten dispenser cathodes. Temperature measurements indicated that tungsten-iridium cathodes also operate at the same emitter temperatures. They did not exhibit the expected reduction in work function at the current densities tested. Hollow cathodes with lanthanum hexaboride emitters operated over a wide current range, but suffered from lower ion production efficiency at currents below about 12.4 A because of higher insert heating requirements. Differences in operating voltages and ion production rates are explained with a simple model of the effect of cathode parameters on discharge behavior.

ion engines↗