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DOE OSTI2022

Transverse Single Spin Asymmetries of Heavy Flavor Electrons and Charged Pions in 200 GeV $p+p^{\uparrow}$ Collisions at Midrapidity

Transverse single spin asymmetries of particles produced in p+p^{\uparrow} p + p ↑ collisions provide insight on the partonic spin and momentum structure of hadrons; heavy flavor electrons provide access to initial state spin-momentum correlations of gluons in the proton, while charged pions provide access to initial and final state transverse spin effects. Charged particles are measured at midrapidity at PHENIX using the silicon vertex detector and central arm spectrometer, made of an electromagnetic calorimeter, a ring-imaging Cherenkov detector, and drift and pad chambers. Recent results for both electron and charged pion measurements from the 2015 running period will be presented.

Fitzgerald, Dillon↗

DOE OSTI2024

Spin-Dependent Electrochemistry

Recent experiments that use spin polarized electron currents to improve the selectivity and enantioselectivity of electrochemical reactions are described. Electrochemical studies with both chiral working electrodes and with magnetic working electrodes are used to generate spin polarized electron currents. Studies with chiral electrodes, which are formed through the adsorption of chiral molecules and through the growth of chiral oxide films, are shown to improve the efficiency and selectivity of the oxygen evolution reaction and oxygen reduction reaction. These improvements are attributed to the exploitation of spin selection rules (triplet vs. singlet pathways) in the reaction mechanism. Studies with magnetic electrodes, which are formed through ferromagnetic/Au thin film electrodes, are reported to initiate enantioselective chemical transformations, and three different cases are discussed here (enantioresolution of a racemic mixture, enantioselective polymer grafting on electrode surfaces, and the generation of achiral carbon centers). The addition of spin control to the conventional control over charge currents provides an added dimension to electrochemistry and electrosynthesis.

Waldeck, David H↗

DOE OSTI2023

Pure spin current injection of single-layer monochalcogenides

We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron's spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s -1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, e.g., GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.

2D-monochalcogenides↗

DOE OSTI2023

Electronic structure, magnetic properties, spin orientation, and doping effect in Mn 3 Si 2 Te 6

The layered material Mn 3 Si 2 Te 6 , with alternating stacking honeycomb and triangular layers, is attracting considerable attention due to its rich physical properties. Here, in this study, using density functional theory and classical Monte Carlo (MC) methods, we systematically study this system with the 3d 5 electronic configuration. Near the Fermi level, the states are mainly contributed by Te 5p orbitals hybridized with Mn 3d orbitals, resembling a charge-transfer system. Furthermore, the spin orientations of the ferrimagnetic (FiM) ground state display different conductive behaviors when along the ab plane or out-of-plane directions: insulating vs metallic states. The energy difference between the FiM [110] insulating and FiM [001] metallic phases is very small (~0.71 meV/Mn) . Changing the angle θ of spin orientation from in-plane to out-of-plane directions, the band gaps of this system are gradually reduced, leading to an insulator-metal transition, resulting in an enhanced electrical conductivity, related to the colossal angular magnetoresistance (MR) effect. Although the three main magnetic couplings were found to be antiferromagnetic, overall the ground state is FiM. In addition, we also constructed the magnetic phase diagram using the classical XY spin model studied with the MC method. Three magnetic phases were obtained, including antiferromagnetic order, noncollinear spin patterns, and FiM order. Moreover, we also investigated the Se and Ge doping into the Mn 3 Si 2 Te 6 system: the FiM state has the lowest energy among the magnetic candidates for both Se- and Ge-doped cases. The magnetic anisotropy energy (MAE) decreases in the Se-doped case because the Mn orbital moment is reduced as the doping x increases. Due to the small spin-orbit-coupling effect of Se, the insulator-metal transition caused by the spin orientation disappears in the Se-doped case, resulting in an insulating phase in the FiM [001] phase. This causes a reduced colossal angular MR. However, both the MAE and the band gap of the Ge-doped case do not change much with increasing doping x . Our results for Mn 3 Si 2 Te 6 could provide guidance to experimentalists and theorists working on this system or related materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy center in diamond (SnV − ) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV − ’s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 K. Here, we demonstrate measurement of a single SnV − electronic spin with a single-shot readout fidelity of 87.4%, which can be further improved to 98.5% by conditioning on multiple readouts. In the process, we develop understanding of the relationship between strain, magnetic field, spin readout, and microwave spin control. We show that high-fidelity readout is compatible with rapid microwave spin control, demonstrating a favorable parameter regime for use of the SnV − center as a high-quality spin-photon interface. Finally, we use weak quantum measurement to study measurement-induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and provides a universal method to characterize the efficiency of color-center spin readout. Taken together, these results overcome an important hurdle in the development of the SnV − -based quantum technologies and, in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO 3

The high-temperature spin and electronic transitions in LaCoO 3 have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO 3 at device-relevant temperatures (25–325 °C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al 2 O 3 coating, which prevents unwanted reduction of the LaCoO 3 specimen at high temperature and vacuum. The detailed understanding of LaCoO 3 transition dynamics enabled by such measurements will be crucial for optimizing LaCoO 3 -based neuromorphic devices and increasing reliability for real-world application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Uniaxial Spin Texture in a Superconducting Electron Gas Revealed by Exchange Interactions

Two-dimensional (2D) superconductors with spin-textured Fermi surfaces can be a platform for realizing unconventional pairing states and are of substantial interest in the context of quantum information science and superconducting spintronics/orbitronics. We observed an unusual in-plane uniaxial anisotropy in the superconducting 2D electron gas (2DEG) formed at EuOx/KTaO3 (110) interfaces. This anisotropy is not evident in AlOx/KTaO3 (110) where the overlayer is nonmagnetic. Our results are consistent with a highly anisotropic “half-Rashba” spin-textured Fermi surface in 2DEGs formed at the KTaO3 (110) interface that is hidden from external magnetic fields due to a near cancellation between orbital and spin moments but revealed by exchange interactions of the electrons in the 2DEG with Eu moments near the EuOx/KTaO3 (110) interface. The interactions between the uniaxial spin texture and the magnetic overlayer offer previously unexplored ways to explore the interplay between magnetism and 2D superconductivity.

Yang, Junyi↗

DOE OSTI2025

Ground and excited state properties of ThB − and ThB: a theoretical study

In the present work, we studied a series of electronic and spin–orbit states of ThB − and ThB using high-level multireference and coupled-cluster theories. We report the potential energy curves (PECs), equilibrium electron configurations, spectroscopic constants, energetics, and spin–orbit coupling effects of 17 and 19 electronic states of ThB − and ThB, respectively. The ground state of ThB − is a single-reference 1 3 Π with a 1σ 2 2σ 2 3σ 1 1π 3 electron configuration. Detachment of an electron from the doubly occupied 1π orbital of ThB − (1 3 Π) produces the single-reference ground electronic state of ThB (1 4 Σ − ). The ground spin–orbit states of ThB − and of ThB are 1 3 Π + 0 and 1 4 Σ − 3/2 , respectively. The vertical electron detachment energy (VDE) of ThB − and the adiabatic electron attachment energy (AEA) of ThB at our largest CBS-C-CCSD(T)+δT(Q)+δSO (complete basis set effect, spin–orbit effect, and triple and perturbative quadruple electron correlation effect added coupled-cluster theory with single, double, and perturbative triple excitations) level are 1.473 eV and 1.459, respectively. The reaction of Th( 3 F) + B( 2 P o ) produces the ground state of ThB with a bond energy of 2.843 eV. Finally, we estimated a heat of formation, Δ H 0 f (298 K), of 891.01 kJ mol −1 for the ThB molecule. The high-level findings of this work are expected to aid and motivate future experimental spectroscopic investigations of ThB and ThB − species.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Half-Metal Spin Filter for Highly Polarized Emission from GaAs Photocathodes

GaAs-based photocathodes are one of the major sources of spin-polarized electrons and are crucial for the upcoming Electron-Ion collider experiments which includes study of proton spin and spin parity violation in the standard model. The theoretical polarization limit in unstrained GaAs photocathodes is 50 % but only 35 % is routinely achieved in experiments. Spin selective filtering allows to boost the spin polarization beyond the 50 % theoretical limit. In this work, first-principle electronic calculations using standard Density Functional Theory are performed to predict possible Heusler alloy half-metal candidates to be used as spin-filter. Simulations are also performed to investigate the half-metallicity as function of the magnetic spin direction. Several devices are experimentally fabricated using dedicated Molecular Beam Epitaxy growth system. We implemented Quantum Efficiency and Polarization testing of these half-metal/GaAs heterostructures using a dedicated Mott polarimeter system. Photoemission can also be seen on magnetically switching the spin-filter direction accompanied by a change in sign of the asymmetry which is a qualitative proof of the spin-filtering effect.

Poddar, S.↗

DOE OSTI2023

A Compton transmission polarimeter for DC and SRF electron photo-injectors

The production of high-current and intense spin polarized electron beams is of great importance in electron-based facilities. Tests are planned to produce such beams in 2023 using GaAs-based photocathodes installed in the Brookhaven National Lab RHIC Coherent electron Cooling superconducting radiofrequency (SRF) photogun [1]. A fast and efficient electron polarimeter operating in the MeV energy range is required to measure the beam spin polarization. While Mott polarimeters provide larger measured asymmetries, a Compton Transmission polarimeter is well suited in the few MeV energy range. In this work, we report on a relatively compact and cost-effective Compton transmission polarimeter which has been built and calibrated at Jefferson Lab (JLab). First, we present the design of the polarimeter radiator, polarized target analyzing magnet, BGO detector assembly and data acquisition system. Next, results of a two-week commissioning study performed at the JLab Upgraded Injector Test Facility will be described. Here, a well-known polarized electron beam produced from a bulk GaAs photocathode in a dc high-voltage photogun was first measured in a 180 keV Mott scattering polarimeter, then used to characterize and calibrate the Compton transmission polarimeter as a function of the polarized target magnetization and beam properties. Finally, we report an effective analyzing power of the Compton polarimeter and compare experimental results with those produced via Geant4 simulations.

Blume, G.↗

DOE OSTI2023

A Compton transmission polarimeter for DC and SRF electron photo-injectors

Blume, G.↗

DOE OSTI2022

High-Precision Mapping of Diamond Crystal Strain Using Quantum Interferometry

Crystal-strain variation imposes significant limitations on many quantum sensing and information applications for solid-state defect qubits in diamond. Thus, the precision measurement and control of diamond crystal strain is a key challenge. Here, we report diamond strain measurements with a unique set of capabilities, including micron-scale spatial resolution, a millimeter-scale field of view, and a 2-order-of-magnitude improvement in volume-normalized sensitivity over previous work, reaching 5(2)×10 -8 /√Hzμm -3 (with spin-strain coupling coefficients representing the dominant systematic uncertainty). We use strain-sensitive spin-state interferometry on ensembles of nitrogen-vacancy (N-V) color centers in single-crystal bulk diamond with low strain gradients. This quantum interferometry technique provides insensitivity to magnetic-field inhomogeneity from the electronic and nuclear spin bath, thereby enabling long N-V–ensemble electronic spin dephasing times and enhanced strain sensitivity, as well as broadening the potential applications of the technique beyond isotopically enriched or high-purity diamond. We demonstrate the strain-sensitive measurement protocol first on a confocal scanning laser microscope, providing quantitative measurement of sensitivity as well as three-dimensional strain mapping; and second on a wide-field-imaging quantum diamond microscope. Our strain-microscopy technique enables fast, sensitive characterization for diamond material engineering and nanofabrication; as well as diamond-based sensing of strains applied externally, as in diamond anvil cells or embedded diamond stress sensors, or internally, as by crystal damage due to particle-induced nuclear recoils.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li 0.5 Al 1.0 Fe 1.5 O 4 (LAFO) films on MgGa 2 O 4 (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Solenoidal Fields from Permanent Magnets for a Polarized Electron Preinjector

This technical note describes the design of a compact focusing solenoid constructed from permanent bar magnets, intended for the low-energy section of a spin-polarized electron injector. Typically, quadrupole triplets provide appropriate focusing for the low-energy spin rotator section; however, their large footprint precludes the insertion of sufficient beam diagnostics. The primary motivation of this study is to provide beam focusing while preserving the vertical spin orientation of the electron beam. We propose a solenoidal field composed of multiple permanent magnets arranged to naturally yield a zero longitudinal magnetic field integral ($\int B_zdz = 0$). This design serves as a compact, passive, and non-coupling alternative to traditional quadrupole triplets. We present the magnet arrangement, field calculation methodology, spin tracking simulations using space charge codes, and calculations demonstrating that the required field strength is achievable.

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

Ultrafast optically induced spin transfer in ferromagnetic alloys

The vision of using light to manipulate electronic and spin excitations in materials on their fundamental time and length scales requires new approaches in experiment and theory to observe and understand these excitations. The ultimate speed limit for all-optical manipulation requires control schemes for which the electronic or magnetic subsystems of the materials are coherently manipulated on the time scale of the laser excitation pulse. In our work, we provide experimental evidence of such a direct, ultrafast, and coherent spin transfer between two magnetic subsystems of an alloy of Fe and Ni. Our experimental findings are fully supported by time-dependent density functional theory simulations and, hence, suggest the possibility of coherently controlling spin dynamics on subfemtosecond time scales, i.e., the birth of the research area of attomagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Pressure induced modification of electronic and magnetic properties of MnCrNbAl and MnCrTaAl

Spin-gapless semiconductor (SGS) is a new class of material that has been studied recently for potential applications in spintronics. This material behaves as an insulator for one spin channel, and as a gapless semiconductor for the opposite spin. In this work, we present results of a computational study of two quaternary Heusler alloys, MnCrNbAl and MnCrTaAl that have been recently reported to exhibit spin-gapless semiconducting electronic structure. In particular, using density functional calculations we analyze the effect of external pressure on electronic and magnetic properties of these compounds. It is shown that while these two alloys exhibit nearly SGS behavior at optimal lattice constants and at negative pressure (expansion), they are half-metals at equilibrium, and magnetic semiconductors at larger lattice constant. At the same time, reduction of the unit cell volume has a detrimental effect on electronic properties of these materials, by modifying the exchange splitting of their electronic structure and ultimately destroying their half-metallic/semiconducting behavior. Thus, our results indicate that both MnCrNbAl and MnCrTaAl may be attractive for practical device applications in spin-based electronics, but a potential compression of the unit cell volume (e.g. in thin-film applications) should be avoided.

Materials Science↗

DOE OSTI2021

Quantum guidelines for solid-state spin defects

Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material,on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters,providing a broad guideline for the field of solid-state spin defects for quantum information.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Spin excitations and flat electronic bands in a Cr-based kagome superconductor

In the quest for topology- and correlation-driven quantum states, kagome lattice materials have garnered significant interest for their band structures, featuring flat bands (FBs) from the quantum destructive interference of the electronic wavefunction. Tuning an FB to the chemical potential could induce electronic instabilities and emergent orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their role in emergent orders in bulk materials remains lacking. Using angle-resolved photoemission spectroscopy, resonant inelastic X-ray scattering, and density functional theory, we show that the low-energy structure of the Cr-based kagome metal superconductor CsCr 3 Sb 5 is dominated by FBs at the Fermi level. We also observe low-energy magnetic excitations evolving across the low-temperature transition, largely consistent with the FB shift. Our results suggest that the low-temperature order contains a magnetic origin and that the kagome FBs may play a role in the emergence of this order.

electronic properties and materials↗