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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗
NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗
NASA NTRS1998

Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

Ritter, Timothy M.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗
NASA NTRS1979

Present status of GaAs

An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period. The leading research and development centers and the specific areas of interest were identified. A workshop on GaAs was held in November 1977 to assess the present status of melt-grown GaAs and the existing needs for reliable chemical, structural, and electronic characterization methods. It was concluded that the present available bulk GaAs crystals are of poor quality and that GaAs technology is lagging demonstrated or potentially feasible GaAs devices and systems.

Gatos, H. C.↗
NASA NTRS2009

Liquid crystal devices especially for use in liquid crystal point diffraction interferometer systems

Liquid crystal point diffraction interferometer (LCPDI) systems that can provide real-time, phase-shifting interferograms that are useful in the characterization of static optical properties (wavefront aberrations, lensing, or wedge) in optical elements or dynamic, time-resolved events (temperature fluctuations and gradients, motion) in physical systems use improved LCPDI cells that employ a "structured" substrate or substrates in which the structural features are produced by thin film deposition or photo resist processing to provide a diffractive element that is an integral part of the cell substrate(s). The LC material used in the device may be doped with a "contrast-compensated" mixture of positive and negative dichroic dyes.

Marshall, Kenneth L.↗
NASA NTRSDate not supplied

Spacecraft Material Characterization Using Reflectance Spectra Extracted from RGB/IR Color Images

The space environment is detrimental to the exterior of the spacecraft and imposes stringent requirements on spacecraft materials. Space materials are often expected to perform for 15-20 years in the harsh space environment without significant degradation of their optical, electrical, mechanical and thermal properties. Further, as commercial activities increase in the space domain, development of predictive capability for material evolution is critical for agile adaption of novel materials. Therefore, it is very important to understand the effects of the space environments on the spacecraft materials. The Materials on the International Space Station Experiment Flight Facility (MISSE-FF) has flown numerous material samples to investigate the effect of LEO space weather exposure on the performance and durability of materials and devices. We are manifest on the MISSE-16 mission, scheduled to launch in June 2022, to fly fifteen novel and well-characterized materials in the LEO environment for a duration of six months. Changes in spectral reflectivity will be measured in real time throughout the mission with an RGB/IR camera. These time-resolved data will function as a "space-truth" reference for our team's ongoing laboratory-based space weather-material interaction experiments. Correlation of the MISSE-16 data with extensive ground testing of duplicate samples under simulated space weather conditions will enable development of fundamental chemical models for material degradation. This paper discusses preliminary results from the ground test campaign to collect the RGB/IR images for pristine and damaged materials and the development of machine learning algorithms to extract reflectance spectra from the color images.

Jainisha R. Shah↗
NASA NTRSDate not supplied

Spacecraft Material Characterization Using Reflectance Spectra Extracted from RGB/IR Color Images

The space environment is detrimental to the exterior of the spacecraft and imposes stringent requirements on spacecraft materials. Space materials are often expected to perform for 15-20 years in the harsh space environment without significant degradation of their optical, electrical, mechanical and thermal properties. Further, as commercial activities increase in the space domain, development of predictive capability for material evolution is critical for agile adaption of novel materials. Therefore, it is very important to understand the effects of the space environments on the spacecraft materials. The Materials on the International Space Station Experiment Flight Facility (MISSE-FF) has flown numerous material samples to investigate the effect of LEO space weather exposure on the performance and durability of materials and devices. We are manifest on the MISSE-16 mission, scheduled to launch in June 2022, to fly fifteen novel and well-characterized materials in the LEO environment for a duration of six months. Changes in spectral reflectivity will be measured in real time throughout the mission with an RGB/IR camera. These time-resolved data will function as a "space-truth" reference for our team's ongoing laboratory-based space weather-material interaction experiments. Correlation of the MISSE-16 data with extensive ground testing of duplicate samples under simulated space weather conditions will enable development of fundamental chemical models for material degradation. This paper discusses preliminary results from the ground test campaign to collect the RGB/IR images for pristine and damaged materials and the development of machine learning algorithms to extract reflectance spectra from the color images.

Jainisha R. Shah↗
NASA NTRS1994

Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗
NASA NTRS1991

Damping characterization in large structures

This research project has as its main goal the development of methods for selecting the damping characteristics of components of a large structure or multibody system, in such a way as to produce some desired system damping characteristics. The main need for such an analytical device is in the simulation of the dynamics of multibody systems consisting, at least partially, of flexible components. The reason for this need is that all existing simulation codes for multibody systems require component-by-component characterization of complex systems, whereas requirements (including damping) often appear at the overall system level. The main goal was met in large part by the development of a method that will in fact synthesize component damping matrices from a given system damping matrix. The restrictions to the method are that the desired system damping matrix must be diagonal (which is almost always the case) and that interbody connections must be by simple hinges. In addition to the technical outcome, this project contributed positively to the educational and research infrastructure of Tuskegee University - a Historically Black Institution.

Eke, Fidelis O.↗
NASA NTRS1984

Magneto-optic garnet and liquid crystal optical switches

Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.

Krawczak, J. A.↗
NASA NTRS2005

Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

McKeever, S. W. S.↗
NASA NTRS2012

Wideband Single-Crystal Transducer for Bone Characterization

The microgravity conditions of space travel result in unique physiological demands on the human body. In particular, the absence of the continual mechanical stresses on the skeletal system that are present on Earth cause the bones to decalcify. Trabecular structure decreases in thickness and increases in spacing, resulting in decreased bone strength and increased risk of injury. Thus, monitoring bone health is a high priority for long-term space travel. A single probe covering all frequency bands of interest would be ideal for such measurements, and this would also minimize storage space and eliminate the complexity of integrating multiple probes. This invention is an ultrasound transducer for the structural characterization of bone. Such characterization measures features of reflected and transmitted ultrasound signals, and correlates these signals with bone structure metrics such as bone mineral density, trabecular spacing, and thickness, etc. The techniques used to determine these various metrics require measurements over a broad range of ultrasound frequencies, and therefore, complete characterization requires the use of several narrowband transducers. This is a single transducer capable of making these measurements in all the required frequency bands. The device achieves this capability through a unique combination of a broadband piezoelectric material; a design incorporating multiple resonator sizes with distinct, overlapping frequency spectra; and a micromachining process for producing the multiple-resonator pattern with common electrode surfaces between the resonators. This device consists of a pattern of resonator bars with common electrodes that is wrapped around a central mandrel such that the radiating faces of the resonators are coplanar and can be simultaneously applied to the sample to be measured. The device operates as both a source and receiver of acoustic energy. It is operated by connection to an electronic system capable of both providing an excitation signal to the transducer and amplifying the signal received from the transducer. The excitation signal may be either a wide-bandwidth signal to excite the transducer across its entire operational spectrum, or a narrow-bandwidth signal optimized for a particular measurement technique. The transducer face is applied to the skin covering the bone to be characterized, and may be operated in through-transmission mode using two transducers, or in pulse-echo mode. The transducer is a unique combination of material, design, and fabrication technique. It is based on single-crystal lead magnesium niobate lead titanate (PMN-PT) piezoelectric material. As compared to the commonly used piezoceramics, this piezocrystal has superior piezoelectric and elastic properties, which results in devices with superior bandwidth, source level, and power requirements. This design necessitates a single resonant frequency. However, by operating in a transverse length-extensional mode, with the electric field applied orthogonally to the extensional direction, resonators of different sizes can share common electrodes, resulting in a multiply-resonant structure. With carefully sized resonators, and the superior bandwidth of piezocrystal, the resonances can be made to overlap to form a smooth, wide-bandwidth characteristic.

Liang, Yu↗
NASA NTRS2007

Interband cascade detectors

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Chuang, Shun Lien↗
NASA NTRS1979

Electrical Characterization of Hughes HCMP 1852D and RCA CDP1852D 8-bit, CMOS, I/O Ports

Twenty-five Hughes HCMP 1852D and 25 RCA CDP1852D 8-bit, CMOS, I/O port microcircuits underwent electrical characterization tests. All electrical measurements were performed on a Tektronix S-3260 Test System. Before electrical testing, the devices were subjected to a 168-hour burn-in at 125 C with the inputs biased at 10V. Four of the Hughes parts became inoperable during testing. They exhibited functional failures and out-of-range parametric measurements after a few runs of the test program.

Stokes, R. L.↗
NASA NTRS1981

Anisotropic magnetohydrodynamic turbulence in a strong external magnetic field

A strong external dc magnetic field introduces a basic anisotropy into incompressible magnetohydrodynamic turbulence. The modifications that this is likely to produce in the properties of the turbulence are explored for the high Reynolds number case. The conclusion is reached that the turbulent spectrum splits into two parts: an essentially two dimensional spectrum with both the velocity field and magnetic fluctuations perpendicular to the dc magnetic field, and a generally weaker and more nearly isotropic spectrum of Alfven waves. A minimal characterization of the spectral density tensors is given. Similarities to measurements from the Culham-Harwell Zeta pinch device and the UCLA Macrotor Tokamak are remarked upon, as are certain implications for the Belcher and Davis measurements of magnetohydrodynamic turbulence in the solar wind.

Montgomery, D.↗
NASA NTRS1987

Hollow cathode-based plasma contactor experiments for electrodynamic tether

The role plasma contactors play in effective electrodynamic tether operation is discussed. Hollow cathodes and hollow cathode-based plasma sources have been identified as leading candidates for the electrodynamic tether plasma contactor. Present experimental efforts to evaluate the suitability of these devices as plasma contactors are reviewed. This research includes the definition of preliminary plasma contactor designs, and the characterization of their operation as electron collectors from a simulated space plasma. The discovery of an 'ignited mode' regime of high contactor efficiency and low impedance is discussed, as well as is the application of recent models of the plasma coupling process to contactor operation. Results indicate that ampere-level electron currents can be exchanged between hollow cathode-based plasma contactors and a dilute plasma in this regime. A discussion of design considerations for plasma contactors is given which includes expressions defining the total mass flow rate and power requirements of plasma contactors operating in both the cathodic and anodic regimes, and correlation of this to the tether current. Finally, future ground and spaceflight experiments are proposed to resolve critical issues of plasma contactor operation.

Patterson, Michael J.↗
NASA NTRS1987

Processes in construction of failure management expert systems from device design information

This paper analyzes the tasks and problem solving methods used by an engineer in constructing a failure management expert system from design information about the device to te diagnosed. An expert test engineer developed a trouble-shooting expert system based on device design information and experience with similar devices, rather than on specific expert knowledge gained from operating the device or troubleshooting its failures. The construction of the expert system was intensively observed and analyzed. This paper characterizes the knowledge, tasks, methods, and design decisions involved in constructing this type of expert system, and makes recommendations concerning tools for aiding and automating construction of such systems.

Malin, Jane T.↗