($\mathrm{INVITED}$)Counter-ion effect on the diffusion behavior of $\mathrm{Y}$b, $\mathrm{L}$u, and $\mathrm{N}$d ions in $\mathrm{YAG}$ transparent ceramics
The ability to fabricate additively manufactured laser waveguides with sharp dopant concentration interfaces is limited by diffusion of the dopants at the temperatures required to fully densify the material. Compositional analysis of bilayer samples, where each layer was either undoped YAG or YAG doped with Yb, Lu, or Nd, were fabricated such that all combinations were available for testing. Samples were fabricated at both 1750°C and 1850°C to determine the diffusion behavior of each dopant alone and also in the presence of a second dopant. It was found that the experimental concentration profiles exhibited both intragranular (bulk) and grain boundary contributions, and thus fitting to a complementary error function equation required the use of two diffusion coefficients. Nd always diffused further along grain boundaries than the other dopants, due in part to its small segregation coefficient in YAG. It is shown that the presence of Nd as a counter dopant inhibits intragranular diffusion of other dopants while enhancing their grain boundary diffusion. All the observed trends were attributed to a combination of intragranular lattice strain due to: dopant ions replacing yttrium substitutionally, the relative driving forces for the segregation of dopant ions to grain boundaries, and the ability of one dopant to affect the diffusion of a different dopant in the other direction to maintain charge neutrality.