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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

High Voltage Test-Stand Research Done on ICRF Antenna Elements of the High-Harmonic Fast-Wave System of NSTX

The twelve-strap high-harmonic fast-wave (HHFW) antenna on NSTX has exhibited a high-voltage standoff around 25 kV during previous experimental campaigns; this standoff needs to be improved for increased power coupling. During the recent NSTX-U upgrade period, a test-stand was set up with two antenna straps along with Faraday screens for testing purposes. Using a diagnostic suite consisting of a fast camera, a residual gas analyzer, a pressure gage, high-voltage probes, and an infrared camera, several interesting discoveries were made, leading to possible improvements of the antenna RF voltage operation level. First, arcing was observed outside the Faraday shields towards the low-voltage ("grounded") end of the straps (faraday shield box ends); this arcing was successfully eliminated by installing an additional grounding point between the Faraday shield box and the vessel wall. Second, considerable outgassing was observed during the RF pulse and the amount of outgassing was found to decrease with increasing RF power, possibly indicative of multipacting. Finally, infrared camera measurements of heating on the Faraday shield assembly suggest that the return currents on the Faraday shield box are highly localized at the box sides and possibly account for the pressure increase observed. Computations of these RF currents using Microwave Studio show qualitative agreement with the heated regions. New grounding points between the antenna box and the vessel have been implemented in NSTX-U, where future tests will be done to determine if the high-voltage standoff has improved. Further antenna improvements will be sought through future experiments on the test stand.

Perkins, R. J.↗
DOE OSTI2015

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Influence of the voltage waveform during nanocomposite layer deposition by aerosol-assisted atmospheric pressure Townsend discharge

This work examines the growth dynamics of TiO{sub 2}-SiO{sub 2} nanocomposite coatings in plane-to-plane Dielectric Barrier Discharges (DBDs) at atmospheric pressure operated in a Townsend regime using nebulized TiO{sub 2} colloidal suspension in hexamethyldisiloxane as the growth precursors. For low-frequency (LF) sinusoidal voltages applied to the DBD cell, with voltage amplitudes lower than the one required for discharge breakdown, Scanning Electron Microscopy of silicon substrates placed on the bottom DBD electrode reveals significant deposition of TiO{sub 2} nanoparticles (NPs) close to the discharge entrance. On the other hand, at higher frequencies (HF), the number of TiO{sub 2} NPs deposited strongly decreases due to their “trapping” in the oscillating voltage and their transport along the gas flow lines. Based on these findings, a combined LF-HF voltage waveform is proposed and used to achieve significant and spatially uniform deposition of TiO{sub 2} NPs across the whole substrate surface. For higher voltage amplitudes, in the presence of hexamethyldisiloxane and nitrous oxide for plasma-enhanced chemical vapor deposition of inorganic layers, it is found that TiO{sub 2} NPs become fully embedded into a silica-like matrix. Similar Raman spectra are obtained for as-prepared TiO{sub 2} NPs and for nanocomposite TiO{sub 2}-SiO{sub 2} coating, suggesting that plasma exposure does not significantly alter the crystalline structure of the TiO{sub 2} NPs injected into the discharge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Active voltage contrast imaging of cross-sectional surface of multilayer ceramic capacitor using helium ion microscopy

We studied active voltage contrast (AVC) imaging using helium ion microscopy (HIM). We observed secondary electron (SE) images of the cross-sectional surface of multilayer ceramic capacitors (MLCCs) with and without a voltage applied to the internal electrodes. When no voltage was applied, we obtained an image reflecting the material contrast between the Ni internal electrode region and the BaTiO{sub 3} dielectric region of the cross-sectional surface of the MLCC. When a voltage was applied, the electrical potential difference between the grounded and the positively biased internal electrodes affected the contrast (voltage contrast). Moreover, attenuation of the SE intensity from the grounded to the positively biased internal electrodes was observed in the dielectric region. Kelvin probe force microscopy (KPFM) measurements of the contact potential difference (CPD) were performed on the same sample. By using the AVC image from the HIM observation and the CPD image from the KPFM measurement, we could quantitatively evaluate the electrical potential. We think that the results of this study will lead to an expansion in the number of applications of HIM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

250 kV 6 mA compact Cockcroft-Walton high-voltage power supply

A compact power supply system for a compact neutron generator has been developed. A 4-stage symmetrical Cockcroft-Walton circuit is adopted to produce 250 kV direct current high-voltage. A 2-stage 280 kV isolation transformer system is used to drive the ion source power supply. For a compact structure, safety, and reliability during the operation, the Cockcroft-Walton circuit and the isolation transformer system are enclosed in an epoxy vessel containing the transformer oil whose size is about ∅350 mm × 766 mm. Test results indicate that the maximum output voltage of the power supply is 282 kV, and the stability of the output voltage is better than 0.63% when the high voltage power supply is operated at 250 kV, 6.9 mA with the input voltage varying ±10%.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
DOE OSTI2023

Structural basis for severe pain caused by mutations in the S4-S5 linkers of voltage-gated sodium channel Na V 1.7

Gain-of-function mutations in voltage-gated sodium channel Na V 1.7 cause severe inherited pain syndromes, including inherited erythromelalgia (IEM). The structural basis of these disease mutations, however, remains elusive. Here, we focused on three mutations that all substitute threonine residues in the alpha-helical S4-S5 intracellular linker that connects the voltage sensor to the pore: Na V 1.7/I234T, Na V 1.7/I848T, and Na V 1.7/S241T in order of their positions in the amino acid sequence within the S4-S5 linkers. Introduction of these IEM mutations into the ancestral bacterial sodium channel Na V Ab recapitulated the pathogenic gain-of-function of these mutants by inducing a negative shift in the voltage dependence of activation and slowing the kinetics of inactivation. Remarkably, our structural analysis reveals a common mechanism of action among the three mutations, in which the mutant threonine residues create new hydrogen bonds between the S4-S5 linker and the pore-lining S5 or S6 segment in the pore module. Because the S4-S5 linkers couple voltage sensor movements to pore opening, these newly formed hydrogen bonds would stabilize the activated state substantially and thereby promote the 8 to 18 mV negative shift in the voltage dependence of activation that is characteristic of the Na V 1.7 IEM mutants. Our results provide key structural insights into how IEM mutations in the S4-S5 linkers may cause hyperexcitability of Na V 1.7 and lead to severe pain in this debilitating disease.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Feasible voltage-tap based quench detection in a Ag/Bi-2212 coil enabled by fast 3D normal zone propagation

For this study, small insert solenoids have been built using a commercial Ag/Bi-2212 multifilamentary round wire, insulated with a new thin TiO 2 – polymer coating insulation (thickness in ~20 μm versus ~100 μm for a commonly used mullite braided sleeve insulation), and characterized in background magnetic field up to 14 T at 4.2 K to explore the high-field performance and quench detection of Bi-2212 magnets. The coil has no visible leakage and no electrical shorts after reaction, and it carries 280 A/mm -2 in a background field 14 T and generates an additional 1.7 T. A notable result is that, despite normal zones propagate slowly along the conductor, the hot spot temperature upon detection increases only from 40 K to 60 K when the resistive quench detection voltage threshold increases from 0.1 V to 1 V for all operating current density investigated, showing that quench detection using voltage taps is feasible for this coil. This is in a strong contrast to a coil we previously built to the same specifications but from wires insulated with the mullite braided sleeve insulation, for which the hot spot temperature upon detection increases from ~80 K to ~140 K while increasing from the detection voltage threshold from 0.1 V to 1 V, and thus for which quench detection using voltage taps presents significant risks, consistent with the common belief that the effectiveness of quench detection using voltage taps for superconducting magnets built using high temperature superconductors is seriously compromised by their slow normal zone propagation. This striking difference is ascribed to the fast transverse quench propagation enabled by thin insulation and improved thermal coupling between conductor turns. Finally, this work demonstrates that quench detection for high-temperature superconducting magnets highly depends on the design and construction of the coils such as insulation materials used and this dependence should be factored into the overall magnet design.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Breakdown voltage of metal-oxide resistors in liquid argon

We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Medium Voltage Converter Inductor Insulation Design Considering Grid Insulation Requirements

Medium voltage SiC devices facilitate direct (without 50/60 Hz transformer) connection of the power electronics converter to the medium voltage grid using simple topology. Compared to the insulation design of medium voltage inductors that have been widely used in the power system, the insulation design of directly connected medium voltage converter filter inductors has more challenges. Although some works has been done discussing that, the grid insulation requirements on converter filter inductors are rarely discussed. This paper introduces the insulation design of a grid-side filter inductor for a 13.8 kV power conditioning system converter. The grid insulation requirements, including the short-duration power frequency overvoltage and the lightning impulse voltage, are considered in the design. To meet the requirements, the layer-to-layer insulation, winding-to-core/ground insulation, the air gap discharge between the winding and the core, as well as the local electrical field have been taken into consideration. Experimental tests are provided to validate the design.

Li, Haiguo↗
DOE OSTI2023

Medium Voltage Solid State Transformer for Extreme Fast Charging Applications

A modular and scalable solid state transformer (SST) with direct medium voltage (MV) AC connectivity is proposed to enable DC extreme fast charging (XFC) of electric vehicles. Single-phase-modules (SPMs), each consisting of an active-front-end (AFE) stage and an isolated DC-DC stage, are connected in input-series-output-parallel (ISOP) configuration. The modular hardware is co-designed with decentralized control of the DC-DC stages where voltage and power balancing are achieved by each SPM using only its local sensor feedback; a centralized controller (CC) regulates the low voltage (LV) DC bus through the AFE stages without any sensor feedback form the SPMs. The controller architecture contrasts sharply with the prior art for MV AC to LV DC SSTs where high-speed bidirectional communication among SPMs and a CC are required for module-level voltage and power balancing, which severely limits the scalability and practical realization of higher voltage and higher power units. Detailed small-signal analysis and controller design guidelines are developed. Furthermore, a soft start-up strategy is presented. The proposed converter and control structure are validated through simulation and experimental results.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

An Ultra-Fast Inrush-Current-Free Startup Method for Grid-tie Inverter without Voltage Sensors

This paper proposes an ultra-fast inrush-currentfree startup method for grid-tie inverters without voltage sensors and phase-locked loop (PLL). Traditionally, the grid-tie inverter needs the voltage measured from points of common couplings (PCC) to generate the phase angle via PLL for inverter pulsewidth- modulation (PWM) signals. The startup procedure is slow and inrush current occurs if the initial PWM does not match the unknown grid voltage well. This paper proposes a startup method that only uses measured inverter ac currents to generate the initial PWM by controlling the current to zero. The generated PWM pattern can be used to reproduce the real grid voltage regardless of the grid impedance. The zero-crossing points of the grid voltage are detected and then used for grid synchronization. The proposed startup procedure only needs a few cycles (16.67 ms/cycle) to reliably synchronize the inverter to the grid without any inrush current. Simulation and experimental results are presented to verify the effectiveness of this control strategy.

He, Yuchen↗
DOE OSTI2020

Dynamic Model of Active Front-End Converters with 2DOF-PI Controllers for DC Bus Voltage Control

In most of the research, a conventional one degree-of-freedom type proportional-integral controller (1DOF-PI) is used for the regulation of the dc bus voltage in an Active Front-End Converter (AFEC). This paper proposes a two degree-of-freedom type proportional-integral controller (2DOF-PI) for the regulation of dc bus voltage in an AFEC. Such a controller eliminates the left-half plane (LHP) zero in the command-to-output transfer function for dc bus voltage regulation that is inherent to the conventional 1DOF-PI for this application. The dynamic model of an AFEC in the synchronous reference frame (SRF) is presented. An inner current control and outer dc voltage control loop is built for controlling the AFEC. Vector-control scheme is employed to achieve decoupled control of direct-axis and quadrature-axis currents. The outer dc voltage control loop is designed with a 2DOF-PI to complete the control system. Transfer function (TF) of the controller is derived based on the presented model and used to calculate the controller gains. Transient and steady state performance of the designed controllers are investigated in MATLAB/Simulink and results presented.

Thapa, Anup↗
DOE OSTI2014

High voltage performance of BARC-TIFR Pelletron Accelerator

The 14 UD Pelletron Accelerator at TIFR, Mumbai is operational since its inception in 1988. It was decided to impart enough time for high voltage conditioning to achieve higher operational voltage. Prior to this, comprehensive works such as replacing all the sputter ion pumps and Titanium sublimation pumps across the accelerator tube with new or refurbished ones and replacement of Alumina balls in the SF{sub 6} drier with fresh balls were carried out. High voltage conditioning of each module was done. Further conditioning of two modules at a time in overlapping mode improved the terminal voltage. As a result of this rigorous conditioning Terminal voltage of 12.6 MV was achieved and beam has been delivered to users at 12 MV terminal. Details of this effort will be presented in this paper. (author)

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗
DOE OSTI2023

Grid-Tied PV Inverter with Oversized Power Module to Increase its Low-Voltage Ride Through (LVRT) Capabilities and VAR Support

This paper proposes a novel design for grid-tied 3-ph Photovoltaic (PV) inverter to improve its low-voltage ride through (LVRT) response while significantly increasing its voltampere reactive (VAR) support during voltage sags. The literature available on LVRT for PV inverters can be grouped in solutions that dissipate the excess energy and those that temporary stores this energy. This paper proposes a third solution; oversizing inverter hardware components to safely transferring all the energy excess back to while maintaining the semiconductor under the maximum temperature limits. The advantages of the proposed approach are: 1) Improved LVRT capabilities and stable dc-link voltage control at MPP during sags. 2) Increased VAR support during voltage sags. 3) Increased use of renewable energy as all active power is injected back to the grid during voltage sags. Finally, the proposed solution is more cost effective compared with solutions that incorporate energy storage because only a few inverter components are required to be oversized. This paper also presents a detailed power loss analysis, which determined that that oversizing the power semiconductors has minimal impact in the inverter losses while significatively reducing the diode and IGBT conduction losses during both normal operation and grid fault conditions.

Ferrari Maglia, Max↗
DOE OSTI2020

Model-Free Dynamic Voltage Control of a Synchronous Generator-Based Microgrid

The main goal of this paper is to present a new dynamic voltage stability mechanism, based on model-free control (MFC), for effective control and coordination of synchronous generator (SG)-based reactive power resources in a microgrid setting. MFC has shown successful operation in various domains, and this paper presents its first use in the voltage stability of a power system. It is utilized as an online controller to achieve the dynamic voltage stability of a microgrid system under different disturbances and fault conditions. A 21-bus microgrid system fed by SG-based distributed energy resources (DERs) is considered as a use case study. The overall dynamic voltage stability of the microgrid system is investigated using time-domain dynamic simulations during emergency, hazard, and disaster events. Simulation results show that there are significant improvements and enhancements on the dynamic load bus voltage profiles of the microgrid system by the effective model-free control and coordination of the reactive power reserves of the SG-based DERs.

Hatipoglu, Kenan↗
DOE OSTI2021

Impact Analysis of Data Integrity Attacks on FACTS-based Wide-Area Voltage Control System

Energy management system (EMS) consists of several wide-area control applications that serve as a backbone for security, stability, and reliability of the power system. Wide-area voltage control system (WAVCS), one of the critical wide-area applications, operates in coordination with local Flexible AC Transmission System (FACTS) devices to provide voltage security and optimal management of active and reactive power resources. Since the WAVCS relies on wide-area communication and data sharing devices, possible cybersecurity vulnerabilities have to be addressed to ensure the closed-loop operation of WAVCS. In this paper, we present a methodology for performing an impact analysis of cyber-attacks in WAVCS cybersecurity. In particular, different types of data integrity attacks, such as malicious tripping, fault replay, and signal altering attacks, are considered, and detailed impact analysis is conducted in a testbed environment using the Kundur's four machine two-area system. For performing an impact analysis, the transient voltage stability of the sensitive bus voltage is studied, followed by the quantitative assessment and severity ranking using the voltage profile index. Our experimental evaluation reveals that the data integrity attacks on control signals exhibit a higher attack severity than on the measurement signals. Further, the severity of these attacks varies with nature (static or dynamic), location, and types of attacks.

24 POWER TRANSMISSION AND DISTRIBUTION↗