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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Trap states in AlGaN channel high-electron-mobility transistors

Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 10{sup 13} cm{sup −2}eV{sup −1} at the energy of 0.33 eV to 4.35 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2013

Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors

We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532 nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

High-quality Si nanowire field effect transistors (FETs) were fabricated using thermal nanoimprint and chemical wet etching technologies. FET structures of different lengths demonstrate high carrier mobility with values of about 750 cm{sup 2}/Vs and low volume densities of active traps in the dielectric layers of 5 × 10{sup 17} cm{sup −3} eV{sup −1}. We investigated the transport properties of these n-type channel structures using low-frequency noise spectroscopy before and after gamma radiation treatment. Before gamma irradiation, FET structures with lengths of less than 4 μm exhibited noise from contact regions with 1/(L{sup 2}) dependence for the relative 1/f noise. After gamma radiation, the spectra reflected the priority of channel noise with 1/L dependence for all samples. The transport characteristics show that the fabricated nanowire FETs improved scalability, decreased parameter scattering, and increased stability after treatment. The results demonstrate that these nanowire FETs are promising for nanoelectronic and biosensor applications due to the cost-efficient technology and advanced performance of FETs with improved stability and reliability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate

We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-κ HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130 °C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91 V, electron mobility of 3.9 cm{sup 2} V{sup −1} s{sup −1}, and low subthreshold swing of 192 mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20 V) with low output conductances.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm{sup 2}/V s and ∼1.00 cm{sup 2}/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 μm) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer

In this work, we have studied the effect of surface treatment of SiO{sub 2} dielectric layer on the reduction of the trap charge carrier density at dielectric/semiconducting interface by fabricating a metal–insulator–semiconductor (MIS) device using α, ω-dihexylcarbonylquaterthiophene as semiconducting layer. SiO{sub 2} dielectric layer has been treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to modify the chemical group acting as charge traps. Capacitance-voltage measurements have been performed on MIS devices fabricated on SiO{sub 2} and HMDS treated SiO{sub 2}. These data have been used for the calculation of trap charge carrier density and Debye length at the dielectric-semiconductor interface. The calculated trap charge carrier density has been found to reduce from (2.925 ± 0.049) × 10{sup 16} cm{sup −3} to (2.025 ± 0.061) × 10{sup 16} cm{sup −3} for the MIS device with HMDS treated SiO{sub 2} dielectric in comparison to that of untreated SiO{sub 2}. Next, the effect of reduction in trap charge carrier density has been studied on the performance of organic field effect transistors. The improvement in the device parameters like mobility, on/off ratio, and gate leakage current has been obtained with the effect of the surface treatment. The charge carrier mobility has been improved by a factor of 2 through this treatment. Further, the influence of the treatment was observed by atomic force microscope and Fourier transform infrared spectroscopy techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Chemical composition and temperature dependent performance of ZnO-thin film transistors deposited by pulsed and continuous spray pyrolysis

Zinc oxide thin film transistors (TFTs) deposited by continuous and pulsed spray pyrolysis were investigated to analyze process kinetics which make reduction of process temperature possible. Thus, fluid mechanics, chemical composition, electrical performance, and deposition and annealing temperature were systematically analyzed. It was found that ZnO layers continuously deposited at 360 °C contained zinc oxynitrides, CO{sub 3}, and hydro carbonate groups from pyrolysis of basic zinc acetate. Statistically, every second wurtzite ZnO unit cell contained an impurity atom. The purity and performance of the ZnO-TFTs increased systematically with increasing deposition temperature due to an improved oxidation processes. At 500 °C the zinc to oxygen ratio exceeded a high value of 0.96. Additionally, the ZnO film was not found to be in a stabilized state after deposition even at high temperatures. Introducing additional subsequent annealing steps stabilizes the film and allows the reduction of the overall thermal stress to the substrate. Further improvement of device characteristics was obtained by pulsed deposition which allowed a more effective transport of the by-products and oxygen. A significant reduction of the deposition temperature by 140 °C was achieved compared to the same performance as in continuous deposition mode. The trap density close to the Fermi energy could be reduced by a factor of two to 4 × 10{sup 17} eV{sup −1} cm{sup −3} due to the optimized combustion process on the surface. The optimization of the deposition processes made the fabrication of TFTs with excellent performance possible. The mobility was high and exceeded 12 cm{sup 2}/V s, the subthreshold slope was 0.3 V dec{sup −1}, and an on-set close to the ideal value of 0 V was achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped charges on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors

Self-consistent calculations for solving the Poisson and Schrödinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Bottom-up graphene nanoribbon field-effect transistors

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Characterization of interface states in Al{sub 2}O{sub 3}/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

We have investigated the relationship between improved electrical properties of Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al{sub 2}O{sub 3}/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al{sub 2}O{sub 3}/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N{sub 2}O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al{sub 2}O{sub 3} insulator. As compared to the sample without the treatment, the N{sub 2}O-radical treated Al{sub 2}O{sub 3}/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al{sub 2}O{sub 3}/AlGaN interface were estimated to be 1 × 10{sup 12} cm{sup −2} eV{sup −1} or less around the midgap and 8 × 10{sup 12} cm{sup −2} eV{sup −1} near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 °C. Results presented in this paper indicated that the N{sub 2}O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al{sub 2}O{sub 3}/AlGaN/GaN MOS-HEMTs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗