Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Te”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Nematic transition and nanoscale suppression of superconductivity in Fe(Te,Se)

The interplay of different electronic phases underlies the physics of unconventional superconductors. One of the most intriguing examples is a high-temperature superconductor, FeTe 1 – x Se x . This superconductor undergoes both a topological transition, linked to the electronic band inversion, and an electronic nematic phase transition, associated with rotation symmetry breaking, around the same Se composition where the superconducting transition temperature peaks. In this regime, nematic fluctuations and symmetry-breaking strain could be important, but this is yet to be fully explored. Using spectroscopic-imaging scanning tunnelling microscopy, we study the electronic nematic transition in FeTe 1 – x Se x as a function of composition. Near the critical Se composition, we find electronic nematicity in nanoscale regions. The superconducting coherence peaks are suppressed in areas where static nematic order is the strongest. By analysing atomic displacement in scanning tunnelling microscopy topographs, we find that small anisotropic strain can give rise to these strongly nematic localized regions. Furthermore, our experiments reveal a tendency of FeTe 1 – x Se x , near x ≈ 0.45, to form puddles hosting static nematic order, suggestive of nematic fluctuations pinned by structural inhomogeneity, and demonstrate the effect of anisotropic strain on superconductivity in this regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Direct observation of the superallowed α-decay of 104 Te

The radioactivity of the α particle is among the most compelling evidence for the existence of cluster structures in atomic nuclei. During the decay process, a pre-existing α particle tunnels through the potential barrier formed by the residual nucleus1,2. The degree of preformation of the α particle, a strongly bound system of two protons and two neutrons, is extracted from the data by dividing the α-decay probability by the barrier penetrability for a given particle energy. The preformation probability changes rapidly near nuclear shell closures, which is direct evidence that clustering is connected to nuclear structure3. Enhanced preformation was observed in the lightest α-particle emitters, spherical tellurium and xenon isotopes decaying to magic isotopes of tin. Here we show the most extreme case of α-particle preformation from the measurement of the decay of tellurium-104 (104Te). With a half-life of , 104Te is the fastest ground-state α-emitting nucleus known so far. The deduced preformation demonstrates that the enhancement is greater for 104Te than for any other nucleus. One nuclear model that can explain our observation postulates that the α particle can exist only in the low-nuclear-matter-density regions on the surface of the nucleus. The uniquely high preformation for 104Te is attributed to its relation to doubly magic tin-100 (100Sn), creating conditions conducive to form an α particle.

Cox, Ian↗
DOE OSTI2023

Observation of momentum-dependent charge density wave gap in a layered antiferromagnet ${\textrm{Gd}}{\textrm{Te}}_{3}$

Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe 3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe 3 , which is antiferromagnetic below ~ 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along $\overline{Γ}$ - $\overline{Z}$ and gradually decreases going towards $\overline{Γ}$ - $\overline{Z}$. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three dimensions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Resolving local ordering and structure in Mn x Ge 1- x Te alloys through thermodynamic ensembles of pair distribution functions

Characterizing local bonding environments in complex materials is essential for understanding and optimizing their properties. Equally as important is the ability to predict local motifs as a function of synthesis conditions, enhancing chemists’ ability to design properties into materials. In this study, we present an approach to leverage statistical mechanics to generate temperature- and energy-informed ensemble averaged pair distribution functions (PDFs). This method, which we have named Thermodynamic Ensemble Averages of PDFs for Ordering and Transformations (TEAPOT), utilizes density functional theory (DFT) to relax supercells while incorporating energetic penalties for local order, enabling accurate and computationally efficient analysis of local structure. We apply this method to the neutron PDF measurements of the pseudobinary MnTe–GeTe (MGT) alloy, demonstrating its capability to resolve complex local distortions and chemical ordering. Our results reveal detailed insights into phase transformations and local distortions driven by Mn substitution. For compositions that globally present as rock salt, our analysis reveals that Ge coordination geometry is heavily impacted by synthesis temperature. We propose that high temperature synthesis conditions promote a lowered Ge polyhedra distortion, promoting high charge carrier mobility due to the alignment of local and global structure. Incorporating statistical mechanics and computation into experimental analysis thus guides synthesis of tailored local structure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mechanisms for long carrier lifetime in Cd(Se)Te double heterostructures

II–VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 µs, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 µs correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge 2 Sb 2 Se 5 x Te 5-5 x with Se doping

Random access memories utilize fast, reversible switching between ordered and disordered states of matter in phase change materials (PCMs) such as Ge2Sb2Te5-5x. The short-range structure in the disordered phase has been described either as (i) a network of Ge tetrahedra or (ii) Peierls distorted Ge/Sb octahedra. The PCM transition was investigated in bulk Ge2Sb2Se5xTe5-5x (GSST), in which amorphization sets in with Se doping (x ≈ 0.85) upon quenching. GSST has a hexagonal crystalline ground state with Ge/Sb octahedral coordination, but the phase change transition to the amorphous state that is only observed when the system is quenched brings a short-range structure with sharp, tetrahedrally coordinated Ge/Sb correlations and shortened bonds that are distinctly different from the expected octahedral pairing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

In situ investigation of ion irradiation-induced amorphization of (Ge 2 Sb 2 Te 5 ) 1−x C x [0 ≤ x ≤ 0.12]

Chalcogenide thin films that undergo reversible phase changes show promise for use in next-generation nanophotonics, microelectronics, and other emerging technologies. One of the many studied compounds, Ge2Sb2Te5, has demonstrated several useful properties and performance characteristics. However, the efficacy of benchmark Ge2Sb2Te5 is restricted by amorphous phase thermal stability below ∼150 °C, limiting its potential use in high-temperature applications. In response, previous studies have added a fourth species (e.g., C) to sputter-deposited Ge2Sb2Te5, demonstrating improved thermal stability. Our current research confirms reported thermal stability enhancements and assesses the effects of carbon on crystalline phase radiation response. Through in situ transmission electron microscope irradiation studies, we examine the effect of C addition on the amorphization behavior of initially cubic and trigonal polycrystalline films irradiated using 2.8 MeV Au to various doses up to 1 × 1015 cm −2 . It was found that increased C content reduces radiation tolerance of both cubic and trigonal phases.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Low-damage electron beam lithography for nanostructures on Bi 2 Te 3 -class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi 2 Se 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. In conclusion, although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

42 ENGINEERING↗
DOE OSTI2023

Validation of 2D Te and ne measurements made with Helium imaging spectroscopy in the volume of the TCV divertor

Abstract Multi-spectral imaging of helium atomic emission (HeMSI) has been used to create 2D poloidal maps of T e and n e in TCV’s divertor. To achieve these measurements, TCV’s MANTIS multispectral cameras (Perek et al 2019 Rev. Sci. Instrum. 90 123514) simultaneously imaged four He I lines (two singlet and two triplet) and a He II line (468 nm) from passively present He and He + . The images, which were absolutely calibrated and covered the whole divertor region, were inverted through the assumption of toroidal symmetry to create emissivity profiles and, consequently, line-ratio profiles. A collisional-radiative model (CRM) was applied to the line-ratio profiles to produce 2D poloidal maps of T e and n e . The collisional-radiative modeling was accomplished with the Goto helium CRM code (Zholobenko et al 2018 Nucl. Fusion 58 126006, Zholobenko et al 2018 Technical Report , Goto 2003 J. Quant. Spectrosc. Radiat. Transfer 76 331–44) which accounts for electron-impact excitation (EIE) and deexcitation, and electron–ion recombination (EIR) with He + . The HeMSI T e and n e measurements were compared with co-local Thomson scattering measurements. The two sets of measurements exhibited good agreement for ionizing plasmas: ( 5 eV ⩽ T e ⩽ 60 eV , and 2 × 10 18 m − 3 ⩽ n e ⩽ 3 × 10 19 m − 3 ) in the case of majority helium plasmas, and ( 10 eV ⩽ T e ⩽ 40 eV , 2 × 10 18 m − 3 ⩽ n e ⩽ 3 × 10 19 m − 3 ) in the case of majority deuterium plasmas. However, there were instances where HeMSI measurements diverged from Thomson scattering. When T e ⩽ 10 eV in majority deuterium plasmas, HeMSI deduced inaccurately high values of T e . This disagreement cannot be rectified within the CRM’s EIE and EIR framework. Second, on sporadic occasions within the private flux region, HeMSI produced erroneously high measurements of n e . Multi-spectral imaging of Helium emission has been demonstrated to produce accurate 2D poloidal maps of T e and n e within the divertor of a tokamak for plasma conditions relevant to contemporary divertor studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Explaining the extra crystal-field mode in 𝐴 ⁢Ce ⁢𝑋 2 (𝐴 = K, Rb, Na; 𝑋 = O, S, Se, Te)

A growing list of Ce-based magnets have shown an extra and heretofore unexplained crystal electric field (CEF) mode at high energies. We describe a process whereby an optical phonon can produce a split CEF mode well above the phonon energy. We use density functional theory and point-charge model calculations to estimate the phonon distortions and coupling to model this effect in KCeO 2 , showing that it accounts for the extra CEF mode observed. Furthermore, this mechanism is generic and may explain the extra modes observed on a variety of Ce 3+ compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Charge Transport and Space-Charge Formation in Cd 1 - x Zn x Te 1 - y Se y Radiation Detectors

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson’s equation. Electron and hole drift mobilities of μe = 830 cm 2 /Vs and μh = 40 cm 2 /Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of (μτ)e = 1.9 × 10 -3 cm 2 /V and (μτ)h = 1.4 × 10 -4 cm 2 /V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of E t =E C -0.73eV; concentration of 7.3 × 10 11 cm -3 ; and electron- and hole-capture cross sections of 3.5 × 10 -14 cm 2 and 6.5 × 10 -14 cm 2 , respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Anomalous thermal effect in Zr Te 5 observed via photothermal measurements

In this study, we explore the magneto-thermoelectric power (MTP) of $ZrTe$ 5 , a canonical Dirac semimetal, through a novel photothermal technique. Unlike conventional thermoelectric studies that rely on on-chip heaters and are limited by fabrication processes, especially for stress-sensitive materials, our approach utilizes photothermal effects to induce temperature gradients. Our experiments, applying a magnetic field approximately parallel and transverse to the photocurrent detection direction, reveal that the photothermal method efficiently and reliably extracts both diagonal and off-diagonal components of the thermoelectric coefficient of $ZrTe$ 5 . Here, we observe that the longitudinal MTP reproduces features previously reported in thermal transport studies, while the photoinduced transverse MTP confirms the anomalous Nernst effect. This photothermal measurement technique opens new avenues for investigating transport properties in a wide range of quantum materials, both in 3D and 2D systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Crossover between weak antilocalization and weak localization in few-layer W Te 2 : Role of electron-electron interactions

We report electron transport studies in an encapsulated few-layer WTe 2 at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization and weak localization in the quantum diffusive regime. Here we show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low-temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existence and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin Hall state in WTe 2 at the monolayer limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗