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At least 541 records · Page 30

Holographic thin film analyzer

A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

Williams, J. R.↗

Determining the refractive index and thickness of thin films from prism coupler measurements

A simple method of determining thin film parameters from mode indices measured using a prism coupler is described. The problem is reduced to doing two least squares straight line fits through measured mode indices vs effective mode number. The slope and y intercept of the line are simply related to the thickness and refractive index of film, respectively. The approach takes into account the correlation between as well as the uncertainty in the individual measurements from all sources of error to give precise error tolerances on the best fit values. Due to the precision of the tolerances, anisotropic films can be identified and characterized.

Kirsch, S. T.↗

Computer simulation of thin film nucleation and growth

Some of the processes involved in thin film nucleation and growth were simulated by means of a digital computer. The main conclusions drawn from the simulation results are (1) Because of the random nature of the processes involved, a large variation in results is obtained. (2) Upon impingement, clusters are formed up to a coverage of ca. 0.2, and from there on growth of existing clusters, rather than formation of new ones, takes place. (3) Surface migration is responsible for the formation of most of the clusters at coverages smaller than 0.1, whereas at higher coverages most clusters are formed upon impingement. (4) Surface migration accelerates the growth and causes reduction in cluster density. (5) Reevaporation slows the growth and reduces the cluster density dramatically.

Salik, J.↗

Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

Mei, YU↗

Preliminary investigation of thin film polymers exposed to low Earth orbit

Preliminary results of thin film polymers exposed to low-Earth orbit aboard the Long Duration Exposure Facility (LDEF) are discussed. Dynamic testing of a 0.92/0.92 mil. polyester laminate film indicated that the modulus loss of the exposed specimens may be very small. When the storage modulus of the exposed specimen was compared to the storage modulus of a control specimen over a temperature range of minus 150 degrees to 100 degrees, there was very little change. Fourier Transform Spectroscopy performed on the same exposed material indicated crosslinking of the polyethylene, which was verified by an increase in the storage modulus above the glass transition temperature. Optical microscopy of the sample showed micrometeoroid strikes and contamination in spots by what is thought to be silicon outgassed from a nearby experiment.

Strganac, Thomas↗

A Novel K-Band Tunable Microstrip Bandpass Filter Using a Thin Film HTS/Ferroelectric/ Dielectric Configuration

We report on YBCO/strontium titanate (STO) thin film K-band tunable bandpass filters on lanthanum aluminate substrates. The 2 pole filters were designed for a center frequency of 19 GHz and 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO (epsilon-rSTO). Center frequency shifts greater than 2 GHz were obtained at a 400V bipolar dc bias at temperatures below 77K, with minimum degradation in the insertion loss of the filters.

Subramanyam, G.↗