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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Unconventional Pressure-Driven Metamagnetic Transitions in Topological van der Waals Magnets

Activating metamagnetic transitions between ordered states in van der Waals magnets and devices bring great opportunities in spintronics. Here we show that external pressure, which enhances the inter-layer hopping without introducing chemical disorders, triggers multiple metamagnetic transitions upon cooling in the topological van der Waals magnets Mn(Bi 1–x Sb x ) 4 Te 7 , where the antiferro magnetic interlayer superexchange coupling competes with the ferromagnetic interlayer coupling mediated by the antisite Mn spins. The temperature-pressure phase diagrams reveal that while the ordering temperature from the paramagnetic to ordered states is almost pressure-independent, the metamagnetic transitions show non-trivial pressure and temperature dependence, even re-entrance. For these highly anisotropic magnets, we attribute the former to the ordering temperature being only weakly dependent on the intralayer parameters, the latter to the parametrically different pressure and temperature dependence of the two interlayer couplings. Our independent probing of these disparate magnetic interactions paves an avenue for efficient magnetic manipulations in van der Waals magnets.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Universal Magnetic Phases in Twisted Bilayer MoTe 2

Twisted bilayer MoTe 2 (tMoTe 2 ) has emerged as a robust platform for exploring correlated topological phases, yet the evolution of its magnetism and topology with twist angle remains an open question. Here, we systematically map the magnetic phase diagram of tMoTe 2 by using local optical spectroscopy and scanning nanoSQUID-on-tip magnetometry. We identify spontaneous ferromagnetism at filling factors ν = −1 and −3 across twist angles from 2.1° to 3.7°, revealing a universal, twist-angle-insensitive ferromagnetic phase. At 2.1°, we further observe robust ferromagnetism at ν = −5, absent at larger twist angles. Temperature-dependent measurements reveal a contrasting twist-angle dependence of the Curie temperatures between ν = −1 and −3, indicating a distinct interplay between the exchange interactions and bandwidth for the two Chern bands. Despite broken time-reversal symmetry, no topological gap is detected at ν = −3. Furthermore, our results establish a global framework for understanding and controlling magnetic order in tMoTe 2 .

Insulators↗
DOE OSTI2022

Selective area epitaxy of GaAs films using patterned graphene on Ge

We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. GaAs selectively grows on exposed regions of the Ge substrate for graphene stripe widths of 10 μm. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several micrometers sets constraints on experimental realizations of remote epitaxy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Magnetizing lead-free halide double perovskites

Spintronics holds great potential for next-generation high-speed and low–power consumption information technology. Recently, lead halide perovskites (LHPs), which have gained great success in optoelectronics, also show interesting magnetic properties. However, the spin-related properties in LHPs originate from the spin-orbit coupling of Pb, limiting further development of these materials in spintronics. Here, we demonstrate a new generation of halide perovskites, by alloying magnetic elements into optoelectronic double perovskites, which provide rich chemical and structural diversities to host different magnetic elements. In our iron-alloyed double perovskite, Cs 2 Ag(Bi:Fe)Br 6 , Fe 3+ replaces Bi 3+ and forms FeBr 6 clusters that homogenously distribute throughout the double perovskite crystals. Furthermore, we observe a strong temperature-dependent magnetic response at temperatures below 30 K, which is tentatively attributed to a weak ferromagnetic or antiferromagnetic response from localized regions. We anticipate that this work will stimulate future efforts in exploring this simple yet efficient approach to develop new spintronic materials based on lead-free double perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Incubation temperature alters stripe formation and head colouration in American alligator hatchlings and is unaffected by estradiol-induced sex reversal

ABSTRACT Considerations of the impact climate change has on reptiles are typically focused on habitat change or loss, range shifts and skewed sex ratios in species with temperature-dependent sex determination. Here, we show that incubation temperature alters stripe number and head colouration of hatchling American alligators (Alligator mississippiensis). Animals incubated at higher temperatures (33.5°C) had, on average, one more stripe than those at lower temperatures (29.5°C), and also had significantly lighter heads. These patterns were not affected by estradiol-induced sex reversal, suggesting independence from hatchling sex. Therefore, increases in nest temperatures as a result of climate change have the potential to alter pigmentation patterning, which may have implications for offspring fitness.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

IC w22_phadiagractox Highlight: Composition-dependent melting temperature of a compound [Poster]

Figure 1 displays, ambient melting points of the Au-Cu system as a function of Cu atomic percent: present model vs. experimental data from four different sources. Figure 2 displays, ambient melting points of the U-O system as a function of O atomic percent: present model vs. both experiment and quantum molecular dynamics (QMD) simulations on the stoichiometric U-O compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Applying Two-Dimensional Correlation Spectroscopy and Principal Component Analysis to Understand How Temperature Affects the Neptunium(V) Absorption Spectrum

The visible-near infrared (Vis-NIR) electronic absorption spectrum of neptunium(V) (NpO 2 + ) comprises numerous f-f electronic transitions with mostly undocumented temperature dependencies. The effect of temperature on the absorption spectrum of the pentavalent neptunyl dioxocation (NpO 2 + ) is an important factor to consider with spectrophotometric applications but has often been overlooked. Optical Vis-NIR absorption spectra (400–1700 nm) of Np(V) (0.017–0.89 M) in 1 M nitric acid were evaluated with varying temperatures (T = 10–80 °C). The intensity, position, and overall shape of the bands were sensitive to interactions with the solvent and coordination environment. Numerous temperature-induced isosbestic points were identified resulting from dynamic, overlapping peak shifts. Spectral variations were characterized using principal component analysis (PCA) and 2D correlation spectroscopy (COS). 2D-COS revealed that the absorption band near 1095 nm likely consists of two bands centered near 1087 and 1096 nm, which cannot be explained by current computational methods. 2D-COS analysis also provided an unambiguous assignment of unresolved peaks in the visible region for comparison with computational predictions. PCA was used to identify nonlinearity in the spectral response at elevated Np(V) concentrations ≥ 0.5 M. This unique experimental data and interpretation will foster a deeper understanding of the absorption spectra for complex actinyl ions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4$\textit{H}$-SiC

Silicon-vacancy qubits in silicon carbide ( Si C ) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4$\textit{H}$-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. Finally, we also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Delay-resolved spectroscopy in terahertz photonic circuits

Photonic integrated circuits incorporating intersubband transitions are ideal for mid-infrared and terahertz nanophotonics. However, the design of epitaxies has long been inhibited by two factors: the modest predictivity of ab initio theory and the absence of absolute intersubband gain and loss measurements under operating conditions. Existing measurements either yield inaccurate gain profiles or do not accurately assess dependence on frequency, bias, and temperature. Here, we present a delay-resolved absolute-referencing method for accurate gain evaluation without these limitations, addressing a long-standing challenge. By creating a photonic circuit that allows broadband pulses to traverse different lengths of a gain medium, we measure the absolute transmission of intersubband structures. Gain profiles match theoretical predictions at lower temperatures, with gain and dispersion clamping after lasing, and faster-than-expected degradation occurs at higher temperatures. Our approach provides a precise experimental evaluation of temperature-dependent gain performance and gives insight into optimizing temperature performance and frequency comb designs.

Optical spectroscopy↗
DOE OSTI2020

Spin dynamics and relaxation in 7.6 nm thin film of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 : ac magnetic susceptibility and magnetic viscosity investigations

Analysis of the results from our investigations of the temperature dependence of ac susceptibilities (χ' and χ'') and magnetic viscosity in a 7.6 nm thin film of La 0.7 Sr 0.3 MnO 3 grown on SrTiO 3 (001) substrate is presented. The Curie temperature (T C ) of this film is magnetic field (H) dependent, varying as [T C (H) - T C (0)] ~ H n with T C (0) = 270 K and n = 0.15. Temperature dependence of χ' and χ'' measured at ac frequencies f m in the range of 0.1–10 kHz shows a broad peak near 230 K associated with the blocking temperature (T B ) of spin clusters present in the 1.4 nm surface layer and a frequency dependent peak near 270 K associated with T C . The mean relaxation time τ determined from the Cole–Cole analysis of the temperature dependent χ' and χ'' is shown to fit the Vogel–Fulcher law: τ = τ 0 exp[ΔE/k B (T - T 0 )] with T 0 = 245 K, ΔE/k B = 270 K = T C and τ 0 = 1.2 x 10 -9 s. Magnetic viscosity S (measured in H = 0 for a sample cooled in H = 50 Oe) determined from the fit to the magnetization: M (t)= M (0) – S ln t, with time t up to 2 h, shows a peak at 230 K above which M (2 h) switches to negative values for temperatures up to T C (0). It is argued that this negative magnetization results from an interaction between the superparamagnetic spin clusters and the ferromagnetic phase, both being present in the temperature range of T B < T < T C .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Frequency dependence of BCS and residual resistance using multi-mode measurement of nitrogen-doped single-cell elliptical cavities

Various cavity surface treatments have been found to significantly improve cavity quality factor, Q0, with one such treatment being nitrogen-doping (N-doping). N-doped 1.3 GHz cavities were the first found to exhibit anti-Q slope, the increase of Q0 with accelerating field, Eacc. However, even with the use of the same N-doping recipes, this anti-Q slope behavior has not been realized in sub-GHz frequency cavities. In this study, we measured the Q0 and surface resistance, RS, of our N-doped, single-cell, elliptical cavity for both the 644 MHz fundamental mode (FM) and 1.45 GHz higher-order mode (HOM). As a result of multi-mode measurements, the BCS and residual resistances, the temperature-dependent and temperature-in-dependent RF surface resistances, could be determined without the influence of cavity-to-cavity surface treatment variations. We will discuss the frequency-dependent behaviors of the BCS and residual resistances.

Accelerator Physics↗
DOE OSTI2020

Effect of CO{sub 2}-laser power density on the absorption coefficient of polycrystalline CVD diamonds

The effect of 1-s irradiation of an uncooled polycrystalline CVD diamond plate by a focused cw CO{sub 2} laser beam with a power density of 300 – 800 kW cm{sup −2} is investigated. The absorption coefficient of the sample at a power density of 800 kW cm{sup −2} is found to be 0.035 cm{sup −1} larger as compared with that at 300 kW cm{sup −2}, which is related to the temperature dependence of its phonon-induced absorption with a change in temperature from 44 to 100 °C. It is shown that polycrystalline diamond, in contrast to other optical materials, does not exhibit nonlinear (avalanche-like) rise in absorption at high CO{sub 2}-laser power densities, at least up to 800 kW cm{sup −2}. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2026

TEM Approaches for Microstructure-Informed Prediction of Mechanical Properties in Structural Alloys

Predicting the mechanical performance of structural alloys from their evolving microstructure remains a major challenge in materials science, particularly for nuclear structural materials, where irradiation-induced defects span multiple types and length scales and interact through complex mechanisms. The dispersed barrier hardening (DBH) [1] and Friedel–Kroupa–Hirsch (FKH) [2,3] models have been widely used to evaluate the hardening contributions of individual obstacles and to estimate tensile strength from quantified microstructures; however, when multiple size-dependent obstacles coexist and evolve, predicting temperature-dependent tensile strength becomes significantly more complex, and a fully consistent hardening model is still lacking. Transmission electron microscopy (TEM) plays a central role in refining hardening models and enabling predictive assessments of tensile strength evolution by providing quantitative characterization of dislocations, irradiation-induced defects (e.g., dislocation loops and cavities), precipitates, and grain structure (Fig. 1.). These experimentally measured defect densities are incorporated into physically based hardening models with size- and shape- dependent obstacle strengths [4], using root-sum-square superposition for obstacles of comparable strength and linear superposition for dissimilar ones [5]. In addition, recent advances in TEM [6-8], including high-resolution imaging, 4D-STEM strain mapping, EDS/EELS elemental analysis, and flash-polishing-based TEM specimen preparation and extraction-replica methods (Fig. 2), further improve the accuracy of microstructural quantification. By comparison with prior studies as well as our own results, we show that when TEM-derived microstructural information is carefully integrated with physically grounded hardening models, yield strength (or irradiation-induced hardening) measured at room temperature can be predicted with good quantitative agreement across multiple alloy classes. In-situ TEM combined with high-temperature mechanical testing represents an important next step for refining hardening models by directly probing dislocation–obstacle interactions across varying irradiation doses and temperatures [9]. Because the barrier strength factor (α) depends on both temperature and obstacle size, it should not be treated as a constant fitting parameter; rather, it must be explicitly evaluated to achieve physically meaningful predictions of mechanical behaviour at operating temperatures. This presentation therefore discusses why all strengthening contributions (e.g., Peierls stress, solid-solution strengthening, voids, bubbles, dislocation loops, dislocation lines, and grain boundaries) must be considered collectively, why appropriate superposition methods are essential when obstacles possess different barrier strength factors, how hardness measurements can be meaningfully related to tensile properties, and how TEM-derived microstructural information can be systematically incorporated into hardening models. More broadly, it outlines a pathway toward microstructure-informed prediction of mechanical properties and supports the goal of establishing science-based tools for evaluating structural materials in extreme environments [10].

Lin, Yan-Ru [ORNL] (ORCID:0000000339991473)↗
DOE OSTI2021

Quantum criticality in Ce 1 - x Sm x Co In 5

Motivated by the possibility of observing the coexistence between magnetism and unconventional superconductivity in heavy-fermion Ce 1-x Sm x CoIn 5 alloys, we studied how the samarium substitution on the cerium site affects the magnetic field-tuned-quantum criticality of stoichiometric CeCoIn 5 by performing specific heat and resistivity measurements. By applying an external magnetic field, we have observed Fermi-liquid to non-Fermi-liquid crossovers in the temperature dependence of the electronic specific heat normalized by temperature and of the resistivity. We obtained the magnetic-field-induced quantum critical point (QCP) by extrapolating to zero temperature the temperature-magnetic field dependence at which the crossovers take place. Furthermore, a scaling analysis of the electronic specific heat is used to confirm the existence of the QCP. We have found that the magnitude of the magnetic-field-induced QCP decreases with increasing samarium concentration. Our analysis of heat capacity and resistivity data reveals a zero-field QCP for x cr ≈0.15, which falls inside the region where Sm ions antiferromagnetism and superconductivity coexist.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Quadratic magnetoresistance across the insulator–metal transition in V4O7 thin films

We present a comparative magnetotransport study of V4O7 thin films grown simultaneously on single-crystal Al2O3 (r-cut) and amorphous SiO2 substrates, to examine substrate-induced effects on electronic transport across the insulator–metal transition (IMT). Temperature-dependent resistivity reveals a broad electronic ordering regime below the IMT, with both films exhibiting similar transition temperatures but differing by nearly an order of magnitude in absolute resistivity. Despite this strong substrate dependence of the resistivity scale, the magnetoresistance remains predominantly quadratic in magnetic field over wide temperature intervals for both substrates. Analysis of the quadratic magnetoresistance defines an effective mobility scale that evolves systematically across the IMT and exhibits a similar temperature dependence for the two films. Structural characterization, including atomic-resolution scanning transmission electron microscopy of the V4O7/Al2O3 interface and azimuthal X-ray diffraction measurements, reveals a sharp interface and well-defined in-plane crystallographic registry for the r-cut film, in contrast to the rotationally averaged in-plane structure expected for films grown on amorphous SiO2. These results indicate that while substrate-controlled structural registry modifies the resistivity scale, the quadratic magnetotransport response across the IMT remains largely robust, providing a consistent diagnostic of electronic transport in V4O7 thin films.

25 ENERGY STORAGE↗