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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It has been found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ~10 12 cm -2 , which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperature is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10 18 cm -3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

We report here on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

Time-resolved transmission and reflection measurements were performed for bulk GaN at room temperature to evaluate the energy of the first conduction band satellite valley. From this, the measurements showed clear threshold-like spectra for transmission decay and reflection rise times. The thresholds were associated with the onset of the intervalley electron scattering. Transmission measurements with pump and probe pulses in the near infrared produced an intervalley energy of 0.97 ± 0.02 eV. Ultraviolet pump and infrared probe reflection provided a similar value. Comparison of the threshold energies obtained in these experiments allowed estimating the hole effective mass in the upper valence band to be 1.4m 0 .Modeling of the reflection transients with rate equations has allowed estimating electron–LO (longitudinal optical) phonon scattering rates and the satellite valley effective mass.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0% to 28%) corresponds to a typical Urbach energy of 20 meV. A three-dimensional absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schrödinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below-band-gap absorption is particularly efficient in near-ultraviolet emitting quantum wells.When reverse biasing the device, the well-to-barrier below-band-gap absorption exhibits a red-shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue-shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the localization theory thus demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.

14 SOLAR ENERGY↗
DOE OSTI2016

Net Zero Pilot Program Lights the Path to Big Savings in Guam

Case study describes how the Army Reserve 9th Mission Support Command (MSC) reduced lighting energy consumption by 62% for a total savings of 125,000 kWh and more than $50,000 per year by replacing over 400 fluorescent troffers with 36 W LED troffers. This project was part of the Army Reserve Net Zero Pilot Program, initiated in 2013, to reduce energy and water consumption, waste generation, and utility costs.

doe/ee-1492↗
DOE OSTI2016

99th Regional Support Command Uses LED Lighting to Capture Significant Savings

Case study describes how the Army Reserve 99th Regional Support Command (RSC) cut its energy consumption in half at the Support Command's Technical Sergeant Vernon McGarity Army Reserve Center by replacing more than 1,200 fluorescent troffers with 46 W and 61 W LED troffers with dimmers. The site achieved annual savings of more than 180,000 kWh and more than $20,000 in energy cost savings.

energy-efficient lighting↗
DOE OSTI2019

Electron Emission Spectroscopy of III-N Semiconductor Devices

Gallium nitride (GaN) has proven to be a semiconductor material system that is ideal for the development of lasers and light-emitting diodes (LEDs) with emission wavelengths spanning the visible spectrum. In particular, the prevalence of white LEDs has been made possible by pairing GaN-based optoelectronic devices emitting at 450 nm (blue) with phosphors for down-conversion. The efficiency of these devices, although better than alternatives, is limited at high current densities (efficiency droop), elevated temperatures (thermal droop) and is markedly worse at longer wavelengths. Understanding the physical origins of these efficiency problems can provide a pathway for engineering solutions to these long-standing issues. Despite extensive efforts to improve and understand these limitations, the unambiguous identification of these efficiency loss mechanisms has remained an open topic of research. Most studies of the efficiency loss mechanisms in GaN LEDs rely on an indirect measurement of carrier dynamics by analysis of the emitted light. The inadequacy of these indirect measurements has motivated the development of an electron spectroscopy technique, capable of directly probing several electron transport and recombination mechanisms in GaN-based optoelectronic devices. In 2013, electron emission spectroscopy (EES) was used for the first time to measure high energy electrons generated via Auger recombination in the active region of an LED. This result brought an end to the longstanding controversy over the causes for efficiency droop at high carrier densities. Our analysis of the kinetic energy of vacuum emitted electrons from GaN-based LEDs xiii has unambiguously identified carrier overshoot as the dominant mechanism responsible for thermal droop. Control experiments from p-n diodes show evidence for a previously unknown hot carrier generating process, likely trap-assisted Auger recombination (TAAR) occurring in AlGaN/GaN barrier heterostrucutres. We also discuss the possibility of TAAR occurring in InGaN quantum wells through examination of low-efficiency LEDs grown by molecular beam epitaxy. Finally, we discuss preliminary EES results regarding long wavelength GaN LEDs as well as the first EES measurements from semipolar ($20\bar2\bar1$) GaN LEDs and p-n diodes.

light emitting diodes, solid state lighting↗
DOE OSTI2024

Enhanced light absorption for solid-state brown carbon from wildfires due to organic and water coatings

Abstract Wildfires emit solid-state strongly absorptive brown carbon (solid S-BrC, commonly known as tar ball), critical to Earth’s radiation budget and climate, but their highly variable light absorption properties are typically not accounted for in climate models. Here, we show that from a Pacific Northwest wildfire, over 90% of particles are solid S-BrC with a mean refractive index of 1.49 + 0.056 i at 550 nm. Model sensitivity studies show refractive index variation can cause a ~200% difference in regional absorption aerosol optical depth. We show that ~50% of solid S-BrC particles from this sample uptake water above 97% relative humidity. We hypothesize these results from a hygroscopic organic coating, potentially facilitating solid S-BrC as nuclei for cloud droplets. This water uptake doubles absorption at 550 nm and the organic coating on solid S-BrC can lead to even higher absorption enhancements than water. Incorporating solid S-BrC and water interactions should improve Earth’s radiation budget predictions.

54 ENVIRONMENTAL SCIENCES↗