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DOE OSTI2026

Direct cross section measurement of 102 Pd ⁢(𝛾,𝑝) and 102 Pd ⁢(𝛾,𝛼) for the astrophysical 𝑝 process

Background: A handful of neutron-deficient stable nuclei, known as the “p nuclei,” cannot be produced through astrophysical neutron capture processes. Instead, some of these nuclei are proposed to be produced by 𝛾-induced reactions on existing r- and s-process seeds. The specific astrophysical site or sites are not yet identified, however, with uncertainties in the cross sections of these 𝛾-induced reactions playing a role. Databases of reaction rates for astrophysical simulations often rely on theoretical statistical model calculations, such as Hauser-Feshbach, for rates where no experimental information is known. However, reasonable variations in the choice of parametrizations of various nuclear properties can create order-of-magnitude variations in the final predicted cross sections and reaction rates, which are then propagated through the models to the predicted final abundances. Purpose: To better constrain these statistical model calculations and ultimately reduce the uncertainties from the nuclear physics on our understanding of the p nuclei, a measurement of the cross sections of 𝛾-induced reactions on the p-nucleus 102 Pd was undertaken. This work represents the first measurement of its kind, using segmented silicon detectors to measure prompt charged particle emission from 𝛾-induced reactions. Methods: Quasimonoenergetic gamma beams from the High Intensity 𝛾 Source facility bombarded an enriched 102 Pd target. A segmented silicon array was arranged to detect the particles emitted from (𝛾,𝑝) and (𝛾,𝛼) reactions. Results: Reaction cross sections were deduced at multiple 𝛾-beam energies between 10 and 19 MeV, and compared to statistical model calculations using talys-1.96. The 102 Pd ⁢(𝛾,𝑝)⁢ 101 Rh reaction cross section was reasonably well reproduced by a subset of photon strength functions and level densities, though the strength to the ground state of 101 Rh was underestimated at higher incident gamma energies. The 102 Pd ⁢(𝛾,𝛼)⁢ 98 Ru was in general overpredicted by the various alpha-nucleus optical model potentials. Conclusions: While the theoretical cross sections used to model the (𝛾,𝑝) reactions for the p process may be reasonable, a more careful approach is needed in the case of (𝛾,𝛼). Further work to probe gamma-induced reaction cross sections at and near the p nuclei is warranted.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

NASA NTRS1986

Thermal detectors for high resolution spectroscopy

Cryogenic microcalorimeters can be made sensitive enough to measure the energy deposited by a single particle or X-ray photon with an accuracy of about one electron volt. It may also be possible to construct detectors of several-kilograms mass whose resolution is only a few times worse than this. Data from relatively crude test devices are in good agreement with thermal performance calculations, and a total system noise of 11 eV FWHM has been obtained for a silicon detector operating at 98 mK. Observations of 35 eV FWHM for 6-keV X-rays with a different device have been made.

Mccammon, D.↗

DOE OSTI2020

Highly efficient photon detection systems for noble liquid detectors based on perovskite quantum dots

Abstract Wavelength shifting photon detection systems (PDS) are the critical functioning components in noble liquid detectors used for high energy physics (HEP) experiments and dark matter search. The vacuum ultraviolet (VUV) scintillation light emitted by these Liquid argon (LAr) and liquid Xenon (LXe) detectors are shifted to higher wavelengths resulting in its efficient detection using the state-of-the-art photodetectors such as silicon photomultipliers (SiPM). The currently used organic wavelength shifting materials [such as 1,1,4,4 Tetraphenyl Butadiene (TPB)] have several disadvantages and are unreliable for longterm use. In this study, we demonstrate the application of the inorganic perovskite cesium lead bromide (CsPbBr 3 ) quantum dots (QDs) as highly efficient wavelength shifters. The absolute photoluminescence quantum yield of the PDS fabricated using these QDs exceeds 70%. CsPbBr 3 -based PDS demonstrated an enhancement in the SiPM signal enhancement by up to 3 times when compared to a 3 µm-thick TPB-based PDS. The emission spectrum from the QDs was optimized to match the highest quantum efficiency region of the SiPMs. In addition, we have demonstrated the deposition of the QD-based wavelength shifting material on a large area PDS substrate using low capital cost and widely scalable solution-based techniques providing a pathway appropriate for meter-scale PDS fabrication and widespread use for other wavelength shifting applications.

47 OTHER INSTRUMENTATION↗

NASA NTRS2006

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Yan, Feng↗

NASA NTRS2007

Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass optical filters. In a typical application, this heterostructure would be replicated in each pixel of an image-detecting integrated circuit of the active-pixel-sensor type (see figure). The design of the heterostructure would exploit the fact that within the visible portion of the spectrum, the characteristic depth of penetration of photons increases with wavelength. Proceeding from the front toward the back, each successive long-wavelength-pass filter would have a longer cutoff wavelength, and each successive photodetector would be made thicker to enable it to absorb a greater proportion of incident longer-wavelength photons. Incident light would pass through the first photodetector and encounter the first filter, which would reflect light having wavelengths shorter than its cutoff wavelength and pass light of longer wavelengths. A large portion of the incident and reflected shorter-wavelength light would be absorbed in the first photodetector. The light that had passed through the first photodetector/filter pair of layers would pass through the second photodetector and encounter the second filter, which would reflect light having wavelengths shorter than its cutoff wavelength while passing light of longer wavelengths. Thus, most of the light reflected by the second filter would lie in the wavelength band between the cutoff wavelengths of the first and second filters. Thus, further, most of the light absorbed in the second photodetector would lie in this wavelength band. In a similar manner, each successive photodetector would detect, predominantly, light in a successively longer wavelength band bounded by the shorter cutoff wavelength of the preceding filter and the longer cutoff wavelength of the following filter.

Wang, Yu↗

DOE OSTI2023

Polarization-independent photonic Bragg grating filter with cladding asymmetry

A photonic Bragg grating is a fundamental building block that reflects the direction of wave propagation through spatial phase modulation and can be implemented using sidewall corrugation. However, due to the asymmetric aspect ratio of a waveguide cross section, typical Bragg gratings exhibit a strong polarization sensitivity. Here, we show that photonic Bragg gratings with cladding asymmetry can enable polarization-independent notch filters by rotating input polarizations. Such Bragg gratings strongly couple transverse electric (TE) and transverse magnetic (TM) modes propagating in opposite directions, filtering the input signal and reflecting the rotated mode. We analyzed this polarization-rotating Bragg grating using the coupled-mode theory and experimentally demonstrated it on a silicon-on-insulator platform. Our device concept is simple to implement and compatible with other platforms, readily available as polarization transparent Bragg components.

Pimbi, Daniel (ORCID:000000025933203X)↗

NASA NTRS2003

Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors

Curved-focal-plane arrays of back-illuminated silicon-based photodetectors are being developed. The basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (e.g., a photographic film or an array of photodetectors) conform to a curved focal surface, instead of following the customary practice of designing the optics to project an image onto a flat focal surface. Eyes are natural examples of optical systems that have curved focal surfaces on which image sensors (retinas) are located. One prior approach to implementation of this concept involves the use of curved-input-surface microchannel plates as arrays of photodetectors. In comparison with microchannel plates, these curved-focal-plane arrays would weigh less, operate at much lower voltages, and consume less power. It should also be possible to fabricate the proposed devices at lower cost. It would be possible to fabricate an array of photodetectors and readout circuitry in the form of a very-large-scale integrated (VLSI) circuit on a curved focal surface, but it would be difficult and expensive to do so. In a simple and inexpensive alternate approach, a device (see figure) would have (1) a curved back surface, onto which light would be focused; and (2) a flat front surface, on which VLSI circuitry would be fabricated by techniques that are well established for flat surfaces. The device would be made from ultrapure silicon, in which it is possible to form high-resistivity, thick photodetectors that are fully depleted through their thicknesses. (As used here, "thick means having a thickness between a fraction of a millimeter and a few millimeters.) The back surface would be polished to the curvature of the focal surface of the intended application. To enable the collection of charge carriers excited by photons near the back surface or in the bulk of the device, it would be necessary to form a transparent or semitransparent back-surface electrode, possibly by delta doping. [Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac function (impulse function): the dopant is concentrated in a very thin layer - nominally, a single atomic layer.]

Nikzad, Shouleh↗

NASA NTRS2018

STROBE-X: A Probe-Class Mission for X-Ray Spectroscopy and Timing on Timescales from Microseconds to Years

We describe the Spectroscopic Time-Resolving Observatory for Broadband Energy X-rays (STROBE-X), a probe-class mission concept that will provide an unprecedented view of the X-ray sky, performing timing and spectroscopy over both a broad energy band (0.2-30 keV) and a wide range of timescales from microseconds to years. STROBE-X comprises two narrow-field instruments and a wide field monitor. The soft or low-energy band (0.2-12 keV) is covered by an array of lightweight optics (3-m focal length) that concentrate incident photons onto small solid-state detectors with CCD-level (85-175 eV) energy resolution, 100 ns time resolution, and low background rates. This technology has been fully developed for NICER and will be scaled up to take advantage of the longer focal length of STROBE-X. The higher-energy band (2-30 keV) is covered by large-area, collimated silicon drift detectors that were developed for the European LOFT mission concept. Each instrument will provide an order of magnitude improvement in effective area over its predecessor (NICER in the soft band and RXTE in the hard band). Finally, STROBE-X offers a sensitive wide-field monitor (WFM), both to act as a trigger for pointed observations of X-ray transients and also to provide high duty-cycle, high time-resolution, and high spectral-resolution monitoring of the variable X-ray sky. The WFM will boast approximately 20 times the sensitivity of the RXTE All-Sky Monitor, enabling multi-wavelength and multi-messenger investigations with a large instantaneous field of view. This mission concept will be presented to the 2020 Decadal Survey for consideration.

Ray, Paul S.↗

DOE OSTI2026

X-ray Response of the Fully-Depleted, p-Channel SiSeRO-CCD

We present an X-ray characterization of a fully depleted, 725 $μ$m thick p-channel SiSeRO CCD. Measurements with a $^{55}$Fe source yield an energy resolution of $54 \pm 0.9$ eV ($14.6 \pm 0.25 e^{-}$) at 5.9 keV for single-pixel events, demonstrating that the SiSeRO amplifier preserves the intrinsic charge resolution of the CCD under multi-sample non-destructive readout. Characterization with a $^{241}$Am source extends the response to higher-energy photons, with reconstructed spectral features observed between 9-26 keV and the 59.5 keV $γ$ emission. These measurements, together with a muon-derived diffusion calibration, show that charge transport and diffusion are consistent with interactions spanning the full sensor depth. These results demonstrate that the SiSeRO CCD simultaneously achieves sub-electron noise performance and efficient charge collection in a thick, fully depleted silicon detector. This combination enables X-ray spectroscopy across a broad energy range while maintaining sensitivity to faint signals.

Cuevas-Zepeda, Julian↗

DOE OSTI2024

Soft X-ray quantum efficiency of a commercial CMOS imaging sensor

The demonstrated performance and cost-effectiveness of complementary metal-oxide-semiconductor (CMOS) sensors make them a potentially attractive option for low-cost space-based X-ray observatories. We have previously reported on the performance of a commercially available backside-illuminated Sony IMX290LLR-C CMOS sensor and found it to offer X-ray spectral resolutions comparable to the charged coupled devices (CCDs) aboard Suzaku and Chandra and to have a sufficient radiation hardness for use in low Earth orbit. Here, in this work, we report on the quantum efficiency (QE) of this sensor, an essential metric for modeling the sensitivity of an instrument as an X-ray detector. Using the Advanced Photon Source at Argonne National Laboratory, we measure the soft X-ray QE of this CMOS sensor to be 0.28 ± 0.02 at a photon energy of 490.5 eV. This energy was chosen for its proximity to the astrophysically important O VII triplet emission lines (~574 eV) studied by the HaloSat mission. Although not surpassing that of the back-illuminated CCDs aboard Suzaku and Chandra, this QE compares favorably to that of the front-illuminated CCDs aboard the same observatories and is competitive with that of the silicon drift detectors used aboard HaloSat, making it a strong candidate for use on future X-ray small satellite (SmallSat) missions.

47 OTHER INSTRUMENTATION↗

NASA NTRS1986

Development of the EXITE detector - A new imaging detector for 20 - 300 keV astronomy

The development and testing of a detector to be used in the Energetic X-ray Imaging Telescope Experiment (EXITE) are reported. It consists of a 34 cm diameter NaI(Tl) crystal coupled directly to a single large image intensifier tube with associated silicon PIN diode readout. The measured spatial and energy resolutions at 122 keV are 6mm (FWHM) and 9 percent (FWHM), respectively. This energy resolution is about 50 percent better than that of any previously flown hard X-ray experiment. These resolutions decrease with the square root of the energy of the incident X-ray, indicating that they are determined by the number of photons emitted in the NaI(Tl) scintillator light flash.

Garcia, M. R.↗

DOE OSTI2025

Spin Decoherence Dynamics of Er 3+ in CeO 2 Films

Developing telecom-compatible spin-photon interfaces is essential towards scalable quantum networks. Erbium ions (Er 3+ ) exhibit a unique combination of a telecom (1.5 mu m) optical transition and an effective spin-1=2 ground state, but identifying a host that enables heterogeneous device integration while preserving long optical and spin coherence remains an open challenge. In this work, we explore the potential of Er 3+ :CeO 2 films on silicon and study the Er 3+ spin coherence, offering low nuclear spin density and the potential for on-chip integration. We demonstrate a 38.8 mu s spin coherence, which can be extended to 176.4 mu s with dynamical decoupling. Pairing experiments with cluster correlation expansion calculations, we identify spectral diffusion induced by bath Er 3+ spin flip-flops as the dominant decoherence mechanism and provide pathways to millisecond-scale coherence.

36 MATERIALS SCIENCE↗

DOE OSTI2020

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 µm thick cadmium telluride (CdTe) sensor. The full imager is a 2 × 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 × 10 6 80 keV x-rays. Here, a charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

99 GENERAL AND MISCELLANEOUS↗

NASA NTRS1978

Nuclear electric power sources

Measurements on radioactive commercial p-n junction silicon cells show that these units are capable of delivering several hundred microwatts per curie of Am-241 alpha source, indicating their usefulness in such electronic devices as hearing aids, heart pacemakers, electronic watches, delay timers and nuclear dosimeter chargers. It is concluded that the Am-241 sources are superior to the beta sources used previously, because of higher alpha specific ionization and simultaneous production of low energy photons which are easily converted into photoelectrons for additional power.

Singh, J. J.↗

NASA NTRS1985

Thermal detectors as single photon X-ray spectrometers

In a thermal detector employed for X-ray spectroscopy applications, the energy of an X-ray is converted to heat in a small mass, and the energy of that X-ray inferred from the size of the temperature rise. The present investigation is concerned with the possibility to make an extremely low heat capacity calorimeter which can be employed as a thermal detector. Several types of calorimeters were fabricated and tested at temperatures as low as approximately 0.05 K. The obtained devices make use of thermistors constructed of melt-doped silicon, nuclear transmutation doped (NTD) germanium, and ion-implanted silicon with a variety of materials for the support and electrical leads. The utility of these microcalorimeters as X-ray spectrometers could be verified.

Moseley, S. H.↗

DOE OSTI2025

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories

Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning.

Nanoscale devices↗

DOE OSTI2024

Toward quantum networking with frequency-bin qudits

Quantum networking holds tremendous promise in transforming computation and communication. Entangled-photon sources are critical for quantum repeaters and networking, while photonic integrated circuits are vital for miniaturization and scalability. In this talk, we focus on generating and manipulating frequency-bin entangled states within integrated platforms. We encode quantum information as a coherent superposition of multiple optical frequencies; this approach is favorable due to its amenability to high-dimensional entanglement and compatibility with fiber transmission. We successfully generate and measure the density matrix of biphoton frequency combs from integrated silicon nitride microrings, fully reconstructing the state in an 8 × 8 two-qudit Hilbert space, the highest so far for frequency bins. Moreover, we employ Vernier electro-optic phase modulation methods to perform time-resolved measurements of biphoton correlation functions. Currently, we are exploring bidirectional pumping of microrings to generate indistinguishable entangled pairs in both directions, aiming to demonstrate key networking operations such as entanglement swapping and Greenberger–Horne–Zeilinger state generation in the frequency domain.

Myilswamy, Karthik V.↗

NASA NTRS1992

Performance measurement results for a 220 Mbps QPPM optical communication receiver with an EG/G Slik APD

The performance of a 220 Mbps quaternary pulse position modulation (QPPM) optical communication receiver with a 'Slik' silicon avalanche photodiode (APD) and a wideband transimpedance preamplifier in a small hybrid circuit module was measured. The receiver performance had been poor due to the lack of a wideband and low noise transimpedance preamplifier. With the new APB preamplifier module, the receiver achieved a bit error rate (BER) of 10 exp -6 at an average received input optical signal power of 4.2 nW, which corresponds to an average of 80 received (incident) signal photons per information bit.

Davidson, Frederic M.↗