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A simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.
The partitioning of light elements (e.g., Si, C, H, etc.) between silicate melts and iron metal alloys as a function of pressure and temperature is a critical constraint in defining the compositional evolution of planetary interiors. While there are a significant number of experimental studies in the literature that examine the various influences of oxygen fugacity, temperature, pressure, and composition on the metal-melt partitioning of silicon, it is difficult to disentangle the effects of each variable due to the nominally independent parameters (e.g., pressure, temperature, composition) being collinear. To better test for the independent effects of pressure, temperature, and melt composition on the partitioning of silicon between iron alloy and silicate melt, new high temperature (1800°–2500°C), rapid quench (~700°C/s) aerodynamic levitation laser-heating experiments in the Fe-Si-Mg-O (En65-Fa5-Si3-Fe27) system were conducted. This high temperature, low pressure method is ideal for these experiments because it eliminates the metal container as a sink for elements of interest to partition into, and it has a rapid quench rate that minimizes potential exsolution of silicon from the metal phase during quench cooling. Given the short run times of the levitation experiments (30–60 seconds), a time series at a lower temperature (1700°C) in a vertical gas-mixing muffle tube furnace was also conducted to assess equilibrium times of the bulk composition. All successful runs were imaged using back-scatter electron imaging and analyzed for phase composition using a JEOL 8530F field emission microprobe. These new data were added to a comprehensive and internally consistent data set created from published experiments, and subsequently modeled using parameters designed to minimize collinearity (e.g., optical basicity is used as a proxy for melt composition). High collinearity is found in the data set however between temperature and oxygen fugacity, precluding any model that contains both as nominally independent variables. The resulting model demonstrates a statistically significant effect of pressure, temperature, and melt composition on the partitioning of silicon in Fe-rich metal, which has implications for the formation of planetary cores in rocky planets and provides important constraints on potential bulk core compositions.
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.
Monocrystalline silicon is an excellent X-ray mirror substrate material due to its high stiffness, low density, high thermal conductivity, zero internal stress, and commercial availability. Our work at NASA Goddard Space Flight Center focuses on identifying and developing a manufacturing process to produce high resolution and lightweight X-ray mirror segments in a cost and time effective manner. Previous efforts focused on demonstrating the feasibility of cylindrical silicon mirror polishing and lightweighting. Present efforts are aimed towards producing true paraboloidal and hyperboloidal mirror surfaces on the lightweight silicon segments. This paper presents results from these recent investigations, including a mirror which features a surface quality sufficient for a 3 arcsecond telescope.
A thermal oxide patterning method has proven to be effective for correcting coating-stress-induced distortion on flat silicon wafers. We report progress on developing this method for correcting curved silicon mirrors distorted by front-side iridium coatings. Owing to the difference in geometry, a finite element model has been established to calculate the appropriate duty cycle maps in thermal oxide hexagon patterns used for compensation. In addition, a photolithographic process, along with three-dimensional printed equipment, has been developed for creating patterns precisely on the back side of curved mirrors. The developed method has been used to recover the original surface shape of two silicon mirrors which are 100-mm long, 0.5-mm thick, having 312-mm radius of curvature, and 30 deg in azimuthal span (Wolter-I geometry). These mirrors’ front sides are sputter-coated by 20-nm iridium layers with ∼-70 N∕m integrated stress. Measurement results show that the developed method can mitigate coating-induced distortion by a factor of ∼5 in RMS height and ∼4 in RMS slope error, corresponding to ∼0.5 arc sec RMS slope error. Residual errors after correction are dominated by midfrequency ripples created during the annealing process, which will be resolved in the future. The presented method is precise and inexpensive and a potential candidate for resolving the coating stress issue for Lynx optics in the future.
Space-based astrophysical and remote sensing observations often require the detection and measurement of light originating from distant and relatively faint objects. These observations are highly susceptible to scattered light which may introduce imaging artifacts, obscure object details, and increase measurement noise. This paper describes the initial work of characterizing representative black materials used in coronagraph instruments and other spaceborne instruments. Measurements of “blackness” and the achieved reflectance of black silicon are provided in the spectral range from 400nm to 2500nm using 8o directional hemispherical measurements. The bidirectional reflectance of black silicon was also measured at discrete wavelengths, 633nm, and 1064nm, using the optical scatterometer located at NASA Goddard Space Flight Center’s Diffuser Calibration Laboratory (DCL). A 100mm diameter black silicon sample was fabricated and optically characterized. The BRDF of other well-known black materials such as Z306 and Fractal Black are also presented and discussed.
We report the results of the evaluation of single crystal 4H-silicon carbide piezoresistive pressure sensors that were directly inserted at the compressor and core exhaust nozzle exits, in shear contact with the engine-internal flow streams of the NASA DGEN Aeropropulsion Research Turbofan, where the operating temperatures at maximum power were ~230 oC, and ~460 oC, respectively. In addition to demonstrating sensor survivability during this maiden test, the frequency responses of the silicon-carbide sensors at the core-nozzle exit were compared against industry-standard silicon-based piezoresistive pressure transducers that externally placed, using an infinite-tube-probe arrangement. The low-voltage output of these early-development SiC sensors limited the frequency range with an acceptable signal-to-noise-ratio for the current application to less than about 2,500 Hz. The low output of the SiC sensors were due to a conservative burst-pressure diaphragm design that can be optimized to increase the frequency range. The results from this initial campaign offered insights to aspects of the sensor that would require further improvement, with the goal of achieving full-bandwidth capture of engine unsteady pressure fluctuations by direct interrogation of the flow field in hostile-environment engine-core components.
Diffused n-on-p silicon particle detectors were irradiated with 1-Mev electrons, and with 31-Mev and 8.2-Mev protons. The detector capacitance was observed to increase with electron irradiation and to decrease with proton irradiation. A physical interpretation is given in terms of defect energy levels known to be introduced in silicon by irradiation. Defect ionization states are taken to be characteristic of the space-charge region, rather than of bulk silicon. The relation to other studies of damage in semiconductor particle detectors is pointed out, considering differences in the types of detector and irradiation used. The significance of these results is discussed for detector applications where the damage threshold is exceeded.
Vapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process. This oxide fills in any imperfections that exist in the thermally grown oxide layer and is of greater thickness than that layer. This process is used to deposit protective silicon dioxide coatings on optical surfaces.
Woven graphite cloth facilitates the vacuum deposition of thin films of silicon monoxide on substrate surfaces. The cloth serves both as a container and electric heating element for the silicon monoxide. It minimizes and prevents the silicon monoxide particle ejection, provides uniform heat distribution, and cools rapidly by radiation.
Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.
The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There are also differences noted between single junction rectifiers of the same type made by different manufacturers, which emphasizes the need for better selection of devices used in spacecraft.
Sliding friction and wear experiments were conducted with ternary ordered alloys of iron and cobalt containing various amounts of silicon to 5 weight percent. The friction and wear of these alloys were compared to those for binary iron-cobalt alloys in the ordered and disordered states and to those for the conventionally used bearing material, 440-C. Environments in which experiments were conducted included air, argon, and 0.25percent stearic acid in hexadecane. Results indicate that a ternary iron - cobalt - 5-percent-silicon alloy exhibits lower friction and wear than the simple binary iron-cobalt alloy. It exhibits lower wear than 440-C in all three environments. Friction was lower for the alloy in argon than in air. Auger analysis of the surface of the ternary alloy indicated segregation of silicon at the surface as a result of sliding.
A theoretical investigation was conducted to estimate the spectral properties of argon as a function of pressure, temperature, and wave number. The spectral characteristics of the argon buffer gas exert a strong influence on radiative energy transfer in the in-reactor test configuration of the nuclear light bulb engine. An existing computer program was modified and used to calculate the spectral absorption coefficients of argon at total pressures of 50, 100, 250, 500, 750 and 1000 atm in the temperature interval between 1000 and 30,000 K. At each pressure and temperature, spectral properties were calculated for forty-seven wave numbers in the interval between 1000 and 1,000,000 cm/1. Estimates of the spectral absorption coefficients of silicon were made as part of an evaluation of silicon vapor as a possible buffer-gas seeding agent for the reference nuclear light bulb engine. Existing cross-section data were used to calculate the spectral characteristics of silicon at twenty-four temperatures in the interval between 2000 and 10,000 K.
Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.
Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.
In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.
The outer planetary exploration missions studied by the Jet Propulsion Laboratory require silicon-germanium radioisotope thermoelectric generators (RTGs) in which the factors of safety are as low as is compatible with the reliable satisfaction of the power needs. Work on silicon germanium sublimation performed at the Jet Propulsion Laboratory is presented. Analytical modeling work on the solid-diffusion process involved in the steady-state (free) sublimation of silicon germanium is described. Analytical predictions are made of the sublimation suppression which can be achieved by using a cover gas. A series of accelerated (high-temperature) tests which were performed on simulated hardware (using four SiGe couples) to study long-term sublimation and reaction mechanisms are also discussed.