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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Epitaxial Integration of Dirac Semimetals with Si(001)

Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) is demonstrated through two routes. First, Cd3As2(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd3As2(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Ultraviolet solar identifications based on extended absorption series observed in the laboratory spectrum of Si I

The absorption spectrum of Si I in the wavelength region between 1500 and 1900 A has been photographed at high resolution. The silicon vapor was produced in a 122-cm-long King furnace at 1800 to 2300 C. Forty-two Rydberg series have been observed from the ground state terms 3p(2)3P and 1D to terms associated with the 3pns and 3pnd configurations. All of the series from these configurations with J less than 4 have been extended with the 3pnd 3D(3) levels reaching n = 56. Numerous perturbations have been observed. This laboratory work has provided the basis for extending the identification of silicon lines in the solar spectrum. Nearly all lines found in the laboratory spectrum are also found in rocket spectrograms of the solar chromosphere. More than 300 lines have been attributed to Si I. The excellent correlation between laboratory and solar Si I lines is illustrated.

Moore, C. E.↗
NASA NTRS1976

Interaction of metal layers with polycrystalline Si

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Nakamura, K.↗
NASA NTRS1977

A comparison of GaAs and Si hybrid solar power systems

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

Heinbockel, J. H.↗
NASA NTRS1981

Effects of diffusion and mass flows on C IV and Si IV lines formed in the solar atmosphere

A model for the transition region is derived from an initial interpretation of EUV observations, assuming ionization equilibrium and constant elemental abundance with height. The effects of diffusion and mass flows are then included in the initial model and the emergent profiles of several C IV and Si IV lines are computed. It is found that diffusion and mass flows have a strong effect on both the emergent intensity and spectral shape of these lines. Diffusion acts to deplete the transition region of heavy ions to an extent which depends on the detailed temperature and density structure. The net effect is a weighting of the coronal emission relative to that in the transition. On the basis of the results, it is suggested that the downflows observed in the network in lines of C IV and Si IV could be due to gravitational settling of the ions following their injection, via diffusion, into the corona from spicules. When flows are superposed on the basic diffusion model, the rapid change in elemental abundance characteristic of the model is virtually eliminated and the coronal contribution to the emission in C IV and Si IV lines becomes negligible relative to that in the transition region. Flows have a strong effect on the computed line intensities and introduce large asymmetries into the line shapes.

Roussel-Dupre, R.↗
NASA NTRS1981

A classification system for O-B2 stars based on the Si IV and C IV resonance lines

Low-dispersion ultraviolet spectra from Skylab Experiment S-019 are used to explore the variations of Si IV and C IV line strengths with temperature and luminosity. These considerations lead to a classification system in which the Si/C ratio is used to discriminate luminosity among the O stars and temperature among the O9-B2 stars of lower luminosity. Stars falling in these two regimes may be distinguished either by the presence of C IV emission or on the basis of C IV absorption strength. The log(Si IV/C IV) vs C IV diagram is proposed as a primary tool in such a classification system. The rapid variation in the Si IV/C IV ratio from less than 1/10 at O9 to greater than 10 at B1.5 for luminosity class III-V stars appears to be an especially useful criterion for the temperature classification of stars in this spectral range.

Henize, K. G.↗
NASA NTRS1982

IUE observations of Si and C lines and comparison with non-LTE models

Classical model atmosphere techniques are applied to analyze IUE spectra, and to determine abundances, effective temperatures and gravities. Measurements of the equivalent widths and other properties of the line profiles of 24 photospheric lines of Si II, Si III, Si IV, C II, C III and C IV are presented in the range of 1175-1725 A for seven B and two O stars. Observed line profiles are compared with theoretical profiles computed using non-LTE theory and models, and using line-blanketed model atmospheres. Agreement is reasonably good, although strong lines are calculated to be systematically stronger than those observed, while the reverse occurs for weak lines, and empirical profiles have smaller wings than theoretical profiles. It is concluded that the present theory of line formation when used with solar abundances, represents fairly well observed UV photospheric lines of silicon and carbon ions in the atmospheres of main sequence stars of types B5-O9.

Kamp, L. W.↗
NASA NTRS1982

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Yeh, Y. C. M.↗
NASA NTRS1986

Detection of (Si II) (34.8 micron) emission in Orion-KL - A measurement of the silicon abundance in dense interstellar gas

The first detection of the ground state fine structure transition of Si+ at a rest wavelength determined to be 34.815 + or - 0.004 micron are reported. These observations were obtained with the facility spectrometer on NASA's Kuiper Airborne Observatory. A 6' NW-SE strip scan across the Orion-KL region shows Si II emission from both the extended photodissociation region surrounding theta 1 Ori C and from the shocked gas NW of BN-KL. The inferred gas-phase silicon elemental abundance relative to hydrogen in the dense 10 to the 5/cc primarily neutral photodissociation region is approximately 2.6 x 10 the -6, a factor of 0.075 times the solar value and 3.4 times greater than the abundance in the moderate density aprox. 10 to the 3/cc cloud toward Zeta Oph The silicon abundance in the shocked gas is approximately solar, indicating that any pre-existing grains have been destroyed in the shock wave or that the preshock gas carries a near solar abundance of gas phase silicon. The shock-excited Si II (34.8 micron) emission may arise from shocked wind material in the outflow around IRc2, with wind velocities approx. 100 km/s.

Haas, M. R.↗
NASA NTRS1987

Improved beta-SiC heteroepitaxial films using off-axis Si substrates

All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Powell, J. A.↗
NASA NTRS1988

Molecular-beam epitaxy of CrSi2 on Si(111)

The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.

Fathauer, R. W.↗
NASA NTRS1988

C IV and Si IV in IUE spectra of normal B8-A0 stars: UV identified Be/Ae stars

Archival IUE high dispersion spectra of 42 B6-A2 stars within 200 pc were surveyed. Five of the program stars show significant C IV and Si IV absorption. All of the stars with detected C IV have v sin i less than or = 190 km/sec. Sharp absorption cores are present in Si II lambda 1533 in 3 of the objects, indicating that these are previously unrecognized shell stars. Three of the stars have variable or asymmetric C IV profiles which are consistent with the C IV and Si IV being produced in stellar winds. One star has C IV in the form of a shortward-shifted discrete absorption component, similar to those observed in Be stars. The data are compared with similar data for Be and B shell stars.

Chiu, Weihsueh A.↗
NASA NTRS1988

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

Kim, Jae-Hoon↗
NASA NTRS1988

Oscillator strengths for Si II

New accurate results are presented for absorption oscillator strengths of Si II resonance lines. In these ab initio calculations, an extensive basis set of 67 electronic configuration are employed, including fine-structure states and relativistic effects in the Breit-Pauli approximation. For the strong Si II lines, good agreement is found with previous LS-coupling f-values of Dufton et al. (1983). Oscillator strengths of selected weaker lines disagree in some cases with empirically determined f-values by Shull, Snow, and York (1981) and by Van Buren (1986). The theoretical results are combined with curve-of-growth analyses of Copernicus and IUE data to yield a list of recommended Si II oscillator strengths consistent with the errors in both theoretical and observational analyses. These f-values have been used (Van Steenberg and Shull) for a Galactic survey of interstellar silicon abundances with the International Ultraviolet Explorer satellite.

Luo, Ding↗
NASA NTRS1988

Undercooling studies on Nb-Pt and Nb-Si alloys using the 105 meter drop tube

Niobium-platinum samples of compositions ranging from 16 to 32 at. pct have been undercooled to as much as 540 K in the low gravity, containerless environment of a 105 meter drop tube. Undercooling was terminated in the Nb-Pt samples by the nucleation and growth of the Nb3Pt phase. In the 16-18 at. pct Pt samples, this resulted in samples which are completely Nb3Pt, in contrast to both the equilibrium phase diagram and the nonundercooled samples which formed with Nb dendrites and interdendritic Nb3Pt. Undercoolings for the Nb-Si samples were up to 670 K, which corresponds to 27 percent of the liquidus temperature or 80 percent of the estimated hypercooling limit. In the Nb-Si system, a coupled zone was identified as well as a metastable extension of the solubility limit of Si in Nb due to deep undercooling.

Robinson, M. B.↗
NASA NTRS1989

In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 C

This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.

Nieh, C. W.↗
NASA NTRS1989

Electron cyclotron resonance deposition of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Shing, Y. H.↗
NASA NTRS1990

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO2 system, with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (less than 0.1 rad(Si)/s) and very low dose rates (about 0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.

Goben, C. A.↗