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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

An RF dosimeter for independent SAR measurement in MRI scanners

Purpose: The monitoring and management of radio frequency (RF) exposure is critical for ensuring magnetic resonance imaging (MRI) safety. Commercial MRI scanners can overestimate specific absorption rates (SAR) and improperly restrict clinical MRI scans or the application of new MRI sequences, while underestimation of SAR can lead to tissue heating and thermal injury. Accurate scanner-independent RF dosimetry is essential for measuring actual exposure when SAR is critical for ensuring regulatory compliance and MRI safety, for establishing RF exposure while evaluating interventional leads and devices, and for routine MRI quality assessment by medical physicists. However, at present there are no scanner-independent SAR dosimeters. Methods: An SAR dosimeter with an RF transducer comprises two orthogonal, rectangular copper loops and a spherical MRI phantom. The transducer is placed in the magnet bore and calibrated to approximate the resistive loading of the scanner's whole-body birdcage RF coil for human subjects in Philips, GE and Siemens 3 tesla (3T) MRI scanners. The transducer loop reactances are adjusted to minimize interference with the transmit RF field (B{sub 1}) at the MRI frequency. Power from the RF transducer is sampled with a high dynamic range power monitor and recorded on a computer. The deposited power is calibrated and tested on eight different MRI scanners. Whole-body absorbed power vs weight and body mass index (BMI) is measured directly on 26 subjects. Results: A single linear calibration curve sufficed for RF dosimetry at 127.8 MHz on three different Philips and three GE 3T MRI scanners. An RF dosimeter operating at 123.2 MHz on two Siemens 3T scanners required a separate transducer and a slightly different calibration curve. Measurement accuracy was ∼3%. With the torso landmarked at the xiphoid, human adult whole‑body absorbed power varied approximately linearly with patient weight and BMI. This indicates that whole-body torso SAR is on average independent of the imaging subject, albeit with fluctuations. Conclusions: Our 3T RF dosimeter and transducers accurately measure RF exposure in body-equivalent loads and provide scanner-independent assessments of whole-body RF power deposition for establishing safety compliance useful for MRI sequence and device testing.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2026

Characterization of Electronic Stress-Induced Changes in Multilayer MoS 2

Transition metal dichalcogenides like molybdenum disulfide (MoS 2 ) are compelling for next-generation electronic devices. In this work, we investigate the impact of electronic stress on MoS 2 to illustrate that observational and phenomenological information on multiple devices can be useful to describe changes in the device, and caution against the rationalization of paltry results as representative or correlative to device behavior. Here, we stress MoS 2 by applying a sustained 20 V DC bias to study the material’s response. Post-stress electronic characterization revealed nonuniform shifts in current–voltage (I–V) behavior alongside microscale changes. Complementary mechanical, spectroscopic, and scanning microwave impedance measurements showed that stress-induced features locally modulate stiffness, surface potential, Raman intensity, and charge carrier density. We correlated I–V behavior with morphological features (wrinkles, tears, folds, height) and device-level geometry (MoS 2 overlap with electrodes, channel area, contact length) on 50 test structures across five chips to move beyond anecdotal conclusions. We found no universal correlations before DC stress. However, device-level geometry was correlated with I–V behavior after DC stress, suggesting that electrode contacts play a more dominant role than morphology in determining performance. Delamination and thinning induced by DC stress led to localized reductions in charge carrier density within the affected regions. Further, delamination and thinning appear to map to I–V device performance in a few samples, but the correlation is lost when a larger sample size is considered. This suggests significant sample-to-sample variability in surface electronic states of the test structures. We also discuss how environmental factors introduced during fabrication may contribute to the observed heterogeneous device response. Progress will require high-resolution, multimodal analysis across many samples constructed under controlled, clean conditions. By building data sets that capture variability, we can better identify the true drivers of performance.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interface-assisted molecular spintronics

Molecular spintronics, a field that utilizes the spin state of organic molecules to develop magneto-electronic devices, has shown an enormous scientific activity for more than a decade. But, in the last couple of years, new insights in understanding the fundamental phenomena of molecular interaction on magnetic surfaces, forming a hybrid interface, are presenting a new pathway for developing the subfield of interface-assisted molecular spintronics. The recent exploration of such hybrid interfaces involving carbon based aromatic molecules shows a significant excitement and promise over the previously studied single molecular magnets. In the above new scenario, hybridization of the molecular orbitals with the spin-polarized bands of the surface creates new interface states with unique electronic and magnetic character. This study opens up a molecular-genome initiative in designing new handles to functionalize the spin dependent electronic properties of the hybrid interface to construct spin-functional tailor-made devices. Through this article, we review this subject by presenting a fundamental understanding of the interface spin-chemistry and spin-physics by taking support of advanced computational and spectroscopy tools to investigate molecular spin responses with demonstration of new interface phenomena. Spin-polarized scanning tunneling spectroscopy is favorably considered to be an important tool to investigate these hybrid interfaces with intra-molecular spatial resolution. Finally, by addressing some of the recent findings, we propose novel device schemes towards building interface tailored molecular spintronic devices for applications in sensor, memory, and quantum computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Design of Atomically Precise Nanoscale Negative Differential Resistance Devices

Downscaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic–scale components. Here, negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons are investigated. The computational evaluation of the traditional double–barrier resonant–tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads while achieving high peak current. A new device structure consisting of multiple short segments that enables high current by the alignment of electronic levels across the segments while enlarging the tunneling distance between the leads is proposed. The proposed structure can be built with atomic precision using a scanning tunneling microscope (STM) tip during an intermediate stage in the synthesis of an armchair nanoribbon. An experimental evaluation of the band alignment at the interfaces and an STM image of the fabricated active part of the device are also presented. In conclusion, this combined theoretical–experimental approach opens a new avenue for the design of nanoscale devices with atomic precision.

42 ENGINEERING↗
DOE OSTI2018

Obtaining Iron-Oxide Films on Sapphire Substrates

Iron-oxide films on sapphire substrates were obtained using laser radiation with 1064-nm wavelength and studied by methods of scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission Mössbauer spectroscopy. The obtained Fe{sub 2}O{sub 3} films probably occur in a superparamagnetic state and may find application in gas sensors and various magnetic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Noble gas ion beams in materials science for future applications and devices

Helium ion microscopy (HIM), enabled by a gas field ion source (GFIS), is an emerging imaging and nanofabrication technique compatible with many applications in materials science. The scanning electron microscope (SEM) has become ubiquitous in materials science for high-resolution imaging of materials. However, due to the fundamental limitation in focusing of electron beams, ion-beam microscopy is now being developed (e.g., at 20 kV the SEM beam diameter ranges from 0.5 to 1 nm, whereas the HIM offers 0.35 nm). The key technological advantage of the HIM is in its multipurpose design that excels in a variety of disciplines. The HIM offers higher resolution than the best available SEMs as well as the traditional gallium liquid-metal ion source (LMISs) focused ion beams (FIBs), and is capable of imaging untreated biological or other insulating samples with unprecedented resolution, depth of field, materials contrast, and image quality. GFIS FIBs also offer a direct path to defect engineering via ion implantation, three-dimensional direct write using gaseous and liquid precursors, and chemical-imaging options with secondary ion mass spectrometry. HIM covers a wide range of tasks that otherwise would require multiple tools or specialized sample preparation. In this paper, we describe the underlying technology, present materials, relevant applications, and offer an outlook for the potential of FIB technology in processing materials.

2D materials↗
DOE OSTI2013

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Two-Dimensional Silk Crystal Films as Matrix Layer for High-Performance Microelectronics

This study explores a bio-inspired approach for memristive devices by combining Keggin-type polyoxometalates (POMs)-[SiW 12 O 40 ] 4 (POM-T) and [PW 12 O 40 ] 3 (POM-P), with silk fibroin (SF) to create 2D SF–POM layers on highly ordered pyrolytic graphite (HOPG) as resistive switching layers for memristors. We propose that the ordered SF layer template 0D POMs facilitate the formation of conductive filaments, thereby enhancing the variability of the manufactured memristors. AFM analysis revealed that both SF and SF–POM layers shared similar morphologies, while SF–POM–T formed larger aggregates, likely due to the stronger acidity of POM-T, which probably caused SF to aggregate and alter its secondary structure. Scanning Kelvin probe microscopy (SKPM) revealed that POMs reduced the contact potential difference of HOPG, resulting in lower work functions. Compared to an SF device, the SF–POM–P device showed improved memristive behavior, with a larger current gap and good repeatability over multiple sweeps; whereas the SF–POM–T device did not exhibit memristor activity, likely due to acidity-induced disruption of the SF template’s order and CF formation. More importantly, SF–POM–P devices also demonstrated programmable memristive states. Finally, combining simulation-driven memristor modeling, we showcase a co-design workflow for advancing bioinspired memristors through new materials design, synthesis, and device modeling and development.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase Transformations Driving Biaxial Stress Reduction During Wake-Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

Biaxial stress is identified to play an important role in the polar orthorhombic phase stability in hafnium oxide-based ferroelectric thin films. However, the stress state during various stages of wake-up has not yet been quantified. In this work, the stress evolution with field cycling in hafnium zirconium oxide capacitors is evaluated. The remanent polarization of a 20 nm thick hafnium zirconium oxide thin film increases from 9.80 to 15.0 µC cm –2 following 10 6 field cycles. This increase in remanent polarization is accompanied by a decrease in relative permittivity that indicates that a phase transformation has occurred. The presence of a phase transformation is supported by nano-Fourier transform infrared spectroscopy measurements and scanning transmission electron microscopy that show an increase in ferroelectric phase content following wake-up. The stress of individual devices field cycled between pristine and 10 6 cycles is quantified using the sin 2 (ψ) technique, and the biaxial stress is observed to decrease from 4.3 ± 0.2 to 3.2 ± 0.3 GPa. The decrease in stress is attributed, in part, to a phase transformation from the antipolar Pbca phase to the ferroelectric Pca2 1 phase. This work provides new insight into the mechanisms controlling and/or accompanying polarization wake-up in hafnium oxide-based ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2012

INFLUENCE OF FILM STRUCTURE AND LIGHT ON CHARGE TRAPPING AND DISSIPATION DYNAMICS IN SPUN-CAST ORGANIC THIN-FILM TRANSISTORS MEASURED BY SCANNING KELVIN PROBE MICROSCOPY

Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I{sub SD} during operation (V{sub G}=-40 V, V{sub SD}= -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Nanomanipulation and nanofabrication with multi-probe STM: From individual atoms to nanowires

The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

Qin, Shengyong↗
DOE OSTI2015

Tunability of exchange bias in Ni@NiO core-shell nanoparticles obtained by sequential layer deposition

Films of magnetic Ni@NiO core-shell nanoparticles (NPs, core diameter d congruent to 12 nm, nominal shell thickness variable between 0 and 6.5 nm) obtained with sequential layer deposition were investigated, to gain insight into the relationships between shell thickness/morphology, core-shell interface, and magnetic properties. Different values of NiO shell thickness t(s) could be obtained while keeping the Ni core size fixed, at variance with conventional oxidation procedures where the oxide shell is grown at the expense of the core. Chemical composition, morphology of the as-produced samples and structural features of the Ni/NiO interface were investigated with x-ray photoelectron spectroscopy and microscopy (scanning electron microscopy, transmission electron microscopy) techniques, and related with results from magnetic measurements obtained with a superconducting quantum interference device. The effect of the shell thickness on the magnetic properties could be studied. The exchange bias (EB) field H-bias is small and almost constant for t(s) up to 1.6 nm; then it rapidly grows, with no sign of saturation. This behavior is clearly related to the morphology of the top NiO layer, and is mostly due to the thickness dependence of the NiO anisotropy constant. The ability to tune the EB effect by varying the thickness of the last NiO layer represents a step towards the rational design and synthesis of core-shell NPs with desired magnetic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Property Variations in Modern REBCO Coated Conductors from Multiple Manufacturers

The complex, multilayer structure of REBCO Coated Conductor (CC) poses significant challenges in the fabrication of high magnetic field devices where large stresses may initiate various forms of damage. Our goal is to peer below the cartoon representations of CC so that, amongst other things, we might better understand whether a CC from one manufacturer is interchangeable with that from another. This involves knowledge of a broad range of electromagnetic, geometric, microstructural, and J c (θ,B,T) properties, and their variations that collectively pose challenges for the fault tolerance of REBCO CC devices. Accordingly, comparative measurements of J c , visualization of flux penetration with Magneto-Optical Imaging (MOI), tape geometry from Scanning Electron Microscopy (SEM) of polished cross-sections, and extensive optical microscopy was performed on recently purchased samples from multiple manufacturers. Our analyses reveal many deviations from or characteristics absent from manufacturers’ specifications, while a comparison of different manufacturers’ mechanically and laser slit tapes shows a diverse array of slitting characteristics amongst the manufacturers and variation in properties those made to the same specification. Laser slit tapes from several manufacturers reveal ablated edges with damaged regions extending up to 50 μm, comparable to the damaged region found in the mechanically slit CC of this study. Overall, the aim of this study is to flesh out appropriate ways to understand the real conductor below the manufacturers’ cartoons to avoid surprises in our REBCO CC coil development program. The goal of this work was to perform a broad array of characterizations of the type needed for validation of purpose for making high field magnets: to our surprise we found a wide range of properties which greatly impact the mechanical strength and electromagnetic performance of solenoids composed of these conductors and reinforced the need for a broad characterization program for each conductor prior to its implementation.

Bradford, G.↗
DOE OSTI2020

Competition between magnetic order and charge localization in Na 2 IrO 3 thin crystal devices thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na 2 IrO 3 ) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na 2 IrO 3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na 2 IrO 3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na 2 IrO 3 , as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na 2 IrO 3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Advancing Reel-to-Reel Inspection Techniques for Long HTS Conductors: Comparison and Innovations

The continuous advancement of high-temperature superconductor (HTS) technologies has greatly accelerated the development and deployment of HTS applications. Among the critical tools supporting these advancements are reel-to-reel (R2R) critical current (I c ) measurement techniques, which are extensively used by both manufacturers and end users to characterize long-length REBCO conductors. These techniques play a vital role in quality assurance and quality control (QA/QC), ensuring the reliability and performance of HTS conductors and applications throughout the production cycle. We have developed a range of in-house devices for R2R measurements at the University of Houston and Princeton Plasma Physics Laboratory. These include one-dimensional (1D) scan using a magnetic circuit (MC) and two-dimensional (2D) magnetic field mapping systems based on scanning probe array microscope (SPAM) or scanning probe microscopy (SPM). Each technique offers distinct advantages: the MC system provides ultra-fast scanning speeds, ideal for rapid inspection in large-scale industrial production; the high-resolution SPM delivers detailed insights for conductor research and development; and the SPAM, with its simpler mechanical setup, can be upgraded for higher field and lower temperature conditions with a balanced 2D resolution. Here we compared the magnetization and detection capabilities of these techniques through experiments on rare-earth barium copper oxide (REBCO) coated conductor samples, with data analysis supported by numerical simulations. Based on our comprehensive comparative studies, we propose enhancements for each measurement system and provide guidelines for selecting the optimal technique combinations to meet specific application requirements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Single Event Transients Induced by Picosecond Pulsed X-Ray Absorption in III-V Heterojunction Transistors

We perform measurements which show that focused, picosecond pulses of x-rays can be used to generate single event transients (SET) in a GaAs heterostructure field effect transistor (HFET) and a GaN high electron mobility transistor. X-ray pulses with photon energies of 8, 10 and 12 keV from the Advanced Photon Source at Argonne National Laboratory were used to excite transients. SETs are observed when x-ray pulses are incident upon metal layers above sensitive areas on the transistors. We use focused ion beam (FIB) cross-sectioning and scanning transmission electron microscopy energy dispersive x-ray spectroscopy (STEM-EDXS) to determine the compositional structure of the devices. We present a first order analysis of energy deposition in the devices and correlate it to the transient response to make preliminary interpretations of the results. We compare the x-ray transients from the GaAs HFET with transients generated by 750 nm and 870 nm femtosecond laser pulses. We also present results on the total dose susceptibility of the GaN HEMTs.

Cardoza, David M↗