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At least 541 records · Page 30

Enhanced photocatalytic performance in atomic layer deposition grown TiO{sub 2} thin films via hydrogen plasma treatment

The authors report the effect of hydrogen plasma treatment on TiO{sub 2} thin films grown by atomic layer deposition as an effective approach for modifying the photoanode materials in order to enhance their photoelectrochemical performance. Hydrogen plasma treated TiO{sub 2} thin films showed an improved absorption in the visible spectrum probably due to surface reduction. XPS analysis confirmed the formation of Ti{sup 3+} states upon plasma treatment. Hydrogen plasma treatment of TiO{sub 2} films enhanced the measured photocurrent densities by a factor of 8 (1 mA/cm{sup 2} at 0.8 V versus normal hydrogen electrode) when compared to untreated TiO{sub 2} (0.12 mA/cm{sup 2}). The enhancement in photocurrent is attributed to the formation of localized electronic states in mid band-gap region, which facilitate efficient separation and transportation of photo excited charge carriers in the UV region of electromagnetic spectrum.

36 MATERIALS SCIENCE↗

Spin photovoltaic effect in magnetic van der Waals heterostructures

The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics. Here, we report spin photovoltaic effects in vdW heterostructures of 2D magnet chromium triiodide (CrI 3 ) sandwiched by graphene contacts. The photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization–resolved absorption measurements reveal that these observations originate from magnetic order–coupled and, thus, helicity-dependent charge-transfer excitons. The photocurrent displays multiple plateaus as the magnetic field is swept, associated with different CrI 3 spin configurations. Giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photospintronics by engineering magnetic vdW heterostructures.

36 MATERIALS SCIENCE↗

Spectroscopy signatures of electron correlations in a trilayer graphene/hBN moiré superlattice

ABC-stacked trilayer graphene/hexagonal boron nitride moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. Here, we report spectroscopy measurements of dual-gated TLG/hBN using Fourier transform infrared photocurrent spectroscopy. We observed a strong optical transition between moiré minibands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single-particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 milli–electron volts, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

36 MATERIALS SCIENCE↗

Cation and Anion Channelrhodopsins: Sequence Motifs and Taxonomic Distribution

Cation and anion channelrhodopsins (CCRs and ACRs, respectively) primarily from two algal species, Chlamydomonas reinhardtii and Guillardia theta, have become widely used as optogenetic tools to control cell membrane potential with light. We mined algal and other protist polynucleotide sequencing projects and metagenomic samples to identify 75 channelrhodopsin homologs from four channelrhodopsin families, including one revealed in dinoflagellates in this study. We carried out electrophysiological analysis of 33 natural channelrhodopsin variants from different phylogenetic lineages and 10 metagenomic homologs in search of sequence determinants of ion selectivity, photocurrent desensitization, and spectral tuning in channelrhodopsins. Our results show that association of a reduced number of glutamates near the conductance path with anion selectivity depends on a wider protein context, because prasinophyte homologs with a glutamate pattern identical to that in cryptophyte ACRs are cation selective. Desensitization is also broadly context dependent, as in one branch of stramenopile ACRs and their metagenomic homologs, its extent roughly correlates with phylogenetic relationship of their sequences. Regarding spectral tuning, we identified two prasinophyte CCRs with red-shifted spectra to 585 nm. They exhibit a third residue pattern in their retinal-binding pockets distinctly different from those of the only two types of red-shifted channelrhodopsins known (i.e., the CCR Chrimson and RubyACRs). In cryptophyte ACRs we identified three specific residue positions in the retinal-binding pocket that define the wavelength of their spectral maxima. Lastly, we found that dinoflagellate rhodopsins with a TCP motif in the third transmembrane helix and a metagenomic homolog exhibit channel activity. Channelrhodopsins are widely used in neuroscience and cardiology as research tools and are considered prospective therapeutics, but their natural diversity and mechanisms remain poorly characterized. Genomic and metagenomic sequencing projects are producing an ever-increasing wealth of data, whereas biophysical characterization of the encoded proteins lags behind. In this study, we used manual and automated patch clamp recording of representative members of four channelrhodopsin families, including a family in dinoflagellates that we report in this study. Our results contribute to a better understanding of molecular determinants of ionic selectivity, photocurrent desensitization, and spectral tuning in channelrhodopsins.

59 BASIC BIOLOGICAL SCIENCES↗

Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

Spontaneous emission, optical loss, and gain spectra of a laser heterostructure with a quantum-well InGaAs active region have been studied at various optical and electrical pumping levels. It is shown that carrier accumulation in the active region under open-circuit conditions for the photocurrent leads to disappearance of the long-wavelength edge peak in the absorption spectrum. It is found that flowing photocurrent precludes accumulation of photogenerated carriers, with the result that the absorption spectrum retains its shape, irrespective of the optical pumping level. It is shown that many-particle effects of carrier interaction lead to a temperature-unrelated narrowing of the band gap in the InGaAs quantum-well active region by up to 30 meV and to tailing of the long-wavelength edge of the gain spectrum. As a result, a spectral range can be found for mesa-stripe laser diodes in which the gain in the region under the stripe contact is positive and the loss in passive regions is close to zero.

36 MATERIALS SCIENCE↗

Electronic states on silicon surface after deposition and annealing of SiO{sub x} films

The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiO{sub x} interface and the changes in the electronic states after the film annealing. It is found that the energy bands are bent at the Si-SiO{sub x} interface and the Si surface is enriched in electrons. In equilibrium the photocurrent peak at 1.1 eV is due to the band-to-band transitions in the silicon part of the interface. Annealing shifts the peak to higher energies; this shift increases with an increase in the annealing temperature from 650 to 1000 Degree-Sign C. This effect is accompanied by a decrease in the photocurrent at {<=}1.1 eV and weakening of the band-edge photoluminescence near the Si surface. The changes revealed are explained by the formation of an oxide layer with Si nanoclusters at the Si-SiO{sub x} interface upon annealing. This process is caused by oxygen diffusion from the SiO{sub x} film, which occurs mainly via defects on the Si wafer surface. The photoconductivity spectrum of the samples charged by short-term application of a negative potential to silicon exhibits electronic transitions in the SiO{sub x} film, both from the matrix electronic states and from the states of the defects and Si nanoclusters in the film.

36 MATERIALS SCIENCE↗

Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

Test photodiodes in the form of mesa structures with different areas from 30 Multiplication-Sign 30 to 100 Multiplication-Sign 100 {mu}m in size are fabricated based on a Cd{sub x}Hg{sub 1-x}Te/Si structure at x = 0.235, grown by molecular-beam epitaxy (MBE). The current-voltage characteristics of the diodes are measured in the dark and under background light conditions. The experimental results are compared with theoretical calculations. It is found that the dependence of the photodiode photocurrent and dark current on the mesa structure size appears in the mesa size ranges from 30 Multiplication-Sign 30 to 80 Multiplication-Sign 80 {mu}m. The dark current decreases and the photocurrent increases with decreasing mesa size. The mechanisms affecting the behavior of current-voltage characteristics are discussed.

36 MATERIALS SCIENCE↗

High Quantum Yield Sensitization of Single Crystal TiO 2 Electrodes with CsPbBr 3 Nanocrystals

Lead halide perovskites are promising materials for solar cells and photodetectors. Nanocrystals of this family of perovskites also have distinct properties. In this study we report the attainment of high quantum yield sensitized photocurrents from stabilized CsPbBr 3 perovskite nanocrystals thermally evaporated onto doped single crystal rutile (110) TiO 2 electrodes. Sensitized photocurrent stabilization was achieved by capping the nanocrystals with a thin NiO x layer and a Au carrier transport and protection layers respectively as well as the judicious choice of solvent and electrolyte.

Materials Science↗

Effects of Spectral Error in Efficiency Measurements of GaInAs-Based Concentrator Solar Cells

This technical report documents a particular error in efficiency measurements of triple-absorber concentrator solar cells caused by incorrect spectral irradiance -- specifically, one that occurs when the irradiance from unfiltered, pulsed xenon solar simulators into the GaInAs bottom subcell is too high. For cells designed so that the light-generated photocurrents in the three subcells are nearly equal, this condition can cause a large increase in the measured fill factor, which, in turn, causes a significant artificial increase in the efficiency. The error is readily apparent when the data under concentration are compared to measurements with correctly balanced photocurrents, and manifests itself as discontinuities in plots of fill factor and efficiency versus concentration ratio. In this work, we simulate the magnitudes and effects of this error with a device-level model of two concentrator cell designs, and demonstrate how a new Spectrolab, Inc., Model 460 Tunable-High Intensity Pulsed Solar Simulator (T-HIPSS) can mitigate the error.

14 SOLAR ENERGY↗

Functionalizing Oxide Surfaces with Molecular Assemblies

In the research funded by this research grant, a series of key areas were explored. 1. Molecular Self-Assembled p/n Junctions for Solar Fuel Generation. 2. Functionalized Chromophore Assemblies for Dye-Sensitized Photoelectrosynthesis Cells with applications based on perylene diimides for water splitting in photocathode applications and in molecularly modified quantum dots. 3. Highly conjugated supramolecular chromophores in sensitized photoanodes for water reduction and excitation dependent photocurrent switching. 4. Electropolymerized molecular assemblies for Dye Sensitized Photoelectrosynthesis Cells, in excitation-energy dependent photocurrent switching, and a stable molecular photocathode for solar-driven CO 2 reduction. 5. Electropolymerized molecular assemblies for solar CO 2 reduction and water oxidation and preparing stable surface structures by silane and click chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

helioLuna: Prospect for cislunar spacecraft and near-earth asteroid detection using heliostat fields at night

We experimentally and computationally investigate a proposed frequency-domain method for detecting and tracking cislunar spacecraft and near-earth asteroids using heliostat fields at night. Unlike imaging, which detects spacecraft and asteroids by their streak in sidereally-fixed long-exposure photographs, our proposed detection method oscillates the orientation of heliostats concentrating light from the stellar field and measures the light’s photocurrent power spectrum at sub-milliHertz resolution. If heliostat oscillation traces out an ellipse fixed in the galactic coordinate system, spacecraft or asteroids produce a peak in photocurrent power spectrum at a frequency slightly shifted from the starlight peak. The frequency shift is on the scale of milliHertz and proportional to apparent angular rate relative to sidereal. Relative phase corresponds to relative angular position, enabling tracking. A potential advantage of this frequency-domain method over imaging is that detectivity improves with apparent angular rate and number of heliostats. Since heliostats are inexpensive compared to an astronomical observatory and otherwise unused at night, the proposed method may cost-effectively augment observatory systems such as NASA’s Asteroid Terrestrial-impact Last Alert System (ATLAS).

79 ASTRONOMY AND ASTROPHYSICS↗

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

2D materials↗

Photocapacitance effects at a Cu2S-CdS heterojunction.

The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.

Lindquist, P. F.↗

Laser scanned image sensors using photoconductors with deep traps

Photoconductor records image when holes and electrons are trapped inside it due to incident photons. Image can be read out by exposing photoconductor to scanning laser beam. Photons from scanning laser empty traps, generating photocurrent. Image information is obtained by detecting this photocurrent synchronously with laser scan.

Maserjian, J.↗

Glass-Si heterojunction solar cells

Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

Anderson, R. L.↗

Basic corrections to predictions of solar cell performance required by nonlinearities

The superposition principle is used to derive the approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. The derivation requires the linearity of the boundary value problems that underlie the electrical characteristics. The shifting approximation is invalid if considerable photocurrent and considerable dark current both occur within the junction space-charge region; it is invalid also if sizable series resistance is present or if high-injection concentrations of holes and electrons exist within the quasi-neutral regions.

Lindholm, F. A.↗

Squeezed photon-number noise and sub-Poissonian electrical partition noise in a semiconductor laser

Amplitude noise on the light from a semiconductor laser produced a photocurrent fluctuation spectrum that was a maximum of 85 percent (-8.3 dB) below the shot-noise limit. Squeezing in semiconductor lasers is not limited by the overall quantum, or current transfer, efficiency from the laser injection current to the detector photocurrent. Current leakage away from the lasing junction does not introduce Poissonian partition noise.

Richardson, W. H.↗

Estimating Random Errors Due to Shot Noise in Backscatter Lidar Observations

In this paper, we discuss the estimation of random errors due to shot noise in backscatter lidar observations that use either photomultiplier tube (PMT) or avalanche photodiode (APD) detectors. The statistical characteristics of photodetection are reviewed, and photon count distributions of solar background signals and laser backscatter signals are examined using airborne lidar observations at 532 nm using a photon-counting mode APD. Both distributions appear to be Poisson, indicating that the arrival at the photodetector of photons for these signals is a Poisson stochastic process. For Poisson-distributed signals, a proportional, one-to-one relationship is known to exist between the mean of a distribution and its variance. Although the multiplied photocurrent no longer follows a strict Poisson distribution in analog-mode APD and PMT detectors, the proportionality still exists between the mean and the variance of the multiplied photocurrent. We make use of this relationship by introducing the noise scale factor (NSF), which quantifies the constant of proportionality that exists between the root-mean-square of the random noise in a measurement and the square root of the mean signal. Using the NSF to estimate random errors in lidar measurements due to shot noise provides a significant advantage over the conventional error estimation techniques, in that with the NSF uncertainties can be reliably calculated from/for a single data sample. Methods for evaluating the NSF are presented. Algorithms to compute the NSF are developed for the Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observations (CALIPSO) lidar and tested using data from the Lidar In-space Technology Experiment (LITE). OCIS Codes:

Liu, Zhaoyan↗