Helicity-Preserving Metasurfaces for Magneto-Optical Enhancement in Ferromagnetic [Pt/Co] N Films
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Materials Science↗
SEARCH · Engineering Papers
Results for “Optical devices”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Characterization of a SiPM-based monolithic neutron scatter camera using dark counts
The Single Volume Scatter Camera (SVSC) Collaboration aims to develop portable neutron imaging systems for a variety of applications in nuclear non-proliferation. Conventional double-scatter neutron imagers are composed of several separate detector volumes organized in at least two planes. A neutron must scatter in two of these detector volumes for its initial trajectory to be reconstructed. As such, these systems typically have a large footprint and poor geometric efficiency. We report on the design and characterization of a prototype monolithic neutron scatter camera that is intended to significantly improve upon the geometrical shortcomings of conventional neutron cameras. The detector consists of a 50 mm×56 mm× 60 mm monolithic block of EJ-204 plastic scintillator instrumented on two faces with arrays of 64 Hamamatsu S13360-6075PE silicon photomultipliers (SiPMs). The electronic crosstalk is limited to < 5% between adjacent channels and < 0.1% between all other channel pairs. SiPMs introduce a significantly elevated dark count rate over PMTs, as well as correlated noise from after-pulsing and optical crosstalk. In this article, we characterize the dark count rate and optical crosstalk and present a modified event reconstruction likelihood function that accounts for them. We find that the average dark count rate per SiPM is 4.3 MHz with a standard deviation of 1.5 MHz among devices. The analysis method we employ to measure internal optical crosstalk also naturally yields the mean and width of the single-electron pulse height. Here, we calculate separate contributions to the width of the single-electron pulse-height from electronic noise and avalanche fluctuations. We demonstrate a timing resolution for a single-photon pulse to be (128 ± 4) ps. Finally, coincidence analysis is employed to measure external (pixel-to-pixel) optical crosstalk. We present a map of the average external crosstalk probability between 2×4 groups of SiPMs, as well as the in-situ timing characteristics extracted from the coincidence analysis. Further work is needed to characterize the performance of the camera at reconstructing single- and double-site interactions, as well as image reconstruction.
47 OTHER INSTRUMENTATION↗
Equalization of Intensity-Modulated Fiber-Optic Voltage Sensors for Power Distribution Systems
We test fiber-optic voltage sensors based on optical reflection from a piezoelectric transducer. Our specific devices possess a 2 kHz fundamental resonance, and we verify a readily usable frequency band from approximately 10 Hz to 3 kHz, with a dynamic range of 60 dB for a detection system integrating over this entire band. Additionally, we demonstrate a digital signal processing approach to equalize the measured frequency response, enabling accurate retrieval of short-pulse inputs. These results suggest the value and applicability of intensity-modulated fiber-optic voltage sensors for measuring both steady-state waveforms and broadband transients which, coupled with the straightforward and compact design of the sensors, should make them effective tools in electric grid monitoring.
42 ENGINEERING↗
Laser absorptivity measurement device
A laser absorptivity measurement device uses a linearly polarized incident beam, an optical configuration comprising an internal polarizing beamsplitter that transmits the linearly polarized incident beam and a quarter-wave plate that converts linearly polarized incident beam into a circularly polarized incident beam that is reflected off a processing substrate. The quarter-wave plate and polarizing beamsplitter can then direct the reflected light back into an integrating volume, where the power of the reflected light can be measured by a photodetector. The laser absorptivity measurement device is capable of making real-time absorption efficiency measurements of a variety of laser-based processes, including laser welding and brazing, additive manufacturing, and laser marking.
Tung, Daniel↗
Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation
Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.
Wong, Matthew S.↗
Ultrafast vibrational control of organohalide perovskite optoelectronic devices using vibrationally promoted electronic resonance
Vibrational control (VC) of photochemistry through the optical stimulation of structural dynamics is a nascent concept only recently demonstrated for model molecules in solution. Extending VC to state-of-the-art materials may lead to new applications and improved performance for optoelectronic devices. Metal halide perovskites are promising targets for VC due to their mechanical softness and the rich array of vibrational motions of both their inorganic and organic sublattices. Here, we demonstrate the ultrafast VC of FAPbBr 3 perovskite solar cells via intramolecular vibrations of the formamidinium cation using spectroscopic techniques based on vibrationally promoted electronic resonance. The observed short (~300 fs) time window of VC highlights the fast dynamics of coupling between the cation and inorganic sublattice. First-principles modelling reveals that this coupling is mediated by hydrogen bonds that modulate both lead halide lattice and electronic states. Cation dynamics modulating this coupling may suppress non-radiative recombination in perovskites, leading to photovoltaics with reduced voltage losses.
36 MATERIALS SCIENCE↗
Field test of continuous-variable quantum key distribution with a true local oscillator
A continuous-variable quantum key distribution (CV QKD) using a true local (located at the receiver) oscillator (LO) has been proposed to remove any possibility of side-channel attacks associated with transmission of the LO as well as reduce the cross-pulse contamination. Here we report an implementation of true LO-CV QKD using “off-the-shelf” components and conduct QKD experiments using the fiber optical network at Oak Ridge National Laboratory. A phase reference and quantum signal are time multiplexed and then wavelength division multiplexed with the classical communications that “coexist” with each other on a single optical network fiber. Importantly, this is the first demonstration of CV QKD with a receiver-based true LO over a deployed fiber network, a crucial step for its application in real-world situations.
97 MATHEMATICS AND COMPUTING↗
Ten-valley excitonic complexes in charge-tunable monolayer WSe 2
Excitons dominate the optical response of two-dimensional (2D) semiconductors. Strong interactions produce peculiar excitonic complexes, which provide a testing ground for exciton and quantum many-body theories. Here, we report a hitherto unobserved many-body exciton that emerges upon filling both the K and Q valleys of WSe 2 . We optically probe the exciton landscape using charge-tunable devices with unusually thin dielectrics that facilitate doping up to several 10 13 cm −2 . We observe the emergence of the thermodynamically stable complex when 10 valleys are electrostatically filled. We gain insight into its physics using magneto-optical measurements. Our results are well-described by a model where the number of distinguishable Fermi seas interacting with the photoexcited electron-hole pair defines the complex’s behavior. In addition to expanding the repertoire of excitons in 2D semiconductors, this complex could probe the limit of exciton models and answer open questions about screened Coulomb interactions in 2D semiconductors.
M exciton↗
New application of hyperspectral imaging to steady-state plasma observations
A new application of hyperspectral imaging (HSI) to steady-state plasma emission observations is proposed because of its prominent feature: an HSI camera records a two-dimensional image, and each spatial pixel contains spectral data typically with more than a hundred bands, while conventional digital cameras have only three bands. The characterization of an HSI camera (Specim IQ) has been performed during steady-state plasma–material interaction experiments using the linear plasma device PISCES-A. By easily subtracting the background/continuum emission in contrast to conventional filter cameras, two-dimensional images of multiple emission lines at different wavelengths are simultaneously obtained during a single measurement, demonstrating the advantage in plasma emission observations.
47 OTHER INSTRUMENTATION↗
Microwave-optical quantum frequency conversion
Photons at microwave and optical frequencies are principal carriers for quantum information. While microwave photons can be effectively controlled at the local circuit level, optical photons can propagate over long distances. High-fidelity conversion between microwave and optical photons will allow the distribution of quantum states across different quantum technology nodes and enhance the scalability of hybrid quantum systems toward a future “Quantum Internet.” Despite a frequency difference of five orders of magnitude, there has been significant progress recently toward the transfer between microwave and optical photons with steadily improved efficiency in a coherent and bidirectional manner. In this review, we summarize this progress, emphasizing integrated device approaches, and provide a perspective for device implementation that enables quantum state transfer and entanglement distribution across microwave and optical domains.
74 ATOMIC AND MOLECULAR PHYSICS↗
Field programmable spin arrays for scalable quantum repeaters
The large scale control over thousands of quantum emitters desired by quantum network technology is limited by the power consumption and cross-talk inherent in current microwave techniques. Here we propose a quantum repeater architecture based on densely-packed diamond color centers (CCs) in a programmable electrode array, with quantum gates driven by electric or strain fields. This ‘field programmable spin array’ (FPSA) enables high-speed spin control of individual CCs with low cross-talk and power dissipation. Integrated in a slow-light waveguide for efficient optical coupling, the FPSA serves as a quantum interface for optically-mediated entanglement. We evaluate the performance of the FPSA architecture in comparison to a routing-tree design and show an increased entanglement generation rate scaling into the thousand-qubit regime. Our results enable high fidelity control of dense quantum emitter arrays for scalable networking.
42 ENGINEERING↗
Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. Here, this study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
36 MATERIALS SCIENCE↗
Optical leakage mitigation in ortho-mode transducer detectors for microwave applications
Ortho-mode transducers (OMT) are a commonly used method of coupling opti-cal signals between waveguides and on-chip circuitry and detectors. While the ideal OMT-waveguide coupling requires minimal disturbance to the waveguide, when used for mm-wave applications the waveguide is often slide though and the OMT probes inserted on a thin support membrane. This interface is a potential source of signal leakage and can lead to signal loss and experimental systematics (e.g. in CMB polarization experiments where lost signal can result in temperature to polarization leakage). Here we report on the development of new OMT- waveguide coupling structures with the goal of reducing leakage at the horn-to-detector-wafer interface. The pixel to pixel optical leakage due to the gap be-tween the coupling waveguide and the backshort is reduced by means of a protrusion that passes through the OMT membrane and connects the waveguide sections on each side of the wafer. High frequency electromagnetic simulations indicate that these protrusions can reduce optical leakage in the gap by ~80% percent, with a ~60% filling factor, respect to an ordinary OMT coupling without protrusion, using designs that are compatible with current fabrication processes. We describe the design of the new coupling structure including the impact of varying two key parameters: wafer to optical coupling gap and protrusion fill factor. Prototype devices have been designed that will characterize the performance of the new design using a relative measurement with varying filling factors. We describe the simulation setup and results, and present a chip layout and sample box designed to perform an initial measurement.
Detectors↗
Manufacturable Corrugated Substrates for High Efficiency Organic Light-Emitting Diodes (OLEDs)
In this project, we start with optical simulation of an OLED to have a basic understanding of the mode dispersion inside the device. We first fabricated 1-D photonic crystals’ (PhCs) for corrugated green OLED devices observed enhanced EQE from 20% to 27%, which has the drawbacks of angular color shift. To resolve this issue, we fabricated poly crystalline PhCs (poly PhC) devices and observed alleviated angular color shift. The outcoupling efficiency is enhanced from 30% to 35%, which can be further enhanced to 60% by extracting the substrate mode. To further enhance the efficiency, we used RCWA (rigorous coupled-wave analysis) simulation to study the optical property in the corrugated device. We found out the corrugation reduces the reflectance of the Al cathode, lowers the cavity resonance and weakens the cavity emission. To preserve the cavity effect, we insert a low index Teflon layer (n = 1.3) between the ITO anode and the corrugated substrate, which increased the index contrast and hence the reflectance of the bottom electrode. As a result, the corrugated OLED with a Teflon layer shows a maximum outcoupling efficiency of 75%.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Long-Range Exciton Diffusion in Two-Dimensional Assemblies of Cesium Lead Bromide Perovskite Nanocrystals
Förster resonant energy transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as an optoelectronic design element to transport energy. However, so far, nanocrystal (NC) systems supported only diffusion lengths of 30 nm, which are too small to be useful in devices. In this work, we demonstrate a FRET-mediated exciton diffusion length of 200 nm with 0.5 cm 2 /s diffusivity through an ordered, two-dimensional assembly of cesium lead bromide perovskite nanocrystals (CsPbBr 3 PNCs). Exciton diffusion was directly measured via steady-state and time-resolved photoluminescence (PL) microscopy, with physical modeling providing deeper insight into the transport process. This exceptionally efficient exciton transport is facilitated by PNCs' high PL quantum yield, large absorption cross section, and high polarizability, together with minimal energetic and geometric disorder of the assembly. This FRET-mediated exciton diffusion length matches perovskites' optical absorption depth, thus enabling the design of device architectures with improved performances and providing insight into the high conversion efficiencies of PNC-based optoelectronic devices.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Molecular Doping Increases the Semitransparent Photovoltaic Performance of Dilute Bulk Heterojunction Film with Discontinuous Polymer Donor Networks
The semitransparent and colorful properties of organic solar cells (OSCs) attract intensive academic interests due to their potential application in building integrated photovoltaics, wearable electronics, and so forth. The most straightforward and effective method to tune these optical properties is varying the componential ratio in the blend film. However, the increase in device transmittance inevitably sacrifices the photovoltaic performance because of severe carrier recombination that originates from discontinuous charge-transport networks in the blend film. In this work, a strategy is proposed via the molecular-doping strategy to overcome these shortcomings. It is discovered that p-doping is able to release the trapped holes in segregated polymer domains leading to short-circuit current enhancement, while n-doping is more effective to fill the bandgap states producing a higher fill factor. More importantly, either type of doping improves the photovoltaic performance in the semitransparent photovoltaic devices. These discoveries provide a new pathway to breaking the compromise between the photovoltaic performance and optical transmittance in semitransparent OSCs, and hold promise for their future commercialization.
14 SOLAR ENERGY↗
Method of making a photovoltaic device on a substrate at high speed with perovskite solution
A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.
Christensen, Scott Kenneth↗
3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device
Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.
Wood, Alexander A.↗