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Low noise and linearity of charge-coupled devices (CCD's) combined with optical waveguide components in hybrid, integrated chip package. Concept used to measure laser flux in fiber-gyro application using sensing fibers that range from several to several tens of kilometers in length. Potential applications include optical delay measurement and linear detector of light flux emanating from fiber-optic waveguides.
Traditional azimuth-elevation ("az-el") stages are used to point a variety of devices ranging from large optical telescopes to tank guns. Such a stage typically has an elevation stage having a horizontal axis mounted on an azimuth stage with a vertical axis. Both stages are often motorized. Optical communications transceivers often require two-axis motorized control, as when the communications link is between a ground station and an aircraft or satellite. In such applications, the traditional azimuth-elevation stage has two important drawbacks: a gimbal lock exclusion zone at zenith and susceptibility to pointing errors caused by backlash. Az-el stages in which the azimuth stage cannot rotate a full 360deg have the additional drawback of an azimuth exclusion zone. The diagonal-axes stage described here mitigates or eliminates all of these problems. Instead of one vertical axis and one horizontal axis, a diagonal-axes stage has two horizontal axes, both oriented at 45 to the trajectory of the target. For example, a ground station located on the equator tracking a satellite with an equatorial orbit would have one axis parallel to northeast and southwest, and the other axis parallel to northwest and southeast. The diagonal-axes stage is considerably less vulnerable to backlash. If it is correctly oriented, its axes rotate in only one direction during an overhead pass by a satellite. As a result, the effects of backlash may be inherently eliminated. If the gravity-induced torque on either axis changes during the pass, then backlash may become important during the part of the pass where the gravity torque, instead of opposing the motion of the stage, pushes the stage in the direction of motion. This can result in the loss of gear-to-gear contact in one or more stages of the gear reduction mechanism. In this case, a preload spring used to eliminate backlash need only be sufficiently strong to overcome the gravity torque, i.e. it need not overcome friction in the gear train. The diagonal-axes stage is not backlash-free for arbitrary target trajectories such as an aircraft might execute. If properly oriented for any particular satellite, however, it is backlash-free for all passes of that satellite, which will trace out parallel paths on the sky, and for all passes of any other satellite that are perpendicular to the first. It will also be backlash-free for some fraction of other satellite trajectories.
The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.
Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.
An improved method of measuring chromatic dispersion in an optical fiber or other device affords a lower (relative to prior such methods) limit of measurable dispersion. This method is a modified version of the amplitude-modulation (AM) method, which is one of the prior methods. In comparison with the other prior methods, the AM method is less complex. However, the AM method is limited to dispersion levels . 160 ps/nm and cannot be used to measure the symbol of the dispersion. In contrast, the present modified version of the AM method can be used to measure the symbol of the symbol of the dispersion and affords a measurement range from about 2 ps/nm to several thousand ps/nm with a resolution of 0.27 ps/nm or finer. The figure schematically depicts the measurement apparatus. The source of light for the measurement is a laser, the wavelength of which is monitored by an optical spectrum analyzer. A light-component analyzer amplitude-modulates the light with a scanning radio-frequency signal. The modulated light is passed through a buffer (described below) and through the device under test (e.g., an optical fiber, the dispersion of which one seeks to measure), then back to the light-component analyzer for spectrum analysis. Dispersion in the device under test gives rise to phase shifts among the carrier and the upper and lower sideband components of the modulated signal. These phase shifts affect the modulation-frequency component of the output of a photodetector exposed to the signal that emerges from the device under test. One of the effects is that this component goes to zero periodically as the modulation frequency is varied.
As a precursor to the construction of a 16-channel device, a 3-channel integrated optical data preprocessor has been fabricated and tested. The device, which is fabricated in an outdiffused LiNbO3 waveguide, provides a signal related to the channel-by-channel difference between a prerecorded reference set and an incoming data set which is presented in the form of parallel analog voltages. The data are impressed upon the guided wave as a set of electrooptically induced phase shifts, and the comparison to the reference set is performed by holographic subtraction. The reference set can either be introduced as a separate operation or it can be 'learned' by the preprocessor during operation.
New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.
With submillimeter size and optical Q up to approximately 10 (exp 10), microspheres with whispering-gallery (WG) modes are attractive new component for fiber-optics/photonics applications and a potential core in ultra-compact high-spectral-purity optical and microwave oscillators. In addition to earlier demonstrated optical locking of diode laser to WG mode in a microsphere, we report on microsphere application in the microwave optoelectronic oscillator, OEO. In OEO, a steady-state microwave modulation of optical carrier is obtained in a closed loop including electro-optical modulator, fiber-optic delay, detector and microwave amplifier. OEO demonstrates exceptionally low phase noise (-140 dBc/Hz at l0kHz from approximately 10GHz carrier) with a fiber length approximately 2km. Current technology allows to put all parts of the OEO, except the fiber, on the same chip. Microspheres, with their demonstrated Q equivalent to a kilometer fiber storage, can replace fiber delays in a truly integrated device. We have obtained microwave oscillation in microsphere-based OEO at 5 to 18 GHz, with 1310nm and 1550nm optical carrier, in two configurations: 1) with external DFB pump laser, and 2) with a ring laser including microsphere and a fiber optic amplifier. Also reported is a simple and efficient fiber coupler for microspheres facilitating their integration with existing fiber optics devices.
Document fraud including unauthorized duplication of identification cards and credit cards is a serious problem facing the government, banks, businesses, and consumers. In addition, counterfeit products such as computer chips, and compact discs, are arriving on our shores in great numbers. With the rapid advances in computers, CCD technology, image processing hardware and software, printers, scanners, and copiers, it is becoming increasingly easy to reproduce pictures, logos, symbols, paper currency, or patterns. These problems have stimulated an interest in research, development and publications in security technology. Some ID cards, credit cards and passports currently use holograms as a security measure to thwart copying. The holograms are inspected by the human eye. In theory, the hologram cannot be reproduced by an unauthorized person using commercially-available optical components; in practice, however, technology has advanced to the point where the holographic image can be acquired from a credit card-photographed or captured with by a CCD camera-and a new hologram synthesized using commercially-available optical components or hologram-producing equipment. Therefore, a pattern that can be read by a conventional light source and a CCD camera can be reproduced. An optical security and anti-copying device that provides significant security improvements over existing security technology was demonstrated. The system can be applied for security verification of credit cards, passports, and other IDs so that they cannot easily be reproduced. We have used a new scheme of complex phase/amplitude patterns that cannot be seen and cannot be copied by an intensity-sensitive detector such as a CCD camera. A random phase mask is bonded to a primary identification pattern which could also be phase encoded. The pattern could be a fingerprint, a picture of a face, or a signature. The proposed optical processing device is designed to identify both the random phase mask and the primary pattern [1-3]. We have demonstrated experimentally an optical processor for security verification of objects, products, and persons. This demonstration is very important to encourage industries to consider the proposed system for research and development.
For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.
Laser-activated microwave semiconductor device switches at microwave speeds, generates pulses, or detects optical pulses with fast response. Device consists essentially of back-to-back metal/thin oxide/silicon (MTOS) capacitors on silicon chip.
Microwave signals modulate optical signals in unit integrable with GaAs and GaAIAs devices. Experimental GaAIAs electro-optical modulators designed and built for operation at wavelength of 0.82 micrometers. Easily integrable with GaAs monolithic microwave integrated circuits. Integrated optical and microwave waveguides in electro-optical materials constitute traveling-wave electro-optical modulator in configuration of Mach-Zehnder interferometer. Because characteristic impedance of waveguide 50 ohms - standard value - no impedance-matching network required.
A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.
The fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.
As data communications rates climb toward 10 Gbits/s, clock recovery and synchronization become more difficult, if not impossible, using conventional electronic circuits. The high-speed photonic clock regenerator described in this article may be more suitable for such use. This photonic regenerator is based on a previously reported photonic oscillator capable of fast acquisition and synchronization. With both electrical and optical clock inputs and outputs, the device is easily interfaced with fiber-optic systems. The recovered electrical clock can be used locally and the optical clock can be used anywhere within a several kilometer radius of the clock/carrier regenerator.
This paper has five purposes. First, to focus upon the key relationships that bound the technology choices for large, archival, digital storage devices; second, to identify the motivations for selecting the optical technology for a petabit-exabit level storage system (10 to the 15th to 10 to the 18th bits); third, to present a generic example and a specific implementation of a terabit-level optical storage device; fourth, to characterize the global design space constraints that will allow one to build a technology-limited optical store; and fifth, to sketch the outline of the BYTERON concept, a wideband 10 to the 16th to 10 to the 17th bit optical store concept and contrast its performance to that of an optical store that is in operation today
Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.