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540 records · Page 30

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Organic-semiconducting hybrid solar cell

The embodiment of this invention lies on experimental evidence of photoconductivity activity of a hybrid solar cell, organic/chalcogenide. The device is made of thin layers of conductive indium-tin-oxide (ITO) on glass with a 100 nm layer of chalcogenide molybdenum di-sulfide (MoS 2 ) and a thin layer of about ˜50 nm of complex organic compound assembled at room temperature. The device was tested to conventional electrical transport measurements in the regime of −1V to 1V under electromagnetic radiation simulator at 100 mW/cm 2 . Results indicate solar conversion efficiency of 2.48% and current density of 6.35 mA/cm 2 .

14 SOLAR ENERGY↗

Superlubrious high temperature coatings

A low friction wear surface operable at high temperatures and high loads with a coefficient of friction in the superlubric regime including MoS 2 and graphene-oxide on the wear surface is provided, and methods of producing the low friction wear surface are also provided. The low friction wear surface remains with a coefficient of friction in the superlubric regime at temperatures in between about 200° C. and 400° C.

Sumant, Anirudha V.↗

Sensitivity/Uncertainty Comparison Study Involving IRSN, LANL, and ORNL Tools to Support Validation

Under a DOE Nuclear Criticality Safety Program (NCSP) task involving Analytical Methods, three Laboratories collaborated in a comparison of results obtained from Sensitivity/Uncertainty (S/U) packages relevant to validation of transport codes. The task involves Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Los Alamos National Laboratory (LANL), and Oak Ridge National Laboratory (ORNL) comparing results of MORET 5/MACSENS V3.0, MCNP6.2/Whisper-1.1, and SCALE 6.2.3/TSUNAMI/USLSTATS respectively. All Monte Carlo transport code results utilize nuclear data from ENDF/B-VII.1 evaluation. This study examines five cases from the International Handbook of Evaluated Criticality Safety Benchmark Experiments (ICSBEP Handbook) selected as application models: IEU-MET- FAST-002-001, LEU-COMP-THERM-001-001, LEU-SOL-THERM-004-001, MIX-COMP- THERM-001-001, and U233-SOL-THERM-001-001. This is a continuation of a previous study to examine Pu and HEU cases: HEU-MET-FAST-013-001, HEU-SOL-THERM-001-008, PU-MET- FAST-022-001, and PU-SOL-THERM-001-001. Ultimately, comparison is made between Upper Subcritical Limits (USLs) obtained using each code package for each application case. Since differences exist in whether packages take into account margin of subcriticality (MOS), the USL is computed using only bias and bias uncertainty, also known as the calculational margin (CM) in ANSI/ANS-8.24. Results comparison appears to show that benchmark selection has a greater influence on the USL than the method used for calculation of bias and bias uncertainty.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Self-contained, automated, long-term sensor system for monitoring of soil and water nutrients in fields

An automated, fieldable ion-selective sensor system for frequent detection of nutrients in soils or water is set forth. In one aspect, an integrated small form-factor housing includes a battery, processor, a fluid manipulation unit and reservoirs, and a chemical species detection cell. A flow-through sampling head can be connected to the detection cell and a waste reservoir by flexible tubing sealingly connected at opposite ends of the tube. In one aspect, improved performance of the ion-selective sensor includes adding an ion-to-electron transfer interlayer between an ion-selective membrane and its working electrode. In one aspect, the sensor is solid-state and uses printed polymeric composite of POT-MoS$_{2}$. The use of a porous tube for a sampling head and fluid connection at opposite ends allows not only fluid to be removed from the head to the detection cell for measurement but also flow in an opposite direction and out to a waste reservoir to clean and reset for a next sample measurement.

60 APPLIED LIFE SCIENCES↗

Coupling a recurrent neural network to SPAD TCSPC systems for real-time fluorescence lifetime imaging

Fluorescence lifetime imaging (FLI) has been receiving increased attention in recent years as a powerful diagnostic technique in biological and medical research. However, existing FLI systems often suffer from a tradeoff between processing speed, accuracy, and robustness. Inspired by the concept of Edge Artificial Intelligence (Edge AI), we propose a robust approach that enables fast FLI with no degradation of accuracy. This approach couples a recurrent neural network (RNN), which is trained to estimate the fluorescence lifetime directly from raw timestamps without building histograms, to SPAD TCSPC systems, thereby drastically reducing transfer data volumes and hardware resource utilization, and enabling real-time FLI acquisition. We train two variants of the RNN on a synthetic dataset and compare the results to those obtained using center-of-mass method (CMM) and least squares fitting (LS fitting). Results demonstrate that two RNN variants, gated recurrent unit (GRU) and long short-term memory (LSTM), are comparable to CMM and LS fitting in terms of accuracy, while outperforming them in the presence of background noise by a large margin. To explore the ultimate limits of the approach, we derive the Cramer-Rao lower bound of the measurement, showing that RNN yields lifetime estimations with near-optimal precision. To demonstrate real-time operation, we build a FLI microscope based on an existing SPAD TCSPC system comprising a 32 x 32 SPAD sensor named Piccolo. Four quantized GRU cores, capable of processing up to 4 million photons per second, are deployed on the Xilinx Kintex-7 FPGA that controls the Piccolo. Powered by the GRU, the FLI setup can retrieve real-time fluorescence lifetime images at up to 10 frames per second. The proposed FLI system is promising and ideally suited for biomedical applications, including biological imaging, biomedical diagnostics, and fluorescence-assisted surgery, etc.

47 OTHER INSTRUMENTATION↗

Tunneling electroresistance effects in epitaxial complex oxides on silicon

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO 3 /PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×10 5 %) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

36 MATERIALS SCIENCE↗

Billion-pixel x-ray camera (BiPC-X)

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Design of the high-yield time-gated x-ray hot-spot imager for OMEGA

Time-resolved x-ray self-emission imaging of hot spots in inertial confinement fusion experiments along several lines of sight provides critical information on the pressure and the transient morphology of the hot spot on the University of Rochester’s OMEGA Laser System. At least three quasi-orthogonal lines of sight are required to infer the tomographic information of the hot spots of deuterium–tritium cryogenic layered implosions. OMEGA currently has two time-gated x-ray hot-spot imagers: the time-resolved Kirkpatrick–Baez x-ray microscope and the single-line-of-sight, time-resolved x-ray imager (SLOS-TRXI). The time-gated x-ray hot-spot imager (XRHSI) is being developed for use on OMEGA as the third line of sight for the high-yield operation of up to 4 × 10 14 neutrons. XRHSI follows the SLOS-TRXI concept; however, it will have improved spatial and temporal resolutions of 5 μm and 20 ps, respectively. The simultaneous operation of the three instruments will provide 3-D reconstructions of the assembled hot-spot fuel at various times through peak thermonuclear output. The technical approach consists of a pinhole array imager and demagnifying time-dilation drift tube that are coupled to two side-by-side hybrid complementary metal–oxide semiconductor (hCMOS) image sensors. To minimize the background and to harden the diagnostics, an angled drift-tube assembly shifting the hCMOS sensors out of the direct line of sight and neutron shielding will be applied. As a result, the technical design space for the instrument will be discussed and the conceptual design will be presented.

47 OTHER INSTRUMENTATION↗

Compact high repetition rate Thomson parabola ion spectrometer

Here, we present the development of a compact Thomson parabola ion spectrometer capable of characterizing the energy spectra of various ion species of multi-MeV ion beams from >10 20 W/cm 2 laser produced plasmas at rates commensurate with the highest available from any of the current and near-future PW-class laser facilities. This diagnostic makes use of a polyvinyl toluene based fast plastic scintillator (EJ-260), and the emitted light is collected using an optical imaging system coupled to a thermoelectrically cooled scientific complementary metal–oxide–semiconductor camera. This offers a robust solution for data acquisition at a high repetition rate, while avoiding the added complications and nonlinearities of micro-channel plate based systems. Different ion energy ranges can be probed using a modular magnet setup, a variable electric field, and a varying drift-distance. We have demonstrated operation and data collection with this system at up to 0.2 Hz from plasmas created by irradiating a solid target, limited only by the targeting system. With the appropriate software, on-the-fly ion spectral analysis will be possible, enabling real-time experimental control at multi-Hz repetition rates.

47 OTHER INSTRUMENTATION↗

Electron pulse-dilation diagnostic instruments

During the past decade, a number of diagnostic instruments have been developed that utilize electron pulse-dilation to achieve temporal resolution in the 5–30 ps range. These development efforts were motivated by the need for advanced diagnostics for high-energy density physics experiments around the world. The new instruments include single- and multi-frame gated imagers and non-imaging detectors that record continuous data streams. Electron pulse-dilation provides high-speed detection capability by converting incoming signals into a free electron cloud and manipulating the electron signal with electric and magnetic fields. In this paper we discuss design details and applications of these instruments along with issues and challenges associated with employing the electron pulse-dilation technique. Additionally, methods to characterize instrument performance and improve tolerance to gamma and neutron background radiation are discussed.

47 OTHER INSTRUMENTATION↗

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may promote design of new materials with unexpected properties. Here, local atomic ordering is investigated in Ge–Sn alloys, a group-IV system that is attractive for its enhanced optoelectronic properties achievable via a direct gap for Sn concentrations exceeding ≈10 at. %. The substantial misfit strain imposed on Ge–Sn thin films during growth on bulk Si or Ge substrates can induce defect formation; however, misfit strain can be accommodated by growing Ge–Sn alloy films on Ge nanowires, which effectively act as elastically compliant substrates. In this work, Ge core/Ge 1–x Sn x (x ≈ 0.1) shell nanowires were characterized with extended x-ray absorption fine structure (EXAFS) to elucidate their local atomic environment. Simultaneous fitting of high-quality EXAFS data collected at both the Ge K-edge and the Sn K-edge reveals a large (≈ 40%) deficiency of Sn in the first coordination shell around a Sn atom relative to a random alloy, thereby providing the first direct experimental evidence of significant short-range order in this semiconductor alloy system. Furthermore, comparison of path length data from the EXAFS measurements with density functional theory simulations provides alloy atomic structures consistent with this conclusion.

36 MATERIALS SCIENCE↗

Analysis and mitigation of an oscillating background on hybrid complementary metal-oxide semiconductor (hCMOS) imaging sensors at the National Ignition Facility

Nanosecond-gated hybrid complementary metal-oxide semiconductor imaging sensors are a powerful tool for temporally gated and spatially resolved measurements in high energy density science, including inertial confinement fusion, and in laser diagnostics. However, a significant oscillating background excited by photocurrent has been observed in image sequences during testing and in experiments at the National Ignition Facility (NIF). Characterization measurements and simulation results are used to explain the oscillations as the convolution of the pixel-level sensor response with a sensor-wide RLC circuit ringing. Finally, data correction techniques are discussed for NIF diagnostics, and for diagnostics where these techniques cannot be used, a proof-of-principle image correction algorithm is presented.

42 ENGINEERING↗

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al 1–x B x N, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al 1–x B x N films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

36 MATERIALS SCIENCE↗

Characterization of the upgraded single-line-of-sight time-resolved x-ray imager using short-pulse visible and UV lasers

The single-line-of-sight time-resolved x-ray imager (SLOS-TRXI), a fast-gated x-ray imager used for capturing x-ray self-emission in inertial confinement fusion experiments on OMEGA, has been upgraded and characterized. SLOS-TRXI combines an electron-dilation imager and a hybrid complementary metal–oxide–semiconductor (hCMOS) sensor to capture multiple gated frames on a single line of sight with a temporal resolution of ~40 ps and a spatial resolution of 10 µm. The original hCMOS sensor with four frames was replaced with a newer-generation hCMOS sensor having eight frames. Gate characterizations of both the sensor and the entire SLOS-TRXI diagnostic were performed using ~10-ps FWHM visible (2ω) and UV (4ω) short-pulse lasers, respectively. A stepped echelon was used to generate a train of five UV laser pulses having an interpulse separation of 30 ± 3 ps. Characterization results of the hCMOS gating (2.28 ± 0.02-ns FWHM on average) and a temporal resolution of the upgraded SLOS-TRXI (34 ± 4-ps FWHM on average) are presented. A temporal magnification for the electron-dilation imager between 40 and 60 was inferred from the characterization results. Furthermore, the spatial resolution of the upgraded SLOS-TRXI remains the same in light of this work.

47 OTHER INSTRUMENTATION↗

Quantum ghost imaging microscopy depth-of-field study

Quantum ghost imaging approaches have been proposed to enhance biological microscopy, for example, using 2D visible detectors to provide IR images or providing additional dimensions of spatial or spectral information. Toward the goal of making such imaging schemes practical, we compare image quality and depth-of-field between traditional images and ghost images at the same excitation levels. We measure how image quality and depth-of-field depend on the parameters of the entangled light produced using type-I spontaneous parametric down-conversion (SPDC). We use a pair of time-synchronized, photon-timing single-photon avalanche diode (SPAD) array detectors to capture two distinct microscope imaging paths simultaneously on a photon-pair-by-photon-pair basis: one in a traditional imaging pathway and the other a quantum ghost imaging pathway. We calculate the depth-of-field, resolution, contrast, and signal-to-noise ratio (SNR) through the parameter space of a β-Barium Borate (BBO) type-I bulk non-linear crystal length and angle. Our results provide a basis for choosing parameters for quantum ghost imaging with type-I SPDC sources.

47 OTHER INSTRUMENTATION↗

3D quantum ghost imaging microscope

Quantum ghost imaging uses quantum-entangled photons to generate a two-dimensional image with only a bucket detector at the sample. Here we expand on this approach to generate a three-dimensional image without scanning. A quantum-entangled light source directly links information between a pair of 2D sensors, one of which captures a standard image from one perspective and a second sensor which captures a ghost image from a perpendicular perspective. By correlating the spatial information from the two detectors for each photon pair, we obtain three dimensions of spatial information (x, y, and z) for each scattered photon. We demonstrate that this system can study microscopic environments by imaging scattering from metallic nanoparticle clusters. This approach has the potential to greatly reduce the flux of light required to obtain a 3D image of a biological sample and thereby extend the number of images that can be obtained before photodamaging the sample.

Eshun, Audrey [Lawrence Livermore National Laborat↗

The 3D Quantum Microscope

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Biological and medical sciences, Optics and optica↗