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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Current sheath formation dynamics and structure for different insulator lengths of plasma focus device

The breakdown phase of the UNU-ICTP plasma focus (PF) device was successfully simulated using the electromagnetic particle in cell method. A clear uplift of the current sheath (CS) layer was observed near the insulator surface, accompanied with an exponential increase in the plasma density. Both phenomena were found to coincide with the surge in the electric current, which is indicative of voltage breakdown. Simulations performed on the device with different insulator lengths showed an increase in the fast ionization wave velocity with length. The voltage breakdown time was found to scale linearly with the insulator length. Different spatial profiles of the CS electron density, and the associated degree of uniformity, were found to vary with different insulator lengths. The ordering, according to the degree of uniformity, among insulator lengths of 19, 22, and 26 mm agreed with that in terms of soft X-ray radiation yield observed from experiments. This suggests a direct correlation between CS density homogeneity near breakdown and the radiation yield performance. These studies were performed with a linearly increasing voltage time profile as input to the PF device.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Robust topological surface state in Kondo insulator SmB{sub 6} thin films

Fabrication of smooth thin films of topological insulators with true insulating bulk are extremely important for utilizing their novel properties in quantum and spintronic devices. Here, we report the growth of crystalline thin films of SmB{sub 6}, a topological Kondo insulator with true insulating bulk, by co-sputtering both SmB{sub 6} and B targets. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy indicate films that are polycrystalline with a (001) preferred orientation. When cooling down, resistivity ρ shows an increase around 50 K and saturation below 10 K, consistent with the opening of the hybridization gap and surface dominated transport, respectively. The ratio ρ{sub 2K}/ρ{sub 300K} is only about two, much smaller than that of bulk, which indicates a much larger surface-to-bulk ratio. Point contact spectroscopy using a superconductor tip on SmB{sub 6} films shows both a Kondo Fano resonance and Andeev reflection, indicating an insulating Kondo lattice with metallic surface states.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

Five different kinds of insulators including BaTiO{sub 3}, TiO{sub 2}, Al{sub 2}O{sub 3}, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S) ohmic contact structure are studied. The effect for the dielectric constant (ε) of inserted insulator and the conduction band offset (CBO) between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV) to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO is not pretty high (∼10)

36 MATERIALS SCIENCE↗
DOE OSTI2015

Using stepped anvils to make even insulation layers in laser-heated diamond-anvil cell samples

Here, we describe a method to make even insulation layers for high-pressure laser-heated diamond-anvil cell samples using stepped anvils. Moreover, the method works for both single-sided and double-sided laser heating using solid or fluid insulation. The stepped anvils are used as matched pairs or paired with a flat culet anvil to make gasket insulation layers and not actually used at high pressures; thus, their longevity is ensured. We also compare the radial temperature gradients and Soret diffusion of iron between self-insulating samples and samples produced with stepped anvils and find that less pronounced Soret diffusion occurs in samples with even insulation layers produced by stepped anvils.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition

The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Tuning and stabilizing topological insulator Bi{sub 2}Se{sub 3} in the intrinsic regime by charge extraction with organic overlayers

In this work, we use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator (TI) Bi{sub 2}Se{sub 3} thin films into the intrinsic (bulk-insulating) regime. We demonstrate the tuning and stabilization of intrinsic topological insulators at high mobility with low-cost organic films. With the protection of the organic charge extraction layers tetrafluorotetracyanoquinodimethane or tris(acetylacetonato)cobalt(III) (Co(acac){sub 3}), the sample is stable in the atmosphere with chemical potential ∼135 meV above the Dirac point (85 meV below the conduction band minimum, well within the topological insulator regime) after four months, which is an extraordinary level of environmental stability. The Co complex demonstrates the use of an organometallic for modulating TI charge density. The mobility of surface state electrons is enhanced as high as ∼2000 cm{sup 2}/V s. Even at room temperature, a true topologically insulating state is realized and stabilized for months' exposure to the atmosphere.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Thermal Insulation for a High Temperature Molten Salt Storage Tank in a CSP Plant

A ternary molten chloride has been suggested as a high temperature (550-720 °C) sensible heat storage medium for a two-tank system. An effective thermal insulation is proposed to provide an opportunity for the fabrication of both the hot and cold storage tanks from lower cost metals, e.g. A240-347H, by maintaining the tank wall below 500 °C. To achieve this, the hot storage tank mainly comprises of inner shell (11.4 cm of a refractory brick as liner (KX-99®), 30 cm of insulation brick) and outer metal shell, where 5 cm of frozen layer of PCM800 (NaCl), and 5 cm of ceramic wool fill the annular space between the shells. Another layer of ceramic wool was introduced at the outer side of the metal shell to keep the temperature lower than 60 °C. ANSYS Fluent was used for the numerical study of the cool down behavior of the system during idle period when tank is quarter-filled. The heat transfer modes were considered as radiation and natural convection heat transfer from the hot molten salt at 720 °C, conduction through the solid layers and convection heat transfer from the outer shell to the environment at 15 °C. The results showed that the proposed insulation system including a frozen layer of PCM800 maintains the temperature at the metal wall lower than 500 °C, and lower than 60°C at the outer side of the tank. Apart from the insulation property of the frozen layer of PCM800, it absorbs any leak of hot molten salt, acting as a barrier between salt and the metal shell. The thermal performance analysis provide an insight into the benefits of the multilayer insulation.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Impact of direct exchange coupling via the insulator on the magnetic tunnel junction based molecular spintronics devices with competing molecule induced inter-electrode coupling

The magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) approach is suitable for mass production. This approach provides solutions to fabrication difficulties related to reliably connecting molecular device elements to the ferromagnets (FMs). To producing MTJMSD, the molecular channels are bridged across the insulator of an MTJ testbed with exposed side edges. In an MTJMSD, two FMs are simultaneously connected by an insulator film and the molecular channels along the exposed sides. In our prior experimental studies, we observed that molecules could produce strong coupling between ferromagnets in the presence of the competing coupling via an insulator. In this paper, our Monte Carlo Simulation (MCS) was used to study the impact of coupling variation via insulator (a.k.a. Ji) on the magnetic properties of an MTJMSD. We studied the effect of Ji while varying the molecule induced antiferromagnetic exchange coupling. The ferromagnetic or antiferromagnetic nature and magnitude of Ji determined the resultant effect. Antiferromagnetic Ji enhanced the pre-existing antiferromagnetic molecular coupling effect. Ferromagnetic Ji competed with the opposite nature of antiferromagnetic molecular coupling. Our MCS may help to understand the impact of insulator thickness and defects on the molecular spintronics device performance and design process.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Characterization of Candidate Insulation Resins for Training Reduction in High Energy Physics Magnets

Superconducting magnets are critical components in particle accelerators and are used to generate and sustain the large magnetic fields needed for High Energy Physics programs. One significant issue with current epoxy insulated Nb$_{3}$Sn magnets is the long training process required before stable magnet performance can be realized. It is believed that training can be significantly reduced by addressing magnet quenching through improvements in the epoxy electrical insulation. In this work, two approaches for insulation modification have been undertaken: (1) addition of thermally conductive fillers to help with quench management and (2) development of insulation resins with high strain capability at cryogenic temperatures. This paper will discuss the characterization of these insulation systems to verify their performance prior to evaluation in subscale Nb$_{3}$Sn canted cosine theta accelerator dipole magnets.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

High harmonic generation in magnetically-doped topological insulators

As a new class of condensed matter, topological insulators challenge the traditional wisdom of condensed matter physics. Doping topological insulators with magnetic elements can realize the quantum anomalous Hall state, a two-dimensional bulk insulator with nonzero Chern number. High harmonic generation (HHG) has emerged as a very promising tool to probe electronic properties. However, its application to magnetically doped topological insulators has not been realized. Here, we predict that high harmonics from six quintuple layers of Bi2Se3(6QL-Bi2Se3) carry crucial information about its structure. HHG sensitively depends on crystal symmetry and laser polarization. While in the parent compound 6QL-Bi2Se3 all the harmonic orders are odd, once it is doped with a magnetic Cr atom, selective even and odd harmonics appear, depending on whether the laser field is in-plane or out-of-plane. With spin-orbit coupling, both even and odd harmonics appear. We find that these seemingly complicated harmonics have a simple origin: microscopic interplay between symmetry operations and laser polarization. Our finding demonstrates the unexplored power of HHG in topological insulators and will have a broad impact on future research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Topological nonmagnetic impurity states in topological Kondo insulators

We examine here the presence of nonmagnetic impurities in a hybridization gap model of a Kondo insulator which has band inversion. The model has been used to predict that SmB 6 is a topological insulator. We show that there are two types of nonmagnetic impurity states in a Kondo insulator. The type of states can be categorized as deep impurity states, similar to the impurity states in an ordinary metal, and impurity states which have energies within the hybridization gap. Unlike the deep impurity states which only form if the impurity potential exceeds a critical value of the order of the conduction bandwidth, the in-gap impurity states form for exceptionally small values of the impurity potential comparable to the hybridization gap. This finding may explain why Kondo insulators are found to be exceptionally sensitive to impurities. We demonstrate that these in-gap states are caused by band inversion and have properties similar to those expected for impurities in a topological insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Twisted bilayer graphene. IV. Exact insulator ground states and phase diagram

Here, we derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4) × U(4) symmetry, and we find that the exact ground states at integer filling – 4 ≤ $\textit{ν}$ ≤ 4 relative to charge neutrality are Chern insulators of Chern numbers $ν_C$ = 4 – |$\textit{ν}$ |, 2 – |$\textit{ν}$ |, $\cdots$, |$\textit{ν}$ | – 4, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $\textit{ν}$ = 0 , ± 2 has exact ground states of Chern number 0, while $\textit{ν}$ = ±1, ± 3 has perturbative ground states of Chern number $ν_C$ = ± 1, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second-order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $ν_C$ = 0 (0 < |$ν_C$| < 4 – |$\textit{ν}$ |) at integer fillings $\textit{ν}$ are fully (partially) intervalley coherent, while the insulator states with Chern number |$ν_C$| = 4 – |$\textit{ν}$ | are valley polarized. However, for 0 < |$ν_C$| ≤ 4 – |$\textit{ν}$ |, the fully intervalley coherent states are highly competitive (0.005 meV/electron higher). At nonzero magnetic field |$\textit{B}$ | > 0, a first-order phase transition for $\textit{ν}$ = ± 1, ± 2 from Chern number $ν_C$ = sgn ($\textit{νB}$)(2 – |$\textit{ν}$ |) to $ν_C$ = sgn ($\textit{νB}$)(4 – |$\textit{ν}$ |) is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Decoupling of the antiferromagnetic and insulating states in Tb-doped Sr 2 IrO 4

Sr 2 IrO 4 is a spin-orbit coupled insulator with an antiferromagnetic (AFM) transition at T N = 240 K. We report results of a comprehensive study of single-crystal Sr 2 Ir 1-x Tb x O 4 (0≤x≤0.03). This study found that mere 3% (x=0.03) tetravalent Tb 4+ (4f 7 ) substituting for Ir 4+ (rather than Sr 2+ ) completely suppresses the long-range collinear AFM transition but retains the insulating state, leading to a phase diagram featuring a decoupling of magnetic interactions and charge gap. The insulating state at x = 0.03 is characterized by an unusually large specific heat at low temperatures and an incommensurate magnetic state having magnetic peaks at (0.95, 0, 0) and (0, 0.95, 0) in the neutron diffraction, suggesting a spiral or spin density wave order. It is apparent that Tb doping effectively changes the relative strength of the SOI and the tetragonal CEF and enhances the Hund’s rule coupling that competes with the SOI, and destabilizes the AFM state. However, the disappearance of the AFM accompanies no metallic state chiefly because an energy level mismatch for the Ir and Tb sites weakens charge carrier hopping and renders a persistent insulating state. Furthermore, this work highlights an unconventional correlation between the AFM and insulating states in which the magnetic transition plays no critical role in the formation of the charge gap in the iridate.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Origin of Transitions between Metallic and Insulating States in Simple Metals

Unifying principles that underlie recently discovered transitions between metallic and insulating states in elemental solids under pressure are developed. Using group theory arguments and first principles calculations, we show that the electronic properties of the phases involved in these transitions are controlled by symmetry principles not previously recognized. The valence bands in these systems are described by simple and composite band representations constructed from localized Wannier functions centered on points unoccupied by atoms, and which are not necessarily all symmetrical. The character of the Wannier functions is closely related to the degree of s-p(-d) hybridization and reflects multi-center chemical bonding in these insulating states. The conditions under which an insulating state is allowed for structures having an integer number of atoms per primitive unit cell as well as re-entrant (i.e., metal-insulator-metal) transition sequences are detailed, resulting in predictions of novel behavior such as phases having three-dimensional Dirac-like points. The general principles developed are tested and applied to the alkali and alkaline earth metals, including elements where high-pressure insulating phases have been identified or reported (e.g., Li, Na, and Ca).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Nature of the insulating ground state of the 5d postperovskite CaIrO 3

In this study, the insulating ground state of the 5d transition metal oxide CaIrO 3 has been classified as a Mott-type insulator. Based on a systematic density functional theory (DFT) study with local, semilocal, and hybrid exchange-correlation functionals, we reveal that the Ir t 2 g states exhibit large splittings and one-dimensional electronic states along the c axis due to a tetragonal crystal field. Our hybrid DFT calculation adequately describes the antiferromagnetic (AFM) order along the c direction via a superexchange interaction between Ir 4+ spins. Furthermore, the spin-orbit coupling (SOC) hybridizes the t 2 g states to open an insulating gap. These results indicate that CaIrO 3 can be represented as a spin-orbit Slater insulator, driven by the interplay between a long-range AFM order and the SOC. Such a Slater mechanism for the gap formation is also demonstrated by the DFT + dynamical mean field theory calculation, where the metal-insulator transition and the paramagnetic to AFM phase transition are concomitant with each other.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Theoretical Coupling of Free-Flowing Ions and Magnetically Insulated Electrons

Magnetic insulation of electrons prevents losses and can be applied to generating radiation or electron sources for high current and high power applications. Ion emission from the anode may degrade magnetic insulation. We develop equilibrium theory, self-consistently coupling magnetically insulated electron flow with free-flowing injected ions. Generally, ion injection is self-limiting from space charge; however, once insulation strength drops below about 1.2x the magnetic insulation threshold, ion space-charge limits vanish. Further, the gap effectively short-circuits and the electron flow layer asymptotically approaches the anode. In this regime a quasineutral, nonthermal plasma manifests, effectively reducing gap distance and suggesting quasiequilibrium gap closure evolution.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene

The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell ( ν = 1 ), we see a correlated insulator with a Chern number that can be tuned between C = 0 and + 1 by an electric displacement field. This is accompanied by a series of additional Chern insulators with C = + 1 originating from fractional fillings of the moiré lattice— ν = 1 / 4 , 1 / 3 , and 2 / 3 —associated with the formation of moiré-driven topological electronic crystals. At ν = 2 / 3 the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient C = 2 / 3 fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators. Published by the American Physical Society 2025

Waters, Dacen (ORCID:0000000335880039)↗