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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Crystal and Electronic Structures of CuxS Solar Cell Absorbers

The crystal and electronic band structures of Cu{sub x}S(1.25 < x {le} 2) are systematically studied using the density-functional theory method. For Cu{sub 2}S, all the three chalcocite phases, i.e., the low-chalcocite, the high-chalcocite, and the cubic-chalcocite phases have direct band gaps around 1.3-1.5 eV, with the low-chalcocite being the most stable one. However, Cu vacancies can form spontaneously in these compounds, causing instability of Cu{sub 2}S. We find that under Cu-rich condition, the anilite Cu{sub 1.75}S is the most stable structure. It has a predicted band gap of 1.4 eV and could a promising solar cell absorber.

14 SOLAR ENERGY↗
DOE OSTI2021

In Operando Angle‐Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle‐resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8° to 12.7°. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/μm at the rotational domain boundaries in the device. These proof‐of‐principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.

Majchrzak, Paulina↗
NASA NTRS1967

Electronic structure of Ca, Sr, and Ba under pressure.

Electronic band structure calculations phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure

BARIUM↗
DOE OSTI2024

Nuclear Quantum Effects on the Electronic Structure of Water and Ice

The electronic properties and optical response of ice and water are intricately shaped by their molecular structure, including the quantum mechanical nature of the hydrogen atoms. Despite numerous previous studies, a comprehensive understanding of the nuclear quantum effects (NQEs) on the electronic structure of water and ice at finite temperatures remains elusive. Here, we utilize molecular simulations that harness efficient machine-learning potentials and many-body perturbation theory to assess how NQEs impact the electronic bands of water and hexagonal ice. By comparing path-integral and classical simulations, we find that NQEs lead to a larger renormalization of the fundamental gap of ice, compared to that of water, ultimately yielding similar bandgaps in the two systems, consistent with experimental estimates. Our calculations suggest that the increased quantum mechanical delocalization of protons in ice, relative to water, is a key factor leading to the enhancement of NQEs on the electronic structure of ice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Electronic Structures of Newly Discovered Quasi-One-Dimensional Superconductors A{sub 2}Mo{sub 3}As{sub 3} (A=K,Rb,Cs)

Electronic structures of the newly discovered quasi-one-dimensional superconductors A{sub 2}Mo{sub 3}As{sub 3} (A=K, Rb and Cs) are studied through first-principles calculations. We find that the bond lengths within the [Mo{sub 6}As{sub 6}]{sup 4−} chains are robust against the replacement of alkali cations, leading to quite similar electronic structures among the three members. Three bands cross the Fermi level and form two quasi-one-dimensional Fermi surfaces as well as one three dimensional component. The obtained density of states near the Fermi level show great Mo-4d orbitals character, in particular the d{sub z{sup 2}}, d{sub xy} and d{sub x{sup 2}−y{sup 2}} orbitals. Our calculations show that A{sub 2}Mo{sub 3}As{sub 3} share great similarity in electron properties with extensively studied A{sub 2}Cr{sub 3}As{sub 3}, indicating that A{sub 2}Mo{sub 3}As{sub 3} are probably another family of unconventional quasi-one-dimensional superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Ab Initio Investigation of Structural, Electronic, and Magnetic Properties of Cr-Doped ZnS and ZnSe in Wurtzite Structure

Using the first-principles calculations with the full potential linear muffin–tin orbital (FP-LMTO) method, we investigated the structural, electronic, and magnetic properties of Zn{sub 1−x}Cr{sub x}(S,Se)-diluted magnetic semiconductors (DMSs) in wurtzite structures with varying concentrations (x = 0.0625, x = 0.125, and x = 0.25) of Cr. The electronic properties indicated that Zn{sub 1−x}Cr{sub x}(S,Se), in all concentrations, exhibited half-metallic ferromagnetic (HMF) behavior with spin polarization of 100%. The density of states showed a hybridization between the p(S, Se) and 3d(Cr) states, which created an antibonding state in the gap that stabilized the ferromagnetic ground state linked to the double-exchange mechanism. Therefore, these compounds are highly likely candidates for spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electronic structure of mononuclear Cu-based molecule from density-functional theory with self-interaction correction

In this paper, we investigate the electronic structure of a planar mononuclear Cu-based molecule [Cu(C 6 H 4 S 2 ) 2 ] z in two oxidation states ( z = –2, –1) using density-functional theory (DFT) with Fermi–Löwdin orbital (FLO) self-interaction correction (SIC). The dianionic Cu-based molecule was proposed to be a promising qubit candidate. Self-interaction error within approximate DFT functionals renders severe delocalization of electron and spin densities arising from 3 d orbitals. The FLO-SIC method relies on optimization of Fermi–Löwdin orbital descriptors (FODs) with which localized occupied orbitals are constructed to create SIC potentials. Starting with many initial sets of FODs, we employ a frozen-density loop algorithm within the FLO-SIC method to study the Cu-based molecule. We find that the electronic structure of the molecule remains unchanged despite somewhat different final FOD configurations. In the dianionic state (spin S = 1/2), FLO-SIC spin density originates from the Cu d and S p orbitals with an approximate ratio of 2:1, in quantitative agreement with multireference calculations, while in the case of SIC-free DFT, the orbital ratio is reversed. Overall, FLO-SIC lowers the energies of the occupied orbitals and, in particular, the 3 d orbitals unhybridized with the ligands significantly, which substantially increases the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) compared to SIC-free DFT results. The FLO-SIC HOMO–LUMO gap of the dianionic state is larger than that of the monoanionic state, which is consistent with experiment. Our results suggest a positive outlook of the FLO-SIC method in the description of magnetic exchange coupling within 3 d -element-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

First-principles study of structural, electronic, vibrational, dielectric and elastic properties of tetragonal Ba₂YTaO₆

We report first-principles study of structural, electronic, vibrational, dielectric, and elastic properties of Ba₂YTaO₆, a pinning material in high temperature superconductors (HTS), by using density functional theory. By using different exchange-correlation potentials, the accuracy of the calculated lattice constants of Ba₂YTaO₆ has been achieved with GGA-RPBE, since many important physical quantities crucially depend on change in volume. We have calculated the electronic band structure dispersion, total and partial density of states to study the band gap origin and found that Ba₂YTaO₆ is an insulator with a direct band gap of 3.50 eV. From Mulliken population and charge density studies, we conclude that Ba₂YTaO₆ have a mixed ionic-covalent character. Moreover, the vibrational properties, born effective charges, and the dielectric permittivity tensor have been calculated using linear response method. Vibrational spectrum determined through our calculations agrees well with the observed Raman spectrum, and allows assignment of symmetry labels to modes. We perform a detailed analysis of the contribution of the various infrared-active modes to the static dielectric constant to explain its anisotropy, while electronic dielectric tensor of Ba₂YTaO₆ is nearly isotropic, and found that static dielectric constant is in good agreement with experimental value. The six independent elastic constants were calculated and found that tetragonal Ba₂YTaO₆ is mechanically stable. Other elastic properties, including bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and elastic anisotropy ratios are also investigated and found that Poisson's ratio and Young's modulus of Ba₂YTaO₆ are similar to that of other pinning materials in HTS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Effects of chemical disorder and spin-orbit coupling on the electronic-structure and Fermi-surface topology of YbSb-based monopnictides

Here, in this work, we study the influence of disorder on the electronic structure of YbSb—a rare-earth monopnictide featuring a simple rocksalt (B1) crystal structure and a well-defined Fermi-surface topology—by employing first-principles density-functional theory. We focus on chemical disorder introduced through Te and Al doping, selected based on their thermodynamic stability in alloyed configurations, to understand how such perturbations modify the electronic states of YbSb. Our results indicate that Te doping predominantly introduces electronlike states at the 𝑋 and 𝐿 points, while Al doping leads to a suppression of holelike states at Γ, effectively driving the system from a semimetallic state to one characterized by very narrow-gap behavior at Γ. This modulation of the Fermi surface, particularly the reduction of central hole pockets at Γ, plays a central role in altering interpocket scattering—a mechanism critical for tuning quantum transport properties, including superconductivity. This disorder-driven modulation of the Fermi surface, particularly the suppression of central hole pockets at Γ, controls interpocket scattering, which is essential for optimizing quantum transport properties, including superconductivity. Our results show that disorder can be effectively used for engineering band topology, thereby tuning quantum related response through a tailored electronic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle-Resolved Photoemission Spectroscopy

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, in this work, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle-resolved photoemission spectroscopy (ARPES). Large-scale first principles simulations are enabled by using DFT calculations with a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes.

42 ENGINEERING↗
DOE OSTI2015

Electronic structure and magnetic properties of zigzag blue phosphorene nanoribbons

We investigated the electronic structure and magnetism of zigzag blue phosphorene nanoribbons (ZBPNRs) using first principles density functional theory calculations by changing the widths of ZBPNRs from 1.5 to 5 nm. In addition, the effect of H and O passivation was explored as well. The ZBPNRs displayed intra-edge antiferromagnetic ground state with a semiconducting band gap of ∼0.35 eV; and this was insensitive to the edge structure relaxation effect. However, the edge magnetism of ZBPNRs disappeared with H-passivation. Moreover, the band gap of H-passivated ZBPNRs was greatly enhanced because the calculated band gap was ∼1.77 eV, and this was almost the same as that of two-dimensional blue phosphorene layer. For O-passivated ZBPNRs, we also found an intra-edge antiferromagnetic state. Besides, both unpassivated and O-passivated ZBPNRs preserved almost the same band gap. We predict that the electronic band structure and magnetic properties can be controlled by means of passivation. Moreover, the edge magnetism can be also modulated by the strain. Nonetheless, the intrinsic physical properties are size independent. This feature can be an advantage for device applications because it may not be necessary to precisely control the width of the nanoribbon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Electronic structure of lanthanide scandates

Here, x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and density functional theory calculations were used to study the electronic structure of three lanthanide scandates: GdScO 3 , TbScO 3 , and DyScO 3 . X-ray photoelectron spectra simulated from first-principles calculations using a combination of on-site hybrid and GGA + U methods were found to be in good agreement with experimental x-ray photoelectron spectra. The hybrid method was used to model the ground state electronic structure and the GGA + U method accounted for the shift of valence state energies due to photoelectron emission via a Slater-Janak transition state approach. From these results, the lanthanide scandate valence bands were determined to be composed of Ln4 f , O2 p , and Sc3 d states, in agreement with previous work. However, contrary to previous work the minority Ln4 f states were found to be located closer to, and in some cases at, the valence band maximum. This suggests that minority Ln4 f electrons may play a larger role in lanthanide scandate properties than previously thought.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Stability and Electronic Structures of CuxS Solar Cell Absorbers: Preprint

CuxS is one of the most promising solar cell absorber materials that has the potential to replace the leading thin-film solar cell material Cu(In,Ga)Se2 for high efficiency and low cost. In the past, solar cells based on CuxS have reached efficiency as high as 10%, but it also suffers serious stability issues. To further improve its efficiency and especially the stability, it is important tounderstand the stability and electronic structure of CuxS. However, due to the complexity of their crystal structures, no systematic theoretical studies have been carried out to understand the stability and electronic structure of the CuxS systems. In this work, using first-principles method, we have systematically studied the crystal and electronic band structures of CuxS (1.25 < x </= 2).For Cu2S, we find that all the three chalcocite phases, i.e., the low-chalcocite, the high-chalcocite, and the cubic-chalcocite phases, have direct bandgaps around 1.3-1.5 eV, with the low-chalcocite being the most stable one. However, Cu vacancies can form spontaneously in these compounds, causing instability of Cu2S. We find that under Cu-rich condition, the anilite Cu1.75S is the most stablestructure. It has a predicted bandgap of 1.4 eV and could be a promising solar cell absorber.

14 SOLAR ENERGY↗
DOE OSTI2014

Role of defects in BiFeO₃ multiferroic films and their local electronic structure by x-ray absorption spectroscopy

Present study reports the role of defects in the electrical transport in BiFeO₃ (BFO) multiferroic films and its local electronic structure investigated by near-edge X-ray absorption fine structure. Defects created by high energy 200 MeV Ag⁺¹⁵ ion irradiation with a fluence of ∼5 × 10¹¹ ions/cm² results in the increase in structural strain and reduction in the mobility of charge carriers and enhancement in resistive (I-V) and polarization (P-E) switching behaviour. At higher fluence of ∼5 × 10¹² ions/cm², there is a release in the structural strain due to local annealing effect, resulting in an increase in the mobility of charge carriers, which are released from oxygen vacancies and hence suppression in resistive and polarization switching. Near-edge X-ray absorption fine structure studies at Fe L₃,₂- and O K-edges show a significant change in the spectral features suggesting the modifications in the local electronic structure responsible for changes in the intrinsic magnetic moment and electrical transport properties of BFO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Exploring the electronic structure and optical properties of the quaternary selenide compound, Ba{sub 4}Ga{sub 4}SnSe{sub 12}: For photovoltaic applications

Due to huge demand on discovering new materials for energy, we used first-principle calculations to explore the electronic structure and optical properties of a recent quaternary selenide, namely Ba{sub 4}Ga{sub 4}SnSe{sub 12}. The electronic structure and the optical properties of Ba{sub 4}Ga{sub 4}SnSe{sub 12} were calculated through a reliable approach of Engle Vosko-GGA (EV-GGA). We found that Ba{sub 4}Ga{sub 4}SnSe{sub 12} has a direct band gap of 2.14 eV positioned at Γ. Acquiring the fundamental characteristics of Ba{sub 4}Ga{sub 4}SnSe{sub 12,} we studied the linear optical properties like dielectric function in the energy range of 0–14 eV. From the dielectric function we noticed a weak directional anisotropy for the two components. The absorption spectrum indicates the possibility of greater multiple direct and indirect inter-band transitions in the visible regions and shows similar behavior with experimental spectrum. Ba{sub 4}Ga{sub 4}SnSe{sub 12} can be used as shielding material from UV radiations. Present study predicts that the Ba{sub 4}Ga{sub 4}SnSe{sub 12} is promising for photovoltaic applications due to their high absorption of solar radiations and photoconductivity in the visible range. - Graphical abstract: Interesting quaternary selenide compound, Ba{sub 4}Ga{sub 4}SnSe{sub 12}, for photovoltaic applications. - Highlights: • Ba{sub 4}Ga{sub 4}SnSe{sub 12} is a quaternary selenide designed for PV and thermoelectric. • Ba{sub 4}Ga{sub 4}SnSe{sub 12} has a direct band gap of 2.14 eV. • Ba{sub 4}Ga{sub 4}SnSe{sub 12,} has a maximum reflectivity in the visible and UV regions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Unraveling structural, electronic, and magnetic ambiguities in P⁢b 1−𝛿⁢ Cr⁢O 3 with an insulating charge-transfer band structure

As a recently identified Mott system, PbCr⁢O 3 remains largely unexplored, especially for its band structure, leading to many contentious issues on its structural, electronic, and magnetic properties. Here we present a comprehensive study of two different P⁢b 1−𝛿⁢ Cr⁢O 3 (δ = 0 and 0.15) samples involving atomic deficiency prepared under pressure. By means of state-of-the-art diffraction techniques, the crystal structure of PbCr⁢O 3 is definitively determined to adopt the pristine 𝑃𝑚⁢$\overline{3}$𝑚 symmetry, rather than other previously misassigned structures of M2-Pm$\overline{3}$⁢𝑚 and Pmnm. The two materials exhibit a similar charge-transfer-type insulating band structure, and the charge-transfer effect splits both Cr 2⁢𝑝 and Pb 4⁢𝑓 orbitals, rationalizing doublet splitting of the associated spectral lines. Nearly identical nominal cationic valence states of C⁢r 4+ and P⁢b 2+ are identified for this oxide system, hence calling into question the validity of recently proposed charge disproportionation mechanisms. In addition, P⁢b 0.85 ⁢Cr⁢O 3 exhibits an anomalously higher Néel temperature of ∼240 K than that of PbCr⁢O 3 (i.e., ∼200 K), likely due to the deficiency-induced enhancements of Cr3𝑑–O⁢2⁢𝑝 orbital overlap and magnetic exchange. In conclusion, these findings provide much solid evidence to look into the fundamental properties of this important material system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electronic structures of reconstructed zigzag silicene nanoribbons

Edge states and magnetism are crucial for spintronic applications of nanoribbons. Here, using first-principles calculations, we explore structural stabilities and electronic properties of zigzag silicene nanoribbons (ZSiNRs) with Klein and pentagon-heptagon reconstructions. Comparing to unreconstructed zigzag edges, deformed bare pentagon-heptagon ones are favored under H-poor conditions, while H-rich surroundings stabilize di-hydrogenated Klein edges. These Klein edges have analogous magnetism to zigzag ones, which also possess the electric-field-induced half-metallicity of nanoribbons. Moreover, diverse magnetic states can be achieved by asymmetric Klein and zigzag edges into ZSiNRs, which could be transformed from antiferromagnetic-semiconductors to bipolar spin-gapless-semiconductors and ferromagnetic-metals depending on edge hydrogenations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

36 MATERIALS SCIENCE↗