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At least 541 records · Page 30

Magnetosphere, ionosphere and thermosphere; Proceedings of the Topical Meeting of the Twenty-sixth COSPAR Plenary Meeting, Toulouse, France, June 30-July 11, 1986

Papers are presented on satellite observations of new particle and field signatures associated with SAR arc field lines at magnetospheric heights, the structure of the polar oval from simultaneous observations of the optical emissions and particle precipitations during the period of high solar activity between 1981 and 1982, and SAR-arcs and emissions in the main trough of the electron concentration. Also considered are a model calculation of hydrogen Balmer emissions under various modes of proton precipitation, electron precipitation near L = 4, and an investigation of the thermosphere-ionosphere interaction by means of the neutral post-storm effect. Other topics include auroral electric field penetration into the middle-latitude trough, field-aligned currents and related phenomena in the cust, and the positive phase of ionospheric storms and its connection with the dayside cusp.

Schmerling, E. R.↗

Field-induced spin level crossings within a quasi-$XY$ antiferromagnetic state in $Ba$ 2 $FeSi$ 2 $O$ 7

Here, we present a high-field study of the strongly anisotropic easy-plane square lattice $S$ = 2 quantum magnet $Ba$ 2 $FeSi$ 2 $O$ 7 . This compound is a rare high-spin antiferromagnetic system with very strong easy-plane anisotropy, such that the interplay between spin level crossings and antiferromagnetic order can be studied. We observe a magnetic field-induced spin level crossing occurring within an ordered state. This spin level crossing appears to preserve the magnetic symmetry while producing a nonmonotonic dependence of the order parameter magnitude. The resulting temperature–magnetic field phase diagram exhibits two dome-shaped regions of magnetic order overlapping around 30 T. The ground state of the lower-field dome is predominantly a linear combination of |$S^z$ = 0$\rangle$ and |$S^z$ = 1$\rangle$ states, while the ground state of the higher-field dome can be approximated by a linear combination of |$S^z$ = 1$\rangle$ and |$S^z$ = 2$\rangle$ states. At 30 T, where the spin levels cross, the magnetization exhibits a slanted plateau, the magnetocaloric effect shows a broad hump, and the electric polarization shows a weak slope change. We determined the detailed magnetic phase boundaries and the spin level crossings using measurements of magnetization, electric polarization, and the magnetocaloric effect in pulsed magnetic fields to 60 T. Furthermore, we calculate these properties using a mean-field theory based on direct products of SU(5) coherent states and find good agreement. Finally, we measure and calculate the magnetically induced electric polarization that reflects magnetic ordering and spin level crossings. This multiferroic behavior provides another avenue for detecting phase boundaries and symmetry changes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-throughput synthesis of high-entropy alloys via parallelized electric field assisted sintering

Materials discovery and design is an expensive and time-consuming process, though necessary to advance many engineering fields. In this work, a novel tooling design is utilized in conjunction with electric field assisted sintering (EFAS) to effectively create a new high-throughput synthesis technique: parallelized EFAS. Through this technique, a wide range of material compositions and geometries can be synthesized in parallel as isolated samples or as part of contiguous arrays. Multiple tooling designs are explored to examine both the flexibility and limitations of the technique. A series of increasing complex alloys is produced simultaneously using in situ alloying, beginning with pure Ni and adding equimolar constituents up to the septenary high-entropy alloy AlCoCrCuFeMnNi. Microstructural characterization reveals each sample is effectively fully dense and chemically homogenous while exhibiting phases in agreement with CALPHAD predictions. Scalability of parallelized EFAS is then experimentally demonstrated and the implications for materials discovery and automation are discussed.

36 - MATERIALS SCIENCE↗

A thermosphere/ionosphere general circulation model with coupled electrodynamics

A new simulation model of upper atmospheric dynamics is presented that includes self-consistent electrodynamic interactions between the thermosphere and ionosphere. This model calculates the dynamo effects of thermospheric winds, and uses the resultant electric fields and currents in calculating the neutral and plasma dynamics. A realistic geomagnetic field geometry is used. Sample simulations for solar maximum equinox conditions illustrate two previously predicted effects of the feedback. Near the magnetic equator, the afternoon uplift of the ionosphere by an eastward electric field reduces ion drag on the neutral wind, so that relatively strong eastward winds can occur in the evening. In addition, a vertical electric field is generated by the low-latitude wind, which produces east-west plasma drifts in the same direction as the wind, further reducing the ion drag and resulting in stronger zonal winds.

Richmond, A. D.↗

Imaging Reconfigurable Molecular Concentration on a Graphene Field-Effect Transistor

The spatial arrangement of adsorbates deposited onto a clean surface under vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors (FETs) exhibit reversible, electrically tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F 4 TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables the precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. Gate-tunable molecular concentration is explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Finally, the molecular surface concentration is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Plasma gradient effets on doubel-probe measurements in the magnetosphere

The effects on double-probe electric field measurements induced by electron density and temperature gradients are investigated. We show that on some occasions such gradients may lead to marked spurious electric fields if the probes are assumed to lie at the same probe potential with repect to the plasma. The use of a proper bias current will decrease the magnitude of such an error. When the probes are near the plasma potential, the magnitude of these error signals, delta Epsilon, can vary as delta Epsilon approx. T(sub e)(Delta n(sub e)/n(sub e)) + 0.5 Delta T(sub e), where T(sub e) is the electron temperature, Delta n(sub e)/ n(sub e) the relative electron density variation between the two sensors, and Delta T(sub e) the electron temperature difference between the two sensors. This not only implies that the error signals will increase linearly with the density variations but also that such signatures grow with Delta T(sub e) i.e., such effects are 10 times larger in a 10-eV plasma than in a 1-eV plasma. This type of error is independent of the probe separation distance provided the gradient scale length is much larger than the distance. The largest errors occur when the probes are near to the plasma potential. During the crossing of a small structure (e.g, a double layer) the error signal appears as a bipolar signature. Our analysis shows that errors in double-probe measurements caused by plasma gradients are not significant at large scale (much greater than 1 km) plasma boundaries, and may only be important in cases where small-scale (less than 1 km), internal gradient structures exist. Bias currents tailored for each plasma parameter regime (i.e., variable bias current) would improve the double-probe response to gradient effects considerably.

Laakso, Harri↗

Dual‐Functional High‐Entropy Polymer Exhibiting Giant Cross‐Energy Couplings at Low Fields

A key component of cooling devices is the transfer of entropy from the cold load to heat sink. An electrocaloric (EC) polymer capable of generating both large electrocaloric effect (ECE) and substantial electroactuation can enable EC cooling devices to pump heat without external mechanisms, resulting in compact designs and enhanced efficiency. However, achieving both high ECE and significant electroactuation remains challenging. Herein, it is demonstrated that poly(vinylidene fluoride‐trifluoroethylene‐chlorofluoroethylene‐double bond) [P(VDF‐TrFE‐CFE‐DB)] tetrapolymers can simultaneously generate high electrocaloric effects and electroactuations under low fields. These P(VDF‐TrFE‐CFE‐DB) tetrapolymers are synthesized through the dehydrochlorination of P(VDF‐TrFE‐CFE) terpolymer. By facile tuning the composition of the initial terpolymer to avoid pure relaxor state, tetrapolymers with optimal DB compositions are achieved, near the critical endpoint of normal ferroelectric phase with diffused phase transition. The nearly vanishing energy barriers between the nonpolar to polar phases result in a strong electrocaloric response and significant electroactuation. Specifically, the P(VDF‐TrFE‐CFE‐DB) tetrapolymer exhibits an EC entropy change Δ S of 100 J kg −1 K −1 under 100 MV m −1 : comparable to state‐of‐the‐art (SOA) EC polymers, while delivering nearly twice the electroactuation of the SOA EC polymers. This work presents a general strategy for developing EC materials that combine large electrocaloric effect and electroactuation at low electric fields.

36 MATERIALS SCIENCE↗

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗

Electric-field-driven octahedral rotation in perovskite

Rotation of MO 6 (M = transition metal) octahedra is a key determinant of the physical properties of perovskite materials. Therefore, tuning physical properties, one of the most important goals in condensed matter research, may be accomplished by controlling octahedral rotation (OR). In this study, it is demonstrated that OR can be driven by an electric field in Sr 2 RuO 4 . Rotated octahedra in the surface layer of Sr2RuO4 are restored to the unrotated bulk structure upon dosing the surface with K. Theoretical investigation shows that OR in Sr 2 RuO 4 originates from the surface electric field, which can be tuned via the screening effect of the overlaid K layer. This work establishes not only that variation in the OR angle can be induced by an electric field, but also provides a way to control OR, which is an important step toward in situ control of the physical properties of perovskite oxides.

36 MATERIALS SCIENCE↗

Currents to the ionosphere from thunderstorm generators - A model study

A computer model (Nisbet, 1983) was used to evaluate the role of thunderstorm clouds in generating the currents necessary for the maintenance of the ionospheric potential. The effects of variations in the breakdown electric field below the lower charge center, heights of the upper and lower charge centers, generator currents and geometry, as well as of the conductivity profile of the cloud, the surrounding air, and the ionosphere, on the currents to the ionosphere were examined. It was shown that the most important single variable controlling the ionospheric current/generator current ratio for both very active storms and for storms that do not produce lightning is the height of the lower active center. The ionospheric conductivity has a negligible effect on the total current to the ionosphere, although it is very important in controlling the electric field and current density waveforms above the cloud.

Nisbet, J. S.↗

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. Here we present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of polymer grain boundary passivation on organic–inorganic hybrid perovskite field-effect transistors

Despite successful applications of solution-processed organic–inorganic hybrid perovskites (OIHPs) such as archetypical methylammonium lead iodide (MAPI) in high-performance optoelectronic devices including solar cells and light emitting diodes, their application in field-effect transistors (FETs) remains relatively limited due to the unresolved issues caused by ion migration in OIHPs, such as screening of gate electric fields, lowered device on-off ratios and field-effect mobility, and large hysteresis in the FET transfer characteristics. Here, we report improved performances of the MAPI-based FET via a polymer-additive-based grain boundary (GB) passivation approach that suppresses the ion migration. Polycaprolactone (PCL) was incorporated into the MAPI FET as a GB-passivation additive as confirmed by scanning electron and atomic force microscopies. Unlike the typical n-type behavior and large transfer hysteresis in the starting, pristine MAPI FETs, the GB passivation by PCL led to a drastically reduced hysteresis in FET transfer characteristics, while hinting at an ambipolar transport and slight improvement in mobility, indicating a reduced ion migration in the PCL-incorporated MAPI FET. The effect of PCL GB passivation in suppressing ion migration was directly confirmed by the measured, increased activation energy for ion migration in the PCL-incorporated MAPI. Here, the results not only represent the first report of the polymer-additive-based mitigation of the ion migration in the MAPI FET but also suggest potential utilities of the approach for enabling high-performance OIHP FETs and electronic devices in general.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Bipolar Membranes With Controlled, Microscale 3D Junctions Enhance the Rates of Water Dissociation and Formation

A soft lithographic method is developed for making bipolar membranes (BPMs) with catalytic junctions formed from arrays of vertically oriented microscale cylinders. The membranes are cast from reusable polydimethylsiloxane (PDMS) molds made from silicon masters, which are fabricated on 2" to 4" wafer scales by nanosphere lithography. High-aspect-ratio junctions are made on a length scale similar to the thickness of optimized catalyst layers for water dissociation, creating a platform for probing the dual effects of catalysis and local electric field at the microscale BPM junction. Optimized polymer materials and nanoscale metal oxide catalysts are used in this study. 3D BPMs are tested under reverse and forward bias conditions, exhibiting superior performance relative to their 2D counterparts. Under forward bias in H 2- O 2 fuel cells, 3D BPMs achieve a current density of 1500 mA cm –2 , ≈7 times higher than 2D membranes made from the same materials.

25 ENERGY STORAGE↗

Effects of charged interfaces on electrolyte decomposition at the lithium metal anode

Lithium–Sulfur batteries are promising candidates to substitute conventional Li-ion batteries due to their higher energy density and reduced cost. However, several challenges related to the reactivity of the lithium metal anode have prevented this technology from becoming broadly commercialized. Lithium's high reactive nature leads to the continuous decomposition of the electrolyte and the formation of the solid-electrolyte interphase (SEI) layer. Thus, a comprehensive understanding of how the SEI film is formed is crucial to help elucidate improvements for this battery technology. In this work, we use density functional theory (DFT) based computational methods to investigate the effect of charged interfaces on the electrolyte degradation at the lithium anode. Here, several electrolyte mixtures were considered including 1,2-dimethoxyethane (DME) and 1,3-dioxolane (DOL) as solvents, and lithium bis(fluorosulfonyl)imide (LiFSI) and lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) as salts. It is found that the extent of salt decomposition is higher when the interface is charged. In addition, two types of solvent reduction mechanisms are identified: C–O bond cleavage and radical attacks. Charge transfer and evolution analysis are characterized in detail. Finally, solvent decomposition reactions are found to become more thermodynamically favorable and their activation barriers to be diminished under the effect of constant potentials and electric fields.

25 ENERGY STORAGE↗

Wafer-scale growth of two-dimensional, phase-pure InSe

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that are comparable to those of III–V semiconductors and van der Waals 2D transition-metal dichalcogenides. Nevertheless, there has been no demonstration of large-area synthesis of 2D InSe due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical vapor deposition (MOCVD) over 2-in wafers. We achieve polymorph-selective epitaxial growth of InSe on c-plane sapphire via flow modulation to control the Se/In ratio. The layer-by-layer growth allows thickness control with tunable optical properties comparable to those of bulk crystals. We also demonstrate gate-tunable electrical transport with a field-effect mobility comparable to that of single-crystalline flakes. Importantly, these results indicate that InSe grown by MOCVD could be an effective channel material for back-end-of-line integration in logic transistors.

2D materials↗

Influence of CO 2 -Regenerative Film Properties in Enhancing C 2+ Products Selectivity While Mitigating CO 2 Crossover

Zero-gap anion-exchange membrane electrode assembly (AEMEA) electrolyzers operating in alkaline media face challenges such as CO 2 crossover and salting-out. The bipolar membrane electrode assembly (BPMEA) electrolyzer, using DI water as the electrolyte, addresses both CO 2 crossover and salting-out issues. As cations, which are crucial in stabilizing the CO 2 R intermediates, are absent in the electrolyte, cations embedded in the AEM play an important role in dictating the CO 2 R selectivity and activity in BPMEA systems. So far, no systematic study has been conducted on the influence of cations embedded in AEMs on CO 2 selectivity and activity in BPMEA systems. Moreover, BPMEA systems impose an additional challenge: low stability due to delamination of the bipolar membrane caused by CO 2 regeneration at the membrane-membrane interface. To enhance the stability of the electrolyzer, a simple yet highly reproducible strategy for coating a porous CO 2 regenerative film on smooth Nafion 117 is demonstrated in this work, along with a systematic study of four different commercially available AEMs, composed of different cations and cation densities, for use in combination with Nafion 117 and copper catalyst at the cathode. We found that the PiperION membrane delivers selectivity and activity comparable to those of alkali-metal cations, owing to the enhanced local electric field resulting from the combined effects of a high positive charge on the N atom of the piperidinium cation and the high ion-exchange capacity. Further, we studied the influence of the thickness of the PiperION porous layer over Nafion 117 on CO 2 R selectivity and found that 70 μm is the minimum thickness to achieve maximum C 2+ products selectivity, reduced the CO 2 crossover to 5% from 25% at 4 SCCM and 150 mA cm –2 , and was stable for operation beyond 100 h. The selectivity of this system, compared with AEMEA, and stability outperformed both AEMEA and BPMEA. This study helps design more effective BPMs to inhibit CO 2 crossover while enabling stable and selective electrochemical CO 2 reduction to C 2+ hydrocarbons.

Cations↗

Imaging the electron charge density in monolayer MoS 2 at the Ångstrom scale

Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the projected electron charge density in monolayer MoS 2 . We evaluate the contributions of both the core electrons and the valence electrons to the derived electron charge density; however, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D-STEM and the need for smaller electron probes.

36 MATERIALS SCIENCE↗

Manipulating single excess electrons in monolayer transition metal dihalide

Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons in monolayer CoCl 2 , that are grown on HOPG substrate via molecular beam epitaxy. Two types of polarons are identified, both inducing upward local band bending, but exhibiting distinct appearances, lattice occupations and polaronic states. First principles calculations unveil origin of polarons that are stabilized by cooperative electron-electron and electron-phonon interactions. Both types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, as driven by tip electric field and inelastic electron tunneling effect. This finding identifies the rich category of polarons in CoCl 2 and their feasibility of precise control unprecedently, which can be generalized to other transition metal halides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗